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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRLR3715Z

Name: IRLR3715Z
Brand: Infineon Technologies
SKU: IRLR3715Z
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRLR3715Z

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: IRLR3715Z.pdf

Description:: MOSFET N-CH 20V 49A DPAK

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRLR3715Z from Infineon Technologies is a 20V N-channel enhancement-mode HEXFET Power MOSFET in D-Pak package, optimized for high-frequency synchronous buck converters and isolated DC-DC converters. It delivers R_DS(on) = 8.8 mΩ (typ) at V_GS = 10 V, Q_g = 7.2 nC (typ), and supports continuous drain current up to 49 A at T_C = 25°C - enabling efficient low-voltage, high-current CPU core power delivery in server and telecom applications.

For engineers reviewing the IRLR3715Z datasheet, IRLR3715Z pinout, IRLR3715Z application, or IRLR3715Z equivalent, key selection criteria include its ultra-low gate impedance, fully characterized avalanche capability (E_AS = 40 mJ), and guaranteed R_DS(on) performance down to 4.5 V gate drive - critical for 5 V and 3.3 V logic-level control in modern point-of-load regulators.

Technical Context

This MOSFET employs planar silicon process technology with optimized cell pitch and trench-assisted charge balancing to achieve simultaneous low R_DS(on) and low gate charge. Its body diode exhibits t_rr = 11–17 ns and Q_rr = 3.5–5.3 nC under specified conditions, supporting fast synchronous rectification without excessive shoot-through risk.

The device is rated for V_DS = 20 V and features a gate threshold voltage V_GS(th) = 1.65–2.55 V with negative temperature coefficient (−4.8 mV/°C), ensuring stable turn-on behavior across −55°C to +175°C junction range. Thermal resistance R_θJC = 3.75°C/W enables direct heatsink mounting for high-power density designs.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	20 V - Supports input rails up to 16 V DC with margin for transient spikes in 12 V systems
R_DS(on) max @ V_GS = 10 V	11 mΩ - Enables ≤2.5 W conduction loss at 15 A DC, critical for thermal management in compact PCB layouts
Q_g	7.2 nC (typ) - Reduces gate driver power demand and switching transition time in >500 kHz converters
I_D @ T_C = 25°C	49 A - Sustains full load current in single-phase VRM stages without forced airflow
E_AS	40 mJ - Withstands unclamped inductive energy during startup/fault without failure in synchronous buck topologies
t_rr	11–17 ns - Limits reverse recovery losses and cross-conduction risk when paired with control FETs
R_θJC	3.75°C/W - Allows direct thermal interface to heatsink for <10°C junction rise at 30 W dissipation

Pinout & Package

D-Pak (TO-252AA) package: surface-mount, single-sided heat transfer via exposed drain pad; compatible with standard reflow profiles and automated assembly.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Source)	Source terminal (body diode anode)	Connected to power ground plane; carries full load current and reverse recovery current during synchronous operation
Pin 2 (Gate)	Control electrode	Low-impedance input requiring <10 Ω series resistance to damp ringing; sensitive to C_dv/dt coupling from switching node
Pin 3 (Drain)	Power output terminal (body diode cathode)	Connected to switching node; must be routed with minimal loop area to reduce EMI and voltage overshoot during turn-off

Key Features

Feature	Design Value
Ultra-low R_DS(on) at 4.5 V V_GS	Enables direct drive from 5 V microcontrollers or PWM controllers without level-shifting, reducing BOM count
Fully characterized avalanche rating	Guarantees robustness against inductive switching stress in non-isolated topologies without external snubbers
Low Q_gd/Q_gs1 ratio	Minimizes C_dv/dt-induced false turn-on in synchronous rectifier position, lowering shoot-through risk
Optimized body diode recovery	Reduces Q_rr-related losses transferred to control FET and improves light-load efficiency

Applications

Server CPU Core VRM

Telecom DC-DC Brick

Use Scenario: High-current, multi-phase buck converter supplying 0.8–1.2 V to x86 or ARM processors in rack-mounted servers.

IC Role / Device Role / Timing Role: Synchronous rectifier FET operating at 300–600 kHz with 10–30 A per phase.

Use Value: 8.8 mΩ R_DS(on) minimizes conduction loss at 12 A RMS, while 7.2 nC Q_g ensures fast, low-loss transitions under dynamic load steps.

Use Scenario: Secondary-side synchronous rectifier in 48 V input, 12 V output isolated forward converter for telecom base station power supplies.

IC Role / Device Role / Timing Role: Low-side switch clamped by transformer secondary winding; conducts during duty cycle when primary is off.

Use Value: 40 mJ E_AS withstands leakage inductance spikes; 11 ns t_rr prevents overlap conduction with primary-side MOSFET.

Industrial PLC I/O Module

Automotive ADAS Camera Power

Use Scenario: Compact 5 V/3.3 V point-of-load regulator powering FPGA configuration memory and interface logic in programmable logic controllers.

IC Role / Device Role / Timing Role: High-side or low-side switch in discrete buck stage; driven by integrated controller with 5 V gate output.

Use Value: Guaranteed R_DS(on) ≤11 mΩ at 4.5 V V_GS ensures stable regulation under wide temperature range (−40°C to +105°C ambient).

Use Scenario: 12 V to 3.3 V intermediate bus converter powering image sensor and ISP in automotive surround-view camera modules.

IC Role / Device Role / Timing Role: Synchronous rectifier in fixed-frequency 500 kHz buck stage; subjected to automotive temperature cycling and vibration.

Use Value: R_θJC = 3.75°C/W allows direct copper pour thermal path on 2-layer PCB; TJ rating up to +175°C meets AEC-Q101 stress requirements.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRLR3714Z	R_DS(on) = 13 mΩ (max) at 10 V; Q_g = 6.2 nC - slightly higher on-resistance but lower gate charge	Better suited for ultra-high-frequency (>1 MHz) designs where gate drive loss dominates over conduction loss	Select when prioritizing switching speed over peak current handling at elevated temperatures
SI2307DS	R_DS(on) = 28 mΩ (max) at 4.5 V; SOT-23 package - smaller footprint but higher R_DS(on) and lower current rating (4.9 A)	Targeted at space-constrained, low-power (<5 W) applications such as USB-C PD sink circuits	Choose only for sub-5 A loads where board area is more critical than efficiency or thermal margin

Compared with IRLR3715Z, IRLR3714Z trades 2.2 mΩ higher R_DS(on) for 1 nC lower Q_g, favoring high-frequency light-load efficiency; SI2307DS sacrifices 150% higher on-resistance and 90% lower current capacity for 70% smaller footprint - making it unsuitable for any application demanding ≥10 A continuous current.

Availability

IRLR3715Z is available at Aetrix Electronics and suitable for server CPU VRMs, telecom DC-DC bricks, and industrial PLC I/O modules requiring stable component supply and long-term production continuity.

Supply support for IRLR3715Z includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to ISO/TS 16949 and IATF 16949.

The HEXFET Power MOSFET product line targets high-efficiency, high-reliability power conversion in computing, telecom, and industrial systems - emphasizing low R_DS(on), fast switching, and rugged avalanche performance.

FAQ

Is IRLR3715Z suitable for 3.3 V gate drive?

No - IRLR3715Z is specified for guaranteed R_DS(on) performance down to 4.5 V V_GS, not 3.3 V. At 3.3 V, R_DS(on) rises significantly (≥25 mΩ typical), increasing conduction loss and thermal stress. Use logic-level MOSFETs qualified for 3.3 V drive, such as IRLML6344, for true 3.3 V compatibility.

What is the maximum recommended PCB copper area for thermal relief?

For optimal thermal performance, the D-Pak drain pad should connect to ≥4 cm² of 2-oz copper on the component layer, with ≥4 thermal vias (0.3 mm diameter, filled or plated) to an internal ground plane. This achieves effective R_θJA ≈ 25°C/W in standard 4-layer boards, keeping T_J < 125°C at 30 W dissipation.

Does IRLR3715Z require a gate resistor for stability?

Yes - a 5–10 Ω non-inductive gate resistor is recommended between driver output and gate pin to suppress high-frequency oscillation caused by parasitic L_g–C_iss resonance. Omitting it risks gate voltage overshoot (>20 V), accelerated gate oxide degradation, and erratic switching behavior in high-dV/dt environments.

Can IRLR3715Z replace IRLU3715Z in the same PCB layout?

Yes - both share identical D-Pak (IRLR) and I-Pak (IRLU) footprints and pinouts (G-S-D), but IRLR3715Z has lower R_DS(on) (11 mΩ vs. 12.4 mΩ max) and higher I_D rating (49 A vs. 35 A). Thermal design must verify case temperature remains within limits due to higher current capability.

IRLR3715Z Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 20 V

Current - Continuous Drain (Id) @ 25°C:: 49A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 11mOhm @ 15A, 10V

Vgs(th) (Max) @ Id:: 2.55V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 11 nC @ 4.5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 810 pF @ 10 V

FET Feature:: -

Power Dissipation (Max):: 40W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-252AA (DPAK)

IRLR3715Z FAQ

1.How can I place an order for IRLR3715Z through Aetrix?

Please submit a Request for Quotation (RFQ) for IRLR3715Z on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRLR3715Z reliable?

The price and inventory of IRLR3715Z are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRLR3715Z is usually 5 days.

3.What payment methods are accepted for IRLR3715Z?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRLR3715Z transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRLR3715Z?

IRLR3715Z orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRLR3715Z order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRLR3715Z?

For technical support, including IRLR3715Z datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRLR3715Z requirements.

6.How does Aetrix verify that IRLR3715Z is sourced from the original manufacturer or authorized distributors?

All IRLR3715Z products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRLR3715Z meets industry standards.

7.What is the process for return or replacement of IRLR3715Z?

All IRLR3715Z units undergo pre-shipment inspection (PSI). If there is an issue with IRLR3715Z, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRLR3715Z part is unused and in its original packaging.

Return procedure for IRLR3715Z:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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