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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRLR4343-701PBF

Name: IRLR4343-701PBF
Brand: Infineon Technologies
SKU: IRLR4343-701PBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRLR4343-701PBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-252-4, DPAK (3 Leads + Tab)

Datasheet:: IRLR4343-701PBF.pdf

Description:: MOSFET N-CH 55V 26A IPAK

Quantity:: RFQ Add To RFQ list

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Inventory:7,088

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Product details

Overview

IRLR4343-701PBF from Infineon Technologies (formerly International Rectifier) is a 55 V, 26 A N-channel D-Pak MOSFET optimized for Class-D audio amplifier output stages. It delivers 42 mΩ R_DS(on) at V_GS = 10 V, 28 nC total gate charge, and 175°C maximum junction temperature, enabling high-efficiency switching with low THD and EMI in compact audio power modules.

For engineers reviewing the IRLR4343-701PBF datasheet, IRLR4343-701PBF pinout, IRLR4343-701PBF application, or IRLR4343-701PBF equivalent, this device is selected for its low Q_rr (100–150 nC), fast switching (t_r = 19 ns, t_f = 5.3 ns), and robust repetitive avalanche capability-critical for unclamped inductive load handling in bridge-tied load (BTL) amplifiers.

Technical Context

This MOSFET employs advanced HEXFET® process technology to minimize conduction and switching losses simultaneously. Its low Q_g/Q_sw ratio and optimized body diode reverse recovery (Q_rr = 100–150 nC, t_rr = 52–78 ns) directly suppress harmonic distortion and high-frequency EMI generation in Class-D modulation schemes.

The device features a thermally enhanced D-Pak (TO-252AA) package with dual drain leads for reduced source inductance (L_S = 7.5 nH) and improved current sharing. Its 175°C T_J(max) and validated repetitive avalanche rating (E_AR = 160 mJ at T_J = 25°C) support reliable operation under transient overloads and short-circuit conditions typical in audio output stages.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	55 V - Withstands rail voltages up to ±28 V in BTL configurations with margin for voltage spikes.
R_DS(on) @ 10 V	42 mΩ typ. - Enables ≤1.2 W conduction loss at 19 A DC, critical for thermal management in sealed enclosures.
Q_g	28 nC typ. - Reduces gate drive power and allows use of lower-current, cost-effective gate drivers.
Q_rr	100–150 nC - Minimizes body-diode commutation loss and associated THD degradation during dead-time transitions.
T_J(max)	175°C - Supports sustained operation in high ambient environments (e.g., automotive infotainment, powered speakers).
E_AS	160 mJ - Absorbs single-pulse inductive energy without failure, enhancing system-level fault tolerance.

Pinout & Package

D-Pak (TO-252AA) package with exposed drain pad for thermal conduction to PCB copper; 4-pin configuration with dual drain terminals (pins 2 and 4) to reduce loop inductance and improve current distribution.

Pin/Terminal	Circuit Role	Design Meaning
1	Gate	Control input requiring <10 V threshold (V_GS(th) = 1.0–2.0 V); low input capacitance (C_iss = 740 pF) eases driver selection.
2	Drain	Main high-side current path; electrically tied to pin 4 and thermal pad for low-inductance power routing.
3	Source	Reference node for gate drive and current sensing; internal inductance LS = 7.5 nH impacts switching waveform fidelity.
4	Drain	Secondary drain connection-used in parallel with pin 2 to halve effective drain-source loop inductance in high-dI/dt applications.

Key Features

Feature	Design Value
Low Q_rr + fast t_rr	100–150 nC / 52–78 ns - Directly reduces crossover distortion and EMI in Class-D half-bridge legs.
Optimized gate charge profile	Q_gd/Q_g = 34% - Improves Miller immunity and enables stable 300–500 kHz switching without oscillation.
Repetitive avalanche rated	E_AR = 160 mJ @ 25°C - Eliminates need for external snubbers in speaker protection circuits.
High-temperature ruggedness	175°C T_J(max) with linear derating - Allows full-rated current at 100°C case temperature (39 A derated to 26 A).

Applications

Home Audio Amplifiers

Automotive Infotainment Systems

Use Scenario: High-power stereo amplifiers in soundbars and AV receivers delivering >100 W per channel into 4 Ω loads.

IC Role / Device Role / Timing Role: Output stage switch in half-bridge topology operating at 350 kHz PWM frequency with <1 µs dead time.

Use Value: 42 mΩ R_DS(on) and 28 nC Q_g enable ≥92% efficiency at full power, reducing heatsink size by 35% versus legacy MOSFETs.

Use Scenario: Compact Class-D subwoofer amplifiers integrated into vehicle dashboards with limited airflow.

IC Role / Device Role / Timing Role: High-side switch in BTL configuration driving 2–4 Ω speakers with peak currents >40 A.

Use Value: 175°C T_J(max) and 160 mJ E_AS ensure survival during load dump transients and thermal cycling without derating.

Professional PA Modules

Powered Studio Monitors

Use Scenario: Rack-mountable 2-channel amplifiers for live sound reinforcement with digital signal processing and real-time protection.

IC Role / Device Role / Timing Role: Final output switch handling 50–100 V_PP rail swings and 100+ A pulsed currents.

Use Value: Dual drain pins (2 & 4) reduce parasitic inductance by 40%, suppressing voltage overshoot during turn-off and preventing shoot-through.

Use Scenario: Near-field studio monitors requiring ultra-low noise floor (<−110 dB THD+N) and zero audible switching artifacts.

IC Role / Device Role / Timing Role: Low-noise output stage synchronized to DSP clock with precise dead-time control.

Use Value: Low Q_rr (100 nC) and tight V_GS(th) distribution (1.0–2.0 V) minimize dead-time-induced distortion and enable <0.005% THD at 1 kHz.

Equivalent & Alternatives

The following parts are listed as comparable options for similar Class-D audio MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP55NF06L	60 V V_DS, 55 A I_D, R_DS(on) = 14 mΩ @ 10 V, Q_g = 65 nC, no specified Q_rr	Higher current rating but larger gate charge increases driver complexity and switching loss at >300 kHz	Preferable only when higher continuous current (>30 A) is required and switching frequency ≤200 kHz.
IRF540N	100 V V_DS, 33 A I_D, R_DS(on) = 44 mΩ @ 10 V, Q_g = 71 nC, Q_rr = 220 nC	Higher voltage rating trades off higher Q_rr and slower switching, increasing THD and EMI in audio band	Only suitable for legacy designs where board layout cannot accommodate newer low-Q_rr devices.

Compared with STP55NF06L and IRF540N, the IRLR4343-701PBF provides optimal balance of low R_DS(on), minimal Q_rr, and moderate Q_g-enabling clean, efficient Class-D operation at 300–500 kHz without compromising thermal or acoustic performance.

Availability

IRLR4343-701PBF is available at Aetrix Electronics and suitable for home audio amplifiers, automotive infotainment systems, and professional PA modules requiring stable component supply across multi-year production cycles.

Supply support for IRLR4343-701PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader specializing in power management, sensor, and automotive ICs, with deep expertise in silicon-based power devices.

This MOSFET belongs to Infineon's HEXFET® Power MOSFET product line, engineered specifically for high-efficiency, high-reliability switching in audio, motor control, and DC-DC conversion applications.

FAQ

What is the maximum continuous drain current for IRLR4343-701PBF at 100°C case temperature?

The maximum continuous drain current is 39 A at T_C = 25°C and derates linearly to 26 A at T_C = 100°C, based on the 0.53 W/°C thermal derating factor and R_θJC = 1.9°C/W. This reflects real-world thermal limits in PCB-mounted D-Pak layouts with 1-in² 2-oz copper.

Does IRLR4343-701PBF support logic-level gate drive?

No-it is not a logic-level MOSFET. Its gate threshold voltage ranges from 1.0 V to 2.0 V, but full enhancement requires V_GS ≥ 10 V to achieve the specified 42 mΩ R_DS(on). Driving it with 3.3 V or 5 V will result in significantly higher on-resistance (57 mΩ at 4.5 V) and excessive conduction loss.

How does the dual-drain pin configuration improve performance in Class-D amplifiers?

The dual drain pins (2 and 4) reduce total source-drain loop inductance by distributing high di/dt current paths. Measured internal source inductance is 7.5 nH; using both drains cuts effective loop inductance by ~40%, suppressing voltage overshoot during turn-off and minimizing risk of shoot-through in half-bridge topologies.

Is repetitive avalanche capability tested and rated per JEDEC standards?

Yes-repetitive avalanche energy (E_AR) is characterized per JEDEC JESD24-11 and validated across temperature (25–175°C). At T_J = 25°C, E_AR = 160 mJ; it decreases to 40 mJ at T_J = 175°C. The device is qualified for unlimited repetitive avalanche events as long as T_J remains within spec and pulse duty cycle is controlled.

IRLR4343-701PBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-252-4, DPAK (3 Leads + Tab)

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 55 V

Current - Continuous Drain (Id) @ 25°C:: 26A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 50mOhm @ 4.7A, 10V

Vgs(th) (Max) @ Id:: 1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 42 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 740 pF @ 50 V

FET Feature:: -

Power Dissipation (Max):: 79W (Tc)

Operating Temperature:: -40°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: I-PAK (LF701)

IRLR4343-701PBF FAQ

1.How can I place an order for IRLR4343-701PBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRLR4343-701PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRLR4343-701PBF reliable?

The price and inventory of IRLR4343-701PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRLR4343-701PBF is usually 5 days.

3.What payment methods are accepted for IRLR4343-701PBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRLR4343-701PBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRLR4343-701PBF?

IRLR4343-701PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRLR4343-701PBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRLR4343-701PBF?

For technical support, including IRLR4343-701PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRLR4343-701PBF requirements.

6.How does Aetrix verify that IRLR4343-701PBF is sourced from the original manufacturer or authorized distributors?

All IRLR4343-701PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRLR4343-701PBF meets industry standards.

7.What is the process for return or replacement of IRLR4343-701PBF?

All IRLR4343-701PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRLR4343-701PBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRLR4343-701PBF part is unused and in its original packaging.

Return procedure for IRLR4343-701PBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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