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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRLR3717TRPBF

Name: IRLR3717TRPBF
Brand: Infineon Technologies
SKU: IRLR3717TRPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRLR3717TRPBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: IRLR3717TRPBF.pdf

Description:: MOSFET N-CH 20V 120A DPAK

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Product details

Overview

IRLR3717TRPBF from Infineon Technologies (formerly International Rectifier) is a 20 V, 120 A N-channel HEXFET Power MOSFET in D-Pak (TO-252) package, optimized for high-frequency synchronous buck converters in CPU VRMs and telecom DC-DC supplies. It delivers 3.4 mΩ R_DS(on) at V_GS = 10 V, 21 nC total gate charge, and features fully characterized avalanche capability with 89 mJ single-pulse E_AS.

For engineers reviewing the IRLR3717TRPBF datasheet, IRLR3717TRPBF pinout, IRLR3717TRPBF application, or IRLR3717TRPBF equivalent, key selection criteria include low R_DS(on) at 4.5 V gate drive, ultra-low gate impedance for fast switching, body diode reverse recovery performance (Q_rr = 13–19 nC), and thermal resistance (R_θJC = 1.69 °C/W) for high-current PCB-mounted power stages.

Technical Context

This MOSFET employs planar silicon HEXFET architecture with optimized cell pitch and trench-free process to achieve ultra-low on-resistance while maintaining robust unclamped inductive switching (UIS) performance. Its gate threshold voltage (V_GS(th) = 1.55–2.45 V) and negative temperature coefficient (−6.4 mV/°C) enable stable parallel operation in multiphase VRMs.

The device integrates an intrinsic body diode with 1.0 V forward voltage (V_SD) at 12 A and 22–33 ns reverse recovery time (t_rr), supporting synchronous rectification without external Schottky diodes. Its C_iss/C_oss/C_rss values (2830/920/420 pF) are tuned for minimal Miller effect and reduced dv/dt-induced turn-on risk in high-side switching configurations.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	20 V - Supports 12 V input rails with margin for transient overshoot in point-of-load converters
R_DS(on) max @ 10 V	4.0 mΩ - Enables <1 W conduction loss at 15 A RMS in 4-phase CPU VRM designs
Q_g	21 nC - Allows full switching within 20 ns using 1 A gate driver, minimizing dead-time losses
I_D @ T_C = 25°C	120 A - Sustains peak load currents in server processor power stages without derating
E_AS	89 mJ - Withstands single-pulse inductive energy during startup/fault conditions in synchronous buck topologies
R_θJC	1.69 °C/W - Enables direct heatsink mounting via exposed drain pad for thermal management under 100 W dissipation
t_rr	22–33 ns - Limits cross-conduction loss during body-diode commutation in high-frequency (>500 kHz) sync rectifiers

Pinout & Package

IRLR3717TRPBF uses the D-Pak (TO-252) surface-mount package with exposed drain pad for thermal and electrical connection. The three-terminal configuration supports high-current source-drain paths with low-inductance gate routing.

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	Main current path output / thermal interface	Exposed copper pad soldered to PCB ground plane or heatsink; carries full load current and dissipates heat directly
Source	Reference node for gate control / return path	Low-impedance connection to power ground; critical for accurate gate drive referencing and current sensing
Gate	Control terminal for channel modulation	High-impedance input requiring <21 nC charge; sensitive to layout parasitics-must be routed short and away from switching nodes

Key Features

Feature	Design Value
Ultra-low R_DS(on) at 4.5 V	4.6 mΩ max - Enables efficient operation directly from 5 V logic-level gate drivers in compact VRMs
Fully characterized avalanche	89 mJ E_AS - Eliminates need for external snubbers in non-isolated DC-DC converters subjected to load dump or inductive kick
Low Q_gd/Q_gs1 ratio	7.2 nC / 6.4 nC ≈ 1.13 - Reduces susceptibility to dv/dt-induced false turn-on in high-side synchronous FET applications
Optimized body diode	Q_rr = 13–19 nC - Minimizes recovery-related shoot-through loss when used as low-side switch in synchronous buck

Applications

Server CPU Voltage Regulator

Telecom Isolated DC-DC Converter

Use Scenario: 4-phase 12 V input → 0.8–1.8 V output VRM supplying modern x86 processors with dynamic current up to 200 A.

IC Role / Device Role: Low-side synchronous rectifier MOSFET in each phase leg, operating at 300–600 kHz switching frequency.

Use Value: 3.4 mΩ R_DS(on) reduces conduction loss by >30% vs. legacy 5 mΩ devices, improving full-load efficiency by ~0.8% at 150 A.

Use Scenario: Secondary-side synchronous rectification in 48 V input → 12 V isolated flyback or forward converter for base station power modules.

IC Role / Device Role: High-current secondary-side switch replacing Schottky diodes, driven by transformer-coupled gate signals.

Use Value: 120 A continuous rating and 1.69 °C/W R_θJC allow direct heatsink mounting, enabling >94% efficiency at 50 A output without forced air cooling.

Industrial Motor Drive Inverter

Automotive ADAS Power Supply

Use Scenario: Half-bridge high-side switch in 24 V BLDC motor gate driver stage for HVAC blowers and pumps.

IC Role / Device Role: N-channel high-side switch with bootstrap gate drive, handling 30 A peak phase current at 20 kHz PWM.

Use Value: 20 V V_DS rating provides 2× margin over 12 V nominal bus; 22 ns t_rr prevents shoot-through during rapid polarity reversal.

Use Scenario: Input-stage hot-swap and reverse-polarity protection in 12 V automotive camera module power supply.

IC Role / Device Role: Low-R_DS(on) N-channel MOSFET configured as ideal diode in series with battery input.

Use Value: 4.0 mΩ R_DS(on) limits voltage drop to <0.5 V at 125 A inrush, meeting ISO 7637-2 pulse 4a surge immunity requirements.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRLR3714TRPBF	Higher R_DS(on) (5.0 mΩ @ 10 V), same 20 V rating and D-Pak package	Suitable for lower-current (<80 A) VRMs where cost sensitivity outweighs efficiency gain	Select when thermal budget allows higher conduction loss and gate drive capability is limited to <15 nC
SI7850DP-T1-GE3	Lower Q_g (15 nC) but higher R_DS(on) (5.2 mΩ); SO-8 package with no exposed drain pad	Better suited for space-constrained consumer DC-DC where PCB area is prioritized over thermal performance	Choose only if board layout cannot accommodate D-Pak footprint and junction temperature must stay <125°C

Compared with IRLR3717TRPBF, the IRLR3714TRPBF trades 25% higher conduction loss for lower gate charge, while the SI7850DP sacrifices thermal performance and current rating for smaller footprint-neither offers identical combination of 120 A rating, 4.0 mΩ, and D-Pak thermal interface.

Availability

IRLR3717TRPBF is available at Aetrix Electronics and suitable for server CPU voltage regulators, telecom isolated DC-DC converters, and industrial motor drive inverters requiring stable component supply across multi-year production cycles.

Supply support for IRLR3717TRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with leadership in silicon and wide-bandgap power devices.

The IRLR series belongs to Infineon's legacy HEXFET Power MOSFET product line, engineered specifically for high-efficiency, high-frequency DC-DC conversion in computing and communications infrastructure.

FAQ

Is IRLR3717TRPBF lead-free and RoHS compliant?

Yes, IRLR3717TRPBF is lead-free and RoHS compliant per EU Directive 2011/65/EU. The "PbF" suffix in the part number explicitly denotes lead-free packaging. All plating, die attach, and molding compounds meet JEDEC J-STD-020 moisture sensitivity level 1 and IPC/JEDEC J-STD-033 handling requirements for reflow soldering.

What is the maximum safe operating frequency for IRLR3717TRPBF in a synchronous buck converter?

IRLR3717TRPBF supports reliable operation up to 1 MHz in synchronous buck topologies when paired with appropriate gate drivers and PCB layout. Its 21 nC Q_g, 9.1 nC Q_sw, and 1.69 °C/W R_θJC enable efficient switching at 500–800 kHz in high-density VRMs, provided gate drive strength exceeds 1 A peak and thermal vias under the drain pad are implemented.

Can IRLR3717TRPBF be used in parallel configurations?

Yes, IRLR3717TRPBF supports paralleling due to its negative V_GS(th) temperature coefficient (−6.4 mV/°C), which promotes current sharing across multiple devices. For stable operation, use matched gate resistors (≤1 Ω), symmetrical PCB traces, and shared source Kelvin sensing to avoid oscillation or thermal runaway under transient loads.

Does IRLR3717TRPBF require a gate resistor for EMI suppression?

A gate resistor (typically 2.2–10 Ω) is recommended between driver output and gate terminal to dampen ringing caused by gate-drain capacitance (C_rss = 420 pF) and PCB inductance. This improves EMI performance and prevents spurious turn-on during high dv/dt events, especially in high-side configurations where drain voltage swings from 0 V to 12 V rapidly.

IRLR3717TRPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 20 V

Current - Continuous Drain (Id) @ 25°C:: 120A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 4mOhm @ 15A, 10V

Vgs(th) (Max) @ Id:: 2.45V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 31 nC @ 4.5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2830 pF @ 10 V

FET Feature:: -

Power Dissipation (Max):: 89W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-252AA (DPAK)

IRLR3717TRPBF FAQ

1.How can I place an order for IRLR3717TRPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRLR3717TRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRLR3717TRPBF reliable?

The price and inventory of IRLR3717TRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRLR3717TRPBF is usually 5 days.

3.What payment methods are accepted for IRLR3717TRPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRLR3717TRPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRLR3717TRPBF?

IRLR3717TRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRLR3717TRPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRLR3717TRPBF?

For technical support, including IRLR3717TRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRLR3717TRPBF requirements.

6.How does Aetrix verify that IRLR3717TRPBF is sourced from the original manufacturer or authorized distributors?

All IRLR3717TRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRLR3717TRPBF meets industry standards.

7.What is the process for return or replacement of IRLR3717TRPBF?

All IRLR3717TRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRLR3717TRPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRLR3717TRPBF part is unused and in its original packaging.

Return procedure for IRLR3717TRPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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