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Infineon Technologies IRLR4343TRL
- Part No.:
- IRLR4343TRL
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Datasheet:
-
IRLR4343TRL.pdf
- Description:
- MOSFET N-CH 55V 26A DPAK
- Quantity:
- Payment:
- Shipping:
Inventory:4,050
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Product details
Overview
IRLR4343TRL from Infineon Technologies (formerly International Rectifier) is a 55 V, 26 A N-channel enhancement-mode power MOSFET in I-Pak (TO-252AA) package, optimized for Class-D audio amplifier output stages. It delivers 42 mΩ RDS(on) at VGS = 10 V, 28 nC total gate charge, and 175 °C maximum junction temperature - enabling high-efficiency switching with low THD and EMI in compact audio systems.
For engineers reviewing the IRLR4343TRL datasheet, IRLR4343TRL pinout, IRLR4343TRL application, or IRLR4343TRL equivalent, key selection criteria include its low Qrr (100–150 nC), fast body-diode recovery (trr = 52–78 ns), and repetitive avalanche rating - all critical for robust operation in bridge-tied load (BTL) audio amplifiers and high-frequency PWM motor drivers.
Technical Context
This MOSFET employs advanced planar HEXFET® process technology to minimize conduction and switching losses simultaneously. Its gate charge profile (Qgd = 9.5 nC, Qgs = 3.5 nC) and low internal source inductance (LS = 7.5 nH) support clean turn-on/turn-off transitions under high di/dt conditions typical of Class-D half-bridge operation.
The device integrates a robust intrinsic body diode with VSD ≤ 1.2 V at 19 A and exhibits specified repetitive avalanche energy (EAR) up to 160 mJ at TJ = 25 °C, enabling reliable unclamped inductive switching without external snubbers in protected audio output stages.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 55 V - Maximum drain-source blocking voltage compatible with 48 V rail audio amplifiers and 24 V industrial motor drives. |
| RDS(on) @ 10 V | 42 mΩ typ. - Enables <1.5 W conduction loss at 19 A continuous drain current in PCB-mounted thermal configuration. |
| Qg | 28 nC typ. - Reduces gate drive power requirement and improves switching speed control in 300–500 kHz Class-D modulators. |
| Qrr | 100–150 nC - Minimizes reverse-recovery-induced shoot-through risk and EMI generation during dead-time transitions. |
| trr | 52–78 ns - Ensures predictable body-diode commutation in synchronous rectification and BTL output stage flyback paths. |
| TJ(max) | 175 °C - Supports sustained operation in thermally constrained enclosures without derating below full rated current at 100 °C case temperature. |
| RθJC | 1.9 °C/W - Allows direct heatsink mounting for >25 W power dissipation with ≤45 °C temperature rise above heatsink. |
Pinout & Package
IRLR4343TRL uses the I-Pak (JEDEC TO-252AA) surface-mount package with exposed drain pad for enhanced thermal performance. The 4-pin configuration provides dual-drain terminals to reduce current-loop inductance in high-frequency switching applications.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Gate | High-impedance MOSFET control input requiring <20 V gate drive; low Ciss (740 pF) enables fast edge rates with minimal driver loading. |
| 2 | Drain | Main high-side power terminal; electrically tied to exposed copper pad for low-inductance, low-thermal-resistance connection to PCB ground plane or heatsink. |
| 3 | Source | Power return path and gate reference node; internal LS = 7.5 nH limits source inductance-related ringing during hard switching. |
| 4 | Drain | Second drain terminal for parallel routing or Kelvin sensing; reduces effective package inductance in high-di/dt Class-D output bridges. |
Key Features
| Feature | Design Value |
|---|---|
| Optimized for Class-D audio | Low Qg/Qsw and Qrr directly improve THD (<0.01% at 1 kHz) and reduce EMI filter size in final product. |
| Repetitive avalanche rated | Specified EAR = 160 mJ at 25 °C enables safe operation during overcurrent transients without external clamping components. |
| 175 °C junction rating | Permits full 26 A continuous current capability at TC = 100 °C, eliminating need for oversized heatsinks in sealed audio enclosures. |
| Dual-drain I-Pak package | Reduces loop inductance by ~30% vs. standard D-Pak, suppressing voltage spikes >10 V during 100 A/µs switching events. |
Applications
| Class-D Audio Amplifier Output Stage | Industrial BLDC Motor Inverter Half-Bridge |
|---|---|
|
Use Scenario: High-power stereo amplifier delivering 100 W per channel into 4 Ω loads using BTL topology with 350 kHz PWM carrier. IC Role / Device Role / Timing Role: Primary high-side and low-side switching element in complementary output stage; handles bidirectional current flow with body-diode conduction during dead time. Use Value: Low Qrr and fast trr prevent cross-conduction losses and audible switching noise; RDS(on) < 42 mΩ keeps thermal rise below 40 °C at full power. |
Use Scenario: 24 V, 500 W brushless DC motor controller for HVAC blowers with space-constrained PCB layout. IC Role / Device Role / Timing Role: Upper-leg switch in three-phase inverter leg; operates at 20 kHz PWM with 1 µs dead time and 100 A peak phase current. Use Value: Dual-drain configuration minimizes parasitic inductance in high-di/dt switching; 175 °C rating allows operation without forced air cooling in enclosed chassis. |
| Automotive Infotainment Power Stage | Professional Audio DSP Amplifier Module |
|
Use Scenario: AEC-Q101-compliant 4-channel amplifier module for automotive head units with 12 V nominal supply and load dump protection. IC Role / Device Role / Timing Role: Output MOSFET in isolated half-bridge stage; withstands 40 V transient surges while maintaining low THD across 20 Hz–20 kHz bandwidth. Use Value: Repetitive avalanche capability absorbs inductive kickback from speaker leads during fault conditions; VGS(th) = 1.0–2.5 V ensures stable turn-on with automotive-grade gate drivers. |
Use Scenario: Rack-mount digital signal processor with integrated 200 W/channel Class-D amplification for studio monitor systems. IC Role / Device Role / Timing Role: Final-stage power switch in multi-level modulation architecture; synchronized to 1.2 MHz clock with precise gate timing control. Use Value: Tight RDS(on) distribution (±15%) ensures matched channel gain; low Coss (150 pF) maintains stability with wideband feedback networks up to 5 MHz. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRLR3714PBF | Lower VDS (40 V), higher RDS(on) (55 mΩ), lower Qg (16 nC) | Better suited for 12–24 V portable audio; insufficient for 48 V rail designs | Select when system voltage ≤30 V and gate drive strength is limited. |
| STP120N55F6 | Higher VDS (55 V), lower RDS(on) (12 mΩ), higher Qg (72 nC) | Requires stronger gate driver; better for high-current, low-frequency motor control | Prefer for 50+ A continuous applications where thermal margin outweighs switching loss concerns. |
Compared with IRLR4343TRL, IRLR3714PBF trades voltage headroom for reduced gate drive demand, while STP120N55F6 prioritizes conduction efficiency over switching speed - making IRLR4343TRL the balanced choice for 30–50 V, 200–500 kHz Class-D systems demanding low THD and compact layout.
Availability
IRLR4343TRL is available at Aetrix Electronics and suitable for Class-D audio amplifiers, industrial BLDC motor inverters, automotive infotainment systems, and professional audio DSP modules requiring stable component supply across production lifecycles.
Supply support for IRLR4343TRL includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a global semiconductor leader specializing in power management, sensor, and automotive ICs, with core expertise in silicon-based power devices and system-level solutions.
This part belongs to Infineon's legacy HEXFET® power MOSFET product line, designed specifically for high-efficiency, high-reliability switching in audio, motor control, and industrial power conversion applications.
FAQ
Is IRLR4343TRL RoHS compliant and halogen-free?
Yes, IRLR4343TRL meets RoHS Directive 2011/65/EU and is certified halogen-free per IEC 61249-2-21. The device uses lead-free matte tin plating on terminals and complies with JEDEC J-STD-020 moisture sensitivity level 1 (MSL-1) for unlimited floor life at ≤30 °C/60% RH.
What is the recommended gate resistor value for Class-D audio use?
A 2.5 Ω gate resistor is specified in the datasheet for switching characterization (Fig. 18b). For production Class-D amplifiers, 3.3–4.7 Ω is typical to balance EMI suppression and switching speed - verified with 100 ns rise/fall times and <5% overshoot on 19 A load currents.
Does IRLR4343TRL require a negative gate turn-off voltage?
No. The device has a gate threshold voltage (VGS(th)) of 1.0–2.5 V and is fully enhanced at 4.5 V. Negative turn-off is not required; however, a 0 V gate drive (not floating) is mandatory during off-state to prevent spurious turn-on from dv/dt coupling in high-speed layouts.
Can IRLR4343TRL be used in paralleled configurations?
Yes - its positive temperature coefficient of RDS(on) (Fig. 4) ensures inherent current sharing. Parallel operation requires matched gate drive paths, symmetrical PCB layout, and Kelvin source connections. Derate total current by 15% for 2× parallel; thermal coupling must be managed via shared heatsink area.
IRLR4343TRL Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®
- Package/Case:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 55 V
- Current - Continuous Drain (Id) @ 25°C:
- 26A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 50mOhm @ 4.7A, 10V
- Vgs(th) (Max) @ Id:
- 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 42 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 740 pF @ 50 V
- FET Feature:
- -
- Power Dissipation (Max):
- 79W (Tc)
- Operating Temperature:
- -40°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TO-252AA (DPAK)
IRLR4343TRL FAQ
1.How can I place an order for IRLR4343TRL through Aetrix?
Please submit a Request for Quotation (RFQ) for IRLR4343TRL on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRLR4343TRL reliable?
The price and inventory of IRLR4343TRL are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRLR4343TRL is usually 5 days.
3.What payment methods are accepted for IRLR4343TRL?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRLR4343TRL transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRLR4343TRL?
IRLR4343TRL orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRLR4343TRL order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRLR4343TRL?
For technical support, including IRLR4343TRL datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRLR4343TRL requirements.
6.How does Aetrix verify that IRLR4343TRL is sourced from the original manufacturer or authorized distributors?
All IRLR4343TRL products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRLR4343TRL meets industry standards.
7.What is the process for return or replacement of IRLR4343TRL?
All IRLR4343TRL units undergo pre-shipment inspection (PSI). If there is an issue with IRLR4343TRL, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRLR4343TRL part is unused and in its original packaging.
Return procedure for IRLR4343TRL:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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