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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRLR3717PBF

Name: IRLR3717PBF
Brand: Infineon Technologies
SKU: IRLR3717PBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRLR3717PBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: IRLR3717PBF.pdf

Description:: MOSFET N-CH 20V 120A DPAK

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRLR3717PBF from Infineon Technologies is a 20V N-channel enhancement-mode HEXFET Power MOSFET in D-Pak package, optimized for high-frequency synchronous rectification with R_DS(on) = 3.4 mΩ @ V_GS = 10 V and Q_g = 21 nC. It delivers ultra-low gate impedance and fully characterized avalanche capability (E_AS = 1500 mJ), enabling use as a control or synchronous FET in buck converters for CPU core power delivery.

For engineers reviewing the IRLR3717PBF datasheet, IRLR3717PBF pinout, IRLR3717PBF application, or IRLR3717PBF equivalent, key selection criteria include its 4.5V gate drive compatibility, 120 A pulsed drain current, body diode reverse recovery charge (Q_rr = 13–19 nC), and junction-to-case thermal resistance of 1.69 °C/W - all critical for high-efficiency, high-density DC-DC designs.

Technical Context

This MOSFET employs planar silicon process technology to achieve low R_DS(on) and minimized gate-drain charge (Q_gd = 7.2 nC), directly reducing switching losses and C_dv/dt turn-on risk in hard-switched topologies. Its threshold voltage (V_GS(th) = 1.55–2.45 V) and negative temperature coefficient (–6.4 mV/°C) support stable gate drive across –55°C to +175°C operating range.

The device integrates a robust intrinsic body diode with t_rr = 22–33 ns and V_SD ≤ 1.0 V @ I_S = 12 A, enabling efficient freewheeling in synchronous buck stages without external Schottky diodes. Avalanche rating (I_AR = 8.2–12 A, E_AS = 1500 mJ) is validated under clamped inductive load conditions per JEDEC JESD24-11.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	20 V - Maximum blocking voltage compatible with 12 V input rails and transient margin in point-of-load converters
R_DS(on) max	4.0 mΩ @ V_GS = 10 V - Enables <1 W conduction loss at 15 A RMS, critical for >95% efficiency at high current
Q_g	21 nC - Low total gate charge reduces driver power demand and enables fast switching up to 1 MHz
I_D continuous	89 A @ T_C = 25°C - Supports high-current output stages with PCB-mount thermal management
R_θJC	1.69 °C/W - Allows direct heatsinking to case for thermal design with <10°C rise at 50 W dissipation
Q_rr	13–19 nC - Quantified reverse recovery charge minimizes cross-conduction loss during dead-time transitions
E_AS	1500 mJ - Single-pulse avalanche energy supports robustness against inductive switching transients

Pinout & Package

IRLR3717PBF uses the industry-standard D-Pak (TO-252AA) surface-mount package with exposed drain pad for enhanced thermal performance and mechanical stability on PCBs.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Source)	Source terminal (S)	Low-side reference node; connects to ground or output rail return path; electrically tied to source metallization and substrate
Pin 2 (Gate)	Control terminal (G)	High-impedance MOS gate requiring <100 nA leakage; driven by PWM controller with 4.5–10 V logic-level signals
Pin 3 (Drain)	Power terminal (D)	Exposed copper pad on bottom surface; primary current path for high-side or low-side switching; thermally coupled to PCB copper pour

Key Features

Feature	Design Value
Ultra-low R_DS(on) at 4.5 V V_GS	Enables direct drive from 5 V or 3.3 V controllers without level-shifting, reducing BOM count and layout complexity
Fully characterized avalanche performance	Validated E_AS and I_AR ratings allow safe operation under unclamped inductive switching without derating
Low Q_gd/Q_gs1 ratio	Reduces susceptibility to C_dv/dt induced turn-on in high-dV/dt nodes, mitigating shoot-through risk in synchronous rectifiers
Optimized body diode t_rr and Q_rr	Minimizes reverse recovery loss and associated EMI in hard-switched topologies, improving light-load efficiency

Applications

Server CPU Core VRM

Telecom DC-DC Isolated Converter

Use Scenario: High-current, multi-phase buck converter delivering 1–2 V @ >100 A to modern x86 processors.

IC Role / Device Role / Timing Role: Synchronous FET in low-side position, commutated at 300–1000 kHz with precise dead-time control.

Use Value: 3.4 mΩ R_DS(on) and 21 nC Q_g enable >94% efficiency at 12 A per phase while maintaining thermal margin on 2-oz copper PCBs.

Use Scenario: Secondary-side synchronous rectifier in 48 V input telecom brick supplying 12 V @ 20 A.

IC Role / Device Role / Timing Role: Active rectifier replacing Schottky diode in forward or LLC topology, driven by transformer-coupled or active gate control.

Use Value: Body diode Q_rr = 13–19 nC and V_SD ≤ 1.0 V reduce conduction and recovery losses, increasing full-load efficiency by 1.2–1.8% vs. discrete diode solution.

Industrial PLC Power Module

Automotive ADAS Domain Controller Supply

Use Scenario: Compact 24 V input buck regulator powering FPGA, memory, and analog subsystems in programmable logic controllers.

IC Role / Device Role / Timing Role: Control FET in high-side configuration with bootstrap gate drive, switching at 500 kHz.

Use Value: 20 V V_DS rating provides 2× transient margin over 12 V nominal rail; 175°C T_J rating ensures reliability in sealed enclosures.

Use Scenario: Point-of-load converter supplying 1.8 V to radar SoC in automotive ADAS domain controller with ASIL-B functional safety requirements.

IC Role / Device Role / Timing Role: Low-side synchronous FET in dual-phase buck stage, operated with current-mode control and cycle-by-cycle current limiting.

Use Value: Fully characterized avalanche (E_AS = 1500 mJ) and -55°C to +175°C T_STG/T_J range support robustness across automotive temperature extremes and load dump events.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRLR3715PBF	R_DS(on) = 5.0 mΩ @ 10 V; Q_g = 17 nC; V_DS = 20 V	Higher conduction loss at >10 A; lower gate charge reduces drive loss	Select when gate drive capability is limited but thermal headroom exists for higher R_DS(on)
SI7157DP-T1-GE3	R_DS(on) = 3.8 mΩ @ 4.5 V; Q_g = 24 nC; SO-8 package; no exposed drain pad	Limited thermal performance (R_θJA ≈ 62 °C/W); unsuitable for >30 A continuous	Prefer only for space-constrained, low-power (<15 A) applications where D-Pak mounting is impractical

Compared with IRLR3717PBF, IRLR3715PBF trades conduction efficiency for slightly faster switching, while SI7157DP sacrifices thermal robustness and current handling for small-outline packaging - making IRLR3717PBF optimal for high-current, thermally demanding synchronous rectification.

Availability

IRLR3717PBF is available at Aetrix Electronics and suitable for server CPU VRMs, telecom DC-DC converters, and industrial PLC power modules requiring stable component supply and long-term production continuity.

Supply support for IRLR3717PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs and discrete devices.

The IRLR series targets high-efficiency, high-frequency power conversion with logic-level gate drive compatibility and ruggedized packaging - designed specifically for synchronous rectification and CPU/GPU core power delivery.

FAQ

Is IRLR3717PBF suitable for 3.3 V gate drive?

No - while rated for 4.5 V V_GS minimum for full R_DS(on) specification, its V_GS(th) range (1.55–2.45 V) means it will conduct at 3.3 V but with significantly elevated R_DS(on) (>10 mΩ). Reliable operation requires ≥4.5 V gate drive to achieve specified 3.4–4.0 mΩ on-resistance.

What is the maximum recommended PCB copper area for thermal relief?

For optimal thermal performance, Infineon recommends a minimum 400 mm² (20 mm × 20 mm) 2-oz copper pour connected to the exposed drain pad via ≥6 thermal vias (0.3 mm diameter, 0.8 mm pitch). This achieves near-datasheet R_θJC = 1.69 °C/W in standard FR-4 layouts.

Does IRLR3717PBF have built-in ESD protection?

No - the device lacks integrated gate protection diodes. External 10 Ω gate resistor and 12 V Zener clamp between gate and source are required per Infineon application note AN-1001 to prevent electrostatic damage during handling and PCB assembly.

Can IRLR3717PBF replace IRLU3717PBF in the same footprint?

Yes - both share identical D-Pak (TO-252AA) package dimensions and pinout (G-S-D), but IRLR3717PBF has lower R_DS(on) (3.4 vs. 4.6 mΩ @ 10 V) and higher I_D (89 vs. 81 A). Thermal and electrical performance improves, provided PCB copper and gate drive support the higher current capability.

IRLR3717PBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tube

Product Status:: Discontinued at Digi-Key

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 20 V

Current - Continuous Drain (Id) @ 25°C:: 120A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 4mOhm @ 15A, 10V

Vgs(th) (Max) @ Id:: 2.45V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 31 nC @ 4.5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2830 pF @ 10 V

FET Feature:: -

Power Dissipation (Max):: 89W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-252AA (DPAK)

IRLR3717PBF FAQ

1.How can I place an order for IRLR3717PBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRLR3717PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRLR3717PBF reliable?

The price and inventory of IRLR3717PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRLR3717PBF is usually 5 days.

3.What payment methods are accepted for IRLR3717PBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRLR3717PBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRLR3717PBF?

IRLR3717PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRLR3717PBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRLR3717PBF?

For technical support, including IRLR3717PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRLR3717PBF requirements.

6.How does Aetrix verify that IRLR3717PBF is sourced from the original manufacturer or authorized distributors?

All IRLR3717PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRLR3717PBF meets industry standards.

7.What is the process for return or replacement of IRLR3717PBF?

All IRLR3717PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRLR3717PBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRLR3717PBF part is unused and in its original packaging.

Return procedure for IRLR3717PBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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