Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRLR3714ZPBF

Name: IRLR3714ZPBF
Brand: Infineon Technologies
SKU: IRLR3714ZPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: IRLR3714ZPBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: IRLR3714ZPBF.pdf

Description:: MOSFET N-CH 20V 37A DPAK

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:8,205

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

IRLR3714ZPBF from Infineon Technologies is a 20V, 37A N-channel enhancement-mode HEXFET Power MOSFET in D-Pak (TO-252) package, featuring 12 mΩ R_DS(on) at V_GS = 4.5V, 4.7 nC total gate charge, and fully characterized unclamped inductive avalanche capability. It serves as a high-efficiency synchronous rectifier or control FET in high-frequency DC-DC converters for CPU core power delivery.

For engineers reviewing the IRLR3714ZPBF datasheet, IRLR3714ZPBF pinout, IRLR3714ZPBF application, or IRLR3714ZPBF equivalent, key selection criteria include low-voltage gate drive compatibility (4.5V logic-level), thermal performance under pulsed load (144A IDM), body diode recovery (Q_rr = 8.5–13 nC), and SOA-limited operation up to 175°C junction temperature.

Technical Context

This MOSFET employs planar silicon HEXFET architecture optimized for low R_DS(on) at 4.5V gate drive, enabling direct interface with 3.3V/5V PWM controllers without level-shifting. Its ultra-low gate impedance and Q_gd/Q_gs1 ratio of ~1.0 minimize C_dv/dt turn-on risk in synchronous buck topologies.

The device integrates a robust intrinsic body diode with t_rr = 21–32 ns and V_SD ≤ 1.0 V at 12A, supporting fast reverse recovery in hard-switched and resonant converter stages. Avalanche energy rating (E_AS = 100 mJ at T_J = 25°C) enables reliable operation under transient overcurrent conditions without external snubbers.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	20 V - Maximum blocking voltage compatible with 12V input rails and 5V logic-level gate drivers.
R_DS(on) max @ 4.5V	15 mΩ - Enables <1.8 W conduction loss at 12A DC, critical for >90% efficiency in 1–3 MHz buck converters.
Q_g	4.7 nC - Low gate charge reduces driver power loss and allows use of low-current gate drivers (e.g., integrated controller outputs).
I_D @ T_C = 25°C	37 A - Continuous current rating at heatsink-mounted condition, defining PCB copper area and thermal pad design.
t_r/t_f	7.6 ns / 4.3 ns - Fast switching transitions minimize overlap loss in synchronous rectification mode.
Q_rr	8.5–13 nC - Quantifies reverse recovery charge injected during body diode commutation, directly impacting shoot-through margin and EMI.
R_θJC	4.28 °C/W - Junction-to-case thermal resistance enables accurate heatsink sizing when mounted on 1 oz. copper with thermal vias.

Pinout & Package

IRLR3714ZPBF uses the D-Pak (TO-252) surface-mount package with exposed drain pad for thermal and electrical connection. The package measures 6.73 mm × 6.22 mm × 2.39 mm and requires solder paste stencil aperture matching IPC-7351B standard.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (G)	Gate	Control terminal; accepts 0–20 V drive; low input capacitance (C_iss = 560 pF) minimizes Miller effect.
Pin 2 (S)	Source	Reference node for gate drive and current sensing; tied to power ground in low-side switch configuration.
Pin 3 (D)	Drain	High-current output terminal; electrically and thermally connected to exposed copper pad on bottom of package.

Key Features

Feature	Design Value
Logic-level gate drive	Specified R_DS(on) ≤ 15 mΩ at V_GS = 4.5V - eliminates need for gate driver ICs in space-constrained point-of-load designs.
Fully characterized avalanche	E_AS = 100 mJ (T_J = 25°C), I_AR = 31 A - supports robust operation during load dump or short-circuit transients without derating.
Low Q_gd/Q_gs1 ratio	Q_gd = 1.7 nC, Qgs1 = 1.7 nC - suppresses parasitic turn-on in high-dV/dt synchronous rectifier applications.
Optimized body diode	Q_rr = 8.5–13 nC, t_rr = 21–32 ns - reduces cross-conduction losses and EMI in phase-shifted full-bridge and LLC converters.

Applications

Server CPU VRM

Telecom DC-DC Module

Use Scenario: High-current, multi-phase buck converter supplying 0.8–1.5 V at up to 200 A to modern x86 processors.

IC Role / Device Role / Timing Role: Synchronous rectifier FET operating at 300–1000 kHz with 50–70% duty cycle; body diode conducts during dead time.

Use Value: 12 mΩ R_DS(on) at 4.5V enables <1.5 W per phase conduction loss; low Q_g ensures minimal gate drive overhead from integrated controller.

Use Scenario: Isolated 48 V–12 V DC-DC converter using active clamp forward or half-bridge topology in telecom shelf power supplies.

IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier with clamped inductive switching; operates at 200–500 kHz with zero-voltage switching assist.

Use Value: Fast t_r/t_f (7.6/4.3 ns) and low Q_oss (2.6 nC) reduce switching loss; avalanche rating handles reflected transients from primary-side MOSFET turn-off.

Industrial PLC I/O Module

Automotive ADAS Power Supply

Use Scenario: Compact 24 V–5 V/3.3 V non-isolated buck regulator powering FPGA, ADCs, and communication interfaces in programmable logic controllers.

IC Role / Device Role / Timing Role: Primary control FET in fixed-frequency (500 kHz) buck stage; gate driven by dedicated PWM IC with 5 V output.

Use Value: R_DS(on) stability over temperature (±15% from −40°C to +125°C) ensures consistent efficiency across industrial ambient range.

Use Scenario: 12 V–3.3 V point-of-load supply for radar sensor SoCs and camera image signal processors in automotive ADAS ECUs.

IC Role / Device Role / Timing Role: Synchronous rectifier in dual-phase buck converter meeting AEC-Q101 stress requirements and ISO 7637-2 pulse immunity.

Use Value: Qualified to 175°C T_J and specified Q_rr enable reliable operation under engine-bay thermal cycling and load-dump transients.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRLR3715ZPBF	R_DS(on) = 10 mΩ @ 4.5V (lower), Q_g = 6.5 nC (higher), same D-Pak package	Better conduction loss but higher gate drive loss; less suitable for high-frequency (>1 MHz) operation	Select when thermal budget allows larger gate driver or when conduction loss dominates system efficiency.
SI2302DS-T1-GE3	R_DS(on) = 35 mΩ @ 4.5V (higher), Q_g = 3.5 nC (lower), SOT-23 package, 2.8 A I_D	Lower current rating and higher R_DS(on); suited only for sub-5A loads	Use only in ultra-compact, low-power auxiliary rails where board space outweighs efficiency trade-offs.

Compared with IRLR3714ZPBF, the IRLR3715ZPBF offers lower conduction loss but increases gate drive burden and switching loss due to higher Q_g, while the SI2302DS-T1-GE3 sacrifices current capacity and on-resistance for extreme miniaturization-neither matches the balanced 37A/15mΩ/4.7nC profile required for high-density server VRMs.

Availability

IRLR3714ZPBF is available at Aetrix Electronics and suitable for server CPU VRMs, telecom DC-DC modules, and industrial PLC I/O power supplies requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for IRLR3714ZPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to ISO 9001 and IATF 16949.

This device belongs to Infineon's HEXFET Power MOSFET product line, engineered specifically for high-efficiency, high-frequency DC-DC conversion in computing, telecom, and industrial power systems where logic-level drive and avalanche ruggedness are mandatory.

FAQ

Is IRLR3714ZPBF RoHS-compliant and lead-free?

Yes. IRLR3714ZPBF is manufactured with lead-free terminations and complies with EU RoHS Directive 2011/65/EU and JEDEC J-STD-020 moisture sensitivity level 1 (MSL1). The "PbF" suffix explicitly denotes lead-free packaging, and the device passes all required Pb-free reflow profiles up to 260°C peak temperature.

What is the maximum safe operating frequency for IRLR3714ZPBF in a synchronous buck converter?

Based on its 7.6 ns rise time, 4.3 ns fall time, and 4.7 nC gate charge, IRLR3714ZPBF is rated for reliable operation up to 1.5 MHz in well-designed layouts with minimized parasitic inductance. Efficiency measurements in reference designs confirm >89% efficiency at 1 MHz with 12V input and 1.2V/30A output, provided gate drive strength exceeds 2 A peak.

Does IRLR3714ZPBF require a gate resistor for stability in high-speed switching?

A small gate resistor (2–10 Ω) is recommended to dampen ringing caused by PCB trace inductance interacting with C_iss (560 pF) and C_rss (95 pF). Without it, overshoot exceeding ±20 V on the gate can occur during fast dV/dt events, risking gate oxide damage. Layout best practices include minimizing gate loop area and placing the resistor adjacent to the gate pin.

Can IRLR3714ZPBF be used in parallel configurations for higher current handling?

Yes, but with strict layout constraints: matched gate trace lengths, individual gate resistors (≤5 Ω), Kelvin source connections, and symmetrical thermal mounting. The positive R_DS(on) temperature coefficient (14 mV/°C) provides inherent current sharing above 80°C, but below that, mismatched threshold voltages (V_GS(th) = 1.65–2.55 V) require careful binning or active current balancing.

IRLR3714ZPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 20 V

Current - Continuous Drain (Id) @ 25°C:: 37A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 15mOhm @ 15A, 10V

Vgs(th) (Max) @ Id:: 2.55V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 7.1 nC @ 4.5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 560 pF @ 10 V

FET Feature:: -

Power Dissipation (Max):: 35W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-252AA (DPAK)

IRLR3714ZPBF FAQ

1.How can I place an order for IRLR3714ZPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRLR3714ZPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRLR3714ZPBF reliable?

The price and inventory of IRLR3714ZPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRLR3714ZPBF is usually 5 days.

3.What payment methods are accepted for IRLR3714ZPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRLR3714ZPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRLR3714ZPBF?

IRLR3714ZPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRLR3714ZPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRLR3714ZPBF?

For technical support, including IRLR3714ZPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRLR3714ZPBF requirements.

6.How does Aetrix verify that IRLR3714ZPBF is sourced from the original manufacturer or authorized distributors?

All IRLR3714ZPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRLR3714ZPBF meets industry standards.

7.What is the process for return or replacement of IRLR3714ZPBF?

All IRLR3714ZPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRLR3714ZPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRLR3714ZPBF part is unused and in its original packaging.

Return procedure for IRLR3714ZPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-07-29 18650 Battery: Voltage, Capacity, Charging and Pack Design

18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…

2026-07-27 Hall Effect Sensor: Working Principle, Types, Circuits and Applications

Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…

2026-07-20 Product Change Notification (PCN) in Electronic Components: Meaning and Supply Chain Response

Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…

2026-07-19 Blend Door Actuator: Symptoms, Location, Reset and Replacement Guide

A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…

2026-07-17 Raspberry Pi Alternatives: Chip-Level Comparison, Compatibility and Replacement Guide

Engineering guide to Raspberry Pi alternatives, covering chip-level differences, Orange Pi, ROCK, Jetson, Banana Pi, NanoPi, Compute Module, Pico, GPIO, camera, HAT compatibility, and replacement risks…

2026-07-13 How to Test Dynamic Load Response in Low-Voltage High-Current Buck Converters

Engineering guide to dynamic load response testing for high-current buck converters, covering load step setup, slew rate, Vcore undershoot, overshoot, recovery time, probe location, output capacitors a…

2026-07-08 Output Capacitor Selection for High-Current ASIC Vcore Rails

Engineering guide to output capacitor selection for ASIC Vcore rails, covering bulk capacitors, polymer capacitors, MLCC decoupling, DC bias, ESR, ESL, placement, transient response and substitution ri…

2026-07-07 High-Current ASIC Core Power Supply Design: 12-Phase Buck, PMBus and Dynamic Load Response

Engineering guide to high-current ASIC Vcore rails, covering 12-phase buck architecture, PMBus control, dynamic load testing, output capacitor networks, smart power stage selection, thermal design and …

2026-07-06 Voltage Regulator: Types, Circuits, Testing and Selection Guide

Voltage regulator guide covering linear, LDO, 7805, Zener, adjustable, buck, VRM and alternator regulators, with design checks, testing methods, troubleshooting and datasheet-based selection.

2026-06-30 Amplifiers Explained: Types, Circuits, Gain, Classes and Applications

Amplifier guide covering voltage, current and power amplification, gain, feedback, amplifier classes, audio and RF applications, op-amp circuits, transimpedance amplifiers, datasheet selection and trou…