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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRLR7833PBF

Name: IRLR7833PBF
Brand: Infineon Technologies
SKU: IRLR7833PBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRLR7833PBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: IRLR7833PBF.pdf

Description:: MOSFET N-CH 30V 140A DPAK

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRLR7833PBF from Infineon Technologies is a 30V, 140A N-channel enhancement-mode HEXFET Power MOSFET in D-Pak (TO-252) package, featuring 3.6 mΩ typical R_DS(on) at V_GS = 10 V and 33 nC total gate charge. It serves as a high-efficiency synchronous rectifier or control FET in high-frequency buck converters for CPU core power delivery.

For engineers reviewing the IRLR7833PBF datasheet, IRLR7833PBF pinout, IRLR7833PBF application, or IRLR7833PBF equivalent, key selection criteria include its ultra-low R_DS(on) at 4.5 V V_GS, fully characterized avalanche capability (530 mJ E_AS), and optimized gate charge profile (Q_gd/Q_gs1 ratio critical for C_dv/dt immunity in synchronous topologies).

Technical Context

This MOSFET employs planar silicon HEXFET architecture with integrated body diode, designed for unclamped inductive switching in hard-switched DC/DC topologies. Its gate threshold voltage (1.4–2.3 V) enables direct drive from 3.3 V or 5 V controllers, while low Q_gd (13 nC) and high g_fs (66 S) support fast, low-loss transitions at >500 kHz frequencies.

Thermal performance is defined by R_θJC = 1.05 °C/W and R_θJA = 50 °C/W (PCB mount), enabling high-current operation up to T_J = 175 °C. Avalanche ruggedness is validated per JEDEC JESD24-11, with single-pulse E_AS rated at 530 mJ at T_J = 25 °C.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	30 V - Maximum blocking voltage compatible with 24 V input rails and transient overshoot margins in telecom/industrial DC-DC
R_DS(on) max @ 10 V	4.5 mΩ - Enables <1 W conduction loss at 15 A RMS in 12 V→1 V buck stages
Q_g	33 nC - Total gate charge determines driver strength requirement and switching loss scaling with frequency
I_D @ T_C = 25°C	140 A - Continuous current rating under ideal heatsinking, supporting multi-phase VRM designs
E_AS	530 mJ - Single-pulse avalanche energy ensures robustness during output short-circuit or startup faults
C_iss	4010 pF - Input capacitance impacts gate drive loop stability and Miller effect during high-dv/dt transitions
Q_rr	37–55 nC - Reverse recovery charge of body diode directly contributes to shoot-through loss in synchronous rectification

Pinout & Package

IRLR7833PBF uses the surface-mount D-Pak (TO-252) package with exposed drain pad for thermal and electrical connection. The package measures 6.73 mm × 6.22 mm × 2.39 mm and is lead-free and RoHS-compliant.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (G)	Gate	Control terminal; requires low-impedance drive due to 33 nC Q_g and 4010 pF C_iss
Pin 2 (S)	Source	Reference node for gate drive and current sensing; tied to power ground in low-side configurations
Pin 3 (D)	Drain	Main power terminal; electrically and thermally connected to exposed copper pad on bottom of package

Key Features

Feature	Design Value
Ultra-low R_DS(on) at 4.5 V V_GS	Enables direct interface with 3.3 V/5 V PWM controllers without level-shifting, reducing BOM count
Fully characterized avalanche	Validated 530 mJ E_AS supports reliable operation under unclamped inductive load conditions without external snubbers
Optimized Q_gd/Q_gs1 ratio	Minimizes C_dv/dt induced turn-on risk in synchronous rectifiers where drain swings between 0 V and V_IN
Low Q_rr body diode	37–55 nC reverse recovery charge reduces cross-conduction loss and EMI in high-frequency synchronous buck stages

Applications

High-Frequency CPU Core VRM

Telecom Isolated DC-DC

Use Scenario: 12 V input → 1.0 V/150 A output for server CPU power delivery using multiphase synchronous buck topology.

IC Role / Device Role: Low-side synchronous rectifier FET, operating with 500–1000 kHz switching frequency and 4.5 V gate drive.

Use Value: 3.6 mΩ R_DS(on) at 10 V and low Q_rr reduce conduction and recovery losses, improving full-load efficiency by ≥0.8% vs. legacy 5 mΩ devices.

Use Scenario: Secondary-side synchronous rectification in 48 V→12 V isolated forward converter for 5G base station power supplies.

IC Role / Device Role: High-current rectifier replacing Schottky diodes, driven by transformer-coupled gate signals.

Use Value: 140 A continuous rating and 1.05 °C/W R_θJC allow compact heatsink design while maintaining T_J < 125 °C at 85 °C ambient.

Industrial Motor Drive Half-Bridge

Automotive ADAS Power Module

Use Scenario: 24 V motor control H-bridge with regenerative braking, requiring bidirectional current handling and avalanche tolerance.

IC Role / Device Role: Low-side switch in half-bridge configuration, conducting reverse current through integrated body diode during freewheeling.

Use Value: Fully characterized 530 mJ E_AS and 560 A pulsed source current (I_SM) ensure safe energy absorption during inductive kickback events.

Use Scenario: Compact 12 V→3.3 V/5 V power module for radar sensor ECUs, subject to automotive temperature cycling (-40 °C to +125 °C).

IC Role / Device Role: Primary switch in high-efficiency buck regulator, operating with 3.3 V logic-level gate drive from microcontroller.

Use Value: 1.4–2.3 V V_GS(th) and stable R_DS(on) over temperature enable robust start-up and regulation across full automotive junction range.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRLR3714PBF	R_DS(on) = 5.8 mΩ @ 10 V; Q_g = 24 nC; lower current rating (110 A)	Higher conduction loss at >10 A, but faster switching due to lower Q_g	Preferable where gate drive strength is limited and peak current ≤110 A
STL140N3LLH6	R_DS(on) = 3.0 mΩ @ 10 V; Q_g = 42 nC; DFN5x6 package (no exposed drain tab)	Lower R_DS(on) improves conduction efficiency, but higher Q_g increases switching loss and thermal path less robust	Choose when PCB space is constrained and thermal management via board copper is prioritized over case mounting

Compared with IRLR7833PBF, IRLR3714PBF trades conduction efficiency for reduced gate drive demand, while STL140N3LLH6 offers lower on-resistance in a smaller footprint but requires careful layout for thermal dissipation and exhibits higher gate charge-induced switching loss.

Availability

IRLR7833PBF is available at Aetrix Electronics and suitable for high-frequency CPU VRMs, telecom DC-DC converters, and industrial motor drives requiring stable component supply and long-term manufacturability.

Supply support for IRLR7833PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs and discrete devices.

The HEXFET Power MOSFET product line delivers high-current, low-R_DS(on) silicon solutions optimized for high-efficiency, high-frequency DC/DC conversion in computing, telecom, and industrial power systems.

FAQ

What is the maximum continuous drain current for IRLR7833PBF at 100°C case temperature?

The maximum continuous drain current is 71 A at T_C = 100 °C with V_GS = 10 V, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits of the D-Pak package and must be verified against actual PCB copper area and airflow in the target application.

Does IRLR7833PBF support logic-level gate drive at 3.3 V?

Yes - its gate threshold voltage range is 1.4–2.3 V, and it delivers 12 A drain current at V_GS = 3.3 V and V_DS = 5 V (per Fig. 3 transfer characteristics). However, R_DS(on) rises significantly below 4.5 V, so 3.3 V drive is viable only in low-current or paralleled configurations.

How is the body diode's reverse recovery performance characterized?

The body diode is characterized with t_rr = 39–58 ns and Q_rr = 37–55 nC at I_S = 12 A, V_DD = 15 V, and di/dt = 100 A/µs (T_J = 25 °C). These values are measured with the device in its standard D-Pak configuration and define switching loss contribution during synchronous rectification dead-time intervals.

Can IRLR7833PBF be used in parallel configurations?

Yes - its positive R_DS(on) temperature coefficient (Fig. 4) ensures inherent current sharing stability when paralleled. Designers must match gate drive impedance and minimize source inductance imbalance; layout symmetry and Kelvin-source routing are recommended for >2× paralleling.

IRLR7833PBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tube

Product Status:: Discontinued at Digi-Key

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 140A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 4.5mOhm @ 15A, 10V

Vgs(th) (Max) @ Id:: 2.3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 50 nC @ 4.5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 4010 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 140W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-252AA (DPAK)

IRLR7833PBF FAQ

1.How can I place an order for IRLR7833PBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRLR7833PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRLR7833PBF reliable?

The price and inventory of IRLR7833PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRLR7833PBF is usually 5 days.

3.What payment methods are accepted for IRLR7833PBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRLR7833PBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRLR7833PBF?

IRLR7833PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRLR7833PBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRLR7833PBF?

For technical support, including IRLR7833PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRLR7833PBF requirements.

6.How does Aetrix verify that IRLR7833PBF is sourced from the original manufacturer or authorized distributors?

All IRLR7833PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRLR7833PBF meets industry standards.

7.What is the process for return or replacement of IRLR7833PBF?

All IRLR7833PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRLR7833PBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRLR7833PBF part is unused and in its original packaging.

Return procedure for IRLR7833PBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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