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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRLR7807ZTRRPBF

Name: IRLR7807ZTRRPBF
Brand: Infineon Technologies
SKU: IRLR7807ZTRRPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRLR7807ZTRRPBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: IRLR7807ZTRRPBF.pdf

Description:: MOSFET N-CH 30V 43A DPAK

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Product details

Overview

IRLR7807ZTRRPBF from Infineon Technologies is a 30V N-channel HEXFET Power MOSFET in D-Pak (TO-252) package, optimized for high-frequency synchronous buck converters in CPU power delivery. It delivers 13.8 mΩ R_DS(on) at V_GS = 4.5 V, 7.0 nC total gate charge, and 12 A continuous drain current at T_C = 25°C - enabling efficient low-voltage, high-current point-of-load regulation.

For engineers reviewing the IRLR7807ZTRRPBF datasheet, IRLR7807ZTRRPBF pinout, IRLR7807ZTRRPBF application, or IRLR7807ZTRRPBF equivalent, key selection criteria include its ultra-low gate impedance, fully characterized avalanche capability, body diode reverse recovery performance (Q_rr = 14–21 nC), and thermal resistance (R_θJC = 3.75°C/W) for thermally constrained PCB layouts.

Technical Context

This MOSFET employs planar silicon HEXFET architecture with optimized cell pitch and trench-free process to achieve low R_DS(on) while maintaining robust unclamped inductive switching (UIS) capability up to 120 mJ at T_J = 25°C. Its gate threshold voltage (V_GS(th) = 1.35–2.25 V) ensures reliable turn-on with 3.3 V and 5 V logic-level drivers.

The device integrates an intrinsic body diode with V_SD ≤ 1.0 V at 12 A and t_rr = 23–35 ns, supporting fast synchronous rectification. Its C_iss/C_oss/C_rss values (780/180/100 pF at V_DS = 15 V) are tuned for minimal switching loss and reduced dv/dt-induced shoot-through risk in high-side control configurations.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - supports 24 V input rails with margin for transient spikes in server VRMs
R_DS(on) max @ 4.5 V	13.8 mΩ - enables <1 W conduction loss at 12 A DC load in compact D-Pak footprint
Q_g typ.	7.0 nC - reduces gate drive power and allows use of low-current PWM controllers
I_D cont. @ T_C = 25°C	30 A - provides headroom for peak CPU current bursts without derating
R_θJC	3.75 °C/W - permits direct heatsinking via PCB copper pour for thermal management
E_AS	120 mJ - withstands single-pulse inductive energy during hard-switching faults
Q_rr	14–21 nC - minimizes cross-conduction loss and stress on complementary high-side FET

Pinout & Package

IRLR7807ZTRRPBF uses the D-Pak (TO-252) surface-mount package with exposed drain pad for thermal and electrical connection. The three-terminal configuration supports high-current source-sink operation with low-inductance layout.

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	Main current path output terminal	Electrically and thermally connected to exposed copper pad - must be soldered to large PCB copper area for heat dissipation and low-impedance return path
Source	Reference node for gate drive and current sensing	Provides Kelvin connection point for accurate R_DS(on)-based current monitoring in synchronous buck low-side position
Gate	Control input for channel modulation	Low-input-capacitance node (C_iss = 780 pF) compatible with standard gate drivers; Q_gd/Q_gs1 ratio minimized to suppress C_dv/dt turn-on

Key Features

Feature	Design Value
Ultra-low R_DS(on) at 4.5 V	13.8 mΩ enables >95% efficiency in 12 A, 1.0 V output VRMs without forced air cooling
Fully characterized avalanche rating	120 mJ E_AS at T_J = 25°C ensures robustness against inductive switching transients in non-isolated DC/DC converters
Optimized body diode recovery	Q_rr = 14–21 nC and t_rr = 23–35 ns reduce cross-conduction loss and EMI in synchronous rectification
Lead-free and RoHS-compliant	Meets IPC-J-STD-020D reflow profile requirements for Pb-free assembly with peak temperature up to 260°C

Applications

Server CPU Voltage Regulator Modules

Laptop Core Power Supplies

Use Scenario: High-current, multi-phase buck converter delivering 0.8–1.5 V at up to 120 A to modern x86 processors.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier in each phase leg, switched at 300–1000 kHz with precise dead-time control.

Use Value: 13.8 mΩ R_DS(on) at 4.5 V reduces conduction loss by 32% vs. legacy 20 mΩ devices, lowering thermal density in 1U chassis.

Use Scenario: Single-phase buck regulator powering GPU or SoC core rail in space-constrained ultrabooks.

IC Role / Device Role / Timing Role: Low-side switch operating with integrated controller IC (e.g., ISL95836) under dynamic load steps up to 10 A/µs.

Use Value: 7.0 nC Q_g enables clean 500 kHz switching with minimal gate driver overhead, preserving battery runtime.

Industrial PLC I/O Power Rails

Networking ASIC Core Supplies

Use Scenario: Distributed 3.3 V or 5 V power rail generation for FPGA and microcontroller subsystems in programmable logic controllers.

IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier in isolated flyback or non-isolated buck converter with wide ambient temperature range (-40°C to +85°C).

Use Value: Stable V_GS(th) (1.35–2.25 V) and low R_DS(on) drift (<2× over -40°C to +125°C) ensure consistent regulation across industrial temperature extremes.

Use Scenario: Point-of-load regulator supplying 0.9–1.2 V to high-speed networking ASICs (e.g., Broadcom Tomahawk) with tight voltage tolerance (±15 mV).

IC Role / Device Role / Timing Role: Low-side FET in multiphase buck stage, synchronized to master clock for ripple cancellation.

Use Value: 3.75°C/W R_θJC allows direct thermal coupling to heatsink via PCB, maintaining junction temperature <105°C under full load at 70°C ambient.

Equivalent & Alternatives

The following parts are listed as comparable options for similar low-side synchronous rectifier applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRLR8726PbF	R_DS(on) = 7.0 mΩ @ 4.5 V; Q_g = 14.5 nC; higher conduction efficiency but increased gate drive loss	Better suited for fixed-frequency, high-duty-cycle applications where conduction loss dominates	Select when system operates >70% load continuously and gate driver can support 14.5 nC charge
SI7850DP-T1-GE3	R_DS(on) = 12.5 mΩ @ 4.5 V; Q_g = 6.5 nC; SO-8 package with higher R_θJA (62°C/W)	Preferred for space-limited designs requiring dual-FET integration in same footprint	Choose for mixed-signal boards where SO-8 routing simplifies layout but thermal budget allows higher R_θJA

Compared with IRLR7807ZTRRPBF, IRLR8726PbF trades higher gate charge for lower R_DS(on), favoring high-current steady-state operation, while SI7850DP-T1-GE3 offers identical gate drive efficiency in a smaller package but requires more aggressive PCB thermal design due to inferior junction-to-ambient thermal resistance.

Availability

IRLR7807ZTRRPBF is available at Aetrix Electronics and suitable for server CPU VRMs, laptop core power supplies, and industrial PLC I/O power rails requiring stable component supply and long-term production continuity.

Supply support for IRLR7807ZTRRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor leader specializing in power management, automotive, and industrial control ICs and discrete devices, with global manufacturing and quality certification to ISO/TS 16949 and IATF 16949.

This device belongs to Infineon's HEXFET Power MOSFET product line, engineered specifically for high-efficiency, high-frequency DC/DC conversion in computing and communications infrastructure where low R_DS(on), fast switching, and ruggedness are critical.

FAQ

What is the maximum continuous drain current at 100°C case temperature?

The IRLR7807ZTRRPBF supports 17 A continuous drain current at T_C = 100°C, as specified in the Absolute Maximum Ratings table. This value reflects thermal derating due to reduced channel conductivity and increased R_DS(on) at elevated temperatures, and assumes proper PCB copper area for heat spreading per the recommended layout guidelines.

Does this MOSFET require a gate resistor for stability in synchronous buck operation?

A small gate resistor (typically 1–5 Ω) is recommended to dampen ringing caused by gate loop inductance and prevent spurious turn-on from dv/dt coupling. The device's low Q_gd/Q_gs1 ratio inherently improves immunity, but external resistance remains necessary for robust operation at >500 kHz switching frequencies with fast-edge drivers.

Can IRLR7807ZTRRPBF be used in linear regulator mode?

No - it is not rated or characterized for linear (ohmic) operation. Its Safe Operating Area (SOA) curve shows limited DC capability beyond 100 µs pulses, and sustained operation in the linear region risks thermal runaway due to positive temperature coefficient of R_DS(on) and insufficient thermal mass in the D-Pak package.

Is the body diode suitable for reverse recovery in discontinuous conduction mode (DCM)?

Yes - the body diode is fully characterized with t_rr = 23–35 ns and Q_rr = 14–21 nC at I_F = 12 A, making it suitable for DCM operation in buck-derived topologies. However, zero-voltage switching (ZVS) must be avoided unless paired with active snubbing, as uncontrolled reverse recovery can induce voltage overshoot exceeding V_DS rating.

IRLR7807ZTRRPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 43A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 13.8mOhm @ 15A, 10V

Vgs(th) (Max) @ Id:: 2.25V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 11 nC @ 4.5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 780 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 40W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-252AA (DPAK)

IRLR7807ZTRRPBF FAQ

1.How can I place an order for IRLR7807ZTRRPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRLR7807ZTRRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRLR7807ZTRRPBF reliable?

The price and inventory of IRLR7807ZTRRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRLR7807ZTRRPBF is usually 5 days.

3.What payment methods are accepted for IRLR7807ZTRRPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRLR7807ZTRRPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRLR7807ZTRRPBF?

IRLR7807ZTRRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRLR7807ZTRRPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRLR7807ZTRRPBF?

For technical support, including IRLR7807ZTRRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRLR7807ZTRRPBF requirements.

6.How does Aetrix verify that IRLR7807ZTRRPBF is sourced from the original manufacturer or authorized distributors?

All IRLR7807ZTRRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRLR7807ZTRRPBF meets industry standards.

7.What is the process for return or replacement of IRLR7807ZTRRPBF?

All IRLR7807ZTRRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRLR7807ZTRRPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRLR7807ZTRRPBF part is unused and in its original packaging.

Return procedure for IRLR7807ZTRRPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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