Infineon Technologies IRLR7821TRLPBF
- Part No.:
- IRLR7821TRLPBF
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Datasheet:
-
IRLR7821TRLPBF.pdf
- Description:
- MOSFET N-CH 30V 65A DPAK
- Quantity:
- Payment:

- Shipping:

Inventory:8,389
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Product details
Overview
IRLR7821TRLPBF from Infineon Technologies is a 30V, 7.5 mΩ (typ), 65A N-channel enhancement-mode HEXFET Power MOSFET in D-Pak (TO-252) package, optimized for high-frequency synchronous buck converters in CPU core power delivery and telecom DC-DC modules with 4.5V gate drive capability.
For engineers reviewing the IRLR7821TRLPBF datasheet, IRLR7821TRLPBF pinout, IRLR7821TRLPBF application, or IRLR7821TRLPBF equivalent, key selection criteria include RDS(on) at 4.5V VGS, total gate charge (10 nC typ), avalanche energy rating (230 mJ), body diode reverse recovery charge (15–23 nC), and thermal resistance RθJC (2.0°C/W).
Technical Context
This MOSFET employs planar silicon HEXFET architecture with fully characterized unclamped inductive switching (UIS) capability and tightly specified gate threshold voltage (1.0–2.3 V). Its low Qgd/Qgs1 ratio minimizes Cdv/dt turn-on risk in high-dV/dt synchronous rectifier nodes.
Designed for hard-switched topologies, it delivers stable RDS(on) up to 175°C junction temperature and supports fast switching with tr = 4.2 ns and tf = 3.2 ns at VDD = 15 V, ID = 12 A, and RG = 0.01 Ω - critical for minimizing conduction and switching losses in sub-1 MHz converter designs.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 30 V - maximum blocking voltage compatible with 24 V input rails and transient overvoltage margin in telecom/industrial DC-DC stages |
| RDS(on) @ 4.5 V | 7.5 mΩ (typ) - enables <1 W conduction loss at 40 A RMS in CPU VRMs using 4.5 V gate drive from controller ICs |
| Qg | 10 nC (typ) - determines gate driver current requirement and switching speed; enables efficient 500 kHz–1 MHz operation |
| EAS | 230 mJ - specifies single-pulse avalanche robustness during load dump or short-circuit events without failure |
| RθJC | 2.0 °C/W - allows direct heatsinking to PCB copper or external heatsink; supports >65 A continuous current at TC = 100°C |
| Qrr | 15–23 nC - quantifies body diode reverse recovery loss transferred to high-side FET; impacts efficiency and EMI in synchronous rectification |
| Ciss | 1030 pF - influences gate drive loop stability and Miller effect; requires careful layout to avoid oscillation at high dV/dt |
Pinout & Package
IRLR7821TRLPBF uses the standard D-Pak (TO-252AA) surface-mount package with exposed drain pad for thermal and electrical connection. The package features three leads: Gate (G), Drain (D), and Source (S), with Drain electrically connected to the tab.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| G | Gate control terminal | Receives PWM signal from controller; low input capacitance (Ciss = 1030 pF) reduces driver loading |
| D | Drain (high-side switch node) | Connected to PCB thermal pad; carries full load current and sees full input-to-output voltage swing |
| S | Source (power ground reference) | Provides return path for load current; used as reference for gate drive and current sensing in low-side configuration |
Key Features
| Feature | Design Value |
|---|---|
| Ultra-low RDS(on) at 4.5 V | 7.5 mΩ typ - eliminates need for gate boosters in 5 V logic-level systems, simplifying VRM design |
| Fully characterized avalanche | 230 mJ single-pulse EAS - ensures reliable operation under inductive switching stress without derating |
| Low Qgd/Qgs1 ratio | 2.5 nC / 2.0 nC = 1.25 - suppresses Cdv/dt induced turn-on in synchronous rectifier position |
| Optimized body diode | Qrr = 15–23 nC, trr = 26–38 ns - reduces cross-conduction loss and EMI in high-frequency buck converters |
Applications
| Server CPU Voltage Regulator | Telecom 48 V Input DC-DC Converter |
|---|---|
Use Scenario: High-current, multi-phase buck converter supplying 0.8–1.5 V to modern x86 processors with dynamic load steps up to 300 A/µs. IC Role / Device Role: Low-side synchronous rectifier MOSFET handling continuous 65 A and pulsed 260 A source current via integrated body diode. Use Value: 7.5 mΩ RDS(on) at 4.5 V enables >92% efficiency at 100 A output while maintaining <40°C case rise on 2 oz copper. | Use Scenario: Isolated forward or active-clamp forward converter with secondary-side synchronous rectification for 12 V or 5 V outputs from 48 V telecom rectified bus. IC Role / Device Role: Secondary-side power switch operating at 300–500 kHz, subjected to 48 V–60 V drain swings and fast body diode commutation. Use Value: 230 mJ EAS and 26–38 ns trr ensure robustness against transformer leakage spikes and reduce snubber losses. |
| Industrial PLC Power Module | Automotive ADAS Domain Controller Supply |
Use Scenario: Non-isolated buck converter powering FPGA, DSP, and I/O interfaces in programmable logic controllers with wide ambient temperature range (−40°C to +85°C). IC Role / Device Role: Primary power switch in 24 V input → 3.3 V/5 V/12 V multi-rail supply, rated for 100% load at TC = 100°C. Use Value: RθJC = 2.0°C/W and 175°C max TJ allow full-rated current without forced air, reducing system cooling cost. | Use Scenario: Compact 12 V input → 1.0 V/1.8 V core supply for radar processing SoCs in automotive ADAS domain controllers with ASIL-B functional safety requirements. IC Role / Device Role: Low-side FET in multiphase VRM delivering up to 120 A with tight voltage regulation and fast transient response. Use Value: Tight VGS(th) distribution (1.0–2.3 V) and low ∆VGS(th)/°C (−5.3 mV/°C) ensure predictable turn-on timing across automotive temperature range. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRLR3915TRLPBF | RDS(on) = 12 mΩ @ 4.5 V; Qg = 14 nC; VDS = 30 V | Higher conduction loss; suitable only for ≤40 A loads at same frequency | Select when lower gate charge sensitivity or higher avalanche margin is required over RDS(on) |
| SI7850DP-T1-GE3 | RDS(on) = 6.2 mΩ @ 4.5 V; Qg = 12.5 nC; SO-8 package; no exposed drain pad | Limited thermal performance (RθJA ≈ 62°C/W); unsuitable for >35 A continuous | Prefer for space-constrained, lower-current designs where PCB area is more critical than thermal headroom |
Compared with IRLR3915TRLPBF and SI7850DP-T1-GE3, IRLR7821TRLPBF offers the optimal balance of low RDS(on), moderate Qg, and superior thermal dissipation in D-Pak - making it the preferred choice for high-current, thermally constrained synchronous buck stages above 50 A.
Availability
IRLR7821TRLPBF is available at Aetrix Electronics and suitable for server CPU voltage regulators, telecom 48 V DC-DC converters, and industrial PLC power modules requiring stable component supply and long-term production continuity.
Supply support for IRLR7821TRLPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs and discrete devices.
The HEXFET Power MOSFET product line targets high-efficiency, high-reliability power conversion in computing, telecom, and industrial applications - emphasizing low RDS(on), fast switching, and rugged avalanche performance.
FAQ
Is IRLR7821TRLPBF lead-free and RoHS-compliant?
Yes, IRLR7821TRLPBF is lead-free and RoHS-compliant per EU Directive 2011/65/EU. The "PbF" suffix in its original part number (IRLR7821PbF) explicitly denotes lead-free termination, and Infineon confirms full compliance with JEDEC J-STD-609A Class 3 marking standards and halogen-free material content.
Can IRLR7821TRLPBF be used as a high-side switch?
No - IRLR7821TRLPBF is an N-channel MOSFET requiring gate voltage ≥ VDS + VGS(th) for full enhancement. It lacks integrated bootstrap circuitry or level-shifting capability. For high-side switching in buck or half-bridge topologies, a dedicated high-side driver or P-channel alternative (e.g., IRLR7833) is required.
What is the maximum recommended PCB copper area for thermal relief?
Infineon recommends a minimum 400 mm² (20 mm × 20 mm) 2-oz copper pour connected directly to the exposed drain pad via ≥6 thermal vias (0.3 mm diameter, filled or plated) to achieve the rated RθJC = 2.0°C/W. Smaller pads increase RθJA significantly - e.g., 100 mm² raises RθJA to ~75°C/W.
Does IRLR7821TRLPBF require gate resistors for stability?
Yes - a series gate resistor (typically 2.2–10 Ω) is required to dampen ringing caused by Lg–Ciss resonance and prevent spurious turn-on due to high dV/dt. Layout best practices include minimizing gate loop area and routing the gate trace away from high-dV/dt drain paths to avoid coupling.
IRLR7821TRLPBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®
- Package/Case:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 65A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 10mOhm @ 15A, 10V
- Vgs(th) (Max) @ Id:
- 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 14 nC @ 4.5 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1030 pF @ 15 V
- FET Feature:
- -
- Power Dissipation (Max):
- 75W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TO-252AA (DPAK)
IRLR7821TRLPBF FAQ
1.How can I place an order for IRLR7821TRLPBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRLR7821TRLPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
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The price and inventory of IRLR7821TRLPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRLR7821TRLPBF is usually 5 days.
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Once your IRLR7821TRLPBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRLR7821TRLPBF?
For technical support, including IRLR7821TRLPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRLR7821TRLPBF requirements.
6.How does Aetrix verify that IRLR7821TRLPBF is sourced from the original manufacturer or authorized distributors?
All IRLR7821TRLPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRLR7821TRLPBF meets industry standards.
7.What is the process for return or replacement of IRLR7821TRLPBF?
All IRLR7821TRLPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRLR7821TRLPBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRLR7821TRLPBF part is unused and in its original packaging.
Return procedure for IRLR7821TRLPBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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