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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRLR4343TRPBF

Name: IRLR4343TRPBF
Brand: Infineon Technologies
SKU: IRLR4343TRPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRLR4343TRPBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: IRLR4343TRPBF.pdf

Description:: MOSFET N-CH 55V 26A DPAK

Quantity:: RFQ Add To RFQ list

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Inventory:3,041

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Product details

Overview

IRLR4343TRPBF from Infineon Technologies (formerly International Rectifier) is a 55 V, 26 A N-channel enhancement-mode MOSFET in I-Pak (TO-251AA) package, optimized for Class-D audio amplifier output stages. It delivers 42 mΩ R_DS(on) at V_GS = 10 V, 28 nC total gate charge, and 175°C maximum junction temperature, enabling high-efficiency switching with low THD and EMI in compact audio power stages.

For engineers reviewing the IRLR4343TRPBF datasheet, IRLR4343TRPBF pinout, IRLR4343TRPBF application, or IRLR4343TRPBF equivalent, key selection criteria include R_DS(on) @ 4.5 V (57 mΩ), Q_rr (100–150 nC), repetitive avalanche rating (160 mJ), thermal resistance R_θJC (1.9°C/W), and body diode reverse recovery time (52–78 ns).

Technical Context

This MOSFET employs advanced planar HEXFET® process technology to minimize conduction and switching losses simultaneously. Its low Q_g/Q_sw ratio and tightly controlled Q_rr reduce crossover distortion and voltage spikes during hard-switching transitions in half-bridge Class-D outputs.

The device integrates a robust body diode with 1.2 V forward voltage and 52 ns typical reverse recovery time, supporting synchronous rectification and unclamped inductive switching. Repetitive avalanche capability (E_AR = 140 mJ @ T_J = 25°C) enables reliable operation under transient overloads without external snubbers.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	55 V - Supports rail voltages up to ±27 V in bridged Class-D amplifiers with margin against transients.
R_DS(on) @ 10 V	42 mΩ - Enables <1.2 W conduction loss at 19 A DC current in high-power audio output stage.
R_DS(on) @ 4.5 V	57 mΩ - Ensures usable on-resistance with 5 V logic-level gate drive in microcontroller-based amplifier control.
Q_g	28 nC - Reduces gate driver power demand and switching transition time in 300–500 kHz PWM audio systems.
Q_rr	100–150 nC - Limits diode reverse recovery energy dissipation and associated EMI generation during dead-time commutation.
T_J max	175°C - Allows sustained operation in thermally constrained enclosures without derating below full rated current.
R_θJC	1.9°C/W - Enables direct heatsink mounting with minimal thermal interface resistance for efficient power dissipation.

Pinout & Package

IRLR4343TRPBF uses the I-Pak (TO-251AA) surface-mount package with three leads: Drain (tab), Source (lead 1), Gate (lead 2). The exposed drain tab provides low-inductance, low-thermal-resistance path to PCB copper pour or heatsink.

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	Main power output node	Electrically and thermally connected to PCB copper pour; carries full load current and dissipates heat directly to heatsink.
Source (Lead 1)	Reference node for gate drive and current sensing	Low-inductance return path for source current; used as common reference for gate driver and current feedback circuits.
Gate (Lead 2)	Control input for channel conduction	High-impedance input requiring <28 nC charge for full turn-on; sensitive to layout-induced ringing due to internal R_G.

Key Features

Feature	Design Value
Optimized Q_g/Q_sw ratio	Reduces switching loss and improves THD by minimizing overlap conduction during PWM transitions in Class-D output stages.
Low Q_rr body diode	100–150 nC reverse recovery charge suppresses voltage overshoot and EMI during dead-time commutation in half-bridge topologies.
175°C junction rating	Permits continuous operation at full current in sealed audio enclosures without forced air cooling or derating.
Repetitive avalanche capability	160 mJ single-pulse and 140 mJ repetitive avalanche energy enable robustness against inductive kickback without snubber networks.

Applications

Home Audio Amplifiers

Automotive Infotainment Systems

Use Scenario: High-fidelity Class-D amplifier modules delivering 100–300 W per channel into 4 Ω loads in compact AV receivers and soundbars.

IC Role / Device Role / Timing Role: Output power switch in half-bridge configuration, switching at 300–400 kHz with precise dead-time control.

Use Value: 42 mΩ R_DS(on) and 28 nC Q_g enable >90% efficiency at full power while maintaining THD+N <0.05%.

Use Scenario: Compact, thermally constrained Class-D amplifier in vehicle head units and rear-seat entertainment systems.

IC Role / Device Role / Timing Role: High-side/low-side switch in dual half-bridge topology driving 2–4 Ω speakers with supply rails up to 14.4 V.

Use Value: 175°C T_Jmax and 1.9°C/W R_θJC allow operation at 26 A continuous current without thermal throttling in non-ventilated dash environments.

Professional Audio Power Modules

Active Speaker Systems

Use Scenario: Multi-channel rack-mount amplifiers for live sound reinforcement, requiring high reliability and low thermal impedance.

IC Role / Device Role / Timing Role: Primary switching element in paralleled output stages handling peak currents >50 A with fast transient response.

Use Value: Repetitive avalanche rating (140 mJ) and 55 V V_DS withstand capability ensure survival during speaker cable short-circuits and clipping events.

Use Scenario: Integrated powered loudspeakers with built-in digital amplification, where board space and thermal management are critical.

IC Role / Device Role / Timing Role: Final-stage power switch in self-contained Class-D amplifier module mounted directly behind speaker drivers.

Use Value: I-Pak package enables direct thermal coupling to aluminum baffle plate, reducing system-level thermal resistance by >40% vs. D-Pak alternatives.

Equivalent & Alternatives

The following parts are listed as comparable options for similar MOSFET switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRLR3714TRPBF	Lower R_DS(on) (22 mΩ @ 10 V) but higher Q_g (42 nC); same I-Pak package and 175°C rating.	Better conduction efficiency at high current, but increased gate drive loss and slower switching in high-frequency Class-D designs.	Select when thermal design prioritizes conduction loss over switching loss, e.g., subwoofer channels operating <200 kHz.
STP16NF55	Higher V_DS (55 V same), higher R_DS(on) (60 mΩ @ 10 V), lower Q_rr (70 nC); TO-220 package, not surface-mount.	Reduced EMI due to lower Q_rr, but larger footprint and higher thermal resistance (R_θJC = 2.5°C/W) limit power density.	Choose for prototyping or low-volume designs where through-hole assembly and lower EMI outweigh size and thermal constraints.

Compared with IRLR3714TRPBF and STP16NF55, the IRLR4343TRPBF strikes a balanced trade-off between R_DS(on), Q_g, and Q_rr-making it optimal for mainstream Class-D audio where PCB area, thermal performance, and THD must all be concurrently optimized.

Availability

IRLR4343TRPBF is available at Aetrix Electronics and suitable for home audio amplifiers, automotive infotainment systems, and professional audio power modules requiring stable component supply and long-term production continuity.

Supply support for IRLR4343TRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader specializing in power management, sensor, and automotive ICs, with deep expertise in silicon and wide-bandgap power devices.

The IRLR4343TRPBF belongs to Infineon's HEXFET® Power MOSFET product line, engineered specifically for high-efficiency, high-reliability switching in audio power amplification and other demanding analog power applications.

FAQ

What is the maximum continuous drain current for IRLR4343TRPBF at 100°C case temperature?

The maximum continuous drain current is 13 A at T_C = 100°C with V_GS = 10 V, as specified in the Absolute Maximum Ratings table. This reflects thermal derating from the 26 A rating at 25°C case temperature, governed by the device's R_θJC of 1.9°C/W and power dissipation limits.

Does IRLR4343TRPBF support 5 V logic-level gate drive?

Yes - its gate threshold voltage (V_GS(th)) is 1.0–2.5 V, and R_DS(on) is specified at 57 mΩ with V_GS = 4.5 V. Full enhancement occurs at ≥4.5 V, making it compatible with standard 5 V microcontrollers and gate drivers without level-shifting circuitry.

How does the body diode performance impact Class-D amplifier design?

The body diode has V_SD = 1.2 V and t_rr = 52–78 ns, enabling clean commutation during dead-time intervals. Low Q_rr (100–150 nC) minimizes reverse recovery current spikes that cause shoot-through risk and EMI, directly improving THD and simplifying gate driver timing margins.

Is IRLR4343TRPBF RoHS-compliant and lead-free?

Yes - the "PBF" suffix confirms lead-free (Pb-free) construction per RoHS Directive 2011/65/EU. The device uses matte tin plating on leads and complies with JEDEC J-STD-020 moisture sensitivity level (MSL) 1, suitable for standard reflow soldering profiles.

IRLR4343TRPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 55 V

Current - Continuous Drain (Id) @ 25°C:: 26A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 50mOhm @ 4.7A, 10V

Vgs(th) (Max) @ Id:: 1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 42 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 740 pF @ 50 V

FET Feature:: -

Power Dissipation (Max):: 79W (Tc)

Operating Temperature:: -40°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-252AA (DPAK)

IRLR4343TRPBF FAQ

1.How can I place an order for IRLR4343TRPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRLR4343TRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRLR4343TRPBF reliable?

The price and inventory of IRLR4343TRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRLR4343TRPBF is usually 5 days.

3.What payment methods are accepted for IRLR4343TRPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRLR4343TRPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRLR4343TRPBF?

IRLR4343TRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRLR4343TRPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRLR4343TRPBF?

For technical support, including IRLR4343TRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRLR4343TRPBF requirements.

6.How does Aetrix verify that IRLR4343TRPBF is sourced from the original manufacturer or authorized distributors?

All IRLR4343TRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRLR4343TRPBF meets industry standards.

7.What is the process for return or replacement of IRLR4343TRPBF?

All IRLR4343TRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRLR4343TRPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRLR4343TRPBF part is unused and in its original packaging.

Return procedure for IRLR4343TRPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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