My Inquiry
My Account
Infineon Technologies IRLR7807ZTRPBF
- Part No.:
- IRLR7807ZTRPBF
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Datasheet:
-
IRLR7807ZTRPBF.pdf
- Description:
- MOSFET N-CH 30V 43A DPAK
- Quantity:
- Payment:
- Shipping:
Inventory:9,928
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
IRLR7807ZTRPBF from Infineon Technologies is a 30V, 43A N-channel enhancement-mode HEXFET Power MOSFET in D-Pak (TO-252) package, featuring 13.8 mΩ RDS(on) at VGS = 4.5V, 7.0 nC total gate charge, and fully characterized unclamped avalanche capability-designed for high-frequency synchronous buck converters in CPU core power delivery.
For engineers reviewing the IRLR7807ZTRPBF datasheet, IRLR7807ZTRPBF pinout, IRLR7807ZTRPBF application, or IRLR7807ZTRPBF equivalent, key selection criteria include low-voltage gate drive compatibility (4.5V logic-level), body diode reverse recovery performance (Qrr = 14–21 nC), thermal resistance (RθJC = 3.75°C/W), and safe operating area under pulsed inductive loads.
Technical Context
This MOSFET employs planar silicon process technology optimized for low RDS(on) and ultra-low gate impedance, enabling fast switching with td(on) = 7.1 ns and tf = 3.5 ns at VDD = 15V. Its intrinsic body diode supports synchronous rectification with trr = 23–35 ns and VSD ≤ 1.0 V at IS = 12A.
The device is rated for continuous drain current up to 43 A at TC = 25°C and 30 A at TC = 100°C, with linear derating of 0.27 W/°C above 25°C. Avalanche energy rating EAS = 100 mJ (TJ = 25°C) confirms robustness in hard-switching and transient overvoltage conditions.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 30 V - Maximum blocking voltage compatible with 24V input rails and 5V/3.3V logic-level gate drivers. |
| RDS(on) max @ 4.5V | 13.8 mΩ - Enables <1.5W conduction loss at 12A DC, critical for high-efficiency CPU VRMs. |
| Qg typ. | 7.0 nC - Low gate charge reduces driver power loss and enables >1 MHz switching without excessive gate drive burden. |
| ID @ TC = 25°C | 43 A - Supports high-current phases in multi-phase buck converters with minimal paralleling. |
| RθJC | 3.75 °C/W - Allows direct heatsinking to PCB copper or external heatsink for thermal management in compact layouts. |
| EAS | 100 mJ - Withstands single-pulse inductive energy transients without failure, improving system reliability. |
| Qrr | 14–21 nC - Quantifies body diode reverse recovery charge; directly impacts shoot-through risk and Q1 losses in synchronous topology. |
Pinout & Package
IRLR7807ZTRPBF is housed in a surface-mount D-Pak (TO-252) package with exposed drain pad for thermal and electrical connection. The package features gull-wing leads compatible with standard reflow soldering processes and provides low-inductance source-drain paths.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 (Source) | Source terminal (S) | Low-side reference node; connects to ground plane or output inlay; carries full load current with minimal parasitic inductance. |
| Pin 2 (Gate) | Control input (G) | High-impedance MOS gate requiring <7 nC charge; sensitive to dV/dt coupling-requires local gate resistor and Kelvin source routing. |
| Pin 3 (Drain) | Power output (D) | Exposed metal pad on bottom surface; electrically and thermally connected to drain; must be soldered to large copper pour for heat dissipation. |
Key Features
| Feature | Design Value |
|---|---|
| Ultra-low RDS(on) at 4.5V | 13.8 mΩ enables efficient operation directly from 5V or 4.5V PWM controllers without level-shifting. |
| Fully characterized avalanche | 100 mJ single-pulse EAS validated per JEDEC JESD24-1, supporting ruggedness in non-isolated DC/DC designs. |
| Low Qgd/Qgs1 ratio | Qgd = 2.7 nC, Qgs1 = 1.8 nC → ratio ≈ 1.5 - minimizes Cdv/dt turn-on risk in high-dV/dt synchronous nodes. |
| Optimized body diode | Qrr = 14–21 nC and trr = 23–35 ns reduce cross-conduction losses and improve light-load efficiency in synchronous FETs. |
Applications
| Server CPU Voltage Regulator | Laptop Core Power Supply |
|---|---|
Use Scenario: Multi-phase 30A+ buck converter supplying Intel/AMD processor cores with dynamic load steps up to 300 A/µs. IC Role / Device Role / Timing Role: Low-side synchronous FET handling high RMS current and fast transient response; operates at 300–1000 kHz switching frequency. Use Value: 13.8 mΩ RDS(on) at 4.5V ensures <1.2W conduction loss at 30A, while 7.0 nC Qg enables clean gate drive with minimal overshoot. | Use Scenario: Compact dual-phase VRM powering mobile SoCs with strict thermal envelope (<40°C case rise) and thin-profile PCB constraints. IC Role / Device Role / Timing Role: High-current, low-RDS(on) switch in space-constrained layout; mounted directly on top layer with thermal pad soldered to internal copper. Use Value: RθJC = 3.75°C/W allows 43A operation with <15°C junction-to-case rise, avoiding thermal throttling during burst workloads. |
| Industrial PLC Power Module | Networking ASIC Power Rail |
Use Scenario: 24V-input buck stage delivering 12V@20A to programmable logic controller I/O banks with 10-year field life requirement. IC Role / Device Role / Timing Role: Primary power switch subjected to repetitive surge currents and ambient temperatures up to 85°C. Use Value: Rated 30A continuous at TC = 100°C and 100 mJ EAS ensure long-term reliability under industrial thermal cycling and line transients. | Use Scenario: Point-of-load regulator for 7nm networking ASICs requiring sub-1% output ripple and <500 ns transient response. IC Role / Device Role / Timing Role: Synchronous rectifier in high-frequency (800 kHz+) buck converter; body diode conducts during dead-time intervals. Use Value: Qrr = 14–21 nC and VSD ≤ 1.0 V minimize reverse recovery loss and forward conduction drop, preserving regulation accuracy. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel logic-level power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRLR8721PBF | RDS(on) = 9.8 mΩ @ 4.5V; Qg = 11.5 nC; same D-Pak package | Lower RDS(on) improves conduction loss but higher Qg increases switching loss above 500 kHz | Prefer for lower-current, thermally constrained designs where conduction dominates; avoid in >600 kHz high-frequency VRMs. |
| SI7850DP-T1-GE3 | RDS(on) = 12.5 mΩ @ 4.5V; Qg = 6.5 nC; SO-8 package with separate Kelvin source | SO-8 footprint lacks thermal pad; requires careful layout for thermal management; lower Qg suits ultra-high-frequency use | Select when board space is limited and switching frequency exceeds 1 MHz; verify thermal design due to higher RθJA. |
Compared with IRLR7807ZTRPBF, IRLR8721PBF trades higher gate charge for lower on-resistance-favorable in low-frequency, high-current applications-while SI7850DP-T1-GE3 offers superior high-frequency switching at the cost of reduced thermal performance and no integrated drain pad.
Availability
IRLR7807ZTRPBF is available at Aetrix Electronics and suitable for server CPU voltage regulators, laptop core power supplies, and industrial PLC power modules requiring stable component supply, RoHS-compliant packaging, and long-lifecycle support.
Supply support for IRLR7807ZTRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices, with global manufacturing and quality certification to ISO/TS 16949 and IECQ QC 080000.
The IRLR7807ZTRPBF belongs to Infineon's HEXFET® logic-level Power MOSFET product line, engineered specifically for high-efficiency, high-density DC/DC conversion in computing and communications infrastructure where 4.5V gate drive and avalanche ruggedness are mandatory.
FAQ
Is IRLR7807ZTRPBF suitable for 3.3V gate drive?
No. While optimized for 4.5V logic-level drive, its RDS(on) rises sharply below 4.5V: at VGS = 3.3V, RDS(on) exceeds 25 mΩ (per Fig. 1 transfer curve), increasing conduction loss by >80%. It requires ≥4.5V gate voltage for specified performance.
What is the maximum recommended PCB copper area for thermal relief?
For optimal thermal performance, the exposed drain pad must be soldered to ≥400 mm² of 2-oz copper (≥70 µm thick) on the primary side, with ≥4 thermal vias (0.3 mm diameter, filled or plated) connecting to inner ground/power planes. This achieves near-datasheet RθJC = 3.75°C/W.
Does IRLR7807ZTRPBF have built-in ESD protection?
No. The device has no integrated gate protection diodes. Gate oxide is rated for ±20V VGS, and ESD events >2 kV HBM can cause latent damage. External 10 Ω gate resistor and TVS clamp (e.g., SMAJ5.0A) between gate and source are required in production designs.
Can it replace IRLR7807ZPbF in existing designs?
Yes. IRLR7807ZTRPBF is the tape-and-reel (TR) version of IRLR7807ZPbF, sharing identical die, parametric specs, and package. The "TR" suffix denotes packaging format only-not functional or reliability differences-and supports automated SMT placement without design change.
IRLR7807ZTRPBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®
- Package/Case:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 43A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 13.8mOhm @ 15A, 10V
- Vgs(th) (Max) @ Id:
- 2.25V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 11 nC @ 4.5 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 780 pF @ 15 V
- FET Feature:
- -
- Power Dissipation (Max):
- 40W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TO-252AA (DPAK)
IRLR7807ZTRPBF FAQ
1.How can I place an order for IRLR7807ZTRPBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRLR7807ZTRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRLR7807ZTRPBF reliable?
The price and inventory of IRLR7807ZTRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRLR7807ZTRPBF is usually 5 days.
3.What payment methods are accepted for IRLR7807ZTRPBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRLR7807ZTRPBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRLR7807ZTRPBF?
IRLR7807ZTRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRLR7807ZTRPBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRLR7807ZTRPBF?
For technical support, including IRLR7807ZTRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRLR7807ZTRPBF requirements.
6.How does Aetrix verify that IRLR7807ZTRPBF is sourced from the original manufacturer or authorized distributors?
All IRLR7807ZTRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRLR7807ZTRPBF meets industry standards.
7.What is the process for return or replacement of IRLR7807ZTRPBF?
All IRLR7807ZTRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRLR7807ZTRPBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRLR7807ZTRPBF part is unused and in its original packaging.
Return procedure for IRLR7807ZTRPBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
IRLR7807ZTRPBF Tags
-
BSZ180P03NS3EGATMA1
Infineon Technologies
-
SIRA14DP-T1-GE3
Vishay Siliconix
-
AO4419
Alpha & Omega Semiconductor Inc.
-
SISA14BDN-T1-GE3
Vishay Siliconix
-
PSMN9R5-30YLC,115
Nexperia USA Inc.
-
BUK9Y21-40E,115
Nexperia USA Inc.
-
RTQ035N03HZGTR
Rohm Semiconductor
-
FDMS7680
onsemi
-
RQ3E180BNTB
Rohm Semiconductor
-
STL6N2VH5
STMicroelectronics
-
DMPH4029LFGQ-7
Diodes Incorporated
-
DMT6015LSS-13
Diodes Incorporated
Tech Hub
Guide to electronic component obsolescence covering EOL risk, PCN/PDN notices, last-time buy planning, replacement options, form-fit-function validation, counterfeit risk and BOM lifecycle management.
18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…
Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…
Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…
A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…
Engineering guide to Raspberry Pi alternatives, covering chip-level differences, Orange Pi, ROCK, Jetson, Banana Pi, NanoPi, Compute Module, Pico, GPIO, camera, HAT compatibility, and replacement risks…
Engineering guide to dynamic load response testing for high-current buck converters, covering load step setup, slew rate, Vcore undershoot, overshoot, recovery time, probe location, output capacitors a…
Engineering guide to output capacitor selection for ASIC Vcore rails, covering bulk capacitors, polymer capacitors, MLCC decoupling, DC bias, ESR, ESL, placement, transient response and substitution ri…
Engineering guide to high-current ASIC Vcore rails, covering 12-phase buck architecture, PMBus control, dynamic load testing, output capacitor networks, smart power stage selection, thermal design and …
Voltage regulator guide covering linear, LDO, 7805, Zener, adjustable, buck, VRM and alternator regulators, with design checks, testing methods, troubleshooting and datasheet-based selection.
