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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRLR7833TRPBF

Name: IRLR7833TRPBF
Brand: Infineon Technologies
SKU: IRLR7833TRPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRLR7833TRPBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: IRLR7833TRPBF.pdf

Description:: MOSFET N-CH 30V 140A DPAK

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRLR7833TRPBF from Infineon Technologies is a 30V, 12A N-channel enhancement-mode HEXFET Power MOSFET in D-Pak (TO-252) package, featuring 4.5 mΩ max R_DS(on) at V_GS = 4.5V, 33 nC total gate charge, and fully characterized avalanche capability - optimized for high-frequency synchronous buck converters in CPU VRMs and telecom DC-DC modules.

For engineers reviewing the IRLR7833TRPBF datasheet, IRLR7833TRPBF pinout, IRLR7833TRPBF application, or IRLR7833TRPBF equivalent, key selection criteria include low-voltage gate drive compatibility (4.5V logic-level), ultra-low conduction loss at 12A, robust unclamped inductive switching performance, and thermal resistance of 1.05°C/W junction-to-case for high-power-density board layouts.

Technical Context

This MOSFET employs planar silicon HEXFET architecture with integrated body diode, enabling fast reverse recovery (t_rr = 39–58 ns) and low Q_rr (37–55 nC) critical for synchronous rectification. Its gate threshold voltage (V_GS(th) = 1.4–2.3 V) and negative temperature coefficient (–6.0 mV/°C) support stable turn-on across –55°C to +175°C operating range.

The device is characterized for clamped inductive switching with single-pulse avalanche energy up to 530 mJ at T_J = 25°C and rated for repetitive avalanche under controlled conditions. Input capacitance (C_iss = 4010 pF) and gate-drain charge (Q_gd = 13 nC) are specified at V_DS = 15 V, supporting precise PWM timing in MHz-range converters.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - maximum blocking voltage compatible with 24V input rails and transient margin in industrial/computing power supplies
R_DS(on) max @ 4.5V	4.5 mΩ - enables ≤0.65 W conduction loss at 12 A DC, reducing thermal load in compact VRM designs
Q_g	33 nC - determines gate driver current requirement (e.g., 3.3 A peak for 10 ns rise time), directly impacting switching loss
t_r/t_f	6.9 ns / 15 ns - supports >1 MHz switching frequencies with minimal overlap loss in synchronous topologies
Q_rr	37–55 nC - quantifies body diode recovery charge transferred during dead-time, critical for shoot-through avoidance
R_θJC	1.05 °C/W - allows direct heatsinking via PCB copper pour or clip-mount, enabling >60 W dissipation with 65°C case rise
E_AS	530 mJ - specifies single-pulse avalanche ruggedness for fault tolerance in unclamped inductive loads

Pinout & Package

IRLR7833TRPBF uses the surface-mount D-Pak (TO-252) package with exposed drain pad for thermal and electrical connection. The three-terminal configuration supports high-current source-sink operation with low-inductance layout.

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	Main current path output terminal	Internally connected to exposed metal tab - must be soldered to large copper area for thermal management and low-impedance return path
Source	Reference node for gate control and current return	Common node for gate drive reference and power ground; low-inductance routing minimizes switching noise coupling
Gate	Control electrode for channel modulation	High-impedance input requiring <100 nA leakage; sensitive to ESD and dv/dt-induced turn-on due to Q_gd/Q_gs1 ratio

Key Features

Feature	Design Value
Logic-level gate drive	Guaranteed turn-on at 4.5 V V_GS, eliminating need for level-shifting in 5 V or 3.3 V controller systems
Fully characterized avalanche	Rated E_AS = 530 mJ and I_AR = 20 A enable reliable operation under inductive fault conditions without external snubbers
Ultra-low gate impedance	Q_gd/Q_gs1 ratio minimized to reduce C_dv/dt susceptibility - critical for high-dv/dt synchronous FETs
Enhanced body diode	t_rr = 39–58 ns and Q_rr = 37–55 nC minimize reverse recovery losses and cross-conduction risk in hard-switched topologies
Lead-free and RoHS-compliant	Meets IPC-J-STD-020 moisture sensitivity level 1 (MSL1) and reflow profile up to 260°C peak

Applications

Server CPU Voltage Regulator

Telecom 48V-to-12V Isolated DC-DC

Use Scenario: High-current, multi-phase buck converter delivering 12–200 A at <1 V to Intel/AMD processors in rack-mounted servers.

IC Role / Device Role / Timing Role: Synchronous rectifier (low-side FET) operating at 500 kHz–1.5 MHz with 50–100 ns dead time.

Use Value: 4.5 mΩ R_DS(on) reduces conduction loss by >35% vs. standard 6–8 mΩ MOSFETs, lowering VRM temperature rise by 12°C at full load.

Use Scenario: Secondary-side synchronous rectifier in forward or LLC converters powering base station RF modules.

IC Role / Device Role / Timing Role: Low-side switch in center-tapped or active-clamp topology, driven by transformer-coupled gate signal.

Use Value: 33 nC Q_g and 13 nC Q_gd enable clean 100 ns turn-off with minimal Miller-induced delay, improving efficiency by 0.8% at 20 A output.

Industrial PLC Power Supply

Automotive ADAS Domain Controller

Use Scenario: 24V input buck converter supplying 3.3 V/5 V rails for I/O and communication modules in factory automation controllers.

IC Role / Device Role / Timing Role: Primary switching FET in non-isolated step-down stage, operating at 300–600 kHz with overtemperature protection.

Use Value: 175°C T_J(max) and 1.05°C/W R_θJC allow continuous 12 A operation in sealed enclosures without forced air cooling.

Use Scenario: 12V-to-1.1V core supply for radar SoCs and vision processors in autonomous driving ECUs.

IC Role / Device Role / Timing Role: High-efficiency phase-leg FET in multiphase VRM with digital PWM control and current sensing.

Use Value: Fully characterized avalanche rating (530 mJ) ensures survivability during load dump transients on vehicle battery rail, meeting ISO 7637-2 Pulse 5a requirements.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRLR8729PbF	R_DS(on) = 3.3 mΩ @ 4.5V, Q_g = 35 nC, same D-Pak package	Slightly lower conduction loss but higher gate charge increases switching loss above 1 MHz	Prefer for <1 MHz VRMs where conduction dominates; verify gate driver slew rate capability
SI7850DP-T1-GE3	R_DS(on) = 4.0 mΩ @ 4.5V, Q_g = 28 nC, SO-8 package with dual FET option	Lower Q_g improves light-load efficiency but SO-8 thermal resistance (R_θJA = 50°C/W) limits >8 A continuous use	Select for space-constrained boards needing dual-FET integration; avoid in >10 A thermal-limited zones

Compared with IRLR7833TRPBF, IRLR8729PbF offers marginally better conduction efficiency but trades off higher gate drive loss, while SI7850DP-T1-GE3 delivers superior switching efficiency in SO-8 footprint at the cost of thermal derating - making IRLR7833TRPBF the balanced choice for 12 A, 1 MHz-class synchronous rectifiers requiring robust thermal performance.

Availability

IRLR7833TRPBF is available at Aetrix Electronics and suitable for server CPU voltage regulators, telecom isolated DC-DC converters, and industrial PLC power supplies requiring stable component supply and long-term manufacturing continuity.

Supply support for IRLR7833TRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor leader specializing in power management, automotive ICs, and industrial control solutions, with global manufacturing and quality certification to ISO 9001 and IATF 16949.

This device belongs to Infineon's HEXFET Power MOSFET product line, engineered specifically for high-efficiency, high-frequency DC-DC conversion in computing, telecom, and industrial power systems where low R_DS(on), fast switching, and avalanche ruggedness are mandatory.

FAQ

What is the maximum continuous drain current at 100°C case temperature?

The IRLR7833TRPBF supports 12 A continuous drain current at T_C = 25°C and derates linearly to 71 A at T_C = 100°C per the Absolute Maximum Ratings table. This reflects its 1.05°C/W R_θJC and 175°C T_J(max), enabling high-current operation when properly heatsinked.

Does this MOSFET require a gate resistor for stability in synchronous buck applications?

Yes - a 2–10 Ω gate resistor is recommended to dampen ringing caused by PCB trace inductance interacting with Q_gd and gate capacitance. Typical evaluation boards use 4.7 Ω to balance switching speed (t_r/t_f) and EMI, especially when driving from low-impedance PWM controllers like the ISL63xx series.

Can IRLR7833TRPBF be used as a high-side switch with bootstrap gate drive?

No - it is an N-channel device requiring gate voltage ≥ V_DS + V_GS(th) for full enhancement. In high-side configurations, it must be driven by a floating bootstrap or isolated gate driver capable of delivering ≥10 V above the source potential; standalone 5 V logic cannot achieve full turn-on in high-side mode.

How does its body diode performance compare to Schottky alternatives in synchronous rectification?

The integrated body diode has V_SD = 1.0 V and t_rr = 39–58 ns - higher forward drop than Schottky diodes but faster recovery than standard PN diodes. In synchronous rectification, it is actively turned off before reverse recovery begins, making its Q_rr (37–55 nC) the dominant loss factor rather than forward conduction, unlike passive Schottky solutions.

IRLR7833TRPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 140A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 4.5mOhm @ 15A, 10V

Vgs(th) (Max) @ Id:: 2.3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 50 nC @ 4.5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 4010 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 140W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-252AA (DPAK)

IRLR7833TRPBF FAQ

1.How can I place an order for IRLR7833TRPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRLR7833TRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRLR7833TRPBF reliable?

The price and inventory of IRLR7833TRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRLR7833TRPBF is usually 5 days.

3.What payment methods are accepted for IRLR7833TRPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRLR7833TRPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRLR7833TRPBF?

IRLR7833TRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRLR7833TRPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRLR7833TRPBF?

For technical support, including IRLR7833TRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRLR7833TRPBF requirements.

6.How does Aetrix verify that IRLR7833TRPBF is sourced from the original manufacturer or authorized distributors?

All IRLR7833TRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRLR7833TRPBF meets industry standards.

7.What is the process for return or replacement of IRLR7833TRPBF?

All IRLR7833TRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRLR7833TRPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRLR7833TRPBF part is unused and in its original packaging.

Return procedure for IRLR7833TRPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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