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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRLR7833CTRRPBF

Name: IRLR7833CTRRPBF
Brand: Infineon Technologies
SKU: IRLR7833CTRRPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRLR7833CTRRPBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: IRLR7833CTRRPBF.pdf

Description:: MOSFET N-CH 30V 140A DPAK

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Product details

Overview

IRLR7833CTRRPBF from Infineon Technologies is a 30V, 4.5mΩ (typ.) N-channel D-Pak power MOSFET optimized for high-frequency synchronous buck converters in CPU core voltage regulation and telecom DC-DC modules. It delivers 140A continuous drain current at TC = 25°C, features ultra-low gate charge (33nC typ.), and supports clamped inductive switching with 530mJ single-pulse avalanche energy.

For engineers reviewing the IRLR7833CTRRPBF datasheet, IRLR7833CTRRPBF pinout, IRLR7833CTRRPBF application, or IRLR7833CTRRPBF equivalent, key selection criteria include R_DS(on) at 4.5V V_GS, Q_g/Q_gd ratio for C_dv/dt immunity, body diode reverse recovery (Q_rr = 37–55nC), thermal resistance (R_θJC = 1.05°C/W), and SOA limits under repetitive pulsed operation.

Technical Context

This HEXFET device uses planar stripe cell structure with optimized gate oxide thickness to achieve low R_DS(on) while maintaining robust 30V breakdown (BVDSS ≥ 30V) and stable threshold voltage (V_GS(th) = 1.4–2.3V). Its gate charge profile shows Q_gs1 = 8.7nC and Q_gd = 13nC, enabling fast turn-on with minimal Miller plateau duration.

The integrated body diode exhibits t_rr = 39–58ns and Q_rr = 37–55nC at I_S = 12A, V_DD = 15V, supporting efficient synchronous rectification without external Schottky replacement. Thermal design relies on direct case-to-heatsink conduction via the exposed D-Pak drain pad (R_θJC = 1.05°C/W).

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	30V - Maximum blocking voltage for 12V/5V input rails in point-of-load converters
R_DS(on) @ 4.5V	4.5mΩ max - Enables <1W conduction loss at 15A RMS in 4-phase CPU VRMs
Q_g	33nC typ. - Reduces gate drive power loss and enables >1MHz switching with low-V_GS controllers
Q_gd/Q_gs1 ratio	1.5 - Limits C_dv/dt-induced false turn-on in high-dV/dt synchronous FET positions
R_θJC	1.05°C/W - Allows 100W+ dissipation with ≤100°C junction rise over heatsink at 25°C ambient
E_AS	530mJ - Supports unclamped inductive switching during startup/fault without failure
t_rr	39–58ns - Minimizes cross-conduction loss during dead-time in synchronous rectifiers

Pinout & Package

IRLR7833CTRRPBF is housed in a surface-mount D-Pak (TO-252AA) package with an exposed drain pad for thermal and electrical connection. The package meets JEDEC MO-238 standards and supports lead-free reflow soldering per J-STD-020.

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	Main current path output / heat sink interface	Electrically connected to PCB copper pour; primary thermal path to heatsink; must be soldered to ≥100mm² 2oz Cu area
Source	Reference node for gate drive and current sensing	Low-inductance return path for load current; used for Kelvin source sensing in precision VRMs
Gate	Control terminal for channel modulation	High-impedance input requiring <10Ω series resistor to damp ringing; sensitive to dV/dt coupling from drain node

Key Features

Feature	Design Value
Ultra-low R_DS(on) at 4.5V	Enables use with 5V gate drivers in cost-sensitive telecom DC-DC, eliminating level-shifters
Characterized avalanche capability	Guarantees 530mJ single-pulse ruggedness-critical for transient overload protection in server PSUs
Low Q_gd/Q_gs1 ratio	Reduces risk of parasitic turn-on during high dV/dt transitions in synchronous rectifier position
Optimized body diode Q_rr	37–55nC enables soft-recovery behavior, lowering EMI and reducing need for snubbers

Applications

Server CPU Voltage Regulator

Telecom 48V-to-12V Isolated DC-DC

Use Scenario: High-current, multi-phase buck converter supplying 1.0–1.8V/150A to Xeon or EPYC processors.

IC Role / Device Role / Timing Role: Synchronous FET (low-side switch) operating at 500kHz–1MHz with 4.5V gate drive.

Use Value: 4.5mΩ R_DS(on) reduces conduction loss by 35% vs. legacy 7mΩ parts, improving VR efficiency by 1.2% at full load.

Use Scenario: Secondary-side synchronous rectifier in forward or LLC converter delivering 12V/40A to base station radios.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier with body diode conducting during dead time.

Use Value: 39ns t_rr minimizes reverse recovery loss, cutting secondary-side dissipation by 2.1W vs. standard 60ns diodes.

Industrial PLC Power Module

Automotive ADAS Domain Controller Supply

Use Scenario: 24V input buck converter powering FPGA, memory, and I/O in programmable logic controllers.

IC Role / Device Role / Timing Role: Primary switching FET in 300kHz fixed-frequency regulator with overcurrent latch-off.

Use Value: 530mJ E_AS withstands inductive kickback from solenoid loads without external clamping.

Use Scenario: 12V-to-3.3V/5V point-of-load regulator for radar processor and camera SoCs in ASIL-B systems.

IC Role / Device Role / Timing Role: High-efficiency synchronous FET with AEC-Q101 stress qualification (per IR's automotive-grade variant lineage).

Use Value: R_θJC = 1.05°C/W enables derated 85A operation at 105°C case temperature-meeting automotive thermal margins.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRLR8729PbF	R_DS(on) = 3.3mΩ @ 4.5V, Q_g = 29nC, same D-Pak	Better conduction loss but lower avalanche rating (E_AS = 380mJ)	Preferred for efficiency-critical, low-transient environments like telecom rectifiers
SI7850DP-T1-GE3	R_DS(on) = 4.8mΩ @ 4.5V, Q_g = 38nC, SO-8 package	Smaller footprint but higher R_θJA (110°C/W); no exposed drain pad	Suitable for space-constrained, lower-power (<60A) industrial SMPS where thermal mass is limited

Compared with IRLR7833CTRRPBF, IRLR8729PbF trades avalanche ruggedness for lower conduction loss, while SI7850DP-T1-GE3 sacrifices thermal performance for board-area savings-making the IRLR7833CTRRPBF optimal for thermally demanding, high-reliability synchronous buck topologies.

Availability

IRLR7833CTRRPBF is available at Aetrix Electronics and suitable for server CPU voltage regulators, telecom isolated DC-DC converters, and industrial PLC power modules requiring stable component supply and long-term manufacturing continuity.

Supply support for IRLR7833CTRRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to ISO/TS 16949 and IATF 16949.

The IRLR7833CTRRPBF belongs to Infineon's HEXFET® Power MOSFET product line, engineered specifically for high-frequency, high-efficiency DC-DC conversion in computing and communications infrastructure.

FAQ

What is the maximum continuous drain current at 100°C case temperature?

The IRLR7833CTRRPBF supports 71A continuous drain current at T_C = 100°C with V_GS = 10V, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the D-Pak package and requires adequate PCB copper area and airflow to sustain.

Does this MOSFET require a gate resistor for stability?

Yes-a 5–10Ω non-inductive gate resistor is recommended between driver output and gate terminal to suppress high-frequency oscillation caused by gate-drain capacitance and PCB trace inductance, especially when driving at >500kHz with fast-edge controllers.

Can IRLR7833CTRRPBF replace IRLR7833PbF in existing designs?

Yes-IRLR7833CTRRPBF is a tape-and-reel packaging variant of the same die and specification as IRLR7833PbF, with identical electrical, thermal, and mechanical characteristics. No layout or schematic changes are required for drop-in substitution.

What is the typical body diode forward voltage at 12A?

The typical source-to-drain forward voltage (V_SD) is 0.85V at I_S = 12A and T_J = 25°C, per Figure 7 in the datasheet. This value increases to ~1.0V at T_J = 175°C, reflecting positive temperature coefficient behavior useful for current sharing.

IRLR7833CTRRPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: -

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 140A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: -

Vgs(th) (Max) @ Id:: -

Gate Charge (Qg) (Max) @ Vgs:: -

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: -

FET Feature:: -

Power Dissipation (Max):: 140W (Tc)

Operating Temperature:: -

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-252AA (DPAK)

IRLR7833CTRRPBF FAQ

1.How can I place an order for IRLR7833CTRRPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRLR7833CTRRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRLR7833CTRRPBF reliable?

The price and inventory of IRLR7833CTRRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRLR7833CTRRPBF is usually 5 days.

3.What payment methods are accepted for IRLR7833CTRRPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRLR7833CTRRPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRLR7833CTRRPBF?

IRLR7833CTRRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRLR7833CTRRPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRLR7833CTRRPBF?

For technical support, including IRLR7833CTRRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRLR7833CTRRPBF requirements.

6.How does Aetrix verify that IRLR7833CTRRPBF is sourced from the original manufacturer or authorized distributors?

All IRLR7833CTRRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRLR7833CTRRPBF meets industry standards.

7.What is the process for return or replacement of IRLR7833CTRRPBF?

All IRLR7833CTRRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRLR7833CTRRPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRLR7833CTRRPBF part is unused and in its original packaging.

Return procedure for IRLR7833CTRRPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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