Infineon Technologies IRLR3717TRRPBF

Overview

IRLR3717TRRPBF from Infineon Technologies is a 20 V, 4.0 mΩ (max), 120 A N-channel D-Pak Power MOSFET optimized for high-frequency synchronous buck converters in CPU VRM and telecom DC-DC applications. It delivers ultra-low gate impedance (Qg = 21 nC typ.), fully characterized avalanche capability (EAS = 2000 mJ), and robust body diode performance (trr = 22 ns, Qrr = 13 nC) with 1.69 °C/W junction-to-case thermal resistance.

For engineers reviewing the IRLR3717TRRPBF datasheet, IRLR3717TRRPBF pinout, IRLR3717TRRPBF application, or IRLR3717TRRPBF equivalent, key selection criteria include RDS(on) at 4.5 V (3.4 mΩ typ.), gate charge partitioning (Qgs2 = 1.9 nC, Qgd = 7.2 nC), SOA limits at 100 µs pulse width, and body diode reverse recovery behavior under di/dt = 100 A/µs conditions.

Technical Context

This HEXFET device uses planar stripe cell structure with optimized gate oxide thickness to achieve low RDS(on) while maintaining 20 V VDSS rating and stable threshold voltage (VGS(th) = 2.0 V typ., -6.4 mV/°C tempco). Its low Crss (420 pF) and Qgd/Qgs2 ratio minimize Cdv/dt-induced turn-on risk in synchronous rectifier configurations.

The MOSFET is characterized for unclamped inductive switching across TJ = 25°C to 175°C, with linear derating of ID from 120 A at TC = 25°C to 44 A at TC = 100°C. Avalanche energy EAS is specified up to 2000 mJ at ID = 12 A, validated per JEDEC JESD24-11 test methodology.

Key Specifications

Pinout & Package

IRLR3717TRRPBF is housed in a surface-mount D-Pak (TO-252AA) package with exposed drain pad for thermal enhancement. The package features three terminals: Gate (G), Drain (D), and Source (S), with Drain electrically connected to the metal tab for low-inductance heat transfer.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with IRLR3717TRRPBF, IRLR3714PBF trades conduction efficiency for gate drive simplicity and lower cost, while SI7850DP-T1-GE3 offers comparable RDS(on) in a smaller footprint but sacrifices thermal performance and avalanche robustness-making it suitable only for lower-power, space-constrained designs.

Availability

IRLR3717TRRPBF is available at Aetrix Electronics and suitable for server CPU voltage regulators, telecom DC-DC converters, industrial PLC power modules, and automotive ADAS domain controller supplies requiring stable component supply and long-term production continuity.

Supply support for IRLR3717TRRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to ISO/TS 16949 and IECQ QC 080000.

This part belongs to Infineon's HEXFET Power MOSFET product line, engineered specifically for high-efficiency, high-frequency DC-DC conversion in computing, telecom, and industrial power systems where low RDS(on), fast switching, and avalanche ruggedness are mandatory.

FAQ

What is the maximum continuous drain current at 100°C case temperature?

The IRLR3717TRRPBF supports 44 A continuous drain current at TC = 100°C, as specified in the Absolute Maximum Ratings table. This value reflects linear derating from 120 A at TC = 25°C using the stated 0.59 W/°C derating factor, and assumes proper heatsinking to maintain case temperature within limit.

Does this MOSFET require a gate resistor for safe operation in synchronous buck topologies?

Yes-a gate resistor (typically 2–10 Ω) is required to dampen ringing and control turn-on/turn-off speed. With Qg = 21 nC and typical gate driver output impedance, an external resistor prevents overshoot and reduces EMI. Values below 2 Ω increase risk of oscillation; above 10 Ω extends switching time and raises switching losses disproportionately.

Can IRLR3717TRRPBF be used as a high-side switch with bootstrap gate drive?

No-it is not rated for high-side bootstrap operation due to insufficient VGS rating margin. While VGS(max) = ±20 V, the body diode's reverse recovery (trr = 22 ns) and lack of specified dv/dt immunity make it unsuitable for high-side use where VDS swings rapidly between Vin and ground. It is designed exclusively for low-side or synchronous rectifier roles.

How does the 1.69 °C/W RθJC affect PCB layout requirements?

The 1.69 °C/W RθJC means thermal performance depends almost entirely on the heatsink attached to the exposed drain pad-not PCB copper area. Layout must provide ≥10 mm² solder mask opening under the tab, minimum 3x thermal vias (0.3 mm diameter) connecting to inner-layer copper pours, and avoid silkscreen or solder mask over the tab to ensure mechanical and thermal contact with the heatsink.