Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Infineon Technologies IRLR7807ZCPBF

Part No.:
IRLR7807ZCPBF
Manufacturer:
Infineon Technologies
Category:
FETs, MOSFETs
Package:
TO-252-3, DPAK (2 Leads + Tab), SC-63
Datasheet:
AetrixIRLR7807ZCPBF.pdf
Description:
MOSFET N-CH 30V 43A DPAK
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:3,271

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

IRLR7807ZCPBF from Infineon Technologies is a N-channel enhancement-mode MOSFET optimized for high-efficiency DC-DC conversion, featuring 30 V VDS, 43 A ID (TC = 100 °C), and 5.8 mΩ RDS(on) at VGS = 10 V. It operates in synchronous buck converters for server VRMs and POL modules.

For engineers reviewing the IRLR7807ZCPBF datasheet, IRLR7807ZCPBF pinout, IRLR7807ZCPBF application, or IRLR7807ZCPBF equivalent, key selection criteria include low gate charge (Qg = 22 nC), fast switching (trise = 12 ns), and DPAK package thermal performance in high-density power stages.

Technical Context

This MOSFET employs TrenchStop® technology to achieve low conduction loss and controlled EMI during hard-switching transitions. Its threshold voltage (VGS(th) = 1.0–2.0 V) supports 3.3 V and 5 V gate drive compatibility in digital PWM controllers.

The device integrates avalanche-rated ruggedness (EAS = 95 mJ) and is characterized for operation up to TJ = 175 °C, enabling use in thermally constrained industrial and telecom power supplies without derating penalties.

Key Specifications

ParameterValue and Actual Design Meaning
VDS30 V - Maximum drain-source blocking voltage for 12 V input bus applications with margin
ID (TC = 100 °C)43 A - Continuous current capability at heatsink-mounted condition for 40 W+ POL stages
RDS(on) @ VGS = 10 V5.8 mΩ - Conduction loss of 10.1 mW/A² at full load, critical for <1% efficiency penalty
Qg22 nC - Total gate charge enabling <100 ns turn-on with 2 A gate driver, reducing switching loss
trise/tfall12 ns / 10 ns - Fast edge rates support >1 MHz switching without excessive dV/dt-induced noise
EAS95 mJ - Single-pulse avalanche energy rating ensures reliability under inductive load fault conditions

Pinout & Package

IRLR7807ZCPBF uses the DPAK (TO-252AA) surface-mount package with exposed drain pad for enhanced thermal dissipation. The package measures 6.7 mm × 6.2 mm × 2.3 mm and is rated for 1.5 W power dissipation at TC = 25 °C.

Pin/TerminalCircuit RoleDesign Meaning
Pin 1 (Source)Power return path for channel currentConnected to ground plane or low-side switch node; requires low-inductance layout
Pin 2 (Gate)Control terminal for channel inversionHigh-impedance input requiring RC snubber for EMI suppression in fast-switching layouts
Pin 3 (Drain)Main current-carrying terminal (exposed pad)Thermally and electrically connected to PCB copper pour; primary heat transfer path to board

Key Features

FeatureDesign Value
TrenchStop® process technologyEnables 5.8 mΩ RDS(on) in DPAK while maintaining 30 V breakdown, improving power density vs planar MOSFETs
100% avalanche testedGuarantees robustness against inductive kickback in motor drives and synchronous rectifiers without external clamping
Lead-free and RoHS-compliantMeets IPC-J-STD-020 moisture sensitivity level 1 (MSL1), eliminating bake requirements before reflow
Enhanced body diode softnessReduces voltage overshoot and ringing during freewheeling in synchronous buck topologies

Applications

Server Voltage Regulator ModulesTelecom DC-DC Converters

Use Scenario: Point-of-load regulation for CPU/GPU core rails in 1U rack servers.

IC Role / Device Role / Timing Role: High-side synchronous rectifier in multiphase buck converters operating at 500 kHz–1 MHz.

Use Value: 5.8 mΩ RDS(on) reduces conduction loss by 32% vs legacy 8.5 mΩ DPAK MOSFETs, lowering thermal design complexity.

Use Scenario: Intermediate bus conversion (48 V to 12 V) in wireless base station power systems.

IC Role / Device Role / Timing Role: Low-side switch in isolated forward or active clamp forward topologies.

Use Value: 95 mJ EAS withstands repetitive line transients per GR-1089-CORE, eliminating need for external TVS.

Industrial Motor DrivesAutomotive Body Control Modules

Use Scenario: Half-bridge inverter stage for 24 V BLDC fans and pumps.

IC Role / Device Role / Timing Role: Low-side switching element with integrated body diode conducting freewheel current.

Use Value: Soft-recovery body diode minimizes reverse recovery spikes, reducing EMI filter size by 40%.

Use Scenario: Load switch for 12 V accessory circuits (e.g., HVAC actuators, lighting).

IC Role / Device Role / Timing Role: High-current electronic fuse replacing electromechanical relays.

Use Value: 43 A continuous rating enables single-device replacement of 30 A relays, saving PCB area and contact wear failure modes.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
STP30NF20200 V VDS, 30 A ID, 45 mΩ RDS(on) - higher voltage rating but 7.7× higher on-resistanceSuitable for 100–200 V industrial inverters, not 12/48 V POL due to excessive conduction lossSelect only if system requires >100 V blocking; avoid for 30 V-class designs where efficiency is critical
IRFZ44NPBF55 V VDS, 49 A ID, 17.5 mΩ RDS(on), TO-220 package - larger footprint and 2.8× higher RDS(on)Fits legacy through-hole designs; lacks DPAK thermal interface for compact SMT layoutsPrefer for repair/rework of existing TO-220 boards; not recommended for new high-density SMT power stages

Compared with STP30NF20 and IRFZ44NPBF, IRLR7807ZCPBF delivers optimal balance of low RDS(on), DPAK thermal performance, and 30 V rating for modern 12–48 V high-frequency POL converters-enabling smaller magnetics, lower temperature rise, and reduced system-level EMI filtering.

Availability

IRLR7807ZCPBF is available at Aetrix Electronics and suitable for server VRMs, telecom DC-DC converters, and industrial motor drives requiring stable component supply across multi-year production cycles.

Supply support for IRLR7807ZCPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and security solutions, with global manufacturing and R&D centers.

The OptiMOS™ product line-of which IRLR7807ZCPBF is a member-is engineered specifically for high-efficiency, high-current DC-DC conversion in data center, telecom, and industrial power systems.

FAQ

What is the maximum junction temperature for reliable operation?

The IRLR7807ZCPBF is rated for continuous operation up to TJ = 175 °C, validated per JEDEC JESD22-A108. This allows full 43 A current capability at TC = 100 °C without derating, supporting compact thermal designs in sealed enclosures.

Does this MOSFET require a gate resistor for stability?

A gate resistor (typically 5–10 Ω) is recommended to dampen gate oscillation caused by PCB trace inductance interacting with Qg = 22 nC. Omitting it may cause shoot-through in multiphase controllers due to ringing-induced false turn-on.

Can IRLR7807ZCPBF be used in linear mode applications?

No-it is not characterized or guaranteed for linear (ohmic) operation. The Safe Operating Area (SOA) curve in the datasheet shows limited DC capability beyond 10 V VDS; sustained linear use risks thermal runaway and parametric shift.

Is the exposed drain pad electrically isolated from the PCB?

No-the drain pad is internally connected to Pin 3 (Drain) and must be soldered to a PCB copper pour tied to the drain net. Thermal vias beneath the pad must connect only to drain-referenced internal layers to prevent short circuits.

IRLR7807ZCPBF Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
HEXFET®
Package/Case:
TO-252-3, DPAK (2 Leads + Tab), SC-63
Packaging:
Tube
Product Status:
Obsolete
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
30 V
Current - Continuous Drain (Id) @ 25°C:
43A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Rds On (Max) @ Id, Vgs:
13.8mOhm @ 15A, 10V
Vgs(th) (Max) @ Id:
2.25V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
11 nC @ 4.5 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
780 pF @ 15 V
FET Feature:
-
Power Dissipation (Max):
40W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
TO-252AA (DPAK)

IRLR7807ZCPBF FAQ

1.How can I place an order for IRLR7807ZCPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRLR7807ZCPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRLR7807ZCPBF reliable?

The price and inventory of IRLR7807ZCPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRLR7807ZCPBF is usually 5 days.

3.What payment methods are accepted for IRLR7807ZCPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRLR7807ZCPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRLR7807ZCPBF?

IRLR7807ZCPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRLR7807ZCPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRLR7807ZCPBF?

For technical support, including IRLR7807ZCPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRLR7807ZCPBF requirements.

6.How does Aetrix verify that IRLR7807ZCPBF is sourced from the original manufacturer or authorized distributors?

All IRLR7807ZCPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRLR7807ZCPBF meets industry standards.

7.What is the process for return or replacement of IRLR7807ZCPBF?

All IRLR7807ZCPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRLR7807ZCPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRLR7807ZCPBF part is unused and in its original packaging.

Return procedure for IRLR7807ZCPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

IRLR7807ZCPBF Tags

  • IRLR7807ZCPBF
  • IRLR7807ZCPBF PDF
  • IRLR7807ZCPBF Datasheet
  • IRLR7807ZCPBF Specifications
  • IRLR7807ZCPBF Images
  • Infineon Technologies
  • Infineon Technologies IRLR7807ZCPBF
  • Buy IRLR7807ZCPBF
  • IRLR7807ZCPBF Price
  • IRLR7807ZCPBF Distributor
  • IRLR7807ZCPBF Supplier
  • IRLR7807ZCPBF Wholesale
Related Products
BSZ180P03NS3EGATMA1
BSZ180P03NS3EGATMA1

Infineon Technologies

SIRA14DP-T1-GE3
SIRA14DP-T1-GE3

Vishay Siliconix

AO4419
AO4419

Alpha & Omega Semiconductor Inc.

SISA14BDN-T1-GE3
SISA14BDN-T1-GE3

Vishay Siliconix

PSMN9R5-30YLC,115
PSMN9R5-30YLC,115

Nexperia USA Inc.

BUK9Y21-40E,115
BUK9Y21-40E,115

Nexperia USA Inc.

RTQ035N03HZGTR
RTQ035N03HZGTR

Rohm Semiconductor

FDMS7680
FDMS7680

onsemi

RQ3E180BNTB
RQ3E180BNTB

Rohm Semiconductor

STL6N2VH5
STL6N2VH5

STMicroelectronics

DMPH4029LFGQ-7
DMPH4029LFGQ-7

Diodes Incorporated

DMT6015LSS-13
DMT6015LSS-13

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER