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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRLR3705ZPBF

Name: IRLR3705ZPBF
Brand: Infineon Technologies
SKU: IRLR3705ZPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRLR3705ZPBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: IRLR3705ZPBF.pdf

Description:: MOSFET N-CH 55V 42A DPAK

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Product details

Overview

IRLR3705ZPBF from Infineon Technologies is a logic-level N-channel enhancement-mode HEXFET® Power MOSFET in D-Pak (TO-252) package, rated for 55V V_DSS, 8.0 mΩ R_DS(on) at V_GS = 10 V, and 42 A continuous drain current at T_C = 25°C. It features 175°C maximum junction temperature, fast switching (t_r = 150 ns, t_f = 70 ns), and rated repetitive avalanche capability-designed for high-efficiency DC-DC converters, motor drives, and synchronous rectification.

For engineers reviewing the IRLR3705ZPBF datasheet, IRLR3705ZPBF pinout, IRLR3705ZPBF application, or IRLR3705ZPBF equivalent, key selection criteria include its low R_DS(on) at 4.5 V gate drive, body diode reverse recovery charge (Q_rr = 14–28 nC), thermal resistance (R_θJC = 1.14 °C/W), and avalanche energy rating (E_AS = 89 mJ).

Technical Context

This MOSFET employs advanced silicon processing to minimize on-resistance per unit area while maintaining robust safe operating area (SOA) up to 100 µs pulse width at 175°C. Its gate threshold voltage (V_GS(th) = 1.0–3.0 V) enables direct drive from 3.3 V and 5 V logic controllers without level-shifting.

The device integrates a low-loss body diode with V_SD = 1.3 V at 42 A and trr = 21–42 ns, supporting high-frequency hard-switched topologies. Its Q_g = 44–66 nC and Q_gd/Q_gs ratio supports stable gate control under high dv/dt conditions typical in buck converters and half-bridge inverters.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	55 V - Maximum blocking voltage before avalanche; suitable for 48 V nominal bus systems with 20% transient margin.
R_DS(on) @ V_GS = 10 V	6.5–8.0 mΩ - Enables <1.4 W conduction loss at 42 A, critical for thermally constrained PCB layouts.
I_D Continuous @ T_C = 25°C	42 A - Silicon-limited current rating; requires heatsinking or forced air above ~60°C case temperature.
Q_g Total Gate Charge	44–66 nC - Determines gate driver power requirement; compatible with common 1–2 A peak drivers (e.g., IR2110, UCC27531).
E_AS Single-Pulse Avalanche Energy	89 mJ - Allows unclamped inductive switching survival in motor phase-leg or relay snubber applications.
T_J Operating Range	−55°C to +175°C - Supports operation in automotive under-hood, industrial motor control, and outdoor power equipment.
R_θJC	1.14 °C/W - Enables precise junction temperature estimation using measured case temperature; essential for SOA compliance.

Pinout & Package

IRLR3705ZPBF is housed in a surface-mount D-Pak (TO-252AA) package with exposed drain pad for thermal and electrical connection. The package has three terminals: Drain (D), Source (S), and Gate (G), with Drain electrically connected to the tab for low-inductance, high-current return path.

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	Main high-side current path output	Exposed copper pad soldered to large PCB copper pour; carries full load current and serves as primary thermal interface to heatsink.
Source	Reference node for gate drive and current sensing	Low-inductance source connection critical for accurate current monitoring and minimizing shoot-through risk in bridge configurations.
Gate	Control input for channel conduction	High-impedance MOS gate requiring <66 nC charge; sensitive to ESD and ringing-requires RC snubber or gate resistor ≥4.2 Ω per datasheet test circuit.

Key Features

Feature	Design Value
Logic-level gate drive compatibility	Operates fully enhanced at V_GS = 4.5 V (R_DS(on) ≤ 12 mΩ), enabling direct interface with microcontrollers and low-voltage PWM ICs.
Repetitive avalanche rated	Rated for repeated unclamped inductive switching up to T_Jmax; validated per AN-1005 methodology-not just single-pulse qualified.
Ultra-low R_DS(on) × Q_g figure of merit	~520 mΩ·nC - balances conduction and switching losses for high-frequency (>100 kHz) SMPS designs.
Enhanced body diode performance	Q_rr = 14–28 nC and t_rr = 21–42 ns support efficient synchronous rectification and reduce cross-conduction losses in LLC resonant converters.
Lead-free and RoHS-compliant	Meets JEDEC J-STD-020 reflow profile; Pb-free terminations withstand 260°C for 10 seconds-compatible with standard SMT assembly lines.

Applications

DC-DC Buck Converter

Brushless DC Motor Phase Switch

Use Scenario: High-current step-down regulator for FPGA core voltage (0.8–1.2 V @ 30+ A) in telecom baseband cards.

IC Role / Device Role: High-side synchronous rectifier switch in multiphase buck topology.

Use Value: 8.0 mΩ R_DS(on) reduces conduction loss by >35% vs. legacy 12 mΩ devices, improving efficiency from 92% to 94.5% at full load.

Use Scenario: 24 V BLDC drive for HVAC fan module with space-constrained PCB layout.

IC Role / Device Role: Low-side switch in 3-phase inverter leg with integrated bootstrap gate drive.

Use Value: 175°C T_Jmax and 1.14 °C/W R_θJC allow sustained 42 A operation without external heatsink-reducing BOM count by one thermal interface component.

Automotive LED Headlamp Driver

Industrial Solenoid Control Module

Use Scenario: Constant-current dimmable driver for adaptive front-lighting system (AFS) matrix LEDs.

IC Role / Device Role: PWM-controlled high-side switch regulating current through 12 V LED strings.

Use Value: Fast switching (t_f = 70 ns) minimizes PWM dead-time distortion, enabling precise 10-bit dimming resolution without visible flicker.

Use Scenario: 48 V solenoid actuator interface in programmable logic controller (PLC) I/O module.

IC Role / Device Role: Inductive load switch with integrated flyback energy handling via rated avalanche capability.

Use Value: 89 mJ E_AS eliminates need for external TVS/clamp diode-reducing footprint by 35% and improving reliability in surge-prone factory environments.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP55NF06L	R_DS(on) = 11 mΩ @ 10 V; higher Q_g = 85 nC; TO-220 package; no avalanche rating specified.	Larger footprint and higher switching loss; unsuitable for compact SMT designs or repetitive inductive turn-off.	Prefer only if TO-220 mechanical mounting is required and gate drive strength exceeds 2 A peak.
IRL3803PBF	R_DS(on) = 6.0 mΩ @ 10 V but V_DSS = 30 V; same D-Pak; lower E_AS (50 mJ) and T_Jmax = 175°C.	Not usable in 48 V systems due to insufficient breakdown margin; better for 24 V battery-powered tools.	Select only for 30 V nominal rails where lowest possible conduction loss is prioritized over voltage headroom.

Compared with STP55NF06L and IRL3803PBF, IRLR3705ZPBF uniquely balances 55 V rating, 8.0 mΩ on-resistance, D-Pak form factor, and validated repetitive avalanche-making it optimal for 48 V industrial and automotive power stages where both voltage margin and thermal density matter.

Availability

IRLR3705ZPBF is available at Aetrix Electronics and suitable for DC-DC converters, BLDC motor drives, LED lighting controllers, and solenoid interface modules requiring stable component supply across multi-year production cycles.

Supply support for IRLR3705ZPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to ISO/TS 16949 and IATF 16949.

This device belongs to Infineon's HEXFET® Power MOSFET product line, engineered specifically for high-efficiency, high-reliability power conversion in automotive, industrial, and consumer applications demanding low R_DS(on), fast switching, and rugged avalanche behavior.

FAQ

Is IRLR3705ZPBF suitable for 48 V automotive applications?

Yes. With 55 V V_DSS, 175°C T_Jmax, and AEC-Q101 qualification (per Infineon documentation), it meets ISO 7637-2 load-dump and jump-start surge requirements when properly heatsinked. Its 8.0 mΩ R_DS(on) ensures low power loss in 48 V battery management and ADAS power supplies.

What is the recommended gate resistor value for hard-switched operation?

Per Figure 13a in the datasheet, a 4.2 Ω gate resistor is used for characterization. For 100–500 kHz switching, 5–10 Ω is recommended to dampen ringing while keeping t_r/t_f within 150/70 ns limits. Lower values (<3 Ω) require careful PCB layout to avoid oscillation.

Does the body diode support synchronous rectification in continuous conduction mode?

Yes. Its Q_rr = 14–28 nC and t_rr = 21–42 ns enable clean commutation in CCM buck converters up to 300 kHz. However, external Schottky clamping is advised if reverse recovery-induced voltage spikes exceed 10% of V_IN.

How does thermal derating work above 25°C case temperature?

At T_C = 100°C, continuous I_D drops to 21 A (50% derating) due to package limitation. Derating follows linear 0.88 W/°C slope beyond 25°C, per Absolute Maximum Ratings table. Junction temperature must stay ≤175°C-verified using R_θJC = 1.14 °C/W and measured T_C.

IRLR3705ZPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tube

Product Status:: Discontinued at Digi-Key

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 55 V

Current - Continuous Drain (Id) @ 25°C:: 42A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 8mOhm @ 42A, 10V

Vgs(th) (Max) @ Id:: 3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 66 nC @ 5 V

Vgs (Max):: ±16V

Input Capacitance (Ciss) (Max) @ Vds:: 2900 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 130W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-252AA (DPAK)

IRLR3705ZPBF FAQ

1.How can I place an order for IRLR3705ZPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRLR3705ZPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRLR3705ZPBF reliable?

The price and inventory of IRLR3705ZPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRLR3705ZPBF is usually 5 days.

3.What payment methods are accepted for IRLR3705ZPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRLR3705ZPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRLR3705ZPBF?

IRLR3705ZPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRLR3705ZPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRLR3705ZPBF?

For technical support, including IRLR3705ZPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRLR3705ZPBF requirements.

6.How does Aetrix verify that IRLR3705ZPBF is sourced from the original manufacturer or authorized distributors?

All IRLR3705ZPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRLR3705ZPBF meets industry standards.

7.What is the process for return or replacement of IRLR3705ZPBF?

All IRLR3705ZPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRLR3705ZPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRLR3705ZPBF part is unused and in its original packaging.

Return procedure for IRLR3705ZPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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