Infineon Technologies IRLR7833CPBF

Overview

IRLR7833CPBF from Infineon Technologies is a 30V, 12A N-channel enhancement-mode HEXFET Power MOSFET in D-Pak (TO-252) package, featuring 4.5 mΩ R_DS(on) at V_GS = 4.5V, 33 nC total gate charge, and fully characterized avalanche capability - optimized for high-frequency synchronous buck converters in CPU power delivery.

For engineers reviewing the IRLR7833CPBF datasheet, IRLR7833CPBF pinout, IRLR7833CPBF application, or IRLR7833CPBF equivalent, key selection criteria include low-voltage gate drive compatibility (4.5V logic-level), ultra-low conduction loss at 12A DC, robust unclamped inductive switching performance, and thermal resistance of 1.05°C/W junction-to-case for PCB-mounted thermal management.

Technical Context

This MOSFET employs planar silicon HEXFET architecture with optimized cell pitch and trench-assisted channel design to achieve sub-5 mΩ on-resistance at 4.5V gate drive while maintaining <15 ns fall time and 13 nC gate-to-drain charge (Q_gd). Its body diode exhibits 39–58 ns reverse recovery time and 37–55 nC Q_rr, enabling efficient synchronous rectification without external Schottky supplementation.

The device is rated for 100% UIS (unclamped inductive switching) with 530 mJ single-pulse avalanche energy at T_J = 25°C and supports continuous operation up to 175°C junction temperature. Thermal derating begins at 0.95 W/°C above 25°C case temperature, consistent with its 1.05°C/W R_θJC.

Key Specifications

Pinout & Package

IRLR7833CPBF is housed in a lead-free D-Pak (TO-252) surface-mount package with exposed drain pad for thermal and electrical connection. The package features gull-wing leads and is optimized for automated reflow assembly on FR-4 PCBs with thermal vias.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with IRLR8729PbF and SI7850DP-T1-GE3, the IRLR7833CPBF delivers optimal balance of low R_DS(on), moderate Q_g, and proven thermal performance in D-Pak - making it preferred for industrial and telecom applications demanding reliability across wide temperature and load ranges.

Availability

IRLR7833CPBF is available at Aetrix Electronics and suitable for server CPU voltage regulators, telecom isolated DC-DC converters, and industrial PLC power modules requiring stable component supply and long-term manufacturing continuity.

Supply support for IRLR7833CPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to ISO/TS 16949 and IATF 16949 standards.

The IRLR7833CPBF belongs to Infineon's HEXFET® logic-level Power MOSFET product line, engineered specifically for high-efficiency, high-frequency DC-DC conversion in computing, telecom, and industrial power systems where 4.5V gate drive and avalanche ruggedness are mandatory.

FAQ

Is IRLR7833CPBF suitable for high-side switching applications?

No - IRLR7833CPBF is an N-channel MOSFET requiring gate voltage above source potential for enhancement. In high-side configurations, it necessitates a floating gate driver or charge pump. Its D-Pak drain pad is optimized for low-inductance, low-thermal-resistance connection to ground-referenced nodes, making it best suited for low-side synchronous rectification or common-source switching.

What is the maximum recommended PCB copper area for thermal performance?

For optimal thermal performance, Infineon recommends a minimum 400 mm² (20 mm × 20 mm) 2-oz copper pour connected to the drain pad via ≥6 thermal vias (0.3 mm diameter, spaced ≤2 mm apart). This achieves near-rated R_θJC = 1.05°C/W and supports continuous 12 A operation at T_C ≤ 85°C in still air.

Does IRLR7833CPBF have built-in ESD protection?

IRLR7833CPBF includes process-level gate oxide protection rated to ±20 V per Absolute Maximum Ratings, but no dedicated on-chip ESD clamp diodes. External gate protection (e.g., 10 Ω series resistor + 12 V Zener to source) is recommended for handling environments per JEDEC JS-001 Class 2 (2 kV HBM), especially during board assembly and test.

Can this MOSFET replace IRLR7833PbF in existing designs?

Yes - IRLR7833CPBF is the RoHS-compliant, lead-free version of IRLR7833PbF, with identical electrical specifications, pinout, package dimensions, and thermal characteristics. No layout or firmware changes are required; only reflow profile adjustment for Pb-free solder (peak 260°C) is needed per IPC-J-STD-020.