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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRLR3802TRPBF

Name: IRLR3802TRPBF
Brand: Infineon Technologies
SKU: IRLR3802TRPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRLR3802TRPBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: IRLR3802TRPBF.pdf

Description:: MOSFET N-CH 12V 84A DPAK

Quantity:: RFQ Add To RFQ list

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Inventory:9,872

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Product details

Overview

IRLR3802TRPBF from Infineon Technologies (formerly International Rectifier) is a 12 V, 84 A N-channel HEXFET Power MOSFET in D-Pak package, optimized for synchronous buck converters and point-of-load power management. It features 8.5 mΩ R_DS(on) at V_GS = 4.5 V, 27 nC total gate charge, and 300 mJ single-pulse avalanche energy - enabling high-efficiency, high-frequency switching in compact DC/DC regulators for computing and portable electronics.

For engineers reviewing the IRLR3802TRPBF datasheet, IRLR3802TRPBF pinout, IRLR3802TRPBF application, or IRLR3802TRPBF equivalent, key selection criteria include low-voltage gate drive compatibility (3.3 V/5 V), ultra-low conduction loss at 12 V bus, body diode recovery performance (52–78 ns t_rr), thermal resistance (1.7 °C/W R_θJC), and lead-free D-Pak packaging for surface-mount power stages.

Technical Context

This MOSFET employs planar silicon HEXFET architecture with fully characterized avalanche capability and optimized gate charge partitioning (Q_gs1 = 3.6 nC, Q_gd = 10 nC). Its threshold voltage (0.6–1.9 V) and negative temperature coefficient (−3.2 mV/°C) support stable current sharing in parallel configurations.

Designed for unclamped inductive switching, it sustains 20 A avalanche current and 300 mJ single-pulse energy under defined test conditions (L = 0.1 mH, I_AS = 20 A). The body diode exhibits V_SD = 0.81 V at 12 A, T_J = 25°C, with reverse recovery time tightly specified across temperature (50–78 ns).

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	12 V - supports 12 V input rail systems without derating; suitable for intermediate bus architectures
R_DS(on) max	8.5 mΩ @ V_GS = 4.5 V, T_J = 25°C - enables <1 W conduction loss at 12 A, critical for PoL efficiency
Q_g	27 nC typ. - low gate drive power requirement for 500 kHz–1 MHz switching in synchronous buck stages
I_D continuous	84 A @ T_C = 25°C - defines maximum steady-state current handling with PCB heatsinking
E_AS	300 mJ - quantifies robustness against inductive turn-off transients in non-synchronous or fault conditions
R_θJC	1.7 °C/W - enables direct thermal path to heatsink or copper pour; limits junction rise to ≤115°C at 88 W P_D
t_rr	52–78 ns - determines dead-time requirements and body diode conduction loss in synchronous rectification

Pinout & Package

IRLR3802TRPBF is housed in a lead-free D-Pak (TO-252AA) surface-mount package with exposed drain pad for thermal and electrical connection. Pin assignment is standardized per JEDEC MO-247: Gate (G), Drain (D), Source (S) - with Drain connected to the large bottom-side thermal tab.

Pin/Terminal	Circuit Role	Design Meaning
G	Gate control terminal	Accepts 3.3 V/5 V logic-level drive; threshold voltage 0.6–1.9 V ensures turn-on with standard microcontroller GPIO
D	Drain (high-side switch node)	Connected to internal die backside and external thermal pad; carries full load current and must be soldered to ≥1 in² copper area
S	Source (power return / reference)	Provides low-impedance return path for load current; ties to power ground plane and gate driver return

Key Features

Feature	Design Value
Ultra-low R_DS(on) at 4.5 V	Enables efficient operation directly from 5 V gate drivers without level-shifting, reducing BOM count in PoL modules
Fully characterized avalanche rating	Guarantees safe operation during inductive turn-off events without external snubbers in synchronous buck topologies
Low Q_gd/Q_g ratio (≈37%)	Improves hard-switching EMI profile and reduces Miller-induced shoot-through risk in high-dV/dt environments
Lead-free D-Pak package	Supports RoHS-compliant reflow assembly; exposed drain pad delivers 1.7 °C/W thermal resistance to heatsink or PCB

Applications

Server VRM Core Switch

Laptop CPU Voltage Regulator

Use Scenario: High-current, multi-phase buck converter supplying core voltage to Intel Xeon or AMD EPYC processors.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier in 300–600 kHz phase-leg, conducting >60 A peak current per phase.

Use Value: 8.5 mΩ R_DS(on) minimizes conduction loss at 12 A–25 A per phase, improving VRM efficiency by ≥0.8% over 10 mΩ alternatives.

Use Scenario: Single-phase 500 kHz buck regulator delivering 1.0–1.3 V to mobile CPU under dynamic load (0–40 A).

IC Role / Device Role / Timing Role: High-efficiency low-side switch with fast body diode recovery to reduce dead-time losses.

Use Value: 52 ns t_rr at 25°C enables <50 ns dead-time setting, cutting body diode conduction loss by ~35% vs. 100 ns parts.

Network Equipment PoL Module

Portable SSD Power Rail

Use Scenario: Compact 12 V-to-3.3 V/5 V DC/DC module powering FPGA I/O banks or PHY interfaces in 1U switches.

IC Role / Device Role / Timing Role: Primary power switch in space-constrained, thermally isolated PoL stage operating up to 1 MHz.

Use Value: 27 nC Q_g allows clean 1 MHz switching with <1 W gate drive loss using 1-A peak driver ICs like IR2110.

Use Scenario: Dual-rail 12 V-to-1.8 V/3.3 V converter inside M.2 NVMe SSD enclosure with strict thermal envelope.

IC Role / Device Role / Timing Role: Low-R_DS(on) switch enabling >92% efficiency at 3 A load while maintaining T_J < 105°C on 2-layer PCB.

Use Value: 1.7 °C/W R_θJC permits direct thermal coupling to metal shield, eliminating need for external heatsink.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRLR3702TRPBF	R_DS(on) = 12 mΩ @ 4.5 V; Q_g = 21 nC; V_DS = 20 V	Higher R_DS(on) increases conduction loss by ~40% at 12 A; higher V_DS margin suits 19 V input rails	Select when 20 V rating is required and efficiency loss is acceptable for cost-sensitive designs
SI2302DS-T1-GE3	R_DS(on) = 35 mΩ @ 4.5 V; SOT-23 package; I_D = 2.6 A	Not a drop-in replacement: lower current rating and higher R_DS(on); suited only for sub-3 A loads	Consider only for ultra-low-cost, low-power auxiliary rails where thermal and current demands are minimal

Compared with IRLR3702TRPBF and SI2302DS-T1-GE3, the IRLR3802TRPBF delivers superior power density (84 A/8.5 mΩ in D-Pak) and optimized gate charge for high-frequency PoL use - making it the preferred choice for 12 V input, >10 A synchronous buck stages requiring thermal headroom and avalanche ruggedness.

Availability

IRLR3802TRPBF is available at Aetrix Electronics and suitable for server VRMs, laptop CPU regulators, network equipment PoL modules, and portable SSD power rails requiring stable component supply and long-term industrial availability.

Supply support for IRLR3802TRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader specializing in power management, automotive, and industrial control solutions, with deep expertise in silicon MOSFET design and manufacturing.

The IRLR3802TRPBF belongs to Infineon's legacy HEXFET logic-level MOSFET product line, engineered specifically for high-efficiency, high-current DC/DC conversion in computing and communications infrastructure where low-voltage gate drive and thermal performance are critical.

FAQ

Is IRLR3802TRPBF suitable for 3.3 V gate drive?

Yes - its gate threshold voltage (0.6–1.9 V) and guaranteed R_DS(on) at V_GS = 3.3 V (12 mΩ max, per IR application note AN-1044) ensure reliable enhancement-mode operation with 3.3 V logic drivers. Full 84 A current capability requires V_GS ≥ 4.5 V per datasheet specifications.

What is the maximum recommended PCB copper area for thermal relief?

Infineon recommends ≥1.0 in² (645 mm²) of 2-oz copper connected to the D-Pak drain pad via ≥4 thermal vias (0.3 mm diameter, filled or plated) to achieve the rated R_θJA = 40 °C/W. Smaller areas increase junction temperature proportionally - e.g., 0.5 in² raises R_θJA to ~65 °C/W.

Does IRLR3802TRPBF have integrated ESD protection?

No - the device lacks on-chip ESD protection diodes. Per IRF application notes, external gate protection (e.g., 10 Ω series resistor + 12 V Zener clamp to source) is required for handling and board-level ESD immunity per IEC 61000-4-2 Level 4 (8 kV contact).

Can IRLR3802TRPBF replace IRLR3802PbF in existing designs?

Yes - IRLR3802TRPBF is the tape-and-reel packaging variant of the same die and construction as IRLR3802PbF. Both share identical electrical specs, thermal ratings, and RoHS-compliant lead-free finish; only packaging format (reel vs. tube) differs per ordering code.

IRLR3802TRPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 12 V

Current - Continuous Drain (Id) @ 25°C:: 84A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 2.8V, 4.5V

Rds On (Max) @ Id, Vgs:: 8.5mOhm @ 15A, 4.5V

Vgs(th) (Max) @ Id:: 1.9V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 41 nC @ 5 V

Vgs (Max):: ±12V

Input Capacitance (Ciss) (Max) @ Vds:: 2490 pF @ 6 V

FET Feature:: -

Power Dissipation (Max):: 88W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-252AA (DPAK)

IRLR3802TRPBF FAQ

1.How can I place an order for IRLR3802TRPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRLR3802TRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRLR3802TRPBF reliable?

The price and inventory of IRLR3802TRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRLR3802TRPBF is usually 5 days.

3.What payment methods are accepted for IRLR3802TRPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRLR3802TRPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRLR3802TRPBF?

IRLR3802TRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRLR3802TRPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRLR3802TRPBF?

For technical support, including IRLR3802TRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRLR3802TRPBF requirements.

6.How does Aetrix verify that IRLR3802TRPBF is sourced from the original manufacturer or authorized distributors?

All IRLR3802TRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRLR3802TRPBF meets industry standards.

7.What is the process for return or replacement of IRLR3802TRPBF?

All IRLR3802TRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRLR3802TRPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRLR3802TRPBF part is unused and in its original packaging.

Return procedure for IRLR3802TRPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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