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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRLR3714

Name: IRLR3714
Brand: Infineon Technologies
SKU: IRLR3714
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRLR3714

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: IRLR3714.pdf

Description:: MOSFET N-CH 20V 36A DPAK

Quantity:: RFQ Add To RFQ list

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Inventory:9,077

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Product details

Overview

IRLR3714 from Infineon Technologies is a 20 V, 36 A N-channel enhancement-mode HEXFET® Power MOSFET in D-Pak (TO-252AA) package, optimized for high-frequency synchronous rectification in isolated DC-DC converters and buck regulators. It delivers 20 mΩ R_DS(on) at V_GS = 4.5 V, supports 140 A pulsed drain current, and features ultra-low gate charge (Q_g = 9.7 nC) for fast switching in telecom and processor power applications.

For engineers reviewing the IRLR3714 datasheet, IRLR3714 pinout, IRLR3714 application, or IRLR3714 equivalent, key selection criteria include its 4.5 V logic-level gate drive compatibility, 72 mJ single-pulse avalanche energy rating, body diode reverse recovery performance (t_rr = 35–53 ns), and thermal resistance (R_θJC = 3.2 °C/W) for high-power-density board layouts.

Technical Context

The IRLR3714 employs planar silicon HEXFET® technology with fully characterized avalanche capability and integrated body diode optimized for synchronous rectification. Its gate threshold voltage (V_GS(th) = 1.0–3.0 V) enables reliable turn-on with low-voltage controllers, while dynamic parameters-including Q_gd = 2.9 nC and C_rss = 68 pF-support stable operation under high dv/dt conditions in hard-switched topologies.

Thermal design is enabled by its low R_θJC of 3.2 °C/W and linear derating factor of 0.31 W/°C above 25°C case temperature. The device sustains continuous drain current up to 31 A at T_C = 70°C and operates across –55°C to +175°C junction range, making it suitable for thermally constrained industrial and telecom environments.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	20 V - Maximum blocking voltage compatible with 12 V input rails and low-voltage synchronous rectifier designs.
R_DS(on) @ V_GS = 4.5 V	21 mΩ max - Enables low conduction loss in 5 V–4.5 V gate-driven buck and flyback secondary-side applications.
I_D @ T_C = 25°C	36 A - Supports high-current output stages in server VRMs and telecom DC-DC modules without forced air cooling.
Q_g	9.7 nC max - Reduces gate drive power and switching transition time, critical for >500 kHz operation in compact converters.
t_rr	35–53 ns - Minimizes reverse recovery losses and EMI in synchronous rectifiers operating with fast di/dt.
E_AS	72 mJ - Withstands unclamped inductive switching events in hard-switched topologies without failure.
R_θJC	3.2 °C/W - Allows direct heatsinking via PCB copper pour or external heatsink for sustained 30+ W dissipation.

Pinout & Package

D-Pak (TO-252AA) surface-mount package with exposed drain pad for thermal and electrical performance. Three main terminals plus drain-connected tab (Pin 4).

Pin/Terminal	Circuit Role	Design Meaning
1	Gate	Control terminal requiring <200 nA leakage at ±16 V; low input capacitance (C_iss = 670 pF) eases driver selection.
2 & 4	Drain	High-current output node tied to internal die backside; electrically and thermally connected to exposed metal tab for low-inductance, low-R_th path.
3	Source	Reference node for gate drive and current sensing; body diode anode connection enabling synchronous rectifier freewheeling path.

Key Features

Feature	Design Value
Logic-level gate drive	Operates fully enhanced at V_GS = 4.5 V, eliminating need for level-shifters in 5 V or 3.3 V controller systems.
Ultra-low Q_gd/Q_g ratio	Q_gd = 2.9 nC / Q_g = 9.7 nC → 30% - Improves Miller immunity and reduces risk of spurious turn-on in high-side configurations.
Characterized body diode	V_SD = 1.3 V @ 18 A, t_rr = 35 ns - Enables predictable synchronous rectifier timing and minimizes shoot-through risk during dead-time control.
Avalanche-rated	E_AS = 72 mJ @ I_AR = 14 A - Permits robust operation in non-isolated buck or boost converters where inductive energy must be safely clamped.

Applications

Telecom DC-DC Converters

Server Processor VRMs

Use Scenario: 48 V–12 V intermediate bus converter with synchronous rectification in 1U telecom power supply.

IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier replacing Schottky diode to reduce conduction loss and improve efficiency at 200–500 kHz switching frequency.

Use Value: Achieves >95% efficiency at full load due to 21 mΩ R_DS(on) at 4.5 V drive and low Q_g-driven switching loss.

Use Scenario: Multiphase buck converter delivering 100+ A to CPU/GPU with tight voltage regulation and thermal constraints.

IC Role / Device Role / Timing Role: High-current, low-R_DS(on) power stage switch operating in continuous conduction mode with 300–1000 kHz PWM.

Use Value: Sustains 31 A continuous current at 70°C case temperature while maintaining <1.5 W conduction loss per phase.

Industrial Motor Drives

LED Driver Power Stages

Use Scenario: Low-voltage (<24 V) BLDC gate driver half-bridge with integrated current sensing and fault protection.

IC Role / Device Role / Timing Role: Low-side switch in three-phase inverter leg, handling PWM-modulated motor current with fast turn-off (t_f = 4.5 ns).

Use Value: Enables precise current control via low R_DS(on) tolerance and stable V_GS(th) over temperature (0.022 V/°C coefficient).

Use Scenario: Constant-current LED driver for architectural lighting with 12–24 V input and 3–10 A output.

IC Role / Device Role / Timing Role: Primary-side switch in buck or buck-boost topology regulating LED string current with analog/PWM dimming.

Use Value: Delivers <0.5% current ripple using low C_oss (470 pF) and controlled dv/dt (via Q_gd = 2.9 nC) to minimize EMI in sensitive lighting environments.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRLR3110Z	R_DS(on) = 12 mΩ @ 4.5 V, V_DS = 100 V, Q_g = 12.5 nC	Higher voltage rating suits 48 V input systems but higher R_DS(on) increases conduction loss at 20 V rail.	Select when system requires >20 V blocking margin or legacy 100 V design reuse.
SI2302DS	R_DS(on) = 35 mΩ @ 4.5 V, V_DS = 20 V, SOT-23 package, I_D = 2.6 A	Lower current rating and thermal resistance limit use to <5 W applications; not drop-in for D-Pak footprint.	Choose only for space-constrained, low-power auxiliary rails where D-Pak mounting is impractical.

Compared with IRLR3714, the IRLR3110Z offers higher voltage headroom at the cost of increased conduction loss in 20 V systems, while the SI2302DS sacrifices current capacity and thermal performance for ultra-small form factor-neither matches the IRLR3714's balance of 36 A current, 20 mΩ on-resistance, and D-Pak thermal management.

Availability

IRLR3714 is available at Aetrix Electronics and suitable for telecom DC-DC converters, server VRMs, and industrial motor drives requiring stable component supply and long-term production continuity.

Supply support for IRLR3714 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader specializing in power management, automotive, and industrial control solutions, with core expertise in silicon and wide-bandgap power devices.

The HEXFET® Power MOSFET product line targets high-efficiency, high-reliability power conversion systems-designed specifically for synchronous rectification, DC-DC regulation, and motor control where low R_DS(on), fast switching, and rugged avalanche performance are essential.

FAQ

What is the maximum continuous drain current at 100°C case temperature?

The IRLR3714 datasheet specifies continuous drain current derating beyond 70°C. At T_C = 100°C, the linear derating factor of 0.31 W/°C reduces maximum power dissipation to 26.7 W. Using R_DS(on) = 20 mΩ, the corresponding I_D is approximately 36.6 A (since P = I²R). However, thermal limits constrain actual usable current to ~24 A to maintain safe junction temperature below 175°C.

Can IRLR3714 be used in parallel configurations?

Yes-the IRLR3714 exhibits positive temperature coefficient for R_DS(on), ensuring inherent current sharing when paralleled. Its matched transfer characteristics (Fig. 3) and low gate threshold variation (1.0–3.0 V) further support stable multi-device operation. Use individual gate resistors (≥1 Ω) and symmetrical PCB layout to minimize oscillation and circulating currents.

Does the body diode support continuous reverse conduction?

The integrated body diode is rated for continuous source current (I_S) of 36 A at T_C = 25°C and 31 A at T_C = 70°C, matching the MOSFET's forward current ratings. Its reverse recovery charge (Q_rr = 34–53 nC) and soft recovery behavior (t_rr = 35–53 ns) are characterized for synchronous rectifier use, but continuous reverse conduction is not recommended beyond specified I_S limits.

Is the D-Pak package RoHS-compliant and lead-free?

Yes-the IRLR3714 D-Pak package is RoHS-compliant and lead-free per Infineon's standard qualification. The device meets JEDEC J-STD-020 moisture sensitivity level (MSL) 1 and is qualified for reflow soldering up to 260°C peak temperature. Marking "IRLR3714" and date code follow JEDEC standards for traceability.

IRLR3714 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 20 V

Current - Continuous Drain (Id) @ 25°C:: 36A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 20mOhm @ 18A, 10V

Vgs(th) (Max) @ Id:: 3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 9.7 nC @ 4.5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 670 pF @ 10 V

FET Feature:: -

Power Dissipation (Max):: 47W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-252AA (DPAK)

IRLR3714 FAQ

1.How can I place an order for IRLR3714 through Aetrix?

Please submit a Request for Quotation (RFQ) for IRLR3714 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRLR3714 reliable?

The price and inventory of IRLR3714 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRLR3714 is usually 5 days.

3.What payment methods are accepted for IRLR3714?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRLR3714 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRLR3714?

IRLR3714 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRLR3714 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRLR3714?

For technical support, including IRLR3714 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRLR3714 requirements.

6.How does Aetrix verify that IRLR3714 is sourced from the original manufacturer or authorized distributors?

All IRLR3714 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRLR3714 meets industry standards.

7.What is the process for return or replacement of IRLR3714?

All IRLR3714 units undergo pre-shipment inspection (PSI). If there is an issue with IRLR3714, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRLR3714 part is unused and in its original packaging.

Return procedure for IRLR3714:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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