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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRLR7807ZPBF

Name: IRLR7807ZPBF
Brand: Infineon Technologies
SKU: IRLR7807ZPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRLR7807ZPBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: IRLR7807ZPBF.pdf

Description:: MOSFET N-CH 30V 43A DPAK

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRLR7807ZPBF from Infineon Technologies is a 30V N-channel HEXFET Power MOSFET in D-Pak package, optimized for high-frequency synchronous buck converters in CPU power delivery. It delivers 13.8 mΩ R_DS(on) at V_GS = 4.5 V, 7.0 nC total gate charge, and 12 A continuous drain current at T_C = 25°C, enabling efficient low-voltage, high-current switching in server and desktop VRMs.

For engineers reviewing the IRLR7807ZPBF datasheet, IRLR7807ZPBF pinout, IRLR7807ZPBF application, or IRLR7807ZPBF equivalent, key selection criteria include its ultra-low gate impedance, fully characterized avalanche capability (E_AS = 120 mJ), body diode reverse recovery performance (Q_rr = 14–21 nC), and thermal resistance (R_θJC = 3.75°C/W) for thermally constrained PCB layouts.

Technical Context

This MOSFET employs planar silicon HEXFET architecture with optimized cell pitch and trench-free die design to minimize R_DS(on) while maintaining robust short-circuit withstand time. Its gate threshold voltage (V_GS(th) = 1.35–2.25 V) and negative temperature coefficient (−4.5 mV/°C) support stable parallel operation under thermal stress.

The device integrates an intrinsic body diode with fast reverse recovery (t_rr = 23–35 ns) and low forward voltage (V_SD ≤ 1.0 V at 12 A), making it suitable as a synchronous rectifier in non-isolated DC/DC topologies where diode conduction loss dominates at light loads.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Maximum blocking voltage compatible with 24 V input rails and transient overshoot margins in point-of-load converters.
R_DS(on) max @ 4.5 V	13.8 mΩ - Enables <1.7 W conduction loss at 12 A DC, critical for >90% efficiency in 12 V → 1.2 V buck stages.
Q_g typ.	7.0 nC - Reduces gate drive power and enables use with low-current PWM controllers (e.g., ISL6269, IR35201) without external buffer.
I_D @ T_C = 25°C	30 A - Supports peak current handling in transient load steps common in CPU power delivery (e.g., Intel VR13).
R_θJC	3.75 °C/W - Allows direct heatsinking via PCB copper pour or clip-mounting, supporting junction temperatures up to 175°C in compact VRM footprints.
E_AS	120 mJ - Ensures reliable unclamped inductive switching during startup/fault conditions without external snubbers.
Q_rr	14–21 nC - Minimizes cross-conduction loss and EMI in synchronous rectification mode when paired with control FETs.

Pinout & Package

IRLR7807ZPBF is housed in a surface-mount D-Pak (TO-252AA) package with exposed drain pad for thermal and electrical connection. The package supports standard reflow profiles and offers 3.75°C/W junction-to-case thermal resistance when mounted on ≥1 in² 2-oz copper.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Source)	Source terminal (S)	Common return path for load current; tied to power ground plane; low-inductance routing required for switching stability.
Pin 2 (Gate)	Control input (G)	High-impedance MOS gate requiring <10 Ω series resistance to suppress ringing; sensitive to ESD (±20 V rating).
Pin 3 (Drain)	Power output (D)	Connected to switching node; electrically and thermally bonded to large copper area via exposed pad; carries full load current and dV/dt transients.

Key Features

Feature	Design Value
Ultra-low R_DS(on) at 4.5 V	11 mΩ typical - Enables direct drive from 5 V or 3.3 V logic-level controllers without level-shifting, reducing BOM count.
Fully characterized avalanche	E_AS = 120 mJ at T_J = 25°C - Eliminates need for external clamping circuits in synchronous buck designs with high di/dt.
Low Q_gd/Q_gs1 ratio	2.7 nC / 1.8 nC = 1.5 - Suppresses C_dv/dt turn-on risk during high dV/dt transitions at the switching node.
Lead-free and RoHS-compliant	Meets JEDEC J-STD-020C reflow profile - Compatible with standard Pb-free assembly processes and industrial environmental requirements.

Applications

Server VRM Phase Legs

Laptop CPU Core Power

Use Scenario: High-density 3+1 or 4+1 phase buck converter supplying 1.0–1.3 V @ up to 120 A to multi-core Xeon or EPYC processors.

IC Role / Device Role / Timing Role: Synchronous rectifier (low-side FET) operating at 300–600 kHz with dead-time-controlled gate drive.

Use Value: 13.8 mΩ R_DS(on) reduces conduction loss by 35% vs. legacy 20 mΩ devices, lowering thermal density and enabling fanless cooling in 1U chassis.

Use Scenario: Compact 2-phase VR for Intel Core i7/i9 mobile CPUs in ultrabooks with strict height and thermal constraints.

IC Role / Device Role / Timing Role: Low-side switch in dual-phase interleaved buck, driven by integrated PWM controller with adaptive dead-time control.

Use Value: 7.0 nC Q_g allows full switching at 1 MHz with <10 mA gate drive current, minimizing driver IC power consumption and heat generation.

Industrial PLC I/O Power Rails

Automotive ADAS Domain Controller Core Supply

Use Scenario: 5 V and 3.3 V auxiliary power rails in programmable logic controllers requiring high reliability over −40°C to +85°C ambient.

IC Role / Device Role / Timing Role: Secondary-side switch in isolated flyback or buck-boost regulator powering FPGA configuration and communication interfaces.

Use Value: 175°C maximum junction temperature and −55°C to +175°C storage range ensure long-term operation in sealed enclosures with no forced airflow.

Use Scenario: Core voltage supply (1.8 V @ 25 A) for NVIDIA Orin or Qualcomm SA8540P SoCs in autonomous driving compute modules.

IC Role / Device Role / Timing Role: High-efficiency synchronous rectifier in 12 V → 1.8 V multiphase buck, operating under AEC-Q101 stress conditions.

Use Value: Fully characterized avalanche energy (120 mJ) provides fault tolerance during load dump or ESD events in automotive 12 V battery systems.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRLR8726PBF	R_DS(on) = 7.8 mΩ @ 4.5 V; Q_g = 13.5 nC; V_DS = 30 V	Higher conduction efficiency but increased gate drive loss and slower switching due to higher Q_g.	Prefer when thermal margin is tight and gate drive capability is sufficient (e.g., discrete gate drivers).
SI7850DP-T1-GE3	R_DS(on) = 12.5 mΩ @ 4.5 V; Q_g = 6.8 nC; SO-8 package (R_θJA = 62°C/W)	Same gate charge but inferior thermal performance due to smaller package; not suitable for >15 A continuous operation.	Select only for space-constrained prototypes where D-Pak mounting is impractical and power dissipation remains below 1.2 W.

Compared with IRLR7807ZPBF, IRLR8726PBF trades higher gate charge for lower R_DS(on), favoring steady-state efficiency over dynamic loss; SI7850DP-T1-GE3 matches gate drive needs but lacks thermal headroom for production-level current density in VRM applications.

Availability

IRLR7807ZPBF is available at Aetrix Electronics and suitable for server VRMs, laptop CPU core supplies, and industrial PLC power rails requiring stable component supply across multi-year production cycles.

Supply support for IRLR7807ZPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor leader specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to ISO/TS 16949 and IATF 16949.

The IRLR7807ZPBF belongs to Infineon's HEXFET® Power MOSFET product line, engineered specifically for high-efficiency, high-frequency DC/DC conversion in computing and communications infrastructure where low R_DS(on) and fast switching are essential.

FAQ

What is the maximum continuous drain current at 100°C case temperature?

The IRLR7807ZPBF supports 17 A continuous drain current at T_C = 100°C with V_GS = 10 V, derated from 30 A at 25°C per the linear derating factor of 0.27 W/°C and R_DS(on) temperature dependence shown in Figure 4 of the datasheet.

Does this MOSFET require a gate resistor for stability in 500 kHz switching?

Yes - a 4.7 Ω to 10 Ω non-inductive gate resistor is recommended to dampen gate-source ringing caused by PCB trace inductance and the device's 2.7 nC Q_gd, especially when driven by high-speed controllers like the IR35201. Layout must minimize loop area between gate driver output and MOSFET gate pin.

Can IRLR7807ZPBF be used in parallel configurations?

Yes - its negative V_GS(th) temperature coefficient (−4.5 mV/°C) ensures inherent current sharing across paralleled units. However, matched gate drive paths and symmetrical source inductance (<0.5 nH difference) are mandatory to prevent oscillation or current imbalance above 20 A total load.

Is the body diode suitable for reverse recovery in synchronous rectification?

Yes - the intrinsic body diode has t_rr = 23–35 ns and Q_rr = 14–21 nC at I_F = 12 A, enabling clean commutation in synchronous buck topologies up to 1 MHz. For optimal performance, pair with a control FET having matched dead-time and low Q_gd to avoid shoot-through.

IRLR7807ZPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tube

Product Status:: Discontinued at Digi-Key

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 43A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 13.8mOhm @ 15A, 10V

Vgs(th) (Max) @ Id:: 2.25V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 11 nC @ 4.5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 780 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 40W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-252AA (DPAK)

IRLR7807ZPBF FAQ

1.How can I place an order for IRLR7807ZPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRLR7807ZPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRLR7807ZPBF reliable?

The price and inventory of IRLR7807ZPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRLR7807ZPBF is usually 5 days.

3.What payment methods are accepted for IRLR7807ZPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRLR7807ZPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRLR7807ZPBF?

IRLR7807ZPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRLR7807ZPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRLR7807ZPBF?

For technical support, including IRLR7807ZPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRLR7807ZPBF requirements.

6.How does Aetrix verify that IRLR7807ZPBF is sourced from the original manufacturer or authorized distributors?

All IRLR7807ZPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRLR7807ZPBF meets industry standards.

7.What is the process for return or replacement of IRLR7807ZPBF?

All IRLR7807ZPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRLR7807ZPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRLR7807ZPBF part is unused and in its original packaging.

Return procedure for IRLR7807ZPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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