Infineon Technologies IRLR3714PBF

Overview

IRLR3714PBF from Infineon Technologies (formerly International Rectifier) is a 20 V, 36 A N-channel enhancement-mode Power MOSFET in D-Pak package, optimized for high-frequency synchronous rectification in isolated DC-DC converters and buck regulators. It delivers 20 mΩ R_DS(on) at V_GS = 4.5 V, supports 140 A pulsed drain current, and features fully characterized avalanche capability (72 mJ E_AS) for robust operation in telecom and industrial power supplies.

For engineers reviewing the IRLR3714PBF datasheet, IRLR3714PBF pinout, IRLR3714PBF application, or IRLR3714PBF equivalent, key selection criteria include low gate charge (9.7 nC max), fast switching (t_r = 78 ns, t_f = 4.5 ns), body diode reverse recovery performance (Q_rr = 51 nC), and thermal resistance (R_θJC = 3.2 °C/W) for high-density SMPS designs.

Technical Context

This HEXFET device uses planar vertical DMOS technology with optimized gate oxide and cell pitch to achieve ultra-low R_DS(on) at logic-level gate drive (4.5 V). Its low Q_gd/Q_gs ratio (2.9/1.8 nC) enables stable high-speed switching with reduced Miller effect, critical for >500 kHz synchronous rectifiers.

The integrated body diode exhibits tightly specified reverse recovery parameters (t_rr = 53 ns max, Q_rr = 53 nC max at T_J = 125°C), enabling efficient zero-voltage switching (ZVS) transitions and minimizing cross-conduction losses in half-bridge and LLC topologies.

Key Specifications

Pinout & Package

D-Pak (TO-252AA) surface-mount package with exposed drain pad for thermal and electrical connection. Standard 3-pin configuration: Gate (G), Drain (D), Source (S).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level power MOSFET applications.

Compared with IRLR3714PBF, the IRLR3715PBF offers tighter threshold control but sacrifices 11 % conduction efficiency at 14 A; the SI2302DS-T1-GE3 provides SOT-23 convenience but cannot support the 36 A continuous load or 33 W dissipation required in primary SMPS stages.

Availability

IRLR3714PBF is available at Aetrix Electronics and suitable for telecom DC-DC converters, server VRMs, and industrial PLC power supplies requiring stable component supply and long-term manufacturability.

Supply support for IRLR3714PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies acquired International Rectifier in 2015 and continues its legacy of high-performance power semiconductors for industrial, automotive, and computing markets.

The HEXFET® product line was developed specifically for high-efficiency, high-frequency switched-mode power supplies, emphasizing low gate charge, rugged avalanche performance, and logic-level drivability in compact packages.

FAQ

Is IRLR3714PBF suitable for 3.3 V gate drive?

Yes. With V_GS(th) as low as 1.0 V and R_DS(on) = 20 mΩ at V_GS = 4.5 V, it achieves full enhancement using standard 3.3 V microcontroller outputs when paired with appropriate gate resistor sizing (≤10 Ω) to manage dV/dt and ringing. At 3.3 V, R_DS(on) rises to ~36 mΩ, still usable for moderate-current applications.

What is the maximum recommended PCB copper area for the drain pad?

Per IRF PD-95554A design guidelines, the exposed drain pad should connect to ≥200 mm² of 2 oz copper on the primary layer, thermally stitched to internal ground planes via ≥6 vias (0.3 mm diameter). This maintains R_θJC near 3.2 °C/W and prevents localized hot spots above 70 °C case temperature at 31 A continuous current.

Does IRLR3714PBF have built-in ESD protection?

No. The device has HBM ESD rating of 2 kV (per JESD22-A114), which is typical for discrete MOSFETs but insufficient for direct handling without precautions. System-level ESD protection (e.g., TVS diode on gate line) is recommended in automated assembly or field-replaceable modules where human contact or cable discharge events may occur.

Can IRLR3714PBF replace IRLU3714PBF in a design?

Yes, with mechanical consideration. Both share identical electrical specs and D-Pak (IRLR) vs. I-Pak (IRLU) package footprints differ only in leadframe thickness and thermal pad geometry. IRLR3714PBF's D-Pak offers lower R_θJC (3.2 vs. 3.5 °C/W) and is preferred for thermally constrained layouts; reflow profile and solder mask openings must be verified per respective package drawings.