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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRLR4343TRRPBF

Name: IRLR4343TRRPBF
Brand: Infineon Technologies
SKU: IRLR4343TRRPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRLR4343TRRPBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: IRLR4343TRRPBF.pdf

Description:: MOSFET N-CH 55V 26A DPAK

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Product details

Overview

IRLR4343TRRPBF from Infineon Technologies (formerly International Rectifier) is a 55 V, 26 A N-channel enhancement-mode power MOSFET in I-Pak (TO-251AA) package, optimized for Class-D audio amplifier output stages. It delivers 42 mΩ R_DS(on) at V_GS = 10 V, 28 nC total gate charge, and 100 nC reverse recovery charge, enabling high efficiency, low THD, and reduced EMI in compact audio systems.

For engineers reviewing the IRLR4343TRRPBF datasheet, IRLR4343TRRPBF pinout, IRLR4343TRRPBF application, or IRLR4343TRRPBF equivalent, key selection criteria include its 175°C junction rating, repetitive avalanche capability, low Q_rr, and I-Pak thermal performance - critical for high-reliability Class-D amplifier designs with tight layout constraints.

Technical Context

This MOSFET employs advanced planar HEXFET® process technology to minimize on-resistance per die area while tightly controlling gate charge distribution (Q_g = 28 nC typ., Q_gd = 9.5 nC) and body diode reverse recovery (Q_rr = 100 nC, t_rr = 52 ns). Its gate threshold voltage (V_GS(th) = 1.0–2.5 V) and negative temperature coefficient (−4.4 mV/°C) support stable switching across temperature.

The device features a robust internal structure enabling repetitive unclamped inductive switching up to 160 mJ at T_J = 25°C, with thermal resistance R_θJC = 1.9°C/W enabling high-power dissipation in PCB-mounted I-Pak configurations. Its 55 V V_DS rating and 19 A continuous drain current at T_C = 100°C suit mid-power audio output stages operating from 24–48 V rails.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	55 V - Supports Class-D amplifier operation up to 48 V DC bus with margin against transients.
R_DS(on) @ 10 V	42 mΩ - Enables <1.5 W conduction loss at 19 A, reducing heatsink requirements in sealed enclosures.
Q_g	28 nC - Low gate drive power demand allows use with standard gate drivers (e.g., IRS2092S) without external boost.
Q_rr	100 nC - Minimizes body-diode commutation loss and associated EMI in half-bridge output stage transitions.
T_J max	175°C - Permits sustained operation under high ambient conditions (e.g., automotive infotainment, powered speakers).
R_θJC	1.9°C/W - Enables >25 W power dissipation with modest heatsinking when mounted to copper pour via backside pad.
t_r/t_f	19 ns / 5.3 ns - Fast switching supports >300 kHz PWM frequencies, reducing filter component size in audio output LC networks.

Pinout & Package

I-Pak (TO-251AA) package: 3-pin surface-mount variant with exposed drain pad for thermal conduction; lead-free (PbF) finish; compatible with reflow soldering per J-STD-020.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Tab/Drain)	Drain (D)	Electrically connected to exposed metal tab - must be thermally and electrically tied to PCB ground plane or heatsink.
Pin 2 (Source)	Source (S)	Low-side reference node; connects to power ground return path and gate driver return; carries full load current.
Pin 3 (Gate)	Gate (G)	High-impedance control input; requires low-inductance routing and local 10 nF bypass to minimize ringing during fast dV/dt transitions.

Key Features

Feature	Design Value
Optimized Class-D parameters	Q_g/Q_sw and Q_rr tuned to reduce THD below 0.01% and suppress EMI peaks above 30 MHz in half-bridge amplifiers.
Repetitive avalanche rated	160 mJ single-pulse E_AS at 25°C enables reliable operation during speaker short-circuit or clipping events without derating.
175°C junction rating	Allows full-rated current delivery at case temperatures up to 100°C - eliminates need for thermal throttling in compact enclosures.
Low R_DS(on) × Q_g figure-of-merit	1.17 Ω·nC - Balances conduction and switching losses for peak efficiency (>95%) at 1 kHz–20 kHz audio bandwidth.

Applications

Powered Speakers

Automotive Infotainment

Use Scenario: 50–100 W stereo Class-D amplifier module in compact enclosure with limited airflow.

IC Role / Device Role / Timing Role: High-side/low-side output switch in half-bridge topology; switches at 300–500 kHz with dead-time control.

Use Value: 42 mΩ R_DS(on) and 1.9°C/W R_θJC enable 92% efficiency at full power without forced air cooling.

Use Scenario: OEM head unit with integrated 4×50 W Class-D amplifier driving door speakers.

IC Role / Device Role / Timing Role: Output stage MOSFET handling transient currents up to 80 A during bass transients.

Use Value: Repetitive avalanche rating ensures survival during speaker wire short circuits or impedance dips below 2 Ω.

Home Theater Receivers

Pro Audio Stage Monitors

Use Scenario: Multi-channel AV receiver delivering 100 W/channel into 8 Ω loads with THD+N < 0.02%.

IC Role / Device Role / Timing Role: Final power switch in feedback-stabilized PWM output stage; body diode conducts during dead time.

Use Value: 100 nC Q_rr and 52 ns t_rr minimize crossover distortion and high-frequency noise injection into analog signal paths.

Use Scenario: 200 W active stage monitor with DSP-based protection and real-time thermal monitoring.

IC Role / Device Role / Timing Role: High-current output switch subjected to frequent thermal cycling and mechanical vibration.

Use Value: 175°C T_J max and qualified lead-free I-Pak construction ensure long-term reliability under continuous 85°C ambient operation.

Equivalent & Alternatives

The following parts are listed as comparable options for similar Class-D audio amplifier applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRLR3803TRLPBF	Lower V_DS (30 V), higher R_DS(on) (8.5 mΩ), lower Q_g (22 nC)	Restricted to ≤24 V rail systems; better suited for portable battery-powered audio.	Select only if system rail voltage is ≤24 V and thermal budget permits higher conduction loss at >15 A.
STP80NF55-08	Higher V_DS (55 V), higher R_DS(on) (8.5 mΩ), larger TO-220 package, no Q_rr spec	Larger footprint and worse thermal resistance (R_θJC = 1.25°C/W but requires mounting hardware)	Prefer only when existing TO-220 layout prohibits I-Pak adoption and board space allows larger heatsink interface.

Compared with IRLR3803TRLPBF and STP80NF55-08, the IRLR4343TRRPBF uniquely balances 55 V rating, 42 mΩ R_DS(on), and 100 nC Q_rr in a surface-mount I-Pak package - making it optimal for space-constrained, thermally demanding Class-D amplifiers operating from 36–48 V rails.

Availability

IRLR4343TRRPBF is available at Aetrix Electronics and suitable for powered speakers, automotive infotainment systems, and home theater receivers requiring stable component supply and consistent parametric performance across production batches.

Supply support for IRLR4343TRRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies acquired International Rectifier in 2015 and continues to manufacture and support the HEXFET® power MOSFET portfolio with full documentation, application engineering, and qualification compliance.

This device belongs to the Class-D Audio Optimized HEXFET® family, designed specifically to meet the low-Q_rr, low-R_DS(on), and high-temperature reliability demands of high-fidelity switched-mode audio amplifiers.

FAQ

What is the maximum continuous drain current for IRLR4343TRRPBF at 100°C case temperature?

The datasheet specifies 26 A continuous drain current at T_C = 25°C and 19 A at T_C = 100°C with V_GS = 10 V. This derating reflects thermal limits of the I-Pak package and must be applied when calculating safe operating area in high-ambient environments.

Does IRLR4343TRRPBF require a gate resistor for stability in Class-D operation?

Yes - a 5–10 Ω series gate resistor is recommended to dampen high-frequency oscillation caused by trace inductance interacting with Q_gd and Miller capacitance. Layout best practices also require a 10 nF ceramic capacitor between gate and source near the package.

Can IRLR4343TRRPBF replace IRLR4343PbF in existing designs?

Yes - IRLR4343TRRPBF is the tape-and-reel, lead-free (PbF) version of IRLR4343PbF with identical electrical specifications, thermal characteristics, and I-Pak mechanical dimensions. No layout or thermal redesign is required for drop-in replacement.

How does the body diode's reverse recovery performance impact THD in Class-D amplifiers?

With Q_rr = 100 nC and t_rr = 52 ns, the body diode minimizes minority-carrier tail current during half-bridge dead-time commutation - directly reducing crossover distortion and intermodulation products that degrade THD+N below 0.015% at full power.

IRLR4343TRRPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 55 V

Current - Continuous Drain (Id) @ 25°C:: 26A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 50mOhm @ 4.7A, 10V

Vgs(th) (Max) @ Id:: 1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 42 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 740 pF @ 50 V

FET Feature:: -

Power Dissipation (Max):: 79W (Tc)

Operating Temperature:: -40°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-252AA (DPAK)

IRLR4343TRRPBF FAQ

1.How can I place an order for IRLR4343TRRPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRLR4343TRRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRLR4343TRRPBF reliable?

The price and inventory of IRLR4343TRRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRLR4343TRRPBF is usually 5 days.

3.What payment methods are accepted for IRLR4343TRRPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRLR4343TRRPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRLR4343TRRPBF?

IRLR4343TRRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRLR4343TRRPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRLR4343TRRPBF?

For technical support, including IRLR4343TRRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRLR4343TRRPBF requirements.

6.How does Aetrix verify that IRLR4343TRRPBF is sourced from the original manufacturer or authorized distributors?

All IRLR4343TRRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRLR4343TRRPBF meets industry standards.

7.What is the process for return or replacement of IRLR4343TRRPBF?

All IRLR4343TRRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRLR4343TRRPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRLR4343TRRPBF part is unused and in its original packaging.

Return procedure for IRLR4343TRRPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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