Infineon Technologies IRLR7807ZTR

Overview

IRLR7807ZTR from Infineon Technologies (formerly International Rectifier) is a 30V, 43A N-channel logic-level HEXFET® Power MOSFET in D-Pak package, featuring 13.8mΩ R_DS(on) at V_GS = 4.5V, 7.0nC total gate charge, and fully characterized avalanche capability. It serves as the synchronous FET in high-frequency buck converters for CPU core power delivery.

For engineers reviewing the IRLR7807ZTR datasheet, IRLR7807ZTR pinout, IRLR7807ZTR application, or IRLR7807ZTR equivalent, key selection criteria include low 4.5V-threshold conduction loss, minimized Q_gd/Q_gs1 ratio to suppress C_dv/dt turn-on in switching-node placement, and validated unclamped inductive avalanche energy of 100mJ at T_J = 25°C.

Technical Context

This MOSFET employs planar silicon process with optimized cell pitch and trench-free structure to achieve ultra-low gate impedance and stable R_DS(on) over temperature (±20% from −55°C to 175°C). Its body diode exhibits 14–21nC reverse recovery charge (Q_rr) and 23–35ns trr, enabling efficient synchronous rectification without external Schottky supplementation.

The device is characterized for clamped and unclamped inductive switching, with specified E_AS = 100mJ (single-pulse, T_J = 25°C), I_AR = 30A, and linear SOA up to 100µs. Thermal resistance R_θJC = 3.75°C/W supports high-power-density PCB-mount designs with copper-clad thermal pads.

Key Specifications

Pinout & Package

IRLR7807ZTR uses the surface-mount D-Pak (TO-252AA) package with exposed drain pad for thermal and electrical connection. Pin 1 = Gate, Pin 2 = Drain (tab), Pin 3 = Source.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level power MOSFET applications.

Compared with IRLR7807ZTR, the IRLHS6342TRPBF delivers lower conduction loss in compact layouts but demands more precise gate drive tuning, while the SI7850DP-T1-GE3 offers footprint compatibility at the cost of reduced noise immunity and thermal headroom in high-current applications.

Availability

IRLR7807ZTR is available at Aetrix Electronics and suitable for server CPU VRMs, laptop core power supplies, GPU power delivery systems, and industrial FPGA core supplies requiring stable component supply and long-term manufacturing continuity.

Supply support for IRLR7807ZTR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices, with global manufacturing and quality certification to ISO/TS 16949 and IECQ QC 080000.

The HEXFET® Power MOSFET product line targets high-efficiency DC/DC conversion in computing, telecom, and industrial power systems, emphasizing low gate charge, rugged avalanche performance, and logic-level drive compatibility for simplified system integration.

FAQ

What is the maximum continuous drain current for IRLR7807ZTR at 100°C case temperature?

The maximum continuous drain current is 30A at T_C = 100°C, derated linearly above 25°C at 0.27W/°C. This rating assumes proper PCB copper area (≥1in² 2oz Cu) and thermal via count per the IR PD-94662 layout guidelines. Operation beyond this limit risks thermal runaway due to R_DS(on) increase with junction temperature.

Does IRLR7807ZTR require a gate resistor for safe operation in synchronous buck converters?

Yes - a 2–10Ω gate resistor is recommended to dampen ringing from gate loop inductance and control dV/dt during turn-on. The 2.7nC Q_gd makes it susceptible to oscillation without controlled gate drive; values outside this range may cause excessive switching loss or shoot-through if too low, or slow turn-off leading to overlap conduction if too high.

Can IRLR7807ZTR be used as the high-side (control) FET in a buck converter?

No - its logic-level threshold (V_GS(th) = 1.35–2.25V) and lack of integrated bootstrap diode make it unsuitable as a high-side switch without external level-shifting circuitry. It is specifically optimized as the low-side synchronous rectifier FET, where source is referenced to ground and gate drive is single-supply.

What is the typical reverse recovery time (trr) of the body diode under 12A forward current?

The typical reverse recovery time is 23ns at I_S = 12A, T_J = 25°C, with maximum 35ns. This value is measured with di/dt = 100A/µs and V_DD = 15V. At elevated temperatures or higher di/dt, trr increases slightly but remains within 40ns, ensuring clean commutation in high-frequency buck topologies.