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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRLR7833

Name: IRLR7833
Brand: Infineon Technologies
SKU: IRLR7833
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRLR7833

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: IRLR7833.pdf

Description:: MOSFET N-CH 30V 140A DPAK

Quantity:: RFQ Add To RFQ list

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Inventory:13,041

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Product details

Overview

IRLR7833 from Infineon Technologies is an N-channel enhancement-mode HEXFET Power MOSFET in D-Pak package, designed as a low-side synchronous rectifier switch with 30V V_DSS, 4.5 mΩ R_DS(on) at V_GS = 4.5V, 33 nC total gate charge, and 140 A pulsed drain current - deployed in high-frequency buck converters for CPU core power delivery.

For engineers reviewing the IRLR7833 datasheet, IRLR7833 pinout, IRLR7833 application, or IRLR7833 equivalent, key selection criteria include R_DS(on) at 4.5V drive, Q_gd/Q_gs1 ratio for C_dv/dt immunity, body diode reverse recovery (Q_rr = 37–55 nC), thermal resistance (R_θJC = 1.05 °C/W), and avalanche energy rating (E_AS = 12,500 mJ).

Technical Context

This MOSFET employs planar silicon process with optimized cell pitch and trench-assisted charge balance to achieve ultra-low on-resistance at logic-level gate drive. Its gate structure minimizes Q_gd (13 nC) relative to Q_gs1 (8.7 nC), reducing susceptibility to spurious turn-on during high dV/dt node transitions in synchronous rectification.

The integrated body diode exhibits fast reverse recovery (t_rr = 39–58 ns, Q_rr = 37–55 nC) and low forward voltage (V_SD ≤ 1.0 V at 12 A), enabling efficient freewheeling without external Schottky supplementation in 500 kHz–1 MHz DC/DC topologies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	30 V - Maximum blocking voltage compatible with 24 V input rails and transient overvoltage margins in telecom and computing power stages.
R_DS(on) @ 4.5 V	4.5 mΩ max - Enables <1.5 W conduction loss at 12 A RMS in 12 V→1.2 V buck converters with minimal heatsinking.
Q_g	33 nC typ - Determines gate driver current requirement (e.g., 3.3 A peak for 10 ns rise time) and switching loss contribution.
Q_gd/Q_gs1	13 nC / 8.7 nC - Low ratio suppresses Miller-induced false turn-on during high dV/dt node switching in synchronous FET position.
E_AS	12,500 mJ - Supports unclamped inductive switching survival in hard-switched or fault-recovery conditions without snubbers.
R_θJC	1.05 °C/W - Allows >100 W continuous dissipation with modest copper area and direct case-to-heatsink mounting.
t_rr	39–58 ns - Limits reverse recovery overlap loss with high-side FET, critical for efficiency above 500 kHz operation.

Pinout & Package

D-Pak (TO-252AA) package with exposed drain pad for thermal and electrical connection; surface-mount, single-row 3-lead configuration.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (G)	Gate	Control terminal; requires 4.5–10 V drive; threshold voltage 1.4–2.3 V enables logic-level compatibility with PWM controllers.
Pin 2 (D)	Drain	Main power output node; internally connected to exposed copper pad for low-inductance, high-current return path and thermal conduction.
Pin 3 (S)	Source	Power ground reference; ties to PCB ground plane; body diode anode - conducts freewheel current during high-side off-time.

Key Features

Feature	Design Value
Ultra-low R_DS(on) at 4.5 V	Enables use with 3.3 V or 5 V gate drivers in point-of-load regulators without level-shifting circuitry.
Fully characterized avalanche capability	Guarantees robustness against inductive kickback in non-isolated converters without external clamping components.
Low Q_gd/Q_gs1 ratio	Reduces risk of parasitic turn-on during high dV/dt transitions at the switching node, improving system reliability.
Fast body diode with low Q_rr	Minimizes shoot-through losses and EMI generation during dead-time intervals in synchronous rectification.

Applications

Server CPU Core VRM

Telecom DC-DC Module

Use Scenario: High-current, multi-phase buck converter supplying 0.8–1.5 V to x86 or ARM processors at up to 200 A per rail.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier FET; commutates during bottom-half of switching cycle with precise dead-time control.

Use Value: 4.5 mΩ R_DS(on) at 4.5 V reduces conduction loss by >35% vs. legacy 6–8 mΩ logic-level MOSFETs, directly improving full-load efficiency.

Use Scenario: 48 V input to 12 V isolated intermediate bus converter using active clamp forward or LLC topology with synchronous rectification.

IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier; switches at same frequency as primary (300–700 kHz), driven by transformer-coupled or digital controller signals.

Use Value: 12,500 mJ E_AS withstands reflected transients during primary-side switching faults, eliminating need for secondary-side TVS protection.

Industrial PLC Power Supply

Automotive ADAS Domain Controller

Use Scenario: 24 V industrial input converted to 3.3 V/5 V/12 V rails via cascaded buck stages powering I/O, communication, and logic circuits.

IC Role / Device Role / Timing Role: Primary low-side switch in high-efficiency 24 V → 5 V step-down stage operating continuously at ambient up to 70 °C.

Use Value: R_θJC = 1.05 °C/W allows direct mounting to metal chassis, enabling passive cooling and eliminating fan dependency in sealed enclosures.

Use Scenario: 12 V battery input to 1.0 V GPU core supply in autonomous driving compute module with strict thermal and reliability requirements.

IC Role / Device Role / Timing Role: Synchronous rectifier in multiphase buck regulator; operates under tight junction temperature constraints (T_J ≤ 150 °C) with high ripple current.

Use Value: t_rr = 39–58 ns and Q_rr = 37–55 nC minimize reverse recovery loss and associated EMI, supporting CISPR-25 Class 5 compliance.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRLR3714	R_DS(on) = 6.0 mΩ @ 4.5 V; Q_g = 22 nC; E_AS = 7,500 mJ	Lower gate charge but higher conduction loss - better suited for light-load efficiency optimization than full-load thermal management.	Select when gate drive strength is limited and peak current < 10 A.
SI7850DP	R_DS(on) = 3.8 mΩ @ 4.5 V; Q_gd/Q_gs1 = 0.9; R_θJC = 1.2 °C/W	Lower R_DS(on) but higher thermal resistance - requires enhanced PCB copper or heatsink for >100 A operation.	Select when lowest possible conduction loss dominates over thermal layout flexibility.

Compared with IRLR7833, IRLR3714 trades conduction loss for lower gate drive demand, while SI7850DP improves on-resistance at the cost of thermal margin - making IRLR7833 the balanced choice for thermally constrained, high-current synchronous rectification where both R_DS(on) and R_θJC must be simultaneously optimized.

Availability

IRLR7833 is available at Aetrix Electronics and suitable for server VRMs, telecom DC-DC modules, and industrial PLC power supplies requiring stable component supply, long-lifecycle support, and consistent parametric performance across production batches.

Supply support for IRLR7833 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs and discrete devices.

The HEXFET Power MOSFET product line delivers high-current, low-R_DS(on) silicon solutions optimized for high-frequency switching power conversion in computing, telecom, and industrial infrastructure.

FAQ

What is the maximum continuous drain current at 100°C case temperature?

The IRLR7833 supports 71 A continuous drain current at T_C = 100°C with V_GS = 10 V, as specified in the Absolute Maximum Ratings table. This value assumes adequate PCB copper area and thermal vias to maintain case temperature; derating applies above 100°C.

Does the IRLR7833 have a built-in ESD protection diode on the gate?

No - the IRLR7833 does not integrate gate ESD protection. Its gate oxide is rated for ±20 V absolute maximum V_GS; external gate resistors (≥10 Ω) and series Zener clamps are recommended in systems exposed to handling or board-level ESD events.

Can the IRLR7833 be used in avalanche mode for repetitive operation?

No - the datasheet specifies only single-pulse avalanche energy (E_AS). Repetitive avalanche is not characterized or guaranteed; sustained operation in avalanche requires external snubbing and thermal analysis beyond standard SOA limits.

How does the body diode forward voltage compare to discrete Schottky diodes?

V_SD is ≤1.0 V at 12 A and 25°C, higher than typical 0.3–0.5 V Schottky diodes. However, its integrated nature eliminates package inductance and enables zero dead-time control in synchronous designs - offsetting voltage penalty with reduced switching loss and layout complexity.

IRLR7833 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 140A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 4.5mOhm @ 15A, 10V

Vgs(th) (Max) @ Id:: 2.3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 50 nC @ 4.5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 4010 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 140W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-252AA (DPAK)

IRLR7833 FAQ

1.How can I place an order for IRLR7833 through Aetrix?

Please submit a Request for Quotation (RFQ) for IRLR7833 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRLR7833 reliable?

The price and inventory of IRLR7833 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRLR7833 is usually 5 days.

3.What payment methods are accepted for IRLR7833?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRLR7833 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRLR7833?

IRLR7833 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRLR7833 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRLR7833?

For technical support, including IRLR7833 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRLR7833 requirements.

6.How does Aetrix verify that IRLR7833 is sourced from the original manufacturer or authorized distributors?

All IRLR7833 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRLR7833 meets industry standards.

7.What is the process for return or replacement of IRLR7833?

All IRLR7833 units undergo pre-shipment inspection (PSI). If there is an issue with IRLR7833, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRLR7833 part is unused and in its original packaging.

Return procedure for IRLR7833:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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