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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRLR3705ZTRPBF

Name: IRLR3705ZTRPBF
Brand: Infineon Technologies
SKU: IRLR3705ZTRPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRLR3705ZTRPBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: IRLR3705ZTRPBF.pdf

Description:: MOSFET N-CH 55V 42A DPAK

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Product details

Overview

IRLR3705ZTRPBF from Infineon Technologies is a logic-level N-channel HEXFET® Power MOSFET with 55V V_DSS, 8.0mΩ R_DS(on) at V_GS = 10V, and 42A continuous drain current at T_C = 25°C. It features 175°C junction temperature rating, fast switching (t_d(on) = 17ns, t_f = 70ns), and rated repetitive avalanche capability-designed for high-efficiency DC-DC converters, motor drives, and power supply synchronous rectification.

For engineers reviewing the IRLR3705ZTRPBF datasheet, IRLR3705ZTRPBF pinout, IRLR3705ZTRPBF application, or IRLR3705ZTRPBF equivalent, key selection criteria include logic-level gate drive compatibility (V_GS(th) = 1.0–3.0V), low conduction loss at 42A, thermal robustness up to 175°C, and validated unclamped inductive switching performance.

Technical Context

This MOSFET employs advanced silicon processing to minimize R_DS(on) per die area while maintaining ruggedness. Its gate charge profile (Q_g = 44–66nC, Q_gd = 22nC) supports high-frequency PWM operation with controlled dv/dt and reduced Miller-induced shoot-through risk.

The integrated body diode exhibits V_SD = 1.3V at 42A and fast reverse recovery (t_rr = 21–42ns, Q_rr = 14–28nC), enabling reliable freewheeling in hard-switched topologies. Thermal design is supported by R_θJC = 1.14°C/W and validated transient impedance curves up to 100ms pulses.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	55V - Maximum blocking voltage before avalanche; enables use in 48V bus systems with margin.
R_DS(on)	6.5–8.0mΩ @ V_GS = 10V - Low conduction loss at full load; delivers ≤14W P_cond at 42A.
I_D (cont)	42A @ T_C = 25°C - Sustained current capability with PCB-mount thermal management.
Q_g	44–66nC - Gate drive energy requirement determines driver sizing and switching loss trade-off.
t_f	70ns - Fast fall time reduces overlap loss in bridge configurations; supports >200kHz operation.
T_J max	175°C - Enables high ambient or high-power-density designs without derating below industrial grade.
E_AS	89mJ (tested) - Confirmed single-pulse avalanche energy supports unclamped inductive turn-off reliability.

Pinout & Package

IRLR3705ZTRPBF is housed in a surface-mount D-Pak (TO-252AA) package with three terminals: Drain (tab), Source (pins 1 & 2), and Gate (pin 3). The exposed drain pad provides low-inductance, high-current path and primary thermal interface to PCB copper.

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	Main high-side current path	Electrically and thermally connected to PCB copper pour; requires solder mask opening for optimal thermal transfer.
Source (Pins 1 & 2)	Reference node for gate drive and current return	Parallel pins reduce source inductance (L_S = 7.5nH); critical for minimizing gate oscillation during fast switching.
Gate (Pin 3)	Control terminal for channel modulation	Logic-compatible input (V_GS(th) ≤ 3.0V); requires <10Ω series resistance to damp ringing from Q_gd-dominated Miller effect.

Key Features

Feature	Design Value
Ultra-low R_DS(on)	6.5mΩ typical at 10V gate drive - reduces conduction losses by >30% vs. legacy 55V MOSFETs in 42A applications.
Logic-level gate threshold	V_GS(th) = 1.0–3.0V - enables direct drive from 3.3V/5V microcontrollers without level-shifting circuitry.
Repetitive avalanche rated	Validated E_AR up to 120mJ at T_J = 125°C - allows safe operation under inductive fault conditions without derating.
Fast body diode	t_rr = 21ns, Q_rr = 14nC - minimizes reverse recovery loss and EMI in synchronous buck and half-bridge topologies.
Lead-free and RoHS compliant	Meets JEDEC J-STD-020 reflow profile - compatible with standard Pb-free assembly processes and 260°C peak temperature.

Applications

DC-DC Synchronous Rectifier

Brushless DC Motor Drive

Use Scenario: High-current output stage of isolated 48V-to-12V telecom DC-DC converter operating at 300kHz.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier replacing Schottky diode to reduce conduction loss and improve efficiency.

Use Value: Achieves >95% efficiency at 40A load due to 8.0mΩ R_DS(on) and fast t_f/t_r minimizing switching loss.

Use Scenario: Half-bridge leg in 3-phase BLDC controller for HVAC fan, driving 25A RMS phase current.

IC Role / Device Role / Timing Role: High-speed switching element in inverter leg with gate-driven body diode commutation.

Use Value: Enables 20kHz PWM with <1.5µs dead-time margin thanks to low Q_gd/Q_g ratio and stable V_GS(th).

Industrial Power Supply

Automotive Body Control Module

Use Scenario: Primary switch in 55V-input industrial SMPS delivering 30A at 5V/12V outputs.

IC Role / Device Role / Timing Role: Main power switch handling continuous 42A pulsed current with thermal cycling stress.

Use Value: Maintains stable R_DS(on) over -40°C to +125°C ambient via 175°C T_J rating and low tempco (0.053V/°C).

Use Scenario: Load switch for 12V battery-fed solenoid actuator in BCM, requiring hot-swap and short-circuit protection.

IC Role / Device Role / Timing Role: Protected high-side switch with integrated avalanche energy absorption during inductive turn-off.

Use Value: Survives >1000 cycles of 42A inductive interruption (E_AS = 89mJ) without parameter shift or failure.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP55NF06L	R_DS(on) = 14mΩ @ 10V; higher threshold (2.0–4.0V); TO-220 package	Lower current density; requires heatsink for 42A operation; slower switching (t_f = 100ns)	Prefer when mechanical mounting constraints favor through-hole or cost sensitivity outweighs efficiency gain.
IRFZ44NPBF	R_DS(on) = 28mΩ @ 10V; same D-Pak; V_GS(th) = 2.0–4.0V; no avalanche rating	Limited to ≤25A continuous; unsuitable for unclamped inductive loads or high-frequency PWM	Select only for low-cost, low-power (<15A), non-avalanche-critical applications where footprint compatibility is mandatory.

Compared with STP55NF06L and IRFZ44NPBF, IRLR3705ZTRPBF delivers superior power density (42A in D-Pak), lower gate drive demand, and verified avalanche robustness-making it the preferred choice for compact, high-reliability 55V switching applications.

Availability

IRLR3705ZTRPBF is available at Aetrix Electronics and suitable for DC-DC converters, motor drives, industrial power supplies, and automotive body control modules requiring stable component supply and long-term production continuity.

Supply support for IRLR3705ZTRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader specializing in power management, automotive electronics, and industrial control solutions, with core expertise in silicon and wide-bandgap device innovation.

This part belongs to Infineon's HEXFET® logic-level MOSFET product line, engineered for high-efficiency, high-reliability switching in space-constrained and thermally demanding applications such as server PSUs and EV auxiliary systems.

FAQ

What is the maximum continuous drain current at 100°C case temperature?

The IRLR3705ZTRPBF supports 36A continuous drain current at T_C = 100°C with V_GS = 10V, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits of the D-Pak package and ensures safe operation within R_θJC = 1.14°C/W and junction temperature not exceeding 175°C.

Does this MOSFET require a gate resistor for stability?

Yes-a 4.2Ω gate resistor is used in the official switching characterization (Fig. 18a), and design guidance recommends 5–10Ω to suppress oscillation caused by Q_gd coupling and PCB trace inductance. Omitting it risks gate ringing, false turn-on, and accelerated gate oxide stress.

Is the body diode suitable for reverse recovery in synchronous rectification?

Yes-the body diode is characterized for reverse recovery with t_rr = 21–42ns and Q_rr = 14–28nC at T_J = 25°C. Its soft recovery behavior and low Q_rr make it viable for synchronous rectification in buck converters up to 500kHz, provided layout minimizes source inductance.

Can IRLR3705ZTRPBF be used in parallel configurations?

Yes-its positive R_DS(on) temperature coefficient (normalized R_DS(on) rises with T_J) enables inherent current sharing. Successful parallel operation requires matched gate drive paths, symmetrical PCB layout, and thermal coupling to ensure uniform junction heating across devices.

IRLR3705ZTRPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 55 V

Current - Continuous Drain (Id) @ 25°C:: 42A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 8mOhm @ 42A, 10V

Vgs(th) (Max) @ Id:: 3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 66 nC @ 5 V

Vgs (Max):: ±16V

Input Capacitance (Ciss) (Max) @ Vds:: 2900 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 130W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-252AA (DPAK)

IRLR3705ZTRPBF FAQ

1.How can I place an order for IRLR3705ZTRPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRLR3705ZTRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRLR3705ZTRPBF reliable?

The price and inventory of IRLR3705ZTRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRLR3705ZTRPBF is usually 5 days.

3.What payment methods are accepted for IRLR3705ZTRPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRLR3705ZTRPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRLR3705ZTRPBF?

IRLR3705ZTRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRLR3705ZTRPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRLR3705ZTRPBF?

For technical support, including IRLR3705ZTRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRLR3705ZTRPBF requirements.

6.How does Aetrix verify that IRLR3705ZTRPBF is sourced from the original manufacturer or authorized distributors?

All IRLR3705ZTRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRLR3705ZTRPBF meets industry standards.

7.What is the process for return or replacement of IRLR3705ZTRPBF?

All IRLR3705ZTRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRLR3705ZTRPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRLR3705ZTRPBF part is unused and in its original packaging.

Return procedure for IRLR3705ZTRPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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