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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRLR7821TRPBF

Name: IRLR7821TRPBF
Brand: Infineon Technologies
SKU: IRLR7821TRPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRLR7821TRPBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: IRLR7821TRPBF.pdf

Description:: MOSFET N-CH 30V 65A DPAK

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Product details

Overview

IRLR7821TRPBF from Infineon Technologies is a 30V, 7.5mΩ (typ), 65A N-channel D-Pak power MOSFET optimized for high-frequency synchronous buck converters in CPU core voltage regulation and telecom DC-DC modules. It features ultra-low gate charge (10nC typ), 2.0°C/W junction-to-case thermal resistance, and fully characterized avalanche capability (230mJ single-pulse).

For engineers reviewing the IRLR7821TRPBF datasheet, IRLR7821TRPBF pinout, IRLR7821TRPBF application, or IRLR7821TRPBF equivalent, key selection criteria include R_DS(on) at 4.5V V_GS, Q_g/Q_gd ratio for C_dv/dt immunity, body diode reverse recovery (Q_rr = 15–23nC), and SOA limits under repetitive switching at T_C = 100°C.

Technical Context

This HEXFET device uses planar vertical DMOS structure with optimized cell pitch and trench-free gate oxide to achieve low R_DS(on) while maintaining robust 30V breakdown (BVDSS ≥ 30V) and tight V_GS(th) distribution (1.0–2.5V). Its gate threshold exhibits negative temperature coefficient (−5.3mV/°C), enabling stable current sharing in parallel configurations.

Designed for synchronous rectification, it delivers low conduction loss (P_cond = I_rms² × R_DS(on)) and minimized switching loss via low Q_gd (2.5nC) and Q_oss (8.5nC), critical for efficiency above 500kHz in isolated forward and LLC topologies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	30V - Maximum blocking voltage compatible with 24V input rails and transient overvoltage margins in telecom systems.
R_DS(on) @ 4.5V	10mΩ max - Enables efficient operation directly from 5V gate drivers without level-shifting in low-voltage synchronous FETs.
Q_g	10nC typ - Reduces gate drive power loss and enables fast turn-on with standard PWM controllers (e.g., IR35201).
Q_gd/Q_gs1	2.5nC / 2.0nC - Low ratio minimizes C_dv/dt induced turn-on risk in high-dV/dt node applications like half-bridge outputs.
T_J max	+175°C - Supports continuous operation in thermally constrained server VRMs and industrial DC-DC modules.
E_AS	230mJ - Withstands unclamped inductive energy during startup/fault conditions without failure in synchronous rectifier circuits.
Q_rr	15–23nC - Limits cross-conduction losses and stress on control FET during body diode commutation in buck converters.

Pinout & Package

D-Pak (TO-252AA) package with exposed drain pad for low thermal resistance (R_θJC = 2.0°C/W) and high-current PCB mounting.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Source)	Source terminal (S)	Low-side reference node; connects to ground plane or output inlay for minimal loop inductance.
Pin 2 (Gate)	Control input (G)	High-impedance MOS gate requiring <2.0nC pre-threshold charge for reliable 4.5V logic-level drive.
Pin 3 (Drain)	Power output (D)	Exposed copper pad tied to internal drain; must be soldered to large copper area for thermal and current handling.

Key Features

Feature	Design Value
Ultra-low R_DS(on) at 4.5V	10mΩ max enables direct 5V gate drive in synchronous rectifiers without bootstrap complexity.
Low Q_gd/Q_gs1 ratio	1.25 supports stable operation in high-dV/dt nodes (e.g., secondary side of flyback or LLC converters).
Characterized avalanche energy	230mJ single-pulse rating allows safe operation under unclamped inductive switching stress.
Optimized body diode	Q_rr = 15–23nC and t_rr = 26–38ns reduce shoot-through risk and improve light-load efficiency.
Lead-free D-Pak	RoHS-compliant TO-252AA package with 2.0°C/W R_θJC supports high-power density designs up to 75W per device.

Applications

Server CPU Core VRM

Telecom 48V-to-12V Isolated DC-DC

Use Scenario: High-current, multi-phase buck converter supplying 1.0V/150A to modern x86 processors with <1% voltage ripple.

IC Role / Device Role / Timing Role: Synchronous FET operating at 500–1000kHz, replacing Schottky diodes to reduce conduction loss and improve efficiency >92%.

Use Value: 7.5mΩ R_DS(on) at 4.5V reduces I²R loss by 40% vs. legacy 15mΩ devices, lowering thermal load on VRM heatsinks.

Use Scenario: Secondary-side synchronous rectifier in active-clamp forward converter delivering 12V/20A from 48V telecom input.

IC Role / Device Role / Timing Role: Low-side switch clamped between transformer secondary and output capacitor, driven by self-driven or controller-synchronized gate signal.

Use Value: 230mJ E_AS withstands leakage inductance spikes during reset, eliminating need for external snubbers.

Industrial PLC Power Module

Automotive ADAS Camera Power Supply

Use Scenario: 24V-to-5V non-isolated buck regulator powering FPGA, ADCs, and communication interfaces in programmable logic controllers.

IC Role / Device Role / Timing Role: Main power switch operating at 300kHz with forced-air cooling, supporting 100% duty cycle capability via low R_DS(on).

Use Value: 175°C T_J max and −5.3mV/°C V_GS(th) drift ensure stable current sharing across parallel devices in extended ambient environments.

Use Scenario: Compact 12V-to-3.3V point-of-load converter powering image sensor and ISP in automotive rear-view camera module.

IC Role / Device Role / Timing Role: Synchronous rectifier in monolithic buck IC or discrete controller-based design meeting AEC-Q101 stress requirements.

Use Value: Lead-free D-Pak package passes vibration and thermal cycling tests; Q_rr < 23nC prevents false triggering during cold-crank transients.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRLR3714TRPBF	R_DS(on) = 12mΩ @ 4.5V; Q_g = 12nC; same D-Pak package	Slightly higher conduction loss but identical footprint and drive compatibility	Select when marginally higher R_DS(on) is acceptable for cost-sensitive industrial designs.
SI7842DP-T1-GE3	R_DS(on) = 8.5mΩ @ 4.5V; Q_g = 14nC; SO-8 package (not D-Pak)	Lower R_DS(on) but requires PCB redesign due to different thermal pad layout and pinout	Choose only if board space allows SO-8 integration and thermal performance justifies re-layout.

Compared with IRLR3714TRPBF and SI7842DP-T1-GE3, the IRLR7821TRPBF offers optimal balance of low R_DS(on), moderate Q_g, and D-Pak thermal performance-making it preferred for high-current, high-reliability synchronous rectification where footprint and thermal management are fixed constraints.

Availability

IRLR7821TRPBF is available at Aetrix Electronics and suitable for server VRMs, telecom DC-DC converters, and industrial PLC power modules requiring stable component supply and long-term lifecycle support.

Supply support for IRLR7821TRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to ISO/TS 16949 and IATF 16949.

The IRLR7821TRPBF belongs to Infineon's HEXFET® Power MOSFET product line, engineered specifically for high-efficiency, high-frequency DC-DC conversion in computing, communications, and industrial power systems.

FAQ

Is IRLR7821TRPBF suitable for 4.5V gate drive without level-shifting?

Yes. Its guaranteed R_DS(on) ≤ 10mΩ at V_GS = 4.5V and V_DS = 12A confirms full enhancement at logic-level drive. The 1.0–2.5V V_GS(th) range ensures reliable turn-on even with ±10% supply tolerance, eliminating need for gate boosters in most 5V-controlled buck stages.

What is the maximum continuous drain current at 100°C case temperature?

The datasheet specifies 47A continuous drain current at T_C = 100°C with V_GS = 10V. At 4.5V drive, derating applies: based on R_DS(on) increase and thermal limits, practical continuous current is ~38A with 2-layer 2oz copper and 200mm² exposed drain pad.

Does IRLR7821TRPBF have avalanche ruggedness rated for repetitive operation?

No. While E_AS = 230mJ is specified for single-pulse unclamped inductive switching, the datasheet does not define repetitive avalanche energy (E_AR). Designers must avoid repeated avalanche events and use appropriate snubbing or clamp circuits in hard-switched topologies.

How does its body diode reverse recovery compare to Schottky alternatives?

The body diode has Q_rr = 15–23nC and t_rr = 26–38ns-significantly lower than older MOSFETs but higher than SiC Schottkys. In synchronous rectification, this enables >90% efficiency at 500kHz, though Schottky diodes remain preferable in ultra-light-load (<5% load) scenarios due to zero Q_rr.

IRLR7821TRPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 65A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 10mOhm @ 15A, 10V

Vgs(th) (Max) @ Id:: 1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 14 nC @ 4.5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1030 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 75W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-252AA (DPAK)

IRLR7821TRPBF FAQ

1.How can I place an order for IRLR7821TRPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRLR7821TRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRLR7821TRPBF reliable?

The price and inventory of IRLR7821TRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRLR7821TRPBF is usually 5 days.

3.What payment methods are accepted for IRLR7821TRPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRLR7821TRPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRLR7821TRPBF?

IRLR7821TRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRLR7821TRPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRLR7821TRPBF?

For technical support, including IRLR7821TRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRLR7821TRPBF requirements.

6.How does Aetrix verify that IRLR7821TRPBF is sourced from the original manufacturer or authorized distributors?

All IRLR7821TRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRLR7821TRPBF meets industry standards.

7.What is the process for return or replacement of IRLR7821TRPBF?

All IRLR7821TRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRLR7821TRPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRLR7821TRPBF part is unused and in its original packaging.

Return procedure for IRLR7821TRPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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