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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRLR7833CTRLPBF

Name: IRLR7833CTRLPBF
Brand: Infineon Technologies
SKU: IRLR7833CTRLPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRLR7833CTRLPBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: IRLR7833CTRLPBF.pdf

Description:: MOSFET N-CH 30V 140A DPAK

Quantity:: RFQ Add To RFQ list

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Inventory:9,663

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Product details

Overview

IRLR7833TRLF from Infineon Technologies is a 30V, 12A N-channel enhancement-mode HEXFET Power MOSFET in D-Pak (TO-252) package, optimized as a synchronous rectifier FET in high-frequency DC-DC converters. It delivers 3.6 mΩ R_DS(on) at V_GS = 4.5V, 33 nC total gate charge, and 1.05 °C/W junction-to-case thermal resistance - enabling efficient operation in 500 kHz+ buck converters for CPU/GPU VRMs and telecom power supplies.

For engineers reviewing the IRLR7833TRLF datasheet, IRLR7833TRLF pinout, IRLR7833TRLF application, or IRLR7833TRLF equivalent, key selection criteria include low R_DS(on) at 4.5V drive, ultra-low Q_gd/Q_gs1 ratio to suppress C_dv/dt turn-on, body diode reverse recovery charge (Q_rr = 37–55 nC), and avalanche-rated ruggedness (E_AS = 530 mJ) for synchronous rectification reliability.

Technical Context

This MOSFET is engineered for high-side control and low-side synchronous rectification in non-isolated buck topologies. Its gate threshold voltage (1.4–2.3 V) enables direct drive from 3.3V/5V controllers, while its 470 pF Crss and 13 nC Q_gd support fast, controlled switching with minimal Miller-induced shoot-through risk.

The device integrates a robust intrinsic body diode with 39–58 ns trr and 1.0 V V_SD, allowing reliable freewheeling in continuous conduction mode (CCM) without external Schottky supplementation. Thermal design leverages its 1.05 °C/W R_θJC for direct heatsink mounting in compact VRM modules.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - supports input rails up to 24 V with 25% margin for transient spikes in server/telecom power systems
R_DS(on) max @ 4.5V	4.5 mΩ - enables <1.5 W conduction loss at 12 A RMS in 48 V→12 V intermediate bus converters
Q_g	33 nC - determines gate driver current requirement (≥3.3 A peak for 10 ns rise time at 10 V swing)
Q_gd	13 nC - critical for Miller immunity; low Q_gd/Q_gs1 ratio reduces C_dv/dt turn-on risk in high-dV/dt nodes
E_AS	530 mJ - ensures single-pulse avalanche survivability during output short-circuit or startup fault conditions
R_θJC	1.05 °C/W - allows 40 W dissipation with ≤42 °C case-to-heatsink temperature rise, supporting compact PCB-mount thermal design
Q_rr	37–55 nC - quantifies body diode recovery loss transferred to high-side FET; impacts light-load efficiency and EMI

Pinout & Package

D-Pak (TO-252) package: exposed drain pad on bottom surface for low-inductance, high-current PCB routing and thermal conduction to heatsink or copper pour.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Source)	Source terminal (body diode anode)	Connected to power ground or low-side switch node; carries full load current and body diode freewheeling current
Pin 2 (Gate)	Control electrode	High-impedance input requiring low-capacitance gate driver; sensitive to dV/dt coupling from drain node
Pin 3 (Drain)	Power output terminal (body diode cathode)	Exposed metal pad soldered to PCB copper; serves as primary heat path and high-current return path to input capacitor

Key Features

Feature	Design Value
Ultra-low R_DS(on) at 4.5 V	3.6 mΩ typ. - enables use with 3.3 V or 5 V gate drivers in space-constrained VRMs without level-shifting
Fully characterized avalanche rating	530 mJ E_AS - guarantees safe operation under unclamped inductive switching stress in synchronous rectifier position
Low Q_gd/Q_gs1 ratio	13 nC / 8.7 nC ≈ 1.5 - minimizes Miller-induced false turn-on during high dV/dt transitions at the switch node
Optimized body diode recovery	Q_rr = 37–55 nC, trr = 39–58 ns - reduces cross-conduction loss and EMI generation compared to standard MOSFETs
Lead-free and RoHS-compliant	D-Pak package with matte tin plating - meets IPC-J-STD-020 moisture sensitivity level 1 (MSL-1) for standard reflow assembly

Applications

Server CPU Voltage Regulator Modules (VRMs)

Telecom 48 V→12 V Intermediate Bus Converters

Use Scenario: High-current, multi-phase buck converter supplying 100+ A to modern x86 or ARM processors with dynamic load steps up to 100 A/µs.

IC Role / Device Role: Low-side synchronous rectifier FET, operating in continuous conduction mode with 300–1000 kHz switching frequency.

Use Value: 3.6 mΩ R_DS(on) at 4.5 V reduces conduction loss by >35% vs. legacy 5 mΩ devices, directly improving full-load efficiency and reducing thermal density.

Use Scenario: Isolated forward or half-bridge DC-DC converter in 48 V telecom infrastructure, delivering 20–40 A at 12 V with strict efficiency and reliability requirements.

IC Role / Device Role: Secondary-side synchronous rectifier replacing Schottky diodes to eliminate forward voltage drop losses.

Use Value: 1.0 V V_SD and 37 nC Q_rr minimize body diode conduction loss and recovery energy transfer, increasing light-load efficiency by 2–3% over discrete diode solutions.

Industrial PLC Power Supplies

Automotive ADAS Domain Controller Power Rails

Use Scenario: Compact, fanless 24 V→5 V/3.3 V buck converter powering logic, I/O, and communication interfaces in programmable logic controllers.

IC Role / Device Role: Primary low-side switch in high-efficiency, thermally constrained industrial SMPS.

Use Value: 1.05 °C/W R_θJC enables direct heatsink attachment on small PCBs, maintaining TJ < 125°C at 15 A continuous without forced air cooling.

Use Scenario: 12 V→1.8 V/1.2 V point-of-load converter supplying AI accelerator SoCs in autonomous driving domain controllers.

IC Role / Device Role: Synchronous rectifier in multiphase buck stage operating at 1 MHz with tight transient response requirements.

Use Value: 33 nC Q_g and 14 ns t_d(on) support precise phase alignment and fast duty-cycle modulation, reducing output voltage deviation during 50 A/µs load transients.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRLR3714PbF	R_DS(on) = 5.3 mΩ @ 4.5 V; Q_g = 22 nC; E_AS = 320 mJ	Lower conduction loss not required; suitable where gate drive strength is limited	Select when lower gate charge outweighs higher R_DS(on) in low-current, high-frequency designs
SiR872DP-T1-GE3	R_DS(on) = 3.0 mΩ @ 4.5 V; Q_g = 41 nC; Q_rr = 29 nC; trench MOSFET	Better light-load efficiency due to lower Q_rr, but higher gate drive loss and cost	Prefer for ultra-high-efficiency telecom PSUs where Q_rr dominates system loss budget

Compared with IRLR3714PbF and SiR872DP-T1-GE3, the IRLR7833TRLF offers balanced trade-offs: lower R_DS(on) than IRLR3714PbF without excessive Q_g, and superior avalanche ruggedness versus SiR872DP-T1-GE3 - making it optimal for industrial and server VRMs demanding both efficiency and fault tolerance.

Availability

IRLR7833TRLF is available at Aetrix Electronics and suitable for server CPU VRMs, telecom intermediate bus converters, and industrial PLC power supplies requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for IRLR7833TRLF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices, with global manufacturing and quality certification to ISO/TS 16949 and IATF 16949.

The HEXFET Power MOSFET product line targets high-efficiency, high-reliability power conversion in computing, telecom, and industrial applications - emphasizing low R_DS(on), fast switching, and rugged avalanche performance for synchronous rectification and motor drive roles.

FAQ

What is the maximum continuous drain current for IRLR7833TRLF at 100°C case temperature?

The maximum continuous drain current is 71 A at T_C = 100°C with V_GS = 10 V, derated linearly above 25°C using 0.95 W/°C thermal resistance. At 100°C case, power dissipation is limited to 71.25 W, supporting 71 A only if R_DS(on) remains near its 25°C value - actual current must be reduced per R_DS(on) temperature coefficient (19 mV/°C for BVDSS, ~0.5%/°C for R_DS(on)).

Can IRLR7833TRLF be used as a high-side switch with 5 V gate drive?

Yes - its gate threshold voltage (1.4–2.3 V) and guaranteed R_DS(on) at 4.5 V make it fully compatible with 5 V logic-level gate drivers. However, high-side use requires a floating gate driver capable of providing V_GS ≥ 5 V referenced to the source, such as a bootstrap or isolated gate driver, due to the source potential swinging with the switch node.

How does the body diode's reverse recovery charge affect system efficiency?

Q_rr = 37–55 nC causes energy loss (Q_rr × V_IN) during each switching cycle and induces voltage spikes that increase EMI and stress the high-side FET. In synchronous rectifiers, this loss transfers to the control FET, raising its temperature and reducing overall converter efficiency - especially below 20% load where conduction loss dominates.

Is IRLR7833TRLF suitable for automotive AEC-Q101 qualification?

No - IRLR7833TRLF is not AEC-Q101 qualified. It is rated for industrial temperature range (−55°C to +175°C) and intended for commercial/industrial power supplies. For automotive ADAS or infotainment systems, Infineon's AEC-Q101-qualified equivalents like IRFR7530TRPbF should be selected instead, which undergo additional stress testing and lot traceability.

IRLR7833CTRLPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: -

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 140A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: -

Vgs(th) (Max) @ Id:: -

Gate Charge (Qg) (Max) @ Vgs:: -

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: -

FET Feature:: -

Power Dissipation (Max):: 140W (Tc)

Operating Temperature:: -

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-252AA (DPAK)

IRLR7833CTRLPBF FAQ

1.How can I place an order for IRLR7833CTRLPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRLR7833CTRLPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRLR7833CTRLPBF reliable?

The price and inventory of IRLR7833CTRLPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRLR7833CTRLPBF is usually 5 days.

3.What payment methods are accepted for IRLR7833CTRLPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRLR7833CTRLPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRLR7833CTRLPBF?

IRLR7833CTRLPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRLR7833CTRLPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRLR7833CTRLPBF?

For technical support, including IRLR7833CTRLPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRLR7833CTRLPBF requirements.

6.How does Aetrix verify that IRLR7833CTRLPBF is sourced from the original manufacturer or authorized distributors?

All IRLR7833CTRLPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRLR7833CTRLPBF meets industry standards.

7.What is the process for return or replacement of IRLR7833CTRLPBF?

All IRLR7833CTRLPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRLR7833CTRLPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRLR7833CTRLPBF part is unused and in its original packaging.

Return procedure for IRLR7833CTRLPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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