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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRLR7833TR

Name: IRLR7833TR
Brand: Infineon Technologies
SKU: IRLR7833TR
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRLR7833TR

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: IRLR7833TR.pdf

Description:: MOSFET N-CH 30V 140A DPAK

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRLR7833TR from Infineon Technologies is a 30V, 120A N-channel enhancement-mode HEXFET Power MOSFET in D-Pak (TO-252) package, optimized for high-frequency synchronous buck converters and isolated DC-DC converters. It delivers 3.6 mΩ R_DS(on) at V_GS = 10 V, 33 nC total gate charge, and 1.4–2.3 V gate threshold voltage, enabling efficient low-voltage, high-current switching in CPU VRMs and telecom power supplies.

For engineers reviewing the IRLR7833TR datasheet, IRLR7833TR pinout, IRLR7833TR application, or IRLR7833TR equivalent, key selection criteria include its ultra-low R_DS(on) at 4.5 V V_GS, fully characterized avalanche capability, low Q_gd/Q_gs1 ratio for C_dv/dt immunity, and thermal resistance of 1.05 °C/W (junction-to-case), critical for high-density power stage design.

Technical Context

This MOSFET employs planar silicon HEXFET architecture with optimized cell pitch and trench-free die geometry to achieve low on-resistance while maintaining robust unclamped inductive switching (UIS) performance. Its gate charge profile-Q_gs1 = 8.7 nC, Q_gd = 13 nC, Q_sw = 15 nC-supports fast, controlled turn-on/turn-off transitions under 4.5 V gate drive, minimizing overlap loss in synchronous rectification.

The device integrates an intrinsic body diode with 39–58 ns reverse recovery time (t_rr) and 37–55 nC reverse recovery charge (Q_rr), enabling reliable operation in hard-switched topologies where diode conduction occurs during dead-time. Junction temperature range spans −55°C to +175°C, validated across linear derating and SOA curves up to 100 µs pulse width.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Maximum blocking voltage compatible with 24 V input bus and 12 V output rails in telecom and server power stages.
R_DS(on) max @ 10 V	4.5 mΩ - Enables ≤1.6 W conduction loss at 120 A DC, reducing heatsink requirements in compact VRMs.
Q_g	33 nC - Total gate charge determines driver current demand; supports <100 ns switching with 0.33 A peak gate drive.
t_r/t_f	6.9 / 15 ns - Fast edge rates minimize transition losses in >500 kHz switching applications.
C_iss/C_oss/C_rss	4010 / 950 / 470 pF - Low reverse transfer capacitance (C_rss) suppresses Miller-induced false turn-on in high-dv/dt nodes.
E_AS	530 mJ - Single-pulse avalanche energy rating ensures survivability during load dump or short-circuit transients without external snubbers.
V_GS(th)	1.4–2.3 V - Gate threshold compatible with 3.3 V and 5 V logic-level drivers, enabling direct microcontroller interface.

Pinout & Package

IRLR7833TR is housed in a surface-mount D-Pak (TO-252) package with exposed drain pad for enhanced thermal conduction. The package measures 6.73 mm × 6.22 mm × 2.39 mm and features gull-wing leads compatible with standard reflow profiles.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (G)	Gate	Control terminal; requires <2.3 V to ensure full turn-off; low input capacitance (C_iss = 4010 pF) reduces driver loading.
Pin 2 (D)	Drain	Main power output node; electrically connected to exposed copper pad for low-inductance, low-thermal-resistance path to PCB ground plane.
Pin 3 (S)	Source	Power return and reference for gate drive; ties to low-impedance source loop to minimize common-source inductance during switching.

Key Features

Feature	Design Value
Ultra-low R_DS(on) at 4.5 V V_GS	4.4 mΩ - Enables efficient operation directly from 5 V gate drivers, eliminating level-shifters in cost-sensitive designs.
Fully characterized avalanche	530 mJ E_AS - Validated under clamped inductive load per JEDEC JESD24-1, allowing safe operation without external protection circuits.
Low Q_gd/Q_gs1 ratio	13 nC / 8.7 nC ≈ 1.5 - Reduces susceptibility to C_dv/dt turn-on in synchronous FET position, preventing shoot-through in buck converters.
Optimized body diode	t_rr = 39–58 ns, Q_rr = 37–55 nC - Minimizes reverse recovery loss and associated ringing when used as synchronous rectifier.
High-temperature SOA	120 A @ T_C = 25°C, derated to 71 A @ T_C = 100°C - Supports continuous high-current operation in thermally constrained board layouts.

Applications

Server CPU Voltage Regulator Modules (VRMs)

Telecom Isolated DC-DC Converters

Use Scenario: High-current, multi-phase buck converter supplying 0.8–1.8 V to modern x86 and ARM processors at up to 200 A per phase.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier MOSFET, switching at 300–1000 kHz with precise dead-time control.

Use Value: 3.6 mΩ R_DS(on) cuts conduction loss by >35% vs. legacy 6 mΩ devices, directly improving VRM efficiency and reducing thermal stress on PCB copper.

Use Scenario: Secondary-side synchronous rectifier in 48 V–12 V isolated flyback or forward converters for 5G base station power supplies.

IC Role / Device Role / Timing Role: Active rectifier replacing Schottky diodes, driven by transformer-coupled or IC-based gate signals.

Use Value: 530 mJ avalanche rating withstands reflected transient spikes from primary-side switching, eliminating need for snubber networks.

Industrial Motor Drive Half-Bridge Legs

Automotive ADAS Power Management

Use Scenario: Low-side switch in 24 V BLDC motor inverter stages requiring high pulsed current handling and fast fault response.

IC Role / Device Role / Timing Role: PWM-controlled power switch operating at 20–50 kHz with integrated overcurrent protection feedback via sense-FET option.

Use Value: 560 A pulsed drain current (I_DM) supports 10× overload for stall detection and emergency braking sequences without thermal runaway.

Use Scenario: Power switch in radar module DC-DC conversion stages (e.g., 12 V → 3.3 V LDO pre-regulator) subject to automotive load dump and cold crank conditions.

IC Role / Device Role / Timing Role: Input protection and sequencing switch with fast turn-off (<23 ns t_d(off)) to isolate downstream circuitry during fault events.

Use Value: −55°C to +175°C operating range meets AEC-Q101 Grade 1 requirements, ensuring reliability in engine bay environments.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRLR3110ZPBF	R_DS(on) = 5.3 mΩ @ 10 V; Q_g = 29 nC; V_DS = 100 V	Higher voltage rating suits 48 V industrial systems but increases conduction loss in 12–24 V VRMs.	Select when higher breakdown margin is required and lower R_DS(on) is secondary to voltage safety factor.
STL110N3LLH6	R_DS(on) = 3.2 mΩ @ 10 V; Q_g = 45 nC; TO-263 package	Larger package improves thermal dissipation but requires larger PCB footprint and different layout rules.	Prefer for thermally limited designs where junction-to-ambient resistance must be <40 °C/W.

Compared with IRLR7833TR, IRLR3110ZPBF trades lower gate charge for higher on-resistance and wider voltage range, while STL110N3LLH6 offers lower R_DS(on) at the cost of higher Q_g and larger footprint-making IRLR7833TR optimal for space-constrained, high-frequency 30 V synchronous rectifiers.

Availability

IRLR7833TR is available at Aetrix Electronics and suitable for server CPU VRMs, telecom DC-DC converters, and industrial motor drives requiring stable component supply and long-term production continuity.

Supply support for IRLR7833TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and qualification infrastructure.

The IRLR7833TR belongs to Infineon's HEXFET® Power MOSFET product line, engineered specifically for high-efficiency, high-frequency DC-DC conversion in computing, communications, and industrial power systems.

FAQ

Is IRLR7833TR suitable for 3.3 V gate drive?

No. While V_GS(th) starts at 1.4 V, the device requires ≥4.5 V to achieve rated R_DS(on) of 4.5 mΩ. At 3.3 V, R_DS(on) rises to ~12 mΩ, increasing conduction loss by over 2.5×. Use only with 4.5 V or higher gate drive sources.

What is the maximum recommended PCB copper area for thermal relief?

For optimal thermal performance, the exposed drain pad must be soldered to ≥200 mm² of 2 oz copper on the top layer, connected via ≥6 thermal vias (0.3 mm diameter) to internal ground planes. This achieves R_θJA ≈ 50 °C/W, matching the datasheet's PCB-mount specification.

Does IRLR7833TR have integrated ESD protection?

No. The device lacks on-chip ESD protection diodes. Gate terminals are susceptible to human-body-model (HBM) discharges >2 kV. Always use grounded wrist straps, anti-static mats, and series gate resistors (≥10 Ω) during handling and PCB assembly.

Can it replace IRLU7833 in existing designs?

Yes, with layout verification. Both share identical die and electrical specs, but IRLR7833TR uses D-Pak (TO-252) while IRLU7833 uses I-Pak (TO-220AB). Footprint and thermal mounting differ significantly-D-Pak requires surface-mount reflow and thermal pad connection, whereas I-Pak relies on screw-mount heatsinking.

IRLR7833TR Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 140A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 4.5mOhm @ 15A, 10V

Vgs(th) (Max) @ Id:: 2.3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 50 nC @ 4.5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 4010 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 140W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-252AA (DPAK)

IRLR7833TR FAQ

1.How can I place an order for IRLR7833TR through Aetrix?

Please submit a Request for Quotation (RFQ) for IRLR7833TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRLR7833TR reliable?

The price and inventory of IRLR7833TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRLR7833TR is usually 5 days.

3.What payment methods are accepted for IRLR7833TR?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRLR7833TR transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRLR7833TR?

IRLR7833TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRLR7833TR order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRLR7833TR?

For technical support, including IRLR7833TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRLR7833TR requirements.

6.How does Aetrix verify that IRLR7833TR is sourced from the original manufacturer or authorized distributors?

All IRLR7833TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRLR7833TR meets industry standards.

7.What is the process for return or replacement of IRLR7833TR?

All IRLR7833TR units undergo pre-shipment inspection (PSI). If there is an issue with IRLR7833TR, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRLR7833TR part is unused and in its original packaging.

Return procedure for IRLR7833TR:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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