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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRLR7833TRR

Name: IRLR7833TRR
Brand: Infineon Technologies
SKU: IRLR7833TRR
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRLR7833TRR

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: IRLR7833TRR.pdf

Description:: MOSFET N-CH 30V 140A DPAK

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRLR7833TRR from Infineon Technologies is a 30V, 120A N-channel enhancement-mode HEXFET Power MOSFET in D-Pak (TO-252) package, featuring 4.5 mΩ max R_DS(on) at V_GS = 10 V and 33 nC total gate charge, optimized for high-frequency synchronous buck converters in CPU power delivery.

For engineers reviewing the IRLR7833TRR datasheet, IRLR7833TRR pinout, IRLR7833TRR application, or IRLR7833TRR equivalent, key selection criteria include low R_DS(on) at 4.5V drive, ultra-low gate impedance, fully characterized avalanche capability, and thermal performance under high-current pulsed loads in compact DC-DC topologies.

Technical Context

This MOSFET employs planar silicon process with optimized cell geometry to achieve sub-5 mΩ on-resistance while maintaining robust unclamped inductive switching (UIS) capability up to 530 mJ at T_J = 25°C. Its gate charge profile-Q_gs1 = 8.7 nC, Q_gd = 13 nC, Q_sw = 15 nC-enables fast, controlled turn-on/turn-off with minimal C_dv/dt susceptibility in hard-switched synchronous rectifiers.

The device integrates an intrinsic body diode with t_rr = 39–58 ns and Q_rr = 37–55 nC, supporting efficient reverse recovery in high-side switching nodes. Thermal resistance R_θJC = 1.05 °C/W enables direct heatsink mounting for sustained 120A conduction at T_C = 25°C.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	30 V - Maximum blocking voltage compatible with 24V input rails and transient overshoot margins in telecom and computing power supplies.
R_DS(on) max	4.5 mΩ @ V_GS = 10 V - Enables <1.8 W conduction loss at 120A DC, critical for >90% efficiency in high-current VRMs.
Q_g	33 nC - Low total gate charge reduces driver power and propagation delay, supporting >1 MHz switching in synchronous buck stages.
I_D @ T_C = 25°C	120 A - Continuous drain current rating verified under PCB-mounted thermal conditions, enabling single-device solutions for multi-phase CPU core power.
E_AS	530 mJ - Single-pulse avalanche energy rating ensures ruggedness against inductive kickback during startup, fault, or load dump events.
R_θJC	1.05 °C/W - Junction-to-case thermal resistance allows direct thermal interface to heatsink, supporting stable operation at T_J ≤ 175°C under full load.

Pinout & Package

IRLR7833TRR uses the D-Pak (TO-252) surface-mount package with exposed drain pad for thermal and electrical connection. The package measures 6.73 mm × 6.22 mm × 2.39 mm and is RoHS-compliant.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Source)	Source terminal (S)	Low-impedance return path for load current; tied to power ground plane; connects to internal source metallization of all parallel cells.
Pin 2 (Gate)	Control input (G)	High-impedance MOS gate requiring <100 nA leakage; driven by PWM controller; sensitive to C_dv/dt coupling due to Q_gd/Q_gs1 ratio.
Pin 3 (Drain)	Power output (D)	Exposed copper pad on bottom surface; electrically and thermally connected to drain region; must be soldered to large copper area for thermal management.

Key Features

Feature	Design Value
Ultra-low R_DS(on) at 4.5V V_GS	5.5 mΩ max - Enables direct drive from 5V logic or integrated gate drivers without level-shifting, reducing BOM count in VRM controllers.
Fully characterized avalanche	E_AS = 530 mJ, I_AR = 20 A - Validated under clamped inductive load per JEDEC JESD24-11, eliminating need for external snubbers in non-isolated converters.
Optimized gate charge profile	Q_gd/Q_gs1 = 1.49 - Minimizes Miller-induced false turn-on during high dV/dt transitions, improving reliability in synchronous rectifier position.
Enhanced body diode performance	t_rr = 39 ns, Q_rr = 37 nC - Reduces reverse recovery losses and associated shoot-through risk when used as low-side switch in buck topology.

Applications

Server CPU Voltage Regulator

Telecom DC-DC Brick

Use Scenario: High-current, multi-phase buck converter supplying 0.8–1.8 V at up to 200 A to modern x86 and ARM server processors.

IC Role / Device Role: Low-side synchronous rectifier MOSFET handling continuous 120 A conduction and high-frequency switching (>500 kHz).

Use Value: 4.5 mΩ R_DS(on) limits conduction loss to <6.5 W, while 33 nC Q_g enables tight dead-time control and minimizes switching loss at elevated frequencies.

Use Scenario: Isolated forward or LLC converter secondary-side synchronous rectification in 48 V input telecom power modules.

IC Role / Device Role: Primary-side synchronous FET in active clamp forward or secondary-side rectifier in half-bridge LLC with 12 V output.

Use Value: 30 V V_DSS provides margin over 12 V rail plus transients; 530 mJ E_AS withstands reflected primary-side spikes without derating.

Industrial PLC Power Supply

Automotive ADAS Domain Controller

Use Scenario: Compact 24 V input to 5 V/3.3 V point-of-load regulator for programmable logic controller I/O modules.

IC Role / Device Role: High-efficiency buck switch operating at 1 MHz with forced PWM mode under light load.

Use Value: Low Q_g and Q_oss reduce gate drive and capacitive losses, sustaining >89% efficiency down to 10% load without entering discontinuous conduction mode.

Use Scenario: Power delivery to radar processor and camera SoCs in automotive domain controllers with strict thermal envelope constraints.

IC Role / Device Role: Secondary-side synchronous rectifier in isolated flyback or forward converter powering 1.1 V core rails.

Use Value: R_θJC = 1.05 °C/W enables direct heatsink attachment within sealed enclosure; 175°C T_J(max) supports operation in under-hood ambient up to 105°C.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRL3803PBF	R_DS(on) = 6.0 mΩ @ 10 V; Q_g = 42 nC; TO-220 package	Larger footprint and higher thermal resistance (R_θJC = 2.5 °C/W); requires through-hole assembly	Select when board space permits larger package and higher R_DS(on) is acceptable for cost-sensitive industrial designs.
SUD15N03-60-E3	R_DS(on) = 4.8 mΩ @ 10 V; Q_g = 29 nC; PowerPAK SO-8	Smaller footprint but lower current rating (100 A); no exposed drain pad for heatsinking	Select when PCB real estate is constrained and thermal load is <100 A; verify layout thermal relief for SO-8 thermal pad.

Compared with IRLR7833TRR, IRL3803PBF trades lower cost for higher conduction loss and inferior thermal performance, while SUD15N03-60-E3 offers tighter gate drive but reduced current capacity and heatsinking capability-making IRLR7833TRR optimal for high-current, thermally demanding synchronous rectifier roles.

Availability

IRLR7833TRR is available at Aetrix Electronics and suitable for server CPU voltage regulators, telecom DC-DC bricks, and industrial PLC power supplies requiring stable component supply and long-term production continuity.

Supply support for IRLR7833TRR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to ISO/TS 16949 and IECQ QC 080000.

The IRLR7833TRR belongs to Infineon's HEXFET® Power MOSFET product line, engineered specifically for high-efficiency, high-current DC-DC conversion in computing, telecom, and industrial power systems where low R_DS(on), fast switching, and avalanche ruggedness are mandatory.

FAQ

What is the maximum continuous drain current for IRLR7833TRR at 100°C case temperature?

The maximum continuous drain current is 71 A at T_C = 100°C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the D-Pak package under sustained high-temperature operation and must be validated with actual PCB copper area and airflow in the target application.

Does IRLR7833TRR support 4.5 V gate drive in high-current applications?

Yes-R_DS(on) is characterized at 4.5 V V_GS with a typical value of 4.4 mΩ and maximum of 5.5 mΩ. At 12 A, this yields <0.8 W conduction loss, making it suitable for 5 V logic-driven synchronous rectifiers without gate boosting.

How is the body diode performance relevant in synchronous buck configurations?

In synchronous buck converters, the body diode conducts during the dead-time interval before the low-side FET turns on. With t_rr = 39 ns and Q_rr = 37 nC, the IRLR7833TRR minimizes reverse recovery loss and associated voltage overshoot, reducing stress on the high-side FET and EMI generation.

Can IRLR7833TRR be used in linear regulator applications?

No-it is not rated for linear-mode operation. The Safe Operating Area (SOA) curve shows that operation above 10 V V_DS is limited to <10 A at DC, and prolonged linear conduction risks thermal runaway due to positive R_DS(on) temperature coefficient and lack of SOA derating data beyond 100 µs pulses.

IRLR7833TRR Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 140A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 4.5mOhm @ 15A, 10V

Vgs(th) (Max) @ Id:: 2.3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 50 nC @ 4.5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 4010 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 140W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-252AA (DPAK)

IRLR7833TRR FAQ

1.How can I place an order for IRLR7833TRR through Aetrix?

Please submit a Request for Quotation (RFQ) for IRLR7833TRR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRLR7833TRR reliable?

The price and inventory of IRLR7833TRR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRLR7833TRR is usually 5 days.

3.What payment methods are accepted for IRLR7833TRR?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRLR7833TRR transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRLR7833TRR?

IRLR7833TRR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRLR7833TRR order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRLR7833TRR?

For technical support, including IRLR7833TRR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRLR7833TRR requirements.

6.How does Aetrix verify that IRLR7833TRR is sourced from the original manufacturer or authorized distributors?

All IRLR7833TRR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRLR7833TRR meets industry standards.

7.What is the process for return or replacement of IRLR7833TRR?

All IRLR7833TRR units undergo pre-shipment inspection (PSI). If there is an issue with IRLR7833TRR, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRLR7833TRR part is unused and in its original packaging.

Return procedure for IRLR7833TRR:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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