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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRLR6225PBF

Name: IRLR6225PBF
Brand: Infineon Technologies
SKU: IRLR6225PBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRLR6225PBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: IRLR6225PBF.pdf

Description:: MOSFET N-CH 20V 100A DPAK

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Product details

Overview

IRLR6225PBF from Infineon Technologies (formerly International Rectifier) is a 20 V, 42 A N-channel enhancement-mode HEXFET Power MOSFET in D-Pak package, optimized for low-voltage synchronous buck converters and battery protection circuits. It delivers 3.2 mΩ R_DS(on) at V_GS = 4.5 V, 48 nC total gate charge, and features integrated body diode with 35 ns reverse recovery time.

For engineers reviewing the IRLR6225PBF datasheet, IRLR6225PBF pinout, IRLR6225PBF application, or IRLR6225PBF equivalent, key selection criteria include its 20 V V_DS, 4.5 V logic-level gate drive compatibility, 2.2 Ω gate resistance, thermal resistance R_θJC = 2.0 °C/W, and MSL1 industrial qualification for high-reliability PCB assembly.

Technical Context

This MOSFET employs planar silicon process technology with optimized cell pitch and trench-free structure to achieve low on-resistance while maintaining robust avalanche capability (170 mJ single-pulse E_AS). Its gate threshold voltage of 0.8 V (typ.) and −4.0 mV/°C temperature coefficient enable stable turn-on across −55°C to +150°C junction range.

The device integrates a fast-recovery body diode (t_rr = 35 ns, Q_rr = 57 nC) and exhibits low output capacitance (C_oss = 915 pF) and reverse transfer capacitance (C_rss = 650 pF), supporting high-frequency switching up to 1 MHz in DC-DC applications.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	20 V - Maximum blocking voltage compatible with 12 V and 5 V input rails in portable power systems.
R_DS(on) @ V_GS = 4.5 V	3.2 mΩ (typ.) - Enables <1 W conduction loss at 42 A continuous current in TO-252 footprint.
Q_g	48 nC (typ.) - Determines gate driver current requirement (~1.2 A peak for 40 ns turn-on with 1.8 Ω R_G).
t_r/t_f	37 ns / 52 ns - Supports >500 kHz switching in synchronous rectification without excessive switching loss.
R_θJC	2.0 °C/W - Allows 63 W power dissipation at T_C = 100°C with minimal heatsinking in D-Pak mounting.
V_GS(th)	0.8 V (typ.) - Ensures reliable enhancement-mode turn-on with standard 3.3 V microcontroller GPIOs.
C_iss	3770 pF - Sets Miller plateau duration and influences gate drive loop stability in high-side configurations.

Pinout & Package

IRLR6225PBF uses the industry-standard D-Pak (TO-252AA) surface-mount package with exposed drain pad for thermal performance. Pin assignment follows G-D-S configuration (Gate-Drain-Source) when viewed from top with marking side up and leads pointing downward.

Pin/Terminal	Circuit Role	Design Meaning
Gate (Pin 1)	Control electrode	Receives logic-level voltage to modulate channel conductivity; requires 48 nC charge for full enhancement.
Drain (Pin 2, tab)	High-side current path	Exposed copper tab electrically connected to drain; primary thermal path to PCB copper pour.
Source (Pin 3)	Reference node	Common return for load current and gate drive reference; ties to ground or low-side switch source.

Key Features

Feature	Design Value
Logic-level gate drive	Operates fully enhanced at V_GS ≥ 4.5 V, eliminating need for level-shifting in 3.3 V/5 V control systems.
MSL1 moisture sensitivity	Zero bake requirement before reflow; supports standard lead-free SMT processes without floor-life constraints.
Integrated body diode	17 A continuous source current rating with 35 ns t_rr, enabling bidirectional current handling in H-bridge and OR-ing applications.
Industrial qualification	Complies with JEDEC JESD47F for extended temperature operation (−55°C to +150°C) and long-term reliability.
RoHS-compliant construction	Lead-, bromide-, and halogen-free materials meet EU Directive 2011/65/EU and IPC-1752A reporting requirements.

Applications

Battery Protection Switch

Synchronous Buck Converter

Use Scenario: Bidirectional overcurrent and short-circuit protection in 2–3 cell Li-ion battery packs.

IC Role / Device Role / Timing Role: Low-side N-channel switch controlling discharge path; body diode enables charging current flow during FET off-state.

Use Value: 3.2 mΩ R_DS(on) limits voltage drop to <130 mV at 42 A, preserving pack capacity and reducing thermal stress in compact modules.

Use Scenario: High-efficiency 5 V to 1.2 V point-of-load conversion for FPGA and ASIC core supplies.

IC Role / Device Role / Timing Role: Synchronous rectifier replacing Schottky diode; driven by complementary PWM signal with precise dead-time control.

Use Value: 48 nC Q_g and 37 ns t_r support 1 MHz operation with <5% duty-cycle loss, improving efficiency by 3–5% versus diode-based designs.

Motor Driver Half-Bridge

Hot-Swap Controller

Use Scenario: Low-voltage (<12 V) brushed DC motor control in robotics and medical devices.

IC Role / Device Role / Timing Role: Low-side switch in half-bridge topology; body diode recirculates inductive kickback during PWM off-time.

Use Value: 170 mJ single-pulse avalanche energy rating withstands inductive flyback transients without external snubbers.

Use Scenario: Inrush current limiting and fault isolation in 5 V/12 V backplane slots and modular power supplies.

IC Role / Device Role / Timing Role: Series pass element controlled by dedicated hot-swap IC; operates in linear mode during startup ramp.

Use Value: 20 V V_DS and 2.0 °C/W R_θJC allow safe linear-mode operation with <100 ms duration at 10 A, preventing thermal runaway.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRLR024NTRPbF	Higher R_DS(on) (4.5 mΩ @ 4.5 V), lower ID (38 A), same D-Pak package	Lower current handling limits use in >35 A continuous loads	Select when cost sensitivity outweighs 10% conduction loss increase and peak current remains ≤38 A.
STL220N4LF6AG	Lower V_DS (12 V), higher Q_g (65 nC), same logic-level drive	Not suitable for 20 V bus applications; better for ultra-low-voltage 3.3 V systems	Prefer for 12 V input rails where tighter V_DS margin improves safety factor but increases gate drive burden.

Compared with IRLR6225PBF, IRLR024NTRPbF trades conduction efficiency for cost in mid-current applications, while STL220N4LF6AG sacrifices voltage headroom for improved sub-5 V gate drive margin-neither offers drop-in replacement without circuit review.

Availability

IRLR6225PBF is available at Aetrix Electronics and suitable for battery management systems, synchronous buck converters, motor drivers, and hot-swap controllers requiring stable component supply and industrial-grade reliability.

Supply support for IRLR6225PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, automotive electronics, and industrial control solutions.

This device belongs to the HEXFET® Power MOSFET product line, engineered for high-current, low-voltage switching in space-constrained power conversion and protection circuits.

FAQ

What is the maximum continuous drain current for IRLR6225PBF at 100°C case temperature?

The maximum continuous drain current is 25 A at T_C = 100°C with V_GS = 10 V, derated from 42 A at 25°C per the linear derating factor of 0.5 W/°C. This reflects thermal limitation of the D-Pak package rather than silicon capability, and assumes proper PCB copper area for heat spreading.

Does IRLR6225PBF require a gate resistor for stability in switching applications?

Yes-a gate resistor (typically 1.8–10 Ω) is required to dampen ringing caused by gate-drain capacitance (C_rss = 650 pF) interacting with PCB trace inductance. The 2.2 Ω typical gate resistance specified in the datasheet refers to internal device resistance, not external drive impedance.

Can IRLR6225PBF be used in parallel configurations for higher current handling?

Yes-its positive temperature coefficient of R_DS(on) (normalized resistance increases with junction temperature) enables inherent current sharing. Parallel operation requires matched layout, identical gate drive paths, and thermal coupling to ensure balanced conduction between devices.

Is the body diode in IRLR6225PBF suitable for reverse polarity protection?

No-the body diode conducts from source to drain, making it unsuitable for reverse polarity protection which requires anode-to-cathode orientation from input to load. For that function, a discrete Schottky or P-channel MOSFET must be used upstream of the IRLR6225PBF.

IRLR6225PBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tube

Product Status:: Discontinued at Digi-Key

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 20 V

Current - Continuous Drain (Id) @ 25°C:: 100A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 2.5V, 4.5V

Rds On (Max) @ Id, Vgs:: 4mOhm @ 21A, 4.5V

Vgs(th) (Max) @ Id:: 1.1V @ 50µA

Gate Charge (Qg) (Max) @ Vgs:: 72 nC @ 4.5 V

Vgs (Max):: ±12V

Input Capacitance (Ciss) (Max) @ Vds:: 3770 pF @ 10 V

FET Feature:: -

Power Dissipation (Max):: 63W (Tc)

Operating Temperature:: -50°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: DPAK

IRLR6225PBF FAQ

1.How can I place an order for IRLR6225PBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRLR6225PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRLR6225PBF reliable?

The price and inventory of IRLR6225PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRLR6225PBF is usually 5 days.

3.What payment methods are accepted for IRLR6225PBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRLR6225PBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRLR6225PBF?

IRLR6225PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRLR6225PBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRLR6225PBF?

For technical support, including IRLR6225PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRLR6225PBF requirements.

6.How does Aetrix verify that IRLR6225PBF is sourced from the original manufacturer or authorized distributors?

All IRLR6225PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRLR6225PBF meets industry standards.

7.What is the process for return or replacement of IRLR6225PBF?

All IRLR6225PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRLR6225PBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRLR6225PBF part is unused and in its original packaging.

Return procedure for IRLR6225PBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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