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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRLR4343TR

Name: IRLR4343TR
Brand: Infineon Technologies
SKU: IRLR4343TR
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRLR4343TR

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: IRLR4343TR.pdf

Description:: MOSFET N-CH 55V 26A DPAK

Quantity:: RFQ Add To RFQ list

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Inventory:6,330

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Product details

Overview

IRLR4343TR from Infineon Technologies (formerly International Rectifier) is an N-channel enhancement-mode power MOSFET in D-Pak (TO-252AA) package, optimized for Class-D audio amplifier output stages. It delivers 55 V V_DS, 42 mΩ R_DS(on) @ 10 V V_GS, 28 nC total gate charge, 175°C maximum junction temperature, and repetitive avalanche capability - enabling high-efficiency, low-THD, low-EMI switching in compact audio amplifiers.

For engineers reviewing the IRLR4343TR datasheet, IRLR4343TR pinout, IRLR4343TR application, or IRLR4343TR equivalent, this device is selected for its low Q_rr (100–150 nC), fast switching (t_r = 19 ns, t_f = 5.3 ns), and robust thermal performance (R_θJC = 1.9°C/W) in high-frequency, high-current Class-D half-bridge configurations.

Technical Context

This MOSFET employs advanced HEXFET® process technology to minimize conduction and switching losses simultaneously. Its low Q_g/Q_gd ratio (28 nC / 9.5 nC) and optimized body diode (Q_rr = 100–150 nC, t_rr = 52–78 ns) reduce cross-conduction loss and voltage overshoot during hard commutation in bridge-tied load (BTL) topologies.

The device features a fully rated 175°C T_J operation with guaranteed repetitive avalanche energy (E_AR up to 160 mJ at 25°C), enabling reliable unclamped inductive switching in audio output stages without external snubbers. Its R_DS(on) exhibits only +0.5%/°C drift from 25°C to 125°C, supporting stable gain and thermal stability across ambient extremes.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	55 V - supports rail voltages up to ±25 V in BTL Class-D amplifiers with margin for transient spikes
R_DS(on) @ 10 V	42 mΩ typ. - enables ≤0.5 W conduction loss at 10 A output current, critical for thermal management in sealed enclosures
Q_g	28 nC typ. - reduces gate drive power and allows use of low-power gate drivers (e.g., IRS2092S) without buffering
Q_rr	100–150 nC - minimizes body-diode recovery-induced THD and EMI in high-frequency PWM (>300 kHz) operation
T_J max	175°C - permits sustained operation under high ambient temperatures (e.g., automotive cabin, powered speaker cabinets)
R_θJC	1.9°C/W - enables direct heatsink mounting with <1.5°C/W total thermal path for 25 W dissipation in compact designs
t_r/t_f	19 ns / 5.3 ns - supports clean edge control and reduced switching loss at >500 kHz PWM frequencies

Pinout & Package

IRLR4343TR is housed in a surface-mount D-Pak (TO-252AA) package with exposed drain pad for thermal and electrical connection. The package conforms to JEDEC outline TO-252AA and features gull-wing leads compatible with standard reflow processes.

Pin/Terminal	Circuit Role	Design Meaning
1 - Gate	Control input	Low-threshold (V_GS(th) = 1.0–2.0 V) input requiring minimal drive strength; sensitive to ESD but compatible with 3.3 V/5 V logic-level controllers
2 - Drain	High-side switch node	Internally connected to exposed metal tab - must be electrically isolated from heatsink unless referenced to same potential; carries full load current and switching transients
3 - Source	Power return / reference	Common return path for gate drive and load current; low-inductance layout essential to suppress shoot-through and ringing
4 - Drain	Redundant drain connection	Dual-drain configuration improves current sharing and thermal spreading; both pins must be soldered to PCB copper pour or heatsink

Key Features

Feature	Design Value
Optimized for Class-D audio	Q_gd/Q_g ratio of 0.34 ensures controlled Miller plateau transition and reduced risk of false turn-on in half-bridge layouts
Low Q_rr body diode	100–150 nC reverse recovery charge enables clean zero-voltage switching (ZVS) transitions and eliminates need for external Schottky catch diodes
Repetitive avalanche rated	Guaranteed E_AR = 160 mJ at 25°C allows safe operation during overcurrent or short-circuit events without derating or protection circuitry
175°C junction rating	Enables continuous operation at case temperatures up to 100°C with 75°C safety margin, eliminating thermal shutdown in passive-cooled speaker modules

Applications

Home Audio Amplifiers

Automotive Infotainment Systems

Use Scenario: Compact stereo amplifier modules delivering 50–100 W per channel into 4 Ω loads using BTL topology.

IC Role / Device Role / Timing Role: Output stage switching device in half-bridge configuration; operates at 300–500 kHz PWM frequency with precise dead-time control.

Use Value: Low R_DS(on) and Q_g reduce heat generation and driver complexity, enabling fanless aluminum chassis designs with <0.05% THD+N at full power.

Use Scenario: OEM head unit power amplifiers integrated into dashboard electronics with strict space and thermal constraints.

IC Role / Device Role / Timing Role: High-side switch in dual-channel Class-D output stage; handles 12 V battery supply with load dump immunity up to 40 V.

Use Value: 175°C T_J rating and repetitive avalanche capability eliminate thermal throttling during extended bass-heavy playback in hot vehicle cabins (≥85°C ambient).

Powered Studio Monitors

Portable Bluetooth Speakers

Use Scenario: Active near-field monitors with dual 3-inch woofers and digital signal processing, requiring low-noise, high-fidelity amplification.

IC Role / Device Role / Timing Role: Primary output MOSFET in discrete Class-D amplifier stage; paired with complementary device for push-pull operation.

Use Value: Ultra-low Q_rr and tight R_DS(on) tolerance (±15%) ensure matched channel performance and <−95 dB SNR across 20 Hz–20 kHz bandwidth.

Use Scenario: Battery-powered smart speakers with integrated DAC, DSP, and 10–20 W RMS output into 8 Ω drivers.

IC Role / Device Role / Timing Role: Efficient switching element in single-ended Class-D output stage; driven by integrated controller with adaptive dead-time adjustment.

Use Value: 42 mΩ R_DS(on) at 10 V and low Q_g extend battery life by reducing conduction and switching losses, achieving >85% system efficiency at 15 W output.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRFZ44NPBF	R_DS(on) = 28 mΩ @ 10 V (lower), Q_g = 67 nC (higher), T_J max = 175°C, no Q_rr spec	Higher gate drive demand increases controller stress; less suitable for high-frequency Class-D due to slower switching (t_r = 60 ns)	Prefer when lower conduction loss dominates design and switching frequency ≤150 kHz
STP55NF06L	R_DS(on) = 14 mΩ @ 10 V, Q_g = 65 nC, Q_rr = 220 nC, T_J max = 175°C, TO-220 package	Larger package increases board area and thermal resistance (R_θJC = 2.5°C/W); higher Q_rr degrades THD above 250 kHz	Choose for cost-sensitive industrial amplifiers where size and EMI are secondary to raw power handling

Compared with IRFZ44NPBF and STP55NF06L, IRLR4343TR uniquely balances low Q_g, low Q_rr, and D-Pak thermal performance - making it the optimal choice for space-constrained, high-fidelity Class-D audio where THD, EMI, and thermal density are co-optimized.

Availability

IRLR4343TR is available at Aetrix Electronics and suitable for home audio amplifiers, automotive infotainment systems, and powered studio monitors requiring stable component supply and long-term production continuity.

Supply support for IRLR4343TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader specializing in power management, sensor, and automotive ICs, with deep heritage in power MOSFET innovation through its acquisition of International Rectifier.

The HEXFET® product line - including IRLR4343TR - was engineered specifically for high-efficiency, high-reliability switching in audio, motor control, and DC-DC conversion, emphasizing low-loss parameters and ruggedness under dynamic load conditions.

FAQ

Is IRLR4343TR logic-level compatible with 3.3 V microcontrollers?

Yes. With a gate threshold voltage V_GS(th) of 1.0–2.0 V and guaranteed R_DS(on) of 57 mΩ at V_GS = 4.5 V, IRLR4343TR fully turns on using standard 3.3 V GPIO outputs. However, for lowest conduction loss (42 mΩ), a 10 V gate drive is recommended - achievable via simple charge-pump or level-shift circuitry.

What is the maximum continuous drain current at 100°C case temperature?

The datasheet specifies I_D = 39 A at T_C = 25°C and I_D = 26 A at T_C = 100°C, both at V_GS = 10 V. This derating reflects thermal limits of the D-Pak package; actual usable current depends on PCB copper area, heatsinking, and ambient airflow - typical designs sustain 20–25 A continuously at 100°C case with 2 oz copper and 20 mm² thermal pad.

Does IRLR4343TR require external gate resistors in Class-D applications?

Yes - a 2.5 Ω gate resistor is specified in the datasheet for switching time characterization (t_d(on), t_r, etc.). This value damps gate oscillation, controls dv/dt to limit EMI, and prevents shoot-through in half-bridge configurations. Lower values increase switching speed but risk ringing; higher values degrade efficiency and THD.

How does the repetitive avalanche rating impact real-world reliability?

The guaranteed E_AR = 160 mJ at 25°C and validated avalanche capability up to 175°C junction temperature allow IRLR4343TR to survive repeated inductive turn-off events - such as speaker cable shorts or clipped PWM waveforms - without degradation. This eliminates need for external clamping circuits in consumer audio designs, improving BOM simplicity and long-term field reliability.

IRLR4343TR Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 55 V

Current - Continuous Drain (Id) @ 25°C:: 26A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 50mOhm @ 4.7A, 10V

Vgs(th) (Max) @ Id:: 1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 42 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 740 pF @ 50 V

FET Feature:: -

Power Dissipation (Max):: 79W (Tc)

Operating Temperature:: -40°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-252AA (DPAK)

IRLR4343TR FAQ

1.How can I place an order for IRLR4343TR through Aetrix?

Please submit a Request for Quotation (RFQ) for IRLR4343TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRLR4343TR reliable?

The price and inventory of IRLR4343TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRLR4343TR is usually 5 days.

3.What payment methods are accepted for IRLR4343TR?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRLR4343TR transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRLR4343TR?

IRLR4343TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRLR4343TR order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRLR4343TR?

For technical support, including IRLR4343TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRLR4343TR requirements.

6.How does Aetrix verify that IRLR4343TR is sourced from the original manufacturer or authorized distributors?

All IRLR4343TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRLR4343TR meets industry standards.

7.What is the process for return or replacement of IRLR4343TR?

All IRLR4343TR units undergo pre-shipment inspection (PSI). If there is an issue with IRLR4343TR, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRLR4343TR part is unused and in its original packaging.

Return procedure for IRLR4343TR:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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