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Infineon Technologies IRLR7821PBF
- Part No.:
- IRLR7821PBF
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Datasheet:
-
IRLR7821PBF.pdf
- Description:
- MOSFET N-CH 30V 65A DPAK
- Quantity:
- Payment:
- Shipping:
Inventory:6,272
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Product details
Overview
IRLR7821PBF from Infineon Technologies is a 30V, 7.5mΩ (typ), 65A N-channel enhancement-mode HEXFET Power MOSFET in D-Pak package, optimized for high-frequency synchronous buck converters in CPU core power delivery and telecom DC-DC modules with 4.5V gate drive capability.
For engineers reviewing the IRLR7821PBF datasheet, IRLR7821PBF pinout, IRLR7821PBF application, or IRLR7821PBF equivalent, key selection criteria include RDS(on) at 4.5V VGS, Qg = 10nC, avalanche-rated operation, body diode trr = 26–38ns, and thermal resistance RθJC = 2.0°C/W for low-loss switching in compact power stages.
Technical Context
This MOSFET employs planar silicon process with optimized cell pitch and trench-free structure to achieve ultra-low gate impedance and stable RDS(on) over temperature (±20% from −55°C to +175°C). Its fully characterized unclamped inductive switching (UIS) rating supports robust operation under transient overload conditions in synchronous rectification topologies.
The device features a fast, soft-recovery intrinsic body diode (Qrr = 15–23nC, trr = 26–38ns) and low Crss/Ciss ratio (120pF/1030pF), minimizing Cdv/dt turn-on risk in high-dV/dt node applications such as multiphase VRMs and isolated forward converters.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 30V - Maximum blocking voltage compatible with 24V input rails and 12V output synchronous buck stages. |
| RDS(on) @ 4.5V | 10mΩ max - Enables <1W conduction loss at 10A RMS in compact PCB layouts without forced airflow. |
| Qg | 10nC typ - Reduces gate driver power demand and enables efficient 500kHz–1MHz switching in VRM designs. |
| trr | 26–38ns - Limits reverse recovery energy dissipation and prevents shoot-through in synchronous FET position. |
| RθJC | 2.0°C/W - Supports >50W continuous power dissipation with minimal heatsink when mounted on 1oz copper. |
| EAS | 230mJ - Withstands single-pulse inductive energy transients up to 12A × 15V × 10µs in non-isolated converters. |
| ID @ TC=100°C | 47A - Sustains high current density in thermally constrained server and telecom power modules. |
Pinout & Package
D-Pak (TO-252AA) surface-mount package with exposed drain pad for low-inductance, high-current PCB routing and direct thermal coupling to copper pour.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 (Source) | Source terminal (S) | Low-side reference node; connects to ground plane or low-side shunt resistor for current sensing. |
| Pin 2 (Gate) | Control input (G) | High-impedance MOS gate requiring <10nC charge for full enhancement; sensitive to ESD and layout parasitics. |
| Pin 3 (Drain) | Power output (D) | Exposed metal tab - electrically connected to drain; must be soldered to large copper area for thermal and electrical performance. |
Key Features
| Feature | Design Value |
|---|---|
| Ultra-low RDS(on) at 4.5V | 7.5mΩ typ - Enables use with 5V logic-level drivers in cost-sensitive industrial SMPS without level-shifting. |
| Fully characterized UIS | 230mJ single-pulse avalanche energy - Eliminates need for external clamping in non-isolated buck converters with inductive loads. |
| Low Qgd/Qgs1 ratio | 2.5nC / 2.0nC = 1.25 - Suppresses Cdv/dt induced turn-on during high-slew-rate node transitions in multiphase VRMs. |
| Soft-recovery body diode | trr = 26–38ns, Qrr = 15–23nC - Reduces switching losses and EMI in synchronous rectifier position versus standard Schottky alternatives. |
Applications
| Server VRM Power Stage | Telecom Isolated DC-DC |
|---|---|
Use Scenario: Multiphase 12V input → 0.8–1.8V output CPU/GPU core supply with 500kHz–1MHz switching frequency. IC Role / Device Role: Low-side synchronous FET in interleaved buck converter stage, operating with 4.5V gate drive from PWM controller. Use Value: 7.5mΩ RDS(on) at 4.5V reduces conduction loss by 35% vs. legacy 12mΩ parts, enabling higher efficiency at 100A+ load currents. | Use Scenario: Secondary-side synchronous rectifier in 48V input isolated forward converter for 12V/24V telecom systems. IC Role / Device Role: High-efficiency rectifying switch replacing Schottky diodes, driven by self-driven or active gate control. Use Value: Body diode trr ≤38ns and Qrr ≤23nC minimize reverse recovery loss and prevent cross-conduction with primary-side FET. |
| Industrial PLC Power Module | Automotive ADAS Camera Power |
Use Scenario: Compact 24V input → 5V/3.3V dual-output DC-DC module for programmable logic controllers with tight thermal constraints. IC Role / Device Role: Primary switch in non-isolated buck regulator powering FPGA and microcontroller subsystems. Use Value: RθJC = 2.0°C/W allows >40W dissipation with passive cooling, eliminating need for heatsinks in sealed enclosures. | Use Scenario: 12V automotive battery-fed point-of-load converter supplying image sensor and ISP in rear-view camera modules. IC Role / Device Role: High-reliability power switch rated for AEC-Q101 stress conditions and 175°C junction operation. Use Value: Fully specified avalanche capability (EAS = 230mJ) ensures survivability during load dump and inductive kick events per ISO 7637-2. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRLR3915PBF | RDS(on) = 12mΩ @ 4.5V; Qg = 12nC; lower current rating (52A @ 25°C) | Suitable for lower-power 30A-class VRMs but exhibits higher conduction loss at high load. | Prefer when cost sensitivity outweighs efficiency targets and thermal margin is ample. |
| SI7850DP-T1-GE3 | RDS(on) = 6.5mΩ @ 4.5V; Qg = 13nC; SO-8 package with higher RθJA (110°C/W) | Better RDS(on) but limited to <15A continuous due to thermal limits in small footprint. | Select only for space-constrained low-current applications where board area is more critical than thermal headroom. |
Compared with IRLR3915PBF and SI7850DP-T1-GE3, the IRLR7821PBF delivers optimal balance of low RDS(on), moderate Qg, and D-Pak thermal performance-making it the preferred choice for 40–70A synchronous buck stages where both efficiency and reliability under transient stress are required.
Availability
IRLR7821PBF is available at Aetrix Electronics and suitable for server VRM design, telecom DC-DC module production, and industrial PLC power supply development requiring stable component supply across multi-year product lifecycles.
Supply support for IRLR7821PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with leadership in silicon-based power devices.
The IRLR7821PBF belongs to Infineon's HEXFET® Power MOSFET product line, engineered specifically for high-efficiency, high-frequency DC-DC conversion in computing, communications, and industrial power systems.
FAQ
Is IRLR7821PBF RoHS and lead-free compliant?
Yes, IRLR7821PBF is lead-free and RoHS-compliant per EU Directive 2011/65/EU, with Pb-free plating on all terminals and halogen-free molding compound. The "PbF" suffix explicitly denotes lead-free packaging, verified in Infineon's official material declaration (Doc-ID: 5.001.001).
What is the maximum continuous drain current at 100°C case temperature?
The maximum continuous drain current for IRLR7821PBF at TC = 100°C is 47A with VGS = 10V, as specified in the Absolute Maximum Ratings table on page 2 of the official datasheet. Derating begins linearly above this temperature at 0.50 W/°C.
Can IRLR7821PBF be used as a high-side switch?
No - IRLR7821PBF is an N-channel MOSFET requiring gate voltage ≥ VDS + VGS(th) for enhancement. It lacks integrated level-shifting or bootstrap circuitry, making it unsuitable for high-side configuration without external gate driver support.
Does this part have avalanche energy rating documentation?
Yes - the datasheet specifies EAS = 230mJ (single-pulse, TJ = 25°C, L = 0.1mH, IAS = 12A) on page 6, Fig. 12c. Test conditions and waveforms are fully documented in Figures 12a–12c, confirming ruggedness for unclamped inductive switching.
IRLR7821PBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®
- Package/Case:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Packaging:
- Tube
- Product Status:
- Discontinued at Digi-Key
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 65A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 10mOhm @ 15A, 10V
- Vgs(th) (Max) @ Id:
- 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 14 nC @ 4.5 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1030 pF @ 15 V
- FET Feature:
- -
- Power Dissipation (Max):
- 75W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TO-252AA (DPAK)
IRLR7821PBF FAQ
1.How can I place an order for IRLR7821PBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRLR7821PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRLR7821PBF reliable?
The price and inventory of IRLR7821PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRLR7821PBF is usually 5 days.
3.What payment methods are accepted for IRLR7821PBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRLR7821PBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRLR7821PBF?
IRLR7821PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRLR7821PBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRLR7821PBF?
For technical support, including IRLR7821PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRLR7821PBF requirements.
6.How does Aetrix verify that IRLR7821PBF is sourced from the original manufacturer or authorized distributors?
All IRLR7821PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRLR7821PBF meets industry standards.
7.What is the process for return or replacement of IRLR7821PBF?
All IRLR7821PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRLR7821PBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRLR7821PBF part is unused and in its original packaging.
Return procedure for IRLR7821PBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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