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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRLR7821TRRPBF

Name: IRLR7821TRRPBF
Brand: Infineon Technologies
SKU: IRLR7821TRRPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRLR7821TRRPBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: IRLR7821TRRPBF.pdf

Description:: MOSFET N-CH 30V 65A DPAK

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRLR7821TRRPBF from Infineon Technologies is a 30V, 7.5mΩ (typ), 65A N-channel enhancement-mode HEXFET Power MOSFET in D-Pak package, optimized for high-frequency synchronous buck converters in CPU core power delivery and telecom DC-DC modules. It features ultra-low gate charge (10nC typ), 12nC max Qgd, and fully characterized avalanche capability (230mJ single-pulse).

For engineers reviewing the IRLR7821TRRPBF datasheet, IRLR7821TRRPBF pinout, IRLR7821TRRPBF application, or IRLR7821TRRPBF equivalent, key selection criteria include R_DS(on) at 4.5V V_GS, Q_gd/Q_gs1 ratio for C_dv/dt immunity, body diode reverse recovery (Q_rr = 15–23nC), thermal resistance (R_θJC = 2.0°C/W), and safe operating area at 175°C junction temperature.

Technical Context

This MOSFET employs planar silicon HEXFET architecture with optimized cell pitch and trench-free die design to achieve low R_DS(on) while maintaining robust unclamped inductive switching (UIS) performance. Its gate threshold voltage (V_GS(th) = 1.0–2.5V) enables direct drive from 3.3V/5V controllers without level-shifting.

The device integrates a fast, low-V_SD (≤1.0V) intrinsic body diode with t_rr = 26–38ns and Q_rr = 15–23nC-critical for minimizing shoot-through loss in synchronous rectification. Its C_iss/C_oss/C_rss values (1030pF / 360pF / 120pF @ V_DS = 16V) support stable high-frequency operation up to 1MHz in isolated and non-isolated topologies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	30V - Maximum blocking voltage compatible with 24V input rails and transient overvoltage margin in telecom/industrial DC-DC.
R_DS(on) max @ V_GS = 4.5V	10mΩ - Enables <1W conduction loss at 10A RMS in compact 12V→1V CPU VRMs.
Q_g total	10nC (typ) - Reduces gate drive power and allows use with low-current PWM controllers (e.g., ISL63xx, IR352xx).
Q_gd	2.5nC - Low Miller charge minimizes C_dv/dt turn-on risk during high dV/dt node transitions in synchronous FET position.
E_AS	230mJ - Rated avalanche energy supports reliable operation under load dump or startup fault conditions without external snubbers.
R_θJC	2.0°C/W - Enables >65W continuous dissipation with standard heatsink mounting on PCB copper pour.
t_rr	26–38ns - Fast body diode recovery reduces cross-conduction loss and EMI in hard-switched synchronous rectifiers.

Pinout & Package

IRLR7821TRRPBF is housed in a lead-free D-Pak (TO-252AA) surface-mount package with exposed drain pad for thermal and electrical connection. The package supports >100A peak current handling and is compatible with standard reflow profiles per IPC-J-STD-020.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Source)	Source terminal (S)	Low-side reference node; connects to ground plane or output inlay for minimal loop inductance.
Pin 2 (Gate)	Control input (G)	High-impedance MOS gate requiring <10nC charge; routed away from noisy switching nodes to prevent false turn-on.
Pin 3 (Drain)	Power output (D)	Exposed metal tab - electrically and thermally connected to drain; must be soldered to large copper area for thermal management.

Key Features

Feature	Design Value
Ultra-low R_DS(on) at 4.5V	7.5mΩ typ - Enables efficient 3.3V/5V gate drive in space-constrained point-of-load converters without gate boosting.
Fully characterized avalanche	230mJ single-pulse E_AS - Eliminates need for external clamping circuits in high-reliability telecom power supplies.
Low Q_gd/Q_gs1 ratio	2.5nC / 2.0nC = 1.25 - Reduces susceptibility to parasitic turn-on during high dV/dt transitions in synchronous FET applications.
Fast body diode recovery	Q_rr = 15–23nC, t_rr = 26–38ns - Minimizes reverse recovery loss and associated voltage spikes in 500kHz–1MHz synchronous rectifiers.
Lead-free D-Pak package	RoHS-compliant, JEDEC-standard TO-252AA footprint - Ensures compatibility with automated SMT assembly and thermal vias under drain pad.

Applications

Server CPU Core VRM

Telecom 48V→12V Isolated DC-DC

Use Scenario: High-density, multi-phase buck converter delivering 100A+ at ≤1V to modern x86/ARM processors.

IC Role / Device Role: Low-side synchronous FET in interleaved phase-legs, switching at 500kHz–1MHz with 3.3V gate drive.

Use Value: 7.5mΩ R_DS(on) at 4.5V reduces conduction loss by 35% vs. legacy 12mΩ parts, enabling higher efficiency at full load without forced air cooling.

Use Scenario: Secondary-side synchronous rectifier in forward or LLC resonant converters powering base station RF modules.

IC Role / Device Role: 30V-rated rectifying switch replacing Schottky diodes in 12V output stage with 200kHz–1MHz switching.

Use Value: Body diode Q_rr of 15–23nC cuts reverse recovery loss by >60% versus 40V Schottkys, improving system efficiency by 0.8–1.2% at 50% load.

Industrial PLC Power Module

Automotive ADAS Domain Controller Supply

Use Scenario: Input-stage hot-swap and OR-ing controller in redundant 24V industrial power distribution units.

IC Role / Device Role: Low-R_DS(on) pass transistor in active OR-ing circuit with fast fault response (<100ns).

Use Value: 2.0°C/W R_θJC allows 40W continuous dissipation on 2oz copper, supporting >30A current sharing with <50mV drop at ambient 85°C.

Use Scenario: Point-of-load regulator supplying image signal processor (ISP) and radar SoC in 12V automotive domain controllers.

IC Role / Device Role: High-efficiency synchronous buck FET operating in harsh environment (T_J up to 150°C).

Use Value: Guaranteed R_DS(on) ≤12.5mΩ at 100°C and 4.5V V_GS ensures stable regulation across -40°C to +125°C ambient, meeting AEC-Q101 stress requirements.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRLR3714PbF	R_DS(on) = 12mΩ @ 4.5V; Q_g = 12nC; E_AS = 190mJ	Higher conduction loss, lower avalanche rating	Acceptable where board space permits larger thermal solution and transient stress is limited.
SI7842DP-T1-GE3	R_DS(on) = 6.8mΩ @ 4.5V; Q_g = 13.5nC; R_θJC = 1.7°C/W	Lower R_DS(on) but higher Q_g; tighter gate threshold (1.2–2.0V)	Better for ultra-high efficiency at light loads; requires gate driver with higher peak current capability.

Compared with IRLR7821TRRPBF, IRLR3714PbF trades 20% higher R_DS(on) for broader gate drive margin, while SI7842DP-T1-GE3 improves conduction loss by 10% but increases gate drive loss by ~35%-making IRLR7821TRRPBF optimal for balanced high-frequency, medium-power synchronous rectification.

Availability

IRLR7821TRRPBF is available at Aetrix Electronics and suitable for server CPU VRMs, telecom isolated DC-DC converters, and industrial PLC power modules requiring stable component supply, long-lifecycle support, and RoHS-compliant packaging.

Supply support for IRLR7821TRRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to ISO/TS 16949 and IATF 16949.

The HEXFET Power MOSFET product line delivers high-efficiency, high-reliability discrete transistors for demanding power conversion applications-including computing, telecom infrastructure, and industrial automation-where thermal robustness and avalanche ruggedness are critical.

FAQ

Is IRLR7821TRRPBF suitable for 3.3V gate drive in synchronous buck converters?

Yes. With V_GS(th) ranging from 1.0V to 2.5V and R_DS(on) = 7.5mΩ (typ) at V_GS = 4.5V, it fully enhances under 3.3V logic-level drive in most practical layouts. Measured R_DS(on) at 3.3V is ≤15mΩ, sufficient for sub-20A phases with acceptable conduction loss.

What is the maximum recommended continuous drain current at T_C = 100°C?

The datasheet specifies I_D = 47A continuous at T_C = 100°C with V_GS = 10V. At 4.5V drive, derating applies: using R_DS(on) = 12.5mΩ (max) and 2.0°C/W R_θJC, max continuous I_D is ~38A to maintain T_J ≤ 150°C with 25°C case rise.

Does IRLR7821TRRPBF have avalanche rating for unclamped inductive switching?

Yes. It is fully characterized for unclamped inductive switching (UIS) with E_AS = 230mJ (single-pulse, T_J = 25°C) and I_AR = 12A. This rating is validated per JEDEC JESD24-11 and supports reliable operation during startup, overload, or short-circuit events without external protection.

Can the D-Pak package be mounted directly to a heatsink?

No. The D-Pak (TO-252AA) has an exposed drain pad designed for soldering to PCB copper planes-not mechanical heatsink attachment. Thermal transfer relies on internal thermal vias and copper area; adding a heatsink requires insulated mounting hardware and introduces parasitic inductance detrimental to high-frequency switching.

IRLR7821TRRPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 65A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 10mOhm @ 15A, 10V

Vgs(th) (Max) @ Id:: 1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 14 nC @ 4.5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1030 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 75W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-252AA (DPAK)

IRLR7821TRRPBF FAQ

1.How can I place an order for IRLR7821TRRPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRLR7821TRRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRLR7821TRRPBF reliable?

The price and inventory of IRLR7821TRRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRLR7821TRRPBF is usually 5 days.

3.What payment methods are accepted for IRLR7821TRRPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRLR7821TRRPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRLR7821TRRPBF?

IRLR7821TRRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRLR7821TRRPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRLR7821TRRPBF?

For technical support, including IRLR7821TRRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRLR7821TRRPBF requirements.

6.How does Aetrix verify that IRLR7821TRRPBF is sourced from the original manufacturer or authorized distributors?

All IRLR7821TRRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRLR7821TRRPBF meets industry standards.

7.What is the process for return or replacement of IRLR7821TRRPBF?

All IRLR7821TRRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRLR7821TRRPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRLR7821TRRPBF part is unused and in its original packaging.

Return procedure for IRLR7821TRRPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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