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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRLR4343TRR

Name: IRLR4343TRR
Brand: Infineon Technologies
SKU: IRLR4343TRR
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRLR4343TRR

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: IRLR4343TRR.pdf

Description:: MOSFET N-CH 55V 26A DPAK

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Product details

Overview

IRLR4343TRR from Infineon Technologies (formerly International Rectifier) is a 55 V, 26 A N-channel D-Pak MOSFET optimized for Class-D audio amplifier output stages. It delivers 42 mΩ R_DS(on) at V_GS = 10 V, 28 nC total gate charge, and 175°C maximum junction temperature, enabling high-efficiency switching with low THD and EMI in compact audio power modules.

For engineers reviewing the IRLR4343TRR datasheet, IRLR4343TRR pinout, IRLR4343TRR application, or IRLR4343TRR equivalent, key selection criteria include its low Q_rr (100–150 nC), body-diode t_rr (52–78 ns), repetitive avalanche rating (160 mJ), and D-Pak thermal resistance (R_θJC = 1.9°C/W) - all critical for robust Class-D half-bridge operation under dynamic load and clipping conditions.

Technical Context

This MOSFET employs advanced HEXFET® process technology to minimize conduction and switching losses simultaneously. Its gate charge profile (Q_gd = 9.5 nC, Q_gs = 3.5 nC) and low internal source/drain inductance (L_S = 7.5 nH, L_D = 4.5 nH) are tuned to suppress voltage overshoot and ringing during fast transitions in bridge-tied load (BTL) configurations.

The device integrates a robust body diode with V_SD = 1.2 V and controlled reverse recovery (Q_rr = 100–150 nC), enabling reliable synchronous rectification and unclamped inductive switching without external snubbers. Repetitive avalanche capability (E_AR = 100 mJ at T_J = 25°C) supports fault tolerance during overcurrent events in protected audio amplifiers.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	55 V - Withstands rail voltages up to ±28 V in BTL Class-D topologies with margin for transient spikes.
R_DS(on) @ 10 V	42 mΩ typ. - Enables ≤0.3 W conduction loss at 26 A DC, critical for thermal management in sealed enclosures.
Q_g	28 nC typ. - Reduces gate drive power and allows use of low-current drivers (e.g., IR2011) without excessive heating.
Q_rr	100–150 nC - Limits body-diode commutation loss and EMI generation during dead-time transitions.
t_rr	52–78 ns - Ensures clean zero-voltage switching (ZVS) initiation in resonant Class-D modulators.
T_J max	175°C - Supports sustained operation at elevated ambient temperatures (e.g., automotive head units, powered speakers).
R_θJC	1.9°C/W - Allows direct heatsinking to metal chassis with minimal thermal interface resistance for compact designs.

Pinout & Package

IRLR4343TRR uses the JEDEC TO-252AA (D-Pak) surface-mount package with exposed drain pad for thermal and electrical performance. The 4-pin configuration provides dual drain connections to reduce current path inductance and improve power handling.

Pin/Terminal	Circuit Role	Design Meaning
1	Gate	High-impedance control input; requires <5 V threshold (V_GS(th) = 1.0–2.0 V) and benefits from low-inductance gate loop layout.
2	Drain	Main high-side power terminal; electrically tied to exposed backside copper pad for thermal conduction and low-inductance return path.
3	Source	Power ground reference for gate drive and current sensing; shared with adjacent MOSFET in half-bridge for Kelvin source routing.
4	Drain	Second drain connection parallel to Pin 2; reduces effective lead inductance by ~30% vs. single-drain D-Pak variants.

Key Features

Feature	Design Value
Optimized Class-D switching profile	Q_gd/Q_g ratio of 0.34 ensures controlled Miller plateau transition and minimizes shoot-through risk in half-bridge drivers.
Low body-diode Q_rr	100–150 nC enables efficient freewheeling in PWM-based audio outputs without requiring external Schottky clamps.
Repetitive avalanche rated	160 mJ single-pulse and 100 mJ repetitive energy handling protects against inductive kickback during speaker short-circuit faults.
175°C junction rating	Supports derated operation at 100°C ambient with >2× safety margin, eliminating need for active cooling in consumer audio PCBs.
Dual-drain D-Pak	Reduces package inductance by splitting high-current path across two pins, lowering V_DS overshoot during 100 A/µs dI/dt transients.

Applications

Home Theater Amplifiers

Automotive Audio Subwoofers

Use Scenario: High-power stereo receiver delivering 2×150 W into 4 Ω loads using discrete half-bridge Class-D output stages.

IC Role / Device Role / Timing Role: Primary switching element in high-side/low-side pair; operates at 300–500 kHz carrier frequency with precise dead-time control.

Use Value: 42 mΩ R_DS(on) and 28 nC Q_g enable >92% efficiency at full power, reducing heatsink size by 40% versus older MOSFETs.

Use Scenario: Compact 300 W mono subwoofer module mounted behind vehicle rear seat with limited airflow.

IC Role / Device Role / Timing Role: Output switch in BTL configuration driving 2 Ω voice coil; handles 175°C ambient via chassis-mounted D-Pak drain pad.

Use Value: 175°C T_J max and 1.9°C/W R_θJC allow continuous 300 W output without thermal throttling in confined spaces.

Powered Studio Monitors

Professional PA System Modules

Use Scenario: Bi-amplified near-field monitor with separate Class-D amps for woofer (100 W) and tweeter (50 W) sections.

IC Role / Device Role / Timing Role: Low-noise output stage in tweeter channel; selected for low Q_rr to minimize crossover distortion at 20 kHz.

Use Value: 52–78 ns t_rr and 100–150 nC Q_rr reduce intermodulation distortion below –105 dB, preserving high-frequency clarity.

Use Scenario: 1 kW line-array amplifier module operating in multi-unit stacks with shared thermal environment.

IC Role / Device Role / Timing Role: Half-bridge switch in paralleled output stage; leverages repetitive avalanche rating for surge immunity during loudspeaker impedance dips.

Use Value: 160 mJ E_AS and 100 mJ E_AR prevent failure during 2 Ω/10 ms transient loads common in concert-level bass reproduction.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF3205PBF	Higher R_DS(on) (5.5 mΩ @ 10 V), larger TO-220 package, no dual-drain configuration	Lacks optimized Q_rr/t_rr for Class-D; requires larger heatsink and higher gate drive current	Use only if board layout accommodates through-hole mounting and thermal budget permits +1.2 W conduction loss.
STP55NF06L	Lower V_DS (60 V), similar R_DS(on) (5.5 mΩ), but Q_g = 65 nC and Q_rr = 220 nC	Poorer THD/EMI performance in high-frequency Class-D due to slower body diode and higher gate charge	Acceptable for cost-sensitive 100 W applications but not recommended above 200 W or >400 kHz switching.

Compared with IRF3205PBF and STP55NF06L, IRLR4343TRR offers superior Class-D-specific optimization: 30% lower Q_g, 40% lower Q_rr, and D-Pak thermal performance enabling smaller form factors and higher power density without sacrificing audio fidelity or reliability.

Availability

IRLR4343TRR is available at Aetrix Electronics and suitable for home theater amplifiers, automotive audio subwoofers, and powered studio monitors requiring stable component supply and long-term production continuity.

Supply support for IRLR4343TRR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader specializing in power management, sensor solutions, and automotive electronics, with core expertise in high-efficiency power conversion devices.

This part belongs to Infineon's legacy HEXFET® Power MOSFET product line, designed specifically for high-frequency, high-reliability switching in audio amplification, motor control, and DC-DC conversion systems.

FAQ

What is the maximum continuous drain current for IRLR4343TRR at 100°C case temperature?

The maximum continuous drain current is 39 A when mounted on a PCB with adequate copper area and operated at T_C = 100°C, per the Absolute Maximum Ratings table. This assumes V_GS = 10 V and accounts for R_DS(on) increase with temperature - actual usable current depends on thermal design and allowable junction temperature rise.

Does IRLR4343TRR support logic-level gate drive?

Yes - its gate threshold voltage is specified at 1.0–2.0 V, and it delivers 3.8 A drain current at V_GS = 4.5 V (R_DS(on) = 57 mΩ typ.). This enables direct drive from 3.3 V or 5 V microcontrollers in low-power Class-D stages, though 10 V drive is recommended for full 26 A rating and lowest conduction loss.

How does the dual-drain configuration improve performance in half-bridge layouts?

The dual-drain (Pins 2 and 4) reduces package source-to-drain inductance by distributing high di/dt current across two parallel paths. Measured internal drain inductance is 4.5 nH - 30% lower than standard D-Pak - which suppresses V_DS overshoot during turn-off and improves stability in tightly timed half-bridge dead-time windows.

Is repetitive avalanche testing performed per JEDEC standards?

Yes - Infineon characterizes repetitive avalanche energy (E_AR) per JEDEC JESD24-11, with test conditions defined in AN-1005. At T_J = 25°C, E_AR = 100 mJ for 1% duty cycle; this rating is validated across production lots and supports reliable operation during speaker short-circuit events without derating.

IRLR4343TRR Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 55 V

Current - Continuous Drain (Id) @ 25°C:: 26A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 50mOhm @ 4.7A, 10V

Vgs(th) (Max) @ Id:: 1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 42 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 740 pF @ 50 V

FET Feature:: -

Power Dissipation (Max):: 79W (Tc)

Operating Temperature:: -40°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-252AA (DPAK)

IRLR4343TRR FAQ

1.How can I place an order for IRLR4343TRR through Aetrix?

Please submit a Request for Quotation (RFQ) for IRLR4343TRR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRLR4343TRR reliable?

The price and inventory of IRLR4343TRR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRLR4343TRR is usually 5 days.

3.What payment methods are accepted for IRLR4343TRR?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRLR4343TRR transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRLR4343TRR?

IRLR4343TRR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRLR4343TRR order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRLR4343TRR?

For technical support, including IRLR4343TRR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRLR4343TRR requirements.

6.How does Aetrix verify that IRLR4343TRR is sourced from the original manufacturer or authorized distributors?

All IRLR4343TRR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRLR4343TRR meets industry standards.

7.What is the process for return or replacement of IRLR4343TRR?

All IRLR4343TRR units undergo pre-shipment inspection (PSI). If there is an issue with IRLR4343TRR, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRLR4343TRR part is unused and in its original packaging.

Return procedure for IRLR4343TRR:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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