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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRLR7833TRLPBF

Name: IRLR7833TRLPBF
Brand: Infineon Technologies
SKU: IRLR7833TRLPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRLR7833TRLPBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: IRLR7833TRLPBF.pdf

Description:: MOSFET N-CH 30V 140A DPAK

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRLR7833TRLPBF from Infineon Technologies is a 30V N-channel D-Pak power MOSFET optimized for high-frequency synchronous buck converters in CPU core power delivery and telecom DC-DC applications. It delivers 4.5 mΩ R_DS(on) at V_GS = 4.5V, 33 nC total gate charge, and 140 A pulsed drain current with fully characterized avalanche capability.

For engineers reviewing the IRLR7833TRLPBF datasheet, IRLR7833TRLPBF pinout, IRLR7833TRLPBF application, or IRLR7833TRLPBF equivalent, key selection criteria include low-voltage gate drive compatibility (4.5V logic-level), ultra-low Q_gd/Q_gs1 ratio for C_dv/dt immunity in synchronous rectification, and validated unclamped inductive switching performance up to 125°C junction temperature.

Technical Context

This HEXFET device uses planar vertical DMOS structure with optimized cell pitch and trench-assisted source metallization to achieve sub-5 mΩ on-resistance at 4.5V gate drive while maintaining robust 30V breakdown voltage (BVDSS = 30V, tempco = 19 mV/°C). Its gate charge profile-Q_gs1 = 8.7 nC, Q_gd = 13 nC, Q_sw = 15 nC-enables fast, controlled turn-on/turn-off transitions critical for >500 kHz switching frequencies.

Thermal design is supported by R_θJC = 1.05 °C/W and R_θJA = 50 °C/W (PCB mount), enabling high-current operation in compact D-Pak footprint. The integrated body diode exhibits V_SD = 1.0 V at 12 A and t_rr = 39–58 ns with Q_rr = 37–55 nC, directly impacting shoot-through risk and control-FET loss distribution in synchronous topologies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	30 V - Maximum blocking voltage compatible with 24V input rails and transient overvoltage margins in telecom and server power supplies.
R_DS(on) max @ 4.5V	4.5 mΩ - Enables <1W conduction loss at 15A RMS, critical for high-efficiency CPU VRMs.
Q_g total	33 nC - Determines gate driver current requirement and switching loss contribution in high-frequency operation.
I_D @ T_C = 100°C	71 A - Sustained continuous current capability under thermally constrained PCB conditions.
E_AS	530 mJ - Validated single-pulse avalanche energy rating supporting robustness against inductive switching faults.
t_r/t_f	6.9 ns / 15 ns - Fast edge rates minimize overlap loss during hard-switched transitions in synchronous buck stages.
C_iss/C_oss/C_rss	4010 pF / 950 pF / 470 pF - Low reverse transfer capacitance (C_rss) reduces Miller-induced gate oscillation and dv/dt turn-on risk.

Pinout & Package

IRLR7833TRLPBF is housed in a lead-free D-Pak (TO-252AA) package with exposed drain pad for thermal enhancement. The package features standard 3-pin configuration: Gate (G), Drain (D), Source (S), with Drain electrically connected to the tab for low-inductance heat sinking.

Pin/Terminal	Circuit Role	Design Meaning
G	Gate terminal	Controls channel conduction; requires ≤2.3 V threshold and low-impedance drive to minimize switching losses.
D	Drain terminal	Main high-side or low-side switching node; electrically tied to exposed metal tab for thermal and electrical grounding.
S	Source terminal	Reference node for gate drive and current sensing; forms return path for load current and body diode conduction.

Key Features

Feature	Design Value
Logic-level gate drive	Specified R_DS(on) ≤4.5 mΩ at V_GS = 4.5V enables direct interface with 3.3V/5V PWM controllers without level-shifting.
Fully characterized avalanche	530 mJ E_AS and 20 A I_AR validated per JEDEC JESD24-1, ensuring reliability in unclamped inductive switching events.
Ultra-low Q_gd/Q_gs1 ratio	Q_gd = 13 nC, Q_gs1 = 8.7 nC → ratio ≈ 1.5 - minimizes Miller feedback susceptibility in high-dv/dt synchronous rectifier nodes.
Optimized body diode	t_rr = 39–58 ns and Q_rr = 37–55 nC reduce recovery-related cross-conduction losses and stress on control FET.

Applications

Server CPU Core Power Supply

Telecom Isolated DC-DC Converter

Use Scenario: High-current, multi-phase VRM delivering up to 200A to modern x86 processors with dynamic load steps exceeding 100A/µs.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier in interleaved buck stage, switching at 600–1000 kHz with 4.5V gate drive from integrated controller.

Use Value: 4.5 mΩ R_DS(on) at 4.5V reduces conduction loss by >30% versus 10V-driven alternatives, directly improving full-load efficiency above 90%.

Use Scenario: Secondary-side synchronous rectification in 48V-to-12V isolated flyback or forward converter for 5G base station power modules.

IC Role / Device Role / Timing Role: High-frequency rectifier operating with zero-voltage switching (ZVS) assist, driven by self-driven or active gate control.

Use Value: Low Q_gd/Q_gs1 ratio prevents false turn-on during primary-side switching transients, eliminating shoot-through failure modes.

Industrial PLC Power Management

High-Density Point-of-Load Module

Use Scenario: Compact 24V-input, 3.3V/5V/12V multi-rail power supply for programmable logic controllers with strict thermal envelope constraints.

IC Role / Device Role / Timing Role: Primary switch in non-isolated buck converter feeding downstream LDOs or POL regulators, operating at 300–500 kHz.

Use Value: R_θJC = 1.05 °C/W allows direct mounting to heatsink or copper pour, enabling 71A continuous current without forced air cooling.

Use Scenario: Embedded 12V-to-1V conversion in FPGA or ASIC power modules where board space and thermal density are limiting factors.

IC Role / Device Role / Timing Role: Low-side FET in stacked dual-MOSFET power stage with integrated driver, requiring minimal gate loop inductance.

Use Value: D-Pak footprint provides optimal balance of thermal performance and layout simplicity versus smaller packages like SO-8, avoiding solder joint reliability issues at high current.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRLR3714PbF	R_DS(on) = 6.0 mΩ @ 4.5V; Q_g = 24 nC; lower current rating (ID = 53A @ 100°C)	Better gate charge efficiency but higher conduction loss; suited for lighter loads or cost-sensitive designs	Select when gate drive power budget is tighter than conduction loss budget, especially below 10A average current.
SiR872DP-T1-GE3	R_DS(on) = 3.8 mΩ @ 4.5V; Q_g = 42 nC; TrenchFET® Gen IV process; SO-8 package	Lower on-resistance but higher gate charge and smaller thermal mass; requires careful PCB thermal design	Prefer for space-constrained layouts where D-Pak mounting is impractical, accepting higher driver loss and reduced avalanche margin.

Compared with IRLR7833TRLPBF, IRLR3714PbF trades conduction loss for gate drive efficiency, while SiR872DP-T1-GE3 improves R_DS(on) at the expense of higher Q_g and reduced thermal robustness-making IRLR7833TRLPBF optimal for thermally demanding, high-current synchronous rectification where avalanche ruggedness and D-Pak thermal performance are decisive.

Availability

IRLR7833TRLPBF is available at Aetrix Electronics and suitable for server CPU power supplies, telecom DC-DC converters, and industrial PLC power management systems requiring stable component supply and long-term manufacturing continuity.

Supply support for IRLR7833TRLPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs and discrete devices.

The IRLR series targets high-efficiency, high-frequency power conversion with logic-level gate drive compatibility, specifically engineered for synchronous rectification and CPU/GPU VRM applications where low R_DS(on) at 4.5V and robust avalanche performance are mandatory.

FAQ

Is IRLR7833TRLPBF suitable for 3.3V gate drive applications?

No. While rated for 4.5V logic-level drive, its R_DS(on) is not specified below 4.5V. At 3.3V, typical R_DS(on) exceeds 10 mΩ due to gate threshold voltage distribution (V_GS(th) = 1.4–2.3 V), causing excessive conduction loss. It requires ≥4.5V gate drive for guaranteed performance.

What is the maximum recommended case temperature for continuous operation?

The absolute maximum case temperature is 175°C, but continuous operation above 100°C requires derating. At T_C = 100°C, the device supports 71 A continuous drain current (ID) with V_GS = 10V. For reliable long-term operation, maintain T_C ≤ 100°C using adequate copper area or heatsinking per the 1.05 °C/W R_θJC.

Does IRLR7833TRLPBF have a built-in ESD protection diode?

No. This MOSFET does not integrate gate ESD protection. External Zener clamping (e.g., 12V TVS between G and S) is required in handling and circuit design to prevent gate oxide damage from static discharge, especially in automated assembly environments.

Can it replace IRLR7833PbF in existing designs?

Yes. IRLR7833TRLPBF is the tape-and-reel packaging variant of IRLR7833PbF with identical electrical specifications, thermal characteristics, and D-Pak mechanical dimensions. No layout or thermal redesign is needed; only reel logistics and moisture sensitivity level (MSL) handling differ.

IRLR7833TRLPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 140A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 4.5mOhm @ 15A, 10V

Vgs(th) (Max) @ Id:: 2.3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 50 nC @ 4.5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 4010 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 140W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-252AA (DPAK)

IRLR7833TRLPBF FAQ

1.How can I place an order for IRLR7833TRLPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRLR7833TRLPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRLR7833TRLPBF reliable?

The price and inventory of IRLR7833TRLPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRLR7833TRLPBF is usually 5 days.

3.What payment methods are accepted for IRLR7833TRLPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRLR7833TRLPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRLR7833TRLPBF?

IRLR7833TRLPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRLR7833TRLPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRLR7833TRLPBF?

For technical support, including IRLR7833TRLPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRLR7833TRLPBF requirements.

6.How does Aetrix verify that IRLR7833TRLPBF is sourced from the original manufacturer or authorized distributors?

All IRLR7833TRLPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRLR7833TRLPBF meets industry standards.

7.What is the process for return or replacement of IRLR7833TRLPBF?

All IRLR7833TRLPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRLR7833TRLPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRLR7833TRLPBF part is unused and in its original packaging.

Return procedure for IRLR7833TRLPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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