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Infineon Technologies IRLR7833TRL
- Part No.:
- IRLR7833TRL
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Datasheet:
-
IRLR7833TRL.pdf
- Description:
- MOSFET N-CH 30V 140A DPAK
- Quantity:
- Payment:
- Shipping:
Inventory:9,764
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Product details
Overview
IRLR7833TRL from Infineon Technologies is an N-channel enhancement-mode HEXFET Power MOSFET in D-Pak (TO-252) package, designed as a low-side synchronous rectifier switch in high-frequency DC-DC converters. It delivers 4.5 mΩ RDS(on) at VGS = 4.5 V, 33 nC total gate charge, and 140 A pulsed drain current - enabling efficient power delivery in server VRMs and telecom POL converters.
For engineers reviewing the IRLR7833TRL datasheet, IRLR7833TRL pinout, IRLR7833TRL application, or IRLR7833TRL equivalent, key selection criteria include its ultra-low gate impedance, fully characterized avalanche capability, body diode reverse recovery charge (Qrr = 37–55 nC), and thermal resistance (RθJC = 1.05 °C/W) for thermally constrained PCB layouts.
Technical Context
This MOSFET employs planar silicon process technology optimized for fast switching and low conduction loss in hard-switched synchronous buck topologies. Its gate threshold voltage (VGS(th) = 1.4–2.3 V) enables direct drive from 3.3 V or 5 V controllers, while the low Qgd/Qgs1 ratio minimizes Cdv/dt turn-on risk at the high dV/dt switching node.
The device integrates a robust intrinsic body diode with trr = 39–58 ns and VSD ≤ 1.0 V at 12 A, supporting bidirectional current handling during dead-time conduction. Avalanche energy rating (EAS = 530 mJ) and repetitive avalanche capability ensure reliability under unclamped inductive load conditions.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 30 V - supports 12 V and 24 V input rails with margin for transient overshoot |
| RDS(on) max @ 4.5 V | 4.5 mΩ - enables <1 W conduction loss at 15 A RMS in 48 V→12 V POL stages |
| Qg | 33 nC - determines gate driver current requirement (~1.65 A peak for 20 ns rise time) |
| ID @ TC = 25°C | 140 A - defines maximum continuous current under heatsink-cooled conditions |
| RθJC | 1.05 °C/W - allows junction temperature rise of ≤110°C at 100 W dissipation with minimal case-to-heatsink interface resistance |
| Qrr | 37–55 nC - directly contributes to shoot-through loss and EMI in synchronous rectification |
| tr/tf | 6.9/15 ns - sets minimum practical switching frequency limit (~5 MHz theoretical upper bound) |
Pinout & Package
IRLR7833TRL uses the D-Pak (TO-252) surface-mount package with exposed drain pad for thermal and electrical performance. The three-terminal configuration supports high-current PCB routing and low-inductance source connections.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Drain (Tab) | Main current path output terminal | Electrically and thermally connected to exposed copper pad - must be soldered to large PCB copper area for thermal management |
| Source | Reference node for gate control and current return | Low-inductance connection critical for minimizing gate loop ringing and shoot-through risk |
| Gate | Control electrode for channel modulation | High-impedance input requiring controlled slew rate; sensitive to parasitic coupling from switching node |
Key Features
| Feature | Design Value |
|---|---|
| Ultra-low RDS(on) at 4.5 V | Enables direct interfacing with 3.3 V/5 V PWM controllers without level-shifting, reducing BOM count |
| Fully characterized avalanche | Guarantees operation under unclamped inductive switching stress up to 530 mJ single-pulse energy |
| Low Qgd/Qgs1 ratio | Reduces susceptibility to spurious turn-on from high dV/dt at the switching node in synchronous buck converters |
| Optimized body diode recovery | Qrr = 37–55 nC and trr = 39–58 ns minimize reverse recovery loss and associated EMI generation |
Applications
| Server Voltage Regulator Modules | Telecom Point-of-Load Converters |
|---|---|
Use Scenario: High-current, multi-phase 48 V→0.8 V VRM supplying CPU/GPU cores in data center servers. IC Role / Device Role / Timing Role: Low-side synchronous rectifier switch operating at 500 kHz–1 MHz with precise dead-time control. Use Value: 4.5 mΩ RDS(on) reduces conduction loss by >30% vs. comparable 6 mΩ devices, improving full-load efficiency by ~0.8% at 200 A. | Use Scenario: Isolated 48 V→12 V DC-DC converter with synchronous rectification in 5G base station power supplies. IC Role / Device Role / Timing Role: Secondary-side rectifier MOSFET driven by transformer-coupled gate signal in forward or LLC topology. Use Value: 1.05 °C/W RθJC enables compact heatsinkless design at 60 W output, meeting EN 62368-1 thermal safety limits. |
| Industrial Motor Drive Gate Drivers | Automotive ADAS Power Supplies |
Use Scenario: Half-bridge high-side/low-side pair in 24 V BLDC motor gate driver IC auxiliary supply. IC Role / Device Role / Timing Role: Low-side switch regulating auxiliary 5 V rail for gate driver logic and bootstrap capacitor charging. Use Value: Fully characterized avalanche withstand (20 A IAR) prevents failure during motor phase commutation transients. | Use Scenario: Compact 12 V→3.3 V power stage for radar sensor ECUs in automotive ADAS systems. IC Role / Device Role / Timing Role: Synchronous rectifier in non-isolated buck converter operating across -40°C to +125°C ambient. Use Value: RDS(on) temperature coefficient (19 mV/°C) ensures stable on-resistance over full automotive temperature range. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRLR3714PBF | RDS(on) = 5.5 mΩ @ 4.5 V; Qg = 24 nC; lower current rating (110 A IDM) | Suitable for lower-power 12 V→1.2 V VRMs where gate drive strength is limited | Select when prioritizing faster switching over conduction loss reduction |
| SI7850DP-T1-GE3 | RDS(on) = 4.0 mΩ @ 4.5 V; Qg = 42 nC; SO-8 package with higher RθJA (62 °C/W) | Better conduction loss but higher gate drive loss and thermal resistance limits high-current use | Prefer for space-constrained designs where board area is more critical than thermal margin |
Compared with IRLR7833TRL, IRLR3714PBF trades conduction loss for reduced gate charge and cost, while SI7850DP-T1-GE3 improves RDS(on) but increases gate drive demand and thermal challenges in high-current D-Pak layouts.
Availability
IRLR7833TRL is available at Aetrix Electronics and suitable for server VRMs, telecom POL converters, industrial motor drive auxiliary supplies, and automotive ADAS power modules requiring stable component supply across extended temperature and high-reliability production cycles.
Supply support for IRLR7833TRL includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs and discrete devices.
The IRLR7833TRL belongs to Infineon's HEXFET® Power MOSFET product line, engineered specifically for high-efficiency, high-frequency synchronous rectification in non-isolated DC-DC converters.
FAQ
Is IRLR7833TRL suitable for 3.3 V gate drive?
Yes. With a gate threshold voltage of 1.4–2.3 V and guaranteed RDS(on) at VGS = 4.5 V, the device turns fully on using standard 3.3 V logic-level drivers. However, conduction loss increases to ~5.5 mΩ at 3.3 V, so thermal derating must be applied above 10 A continuous current.
What is the maximum recommended PCB copper area for the drain pad?
Infineon recommends ≥200 mm² of 2-oz copper connected to the drain tab via ≥6 thermal vias (0.3 mm diameter, filled or plated) to achieve the specified RθJC = 1.05 °C/W. Smaller areas increase junction temperature by up to 25°C at 100 W dissipation.
Does IRLR7833TRL have integrated ESD protection?
No. The device has no built-in ESD protection circuitry. Gate oxide withstands ±20 V per Absolute Maximum Ratings, so external 10 kΩ series gate resistor and TVS clamp (e.g., SMAJ5.0A) are required for handling during PCB assembly and system-level ESD events.
Can IRLR7833TRL replace IRLU7833 in existing designs?
Yes, with mechanical adaptation. Both share identical die and electrical specs, but IRLR7833TRL uses D-Pak (TO-252) while IRLU7833 uses I-Pak (TO-251). Footprint change requires PCB redesign, but thermal and electrical behavior remains identical under matched layout conditions.
IRLR7833TRL Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®
- Package/Case:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 140A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 4.5mOhm @ 15A, 10V
- Vgs(th) (Max) @ Id:
- 2.3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 50 nC @ 4.5 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 4010 pF @ 15 V
- FET Feature:
- -
- Power Dissipation (Max):
- 140W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TO-252AA (DPAK)
IRLR7833TRL FAQ
1.How can I place an order for IRLR7833TRL through Aetrix?
Please submit a Request for Quotation (RFQ) for IRLR7833TRL on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRLR7833TRL reliable?
The price and inventory of IRLR7833TRL are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRLR7833TRL is usually 5 days.
3.What payment methods are accepted for IRLR7833TRL?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRLR7833TRL transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRLR7833TRL?
IRLR7833TRL orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRLR7833TRL order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRLR7833TRL?
For technical support, including IRLR7833TRL datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRLR7833TRL requirements.
6.How does Aetrix verify that IRLR7833TRL is sourced from the original manufacturer or authorized distributors?
All IRLR7833TRL products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRLR7833TRL meets industry standards.
7.What is the process for return or replacement of IRLR7833TRL?
All IRLR7833TRL units undergo pre-shipment inspection (PSI). If there is an issue with IRLR7833TRL, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRLR7833TRL part is unused and in its original packaging.
Return procedure for IRLR7833TRL:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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