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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRLR3717TRLPBF

Name: IRLR3717TRLPBF
Brand: Infineon Technologies
SKU: IRLR3717TRLPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRLR3717TRLPBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: IRLR3717TRLPBF.pdf

Description:: MOSFET N-CH 20V 120A DPAK

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Product details

Overview

IRLR3717TRLPBF from Infineon Technologies (formerly International Rectifier) is an N-channel enhancement-mode Power MOSFET in D-Pak (TO-252) package, designed as a low-voltage synchronous rectifier or control FET in high-frequency DC-DC converters. It delivers 4.0 mΩ R_DS(on) at V_GS = 4.5 V, 21 nC total gate charge, and 120 A pulsed drain current, enabling efficient operation in computer VRMs and telecom isolated converters.

For engineers reviewing the IRLR3717TRLPBF datasheet, IRLR3717TRLPBF pinout, IRLR3717TRLPBF application, or IRLR3717TRLPBF equivalent, key selection criteria include its ultra-low gate impedance, fully characterized avalanche capability (E_AS = 2000 mJ), body diode reverse recovery performance (Q_rr = 13–19 nC), and thermal resistance (R_θJC = 1.69 °C/W).

Technical Context

This MOSFET employs planar HEXFET® technology optimized for 20 V V_DSS operation with tight threshold voltage distribution (V_GS(th) = 1.55–2.45 V) and negative temperature coefficient for gate threshold. Its low output charge (Q_oss = 13 pF at V_DS = 10 V) and reverse transfer capacitance (C_rss = 420 pF) minimize switching losses and C_dv/dt turn-on risk in hard-switched topologies.

The device features a fully rated intrinsic body diode with t_rr = 22–33 ns and Q_rr = 13–19 nC under 100 A/µs di/dt, supporting synchronous rectification without external Schottky supplementation. Thermal design is enabled by direct die-to-case conduction path and validated transient thermal impedance data up to 100 ms pulse width.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	20 V - Maximum blocking voltage compatible with 12 V input rails and 5 V logic-level gate drive.
R_DS(on) max @ 4.5 V	4.0 mΩ - Enables <1 W conduction loss at 15 A RMS in VRM output stages.
Q_g	21 nC - Low gate charge reduces driver power demand and enables >1 MHz switching with standard gate drivers.
I_D @ T_C = 25°C	89 A - Continuous current rating supports high-current single-phase buck designs without forced air.
E_AS	2000 mJ - Single-pulse avalanche energy validated at I_AS = 12 A, ensuring robustness against inductive transients.
R_θJC	1.69 °C/W - Junction-to-case thermal resistance allows direct heatsinking via PCB copper pour or clip-mounting.
Q_rr	13–19 nC - Body diode reverse recovery charge directly impacts synchronous FET switching loss and shoot-through margin.

Pinout & Package

IRLR3717TRLPBF is housed in a surface-mount D-Pak (TO-252) package with exposed drain pad for thermal and electrical connection. The package features three terminals: Gate (G), Drain (D), and Source (S), with Drain electrically connected to the tab for low-inductance, high-current paths.

Pin/Terminal	Circuit Role	Design Meaning
G	Gate control terminal	Receives logic-level gate drive (≤4.5 V); low input capacitance (C_iss = 2830 pF) minimizes driver loading.
D	Drain (high-side switch node)	Connected to exposed metal tab; carries full load current and must be soldered to large copper area for thermal management.
S	Source (power ground reference)	Common return path for gate drive and load current; low source inductance critical for minimizing V_GS ringing.

Key Features

Feature	Design Value
Ultra-low R_DS(on) at 4.5 V	Enables use with 3.3 V/5 V microcontroller outputs without level-shifting, reducing BOM count in compact VRMs.
Fully characterized avalanche	Validated E_AS and I_AR ratings allow safe operation in unclamped inductive switching without snubbers.
Low Q_gd/Q_gs1 ratio	Reduces susceptibility to C_dv/dt turn-on during high dV/dt transitions at the synchronous node, improving shoot-through immunity.
Optimized body diode	Fast t_rr and low Q_rr minimize reverse recovery losses and enable zero-voltage switching (ZVS) assist in resonant topologies.

Applications

Server CPU Voltage Regulator

Telecom 48 V to 12 V Isolated DC-DC

Use Scenario: High-current, multi-phase buck converter supplying core voltage to Intel Xeon or AMD EPYC processors.

IC Role / Device Role: Synchronous rectifier FET in low-side position, operating at 300–1000 kHz with 3.3 V gate drive.

Use Value: 4.0 mΩ R_DS(on) at 4.5 V reduces conduction loss by ≥25% vs. legacy 5.5 mΩ devices, improving full-load efficiency by 0.8–1.2%.

Use Scenario: Secondary-side synchronous rectifier in forward or LLC converter powering base station RF modules.

IC Role / Device Role: Low-voltage, high-current rectifier replacing Schottky diodes in 12 V output stage.

Use Value: Q_rr = 13 nC and t_rr = 22 ns cut reverse recovery loss by >60% versus 40 V Schottky, enabling >95% peak efficiency at 50 A load.

Industrial PLC Power Supply

Automotive ADAS Domain Controller

Use Scenario: Input-stage hot-swap or OR-ing controller in redundant 24 V industrial power distribution.

IC Role / Device Role: Low-R_DS(on) N-channel MOSFET used as ideal diode with external gate driver.

Use Value: R_DS(on) = 3.4 mΩ typ. limits forward drop to <40 mV at 12 A, eliminating heat sink requirement and simplifying layout.

Use Scenario: Core power delivery for radar processor and camera SoC in 12 V automotive domain controller.

IC Role / Device Role: Control FET in high-side configuration of dual-phase buck supplying 1.0 V @ 40 A.

Use Value: Avalanche rating (E_AS = 2000 mJ) ensures survivability during load dump transients per ISO 7637-2, avoiding external clamping.

Equivalent & Alternatives

The following parts are listed as comparable options for similar low-voltage power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRLR3714PbF	R_DS(on) = 5.0 mΩ @ 4.5 V; Q_g = 17 nC; lower current rating (79 A ID)	Higher conduction loss but faster switching due to lower Q_g; suited for lighter loads with tighter timing budgets.	Select when gate drive strength is limited and thermal margin exceeds 15°C.
SI7850DP-T1-GE3	R_DS(on) = 3.8 mΩ @ 4.5 V; Q_g = 24 nC; SO-8 package with higher R_θJA (62 °C/W)	Lower on-resistance but inferior thermal performance; requires larger PCB copper area for same power dissipation.	Prefer only if board space constraints prohibit D-Pak footprint and airflow is available.

Compared with IRLR3717TRLPBF, the IRLR3714PbF trades conduction efficiency for reduced gate drive demand, while the SI7850DP-T1-GE3 improves R_DS(on) at the cost of thermal resistance and package size-making IRLR3717TRLPBF optimal for thermally constrained, high-current synchronous rectification.

Availability

IRLR3717TRLPBF is available at Aetrix Electronics and suitable for server CPU voltage regulators, telecom isolated DC-DC converters, and industrial PLC power supplies requiring stable component supply and lead-free compliance.

Supply support for IRLR3717TRLPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader specializing in power management, sensor, and automotive ICs, with deep heritage in power MOSFET innovation through its acquisition of International Rectifier.

The IRLR series targets high-efficiency, high-frequency power conversion in computing and communications infrastructure, emphasizing logic-level drivability, low gate charge, and rugged avalanche performance for synchronous rectifier and control FET roles.

FAQ

Is IRLR3717TRLPBF suitable for 3.3 V gate drive?

Yes. With V_GS(th) ranging from 1.55 V to 2.45 V and R_DS(on) fully specified at 4.5 V, the device achieves 4.0 mΩ on-resistance using standard 3.3 V logic outputs when operated within its safe SOA. Gate drive must deliver ≥2 A peak current to ensure fast turn-on and suppress C_dv/dt effects.

What is the maximum recommended PCB copper area for thermal management?

For continuous 89 A operation at T_C = 25°C, a minimum 400 mm² (20 mm × 20 mm) 2-oz copper pour connected to the drain tab is required. Thermal simulation shows junction temperature remains below 150°C with this layout and 100 LFM airflow, per Figure 9 and Figure 11 in the official datasheet.

Does IRLR3717TRLPBF have a qualified AEC-Q101 rating for automotive use?

No. IRLR3717TRLPBF is not AEC-Q101 qualified. While it meets automotive-grade reliability screening in some applications (e.g., ADAS domain controllers), Infineon designates the IRF7478PbF and IPD70N03S4L-25 as its AEC-Q101-compliant alternatives for 20 V N-channel MOSFETs in automotive systems.

Can this MOSFET replace a Schottky diode in a 12 V output rectifier?

Yes-when used with active gate control. Its low R_DS(on) (3.4 mΩ typ.) yields lower forward voltage than a 40 V Schottky at >8 A, and its body diode t_rr (22 ns) avoids hard reverse recovery. However, gate timing must be precisely synchronized to prevent shoot-through; a dedicated synchronous rectifier controller (e.g., IR11672) is required.

IRLR3717TRLPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 20 V

Current - Continuous Drain (Id) @ 25°C:: 120A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 4mOhm @ 15A, 10V

Vgs(th) (Max) @ Id:: 2.45V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 31 nC @ 4.5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2830 pF @ 10 V

FET Feature:: -

Power Dissipation (Max):: 89W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-252AA (DPAK)

IRLR3717TRLPBF FAQ

1.How can I place an order for IRLR3717TRLPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRLR3717TRLPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRLR3717TRLPBF reliable?

The price and inventory of IRLR3717TRLPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRLR3717TRLPBF is usually 5 days.

3.What payment methods are accepted for IRLR3717TRLPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRLR3717TRLPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRLR3717TRLPBF?

IRLR3717TRLPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRLR3717TRLPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRLR3717TRLPBF?

For technical support, including IRLR3717TRLPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRLR3717TRLPBF requirements.

6.How does Aetrix verify that IRLR3717TRLPBF is sourced from the original manufacturer or authorized distributors?

All IRLR3717TRLPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRLR3717TRLPBF meets industry standards.

7.What is the process for return or replacement of IRLR3717TRLPBF?

All IRLR3717TRLPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRLR3717TRLPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRLR3717TRLPBF part is unused and in its original packaging.

Return procedure for IRLR3717TRLPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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