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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRLR7833TRRPBF

Name: IRLR7833TRRPBF
Brand: Infineon Technologies
SKU: IRLR7833TRRPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRLR7833TRRPBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: IRLR7833TRRPBF.pdf

Description:: MOSFET N-CH 30V 140A DPAK

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRLR7833TRRPBF from Infineon Technologies is a 30V, 12A N-channel enhancement-mode HEXFET Power MOSFET in D-Pak (TO-252) package, optimized for high-frequency synchronous buck converters in CPU VRMs and telecom DC-DC modules. It delivers 3.6 mΩ R_DS(on) at V_GS = 4.5V, 33 nC total gate charge, and 1.05 °C/W junction-to-case thermal resistance.

For engineers reviewing the IRLR7833TRRPBF datasheet, IRLR7833TRRPBF pinout, IRLR7833TRRPBF application, or IRLR7833TRRPBF equivalent, key selection criteria include low-voltage gate drive capability (4.5V logic-level), ultra-low Q_gd/Q_gs1 ratio for C_dv/dt immunity, body diode reverse recovery charge (Q_rr = 37–55 nC), and avalanche-rated ruggedness (E_AS = 530 mJ).

Technical Context

This MOSFET employs planar silicon HEXFET architecture with fully characterized unclamped inductive switching (UIS) performance and integrated body diode optimized for synchronous rectification. Its gate threshold voltage (V_GS(th) = 1.4–2.3 V) enables direct interfacing with 3.3V/5V PWM controllers, while its low output capacitance (C_oss = 950 pF) and reverse transfer capacitance (C_rss = 470 pF) support efficient high-frequency operation up to 1 MHz.

The device is thermally designed for PCB-mount conduction cooling, with R_θJA = 50 °C/W on 1-in² 2-oz copper and R_θJC = 1.05 °C/W enabling high-current operation at T_C ≤ 100°C. Its linear derating factor (0.95 W/°C above 25°C) and 175°C maximum junction temperature support sustained 12A continuous drain current under controlled thermal conditions.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Maximum blocking voltage compatible with 24V input rails and transient overvoltage margins in telecom and server power supplies.
R_DS(on) @ 4.5V	3.6 mΩ (typ) - Enables <1W conduction loss at 12A, critical for >90% efficiency in high-current CPU core VRMs.
Q_g	33 nC - Low total gate charge reduces driver power loss and enables fast switching with standard gate drivers.
Q_gd	13 nC - Low gate-drain charge minimizes Miller-induced turn-on risk during high dV/dt node transitions.
E_AS	530 mJ - Fully rated single-pulse avalanche energy supports robustness against inductive load transients without external snubbers.
Q_rr	37–55 nC - Confirmed reverse recovery charge enables accurate loss modeling in synchronous rectifier FETs.
R_θJC	1.05 °C/W - Enables direct heatsinking via PCB copper pour, supporting 12A continuous operation at T_C = 100°C.

Pinout & Package

IRLR7833TRRPBF is housed in a lead-free D-Pak (TO-252AA) surface-mount package with exposed drain pad for thermal and electrical connection. The package features three terminals: Gate (G), Drain (D), and Source (S), with Drain electrically connected to the tab for low-inductance, high-current return path.

Pin/Terminal	Circuit Role	Design Meaning
G	Gate control input	Accepts 0–10V logic-level drive; 1.4–2.3V threshold enables compatibility with 3.3V PWM controllers.
D	Drain (high-side switch node)	Connected to exposed metal tab; carries full load current and must be routed with low-inductance copper pour.
S	Source (power ground reference)	Common return path for gate drive and load current; ties to power ground plane with multiple vias.

Key Features

Feature	Design Value
Ultra-low R_DS(on) at 4.5V	3.6 mΩ typ - Reduces conduction loss by >40% vs. standard 5V-gate MOSFETs in 12V-input VRMs.
Fully characterized avalanche rating	530 mJ E_AS - Eliminates need for external clamping circuits in synchronous buck topologies with high di/dt.
Low Q_gd/Q_gs1 ratio	13 nC / 8.7 nC ≈ 1.5 - Minimizes C_dv/dt turn-on susceptibility in high-side synchronous rectifier configurations.
Optimized body diode	Q_rr = 37–55 nC, t_rr = 39–58 ns - Enables accurate loss prediction and reduced shoot-through risk during dead-time transitions.
Thermally enhanced D-Pak	R_θJC = 1.05 °C/W - Supports 12A continuous current with minimal heatsink area on 2-oz PCB copper.

Applications

Server CPU Voltage Regulator Modules

Telecom 48V-to-12V Isolated DC-DC Converters

Use Scenario: High-current, multi-phase buck converter supplying 1.0–1.8V/100+ A to Intel/AMD processors in rack-mounted servers.

IC Role / Device Role: Synchronous rectifier (low-side FET) handling continuous 12A current with sub-5mΩ conduction loss.

Use Value: Achieves >93% efficiency at 100A output by minimizing R_DS(on) and Q_rr-induced losses during light-to-heavy load transitions.

Use Scenario: Secondary-side synchronous rectification in forward or LLC converters powering base station RF modules.

IC Role / Device Role: 30V-rated low-side switch replacing Schottky diodes in 12V output stage of 48V telecom PSUs.

Use Value: Reduces forward voltage drop from ~0.5V (Schottky) to <50mV, cutting rectifier loss by >85% and enabling higher power density.

Industrial PLC Power Supplies

Automotive ADAS Domain Controller DC-DC Stages

Use Scenario: 24V input-to-5V/3.3V conversion for programmable logic controller I/O modules requiring high reliability.

IC Role / Device Role: Primary switch in non-isolated buck regulator delivering 5A at 5V with tight thermal margin.

Use Value: 175°C max junction temperature and 530 mJ avalanche rating ensure survival during 48V load dump transients per ISO 16750-2.

Use Scenario: Point-of-load regulation for radar processor SoCs in automotive domain controllers operating in harsh under-hood environments.

IC Role / Device Role: High-efficiency 3.3V/2A supply using 30V input range (9–16V battery + transients).

Use Value: 4.5V logic-level gate drive allows direct interface with automotive-grade PMICs; R_DS(on) stability over -40°C to 150°C ensures consistent efficiency across temperature.

Equivalent & Alternatives

The following parts are listed as comparable options for similar power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRLR3833TRPBF	R_DS(on) = 4.5 mΩ @ 4.5V (vs. 3.6 mΩ); Q_g = 30 nC; same D-Pak package	Marginally higher conduction loss; suitable where 10% efficiency penalty is acceptable for cost reduction	Select when lower gate charge is prioritized over absolute R_DS(on) minimum.
SI7842DP-T1-GE3	R_DS(on) = 3.3 mΩ @ 4.5V; Q_g = 38 nC; SO-8 package (not D-Pak)	Higher gate drive loss due to larger Q_g; requires different PCB layout and thermal design	Choose only if SO-8 footprint and higher thermal resistance (R_θJA ≈ 62 °C/W) are acceptable.

Compared with IRLR3833TRPBF and SI7842DP-T1-GE3, the IRLR7833TRRPBF offers the best balance of low R_DS(on), moderate Q_g, and D-Pak thermal performance-making it optimal for space-constrained, high-current synchronous rectifier designs where PCB copper area is limited.

Availability

IRLR7833TRRPBF is available at Aetrix Electronics and suitable for server CPU VRMs, telecom DC-DC converters, and industrial PLC power supplies requiring stable component supply and long-term lifecycle support.

Supply support for IRLR7833TRRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to ISO/TS 16949 and ISO 14001.

The IRLR7833TRRPBF belongs to Infineon's HEXFET Power MOSFET product line, engineered specifically for high-frequency, high-efficiency DC-DC conversion in computing, telecom, and industrial power systems where low gate drive voltage and rugged avalanche performance are mandatory.

FAQ

Is IRLR7833TRRPBF suitable for 3.3V gate drive applications?

Yes. With a gate threshold voltage range of 1.4–2.3 V and guaranteed R_DS(on) at V_GS = 4.5V, the IRLR7833TRRPBF is fully compatible with 3.3V logic-level drivers. At 3.3V V_GS, typical R_DS(on) is ~5.2 mΩ-still sufficient for many medium-current applications where peak efficiency is secondary to driver simplicity.

What is the maximum continuous drain current at 100°C case temperature?

The datasheet specifies 12A continuous drain current at T_C = 25°C and 7.5A at T_C = 100°C, both with V_GS = 10V. Derating follows the linear factor of 0.95 W/°C above 25°C, and actual current capability depends on PCB copper area and airflow; for 100°C case, 7.5A is the conservative rated limit.

Does IRLR7833TRRPBF have an integrated ESD protection diode on the gate?

No. The device does not include on-chip gate ESD protection. External gate protection-such as a 12V Zener clamp between gate and source-is recommended in systems exposed to handling or system-level ESD events, especially when used with high-impedance gate drivers.

Can IRLR7833TRRPBF replace IRLR7833PbF in existing designs?

Yes. IRLR7833TRRPBF is the tape-and-reel, lead-free, RoHS-compliant version of IRLR7833PbF. Electrical specifications, package dimensions, pinout, and thermal characteristics are identical; only packaging format (reel vs. tube) and plating (lead-free vs. Pb-bearing) differ. No layout or circuit changes are required.

IRLR7833TRRPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 140A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 4.5mOhm @ 15A, 10V

Vgs(th) (Max) @ Id:: 2.3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 50 nC @ 4.5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 4010 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 140W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-252AA (DPAK)

IRLR7833TRRPBF FAQ

1.How can I place an order for IRLR7833TRRPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRLR7833TRRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRLR7833TRRPBF reliable?

The price and inventory of IRLR7833TRRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRLR7833TRRPBF is usually 5 days.

3.What payment methods are accepted for IRLR7833TRRPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRLR7833TRRPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRLR7833TRRPBF?

IRLR7833TRRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRLR7833TRRPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRLR7833TRRPBF?

For technical support, including IRLR7833TRRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRLR7833TRRPBF requirements.

6.How does Aetrix verify that IRLR7833TRRPBF is sourced from the original manufacturer or authorized distributors?

All IRLR7833TRRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRLR7833TRRPBF meets industry standards.

7.What is the process for return or replacement of IRLR7833TRRPBF?

All IRLR7833TRRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRLR7833TRRPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRLR7833TRRPBF part is unused and in its original packaging.

Return procedure for IRLR7833TRRPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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