Infineon Technologies IRLR7807ZTRLPBF

Overview

IRLR7807ZTRLPBF from Infineon Technologies is a 30V N-channel HEXFET Power MOSFET in D-Pak (TO-252) package, optimized as a synchronous rectifier FET in high-frequency buck converters for CPU core power. It delivers 13.8 mΩ R_DS(on) at V_GS = 4.5 V, 7.0 nC total gate charge, and 12 A continuous drain current at T_C = 25°C - enabling efficient low-voltage, high-current DC/DC conversion in server VRMs and notebook power stages.

For engineers reviewing the IRLR7807ZTRLPBF datasheet, IRLR7807ZTRLPBF pinout, IRLR7807ZTRLPBF application, or IRLR7807ZTRLPBF equivalent, key selection criteria include its ultra-low gate impedance, fully characterized avalanche capability (100 mJ E_AS), body diode reverse recovery performance (Q_rr = 14–21 nC), and thermal resistance (R_θJC = 3.75°C/W) for thermally constrained PCB layouts.

Technical Context

This device operates as a low-side synchronous rectifier in non-isolated buck topologies, where fast switching (t_r = 28 ns, t_f = 3.5 ns) and low Q_gd/Q_gs1 ratio minimize C_dv/dt turn-on risk during high dV/dt node transitions. Its gate threshold voltage (V_GS(th) = 1.35–2.25 V) ensures robust enhancement-mode operation with 4.5 V logic-level drive.

The integrated body diode supports bidirectional current flow during dead-time intervals, with V_SD ≤ 1.0 V at 12 A and t_rr = 23–35 ns - critical for minimizing shoot-through losses and reverse recovery spikes in tightly regulated processor power supplies.

Key Specifications

Pinout & Package

IRLR7807ZTRLPBF uses the surface-mount D-Pak (TO-252) package with exposed drain pad for thermal and electrical connection. The three-terminal configuration supports high-current, low-inductance PCB layout in power stage modules.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with IRLR7807ZTRLPBF, IRLR8726PbF trades higher gate charge for lower R_DS(on), increasing drive loss but improving conduction efficiency; SI7850DP-T1-GE3 offers similar on-resistance but lacks documented avalanche capability and has inferior C_dv/dt immunity - making IRLR7807ZTRLPBF optimal for high-reliability, high-dV/dt synchronous buck stages.

Availability

IRLR7807ZTRLPBF is available at Aetrix Electronics and suitable for server VRMs, notebook CPU core supplies, GPU voltage regulators, and industrial FPGA power rails requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for IRLR7807ZTRLPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor leader specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to ISO/TS 16949 and IECQ QC 080000.

This part belongs to Infineon's HEXFET Power MOSFET product line, engineered specifically for high-efficiency, high-frequency DC/DC conversion in computing and communications infrastructure where low gate charge and avalanche ruggedness are mandatory.

FAQ

What is the maximum recommended gate drive voltage for IRLR7807ZTRLPBF?

The absolute maximum V_GS is ±20 V, but Infineon specifies reliable operation at 10 V for full R_DS(on) characterization. For logic-level drive, 4.5 V is sufficient to achieve 13.8 mΩ, and exceeding 12 V provides no significant on-resistance improvement while increasing gate oxide stress and ESD risk. Use 10 V with 10 Ω series resistance for optimal trade-off between speed and reliability.

Does IRLR7807ZTRLPBF require a gate resistor, and if so, what value is recommended?

Yes - a gate resistor is required to damp parasitic oscillation and limit peak gate current. A 5–10 Ω resistor placed as close as possible to the gate pin is recommended. This value balances switching speed (reducing t_r/t_f) with suppression of C_dv/dt-induced turn-on, especially critical in synchronous buck nodes where dV/dt exceeds 10 V/ns. Values below 3 Ω increase shoot-through risk; above 22 Ω degrades efficiency.

Can IRLR7807ZTRLPBF be used in parallel configurations, and what layout considerations apply?

Yes - it supports paralleling due to positive R_DS(on) temperature coefficient, ensuring current sharing stability. Critical layout practices include matched gate trace lengths (<1 mm difference), symmetrical source routing with Kelvin connections, and shared thermal pad area with uniform solder paste volume. Avoid star grounding at the source; instead, use a low-inductance common source plane to prevent oscillation and unequal current distribution.

Is the body diode of IRLR7807ZTRLPBF suitable for reverse recovery in hard-switched topologies?

The body diode is characterized for reverse recovery (t_rr = 23–35 ns, Q_rr = 14–21 nC) and is suitable for synchronous rectification in hard-switched buck converters, but not for freewheeling in boost or flyback topologies with high di/dt. Its soft recovery behavior minimizes voltage overshoot, yet designers must ensure dead time exceeds 50 ns to avoid cross-conduction - verified via oscilloscope measurement of V_GS and V_DS waveforms under load.