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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRLR7843PBF

Name: IRLR7843PBF
Brand: Infineon Technologies
SKU: IRLR7843PBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRLR7843PBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: IRLR7843PBF.pdf

Description:: MOSFET N-CH 30V 161A DPAK

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRLR7843PBF from Infineon Technologies is a 30V, 120A N-channel D-Pak power MOSFET optimized for high-frequency synchronous buck converters in CPU VRMs and telecom DC-DC supplies. It delivers 2.6 mΩ R_DS(on) at V_GS = 10 V, 34 nC total gate charge, and 1.05 °C/W junction-to-case thermal resistance - enabling high-efficiency, low-loss switching in compact board layouts.

For engineers reviewing the IRLR7843PBF datasheet, IRLR7843PBF pinout, IRLR7843PBF application, or IRLR7843PBF equivalent, key selection criteria include its ultra-low R_DS(on) at 4.5 V (3.3 mΩ), fully characterized avalanche capability (1440 mJ E_AS), body diode reverse recovery charge (Q_rr = 36–54 nC), and D-Pak thermal performance under high-current pulsed loads.

Technical Context

This HEXFET device uses planar stripe silicon technology with optimized gate oxide thickness and channel doping to achieve low on-resistance while maintaining robust avalanche ruggedness. Its gate threshold voltage (1.4–2.3 V) and negative temperature coefficient (−5.4 mV/°C) support stable operation across −55°C to +175°C junction range.

The MOSFET features a fully rated intrinsic body diode with 12 A continuous source current capability, 39–59 ns reverse recovery time, and 1.0 V forward voltage - critical for synchronous rectification where diode conduction occurs during dead-time intervals.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - supports 12 V and 24 V input rails with margin for transient spikes in server and telecom power stages.
R_DS(on) @ 10 V	2.6 mΩ typ - enables <1 W conduction loss at 120 A DC, reducing thermal stress in high-current CPU core supplies.
Q_g	34 nC - balances fast switching (low t_r/t_f) against gate driver power demand in 300–1000 kHz converters.
E_AS	1440 mJ - withstands unclamped inductive energy during hard-switching faults without failure.
R_θJC	1.05 °C/W - allows direct heatsinking via PCB copper pour or clip-mount, supporting >100 W dissipation in D-Pak footprint.
Q_rr	36–54 nC - minimizes cross-conduction losses and shoot-through risk when used as synchronous rectifier.

Pinout & Package

IRLR7843PBF is housed in a surface-mount D-Pak (TO-252AA) package with exposed drain pad for thermal and electrical connection. The package supports solder reflow per JEDEC J-STD-020 and offers 1.05 °C/W junction-to-case thermal resistance when mounted on ≥1 in² 2-oz copper.

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	Main current path output terminal	Exposed metal tab connects directly to PCB drain copper; must be electrically tied to high-side switch node and thermally coupled to heatsink.
Source	Reference node for gate drive and current sensing	Low-inductance return path for load current; used for Kelvin source sensing in precision current monitoring designs.
Gate	Control electrode for channel modulation	High-impedance input requiring <10 Ω series resistance to damp ringing; sensitive to dV/dt-induced turn-on due to Q_gd/Q_gs1 ratio.

Key Features

Feature	Design Value
Ultra-low R_DS(on) at 4.5 V	3.3 mΩ max - enables efficient operation directly from 5 V or 3.3 V gate drivers in space-constrained VRM modules.
Fully characterized avalanche	1440 mJ single-pulse E_AS at T_J = 25°C - eliminates need for external snubbers in non-isolated topologies with inductive transients.
Low gate charge asymmetry	Q_gd/Q_gs1 ≈ 1.3 - reduces susceptibility to C_dv/dt turn-on during high-dV/dt switching node transitions.
Enhanced body diode performance	Q_rr = 36–54 nC, t_rr = 39–59 ns - lowers reverse recovery losses and improves light-load efficiency in synchronous rectification.

Applications

Server CPU Voltage Regulator

Telecom Isolated DC-DC Converter

Use Scenario: High-current, multi-phase buck converter delivering 1.0–1.8 V at up to 200 A to modern x86 processors.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier MOSFET in each phase leg, commutating current during bottom-switch conduction interval.

Use Value: 2.6 mΩ R_DS(on) and 34 nC Q_g reduce both conduction and switching losses, enabling >90% efficiency at 300 kHz switching frequency.

Use Scenario: Secondary-side synchronous rectifier in 48 V input, 12 V output isolated flyback or forward converter for base station power.

IC Role / Device Role / Timing Role: Active rectifier replacing Schottky diode on transformer secondary winding, driven by self-driven or controller-synchronized gate signal.

Use Value: Body diode Q_rr of 36–54 nC and 1.0 V V_SD minimize reverse recovery losses and improve light-load regulation versus discrete diodes.

Industrial Motor Drive Half-Bridge

Automotive ADAS Power Supply

Use Scenario: 24 V DC bus half-bridge driving brushed DC motors or solenoids in factory automation systems.

IC Role / Device Role / Timing Role: Low-side switch in H-bridge configuration, handling bidirectional current up to 120 A peak with PWM control.

Use Value: 1440 mJ E_AS rating ensures reliable operation during motor stall or inductive kickback events without derating.

Use Scenario: Compact 12 V input, 3.3 V/5 V dual-output power supply for radar and camera modules in autonomous driving ECUs.

IC Role / Device Role / Timing Role: Primary-side high-efficiency switch in synchronous buck regulator powering FPGA or SoC subsystems.

Use Value: D-Pak package enables high-current density layout on small automotive PCBs while maintaining 175°C TJ rating for under-hood reliability.

Equivalent & Alternatives

The following parts are listed as comparable options for similar power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRLR3714PBF	R_DS(on) = 4.5 mΩ @ 10 V; Q_g = 22 nC; lower current rating (80 A)	Better gate drive efficiency at lower currents; less suitable for >100 A phases	Select when optimizing for gate drive power over conduction loss in sub-100 A designs.
STL220N3LLH6	R_DS(on) = 2.2 mΩ @ 10 V; SO-8FL package; no exposed drain tab	Higher current density but limited thermal dissipation (R_θJA = 40 °C/W); not D-Pak drop-in	Choose for space-constrained boards where PCB area is prioritized over thermal headroom.

Compared with IRLR7843PBF, IRLR3714PBF trades conduction loss for reduced gate drive burden, while STL220N3LLH6 offers lower R_DS(on) in a smaller footprint but sacrifices thermal performance and requires redesign of thermal vias and copper layout.

Availability

IRLR7843PBF is available at Aetrix Electronics and suitable for server CPU voltage regulators, telecom isolated DC-DC converters, and industrial motor drive half-bridges requiring stable component supply and long-term production continuity.

Supply support for IRLR7843PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to ISO/TS 16949 and IATF 16949.

The IRLR7843PBF belongs to Infineon's HEXFET® Power MOSFET product line, engineered specifically for high-efficiency, high-frequency DC-DC conversion in computing, communications, and industrial power systems.

FAQ

What is the maximum continuous drain current for IRLR7843PBF at 100°C case temperature?

The maximum continuous drain current is 71 A at T_C = 100°C with V_GS = 10 V, as specified in the Absolute Maximum Ratings table. This value reflects thermal limitation of the D-Pak package rather than silicon capability, and assumes adequate PCB copper area for heat spreading.

Does IRLR7843PBF have a built-in body diode, and what are its key parameters?

Yes - it integrates a monolithic N-channel body diode with 161 A continuous source current rating, 620 A pulsed rating, 1.0 V forward voltage at 12 A, and 39–59 ns reverse recovery time. These values are measured under standard conditions (T_J = 25°C, I_S = 12 A, di/dt = 100 A/µs) and enable use as synchronous rectifier without external diode.

Can IRLR7843PBF be driven directly from a 3.3 V microcontroller GPIO?

No - its gate threshold voltage ranges from 1.4 V to 2.3 V, but full enhancement requires ≥4.5 V to achieve rated R_DS(on). At 3.3 V, R_DS(on) rises significantly (≈6.5 mΩ), increasing conduction loss. A dedicated gate driver or level-shifting circuit is required for reliable switching.

What is the recommended PCB layout practice for thermal management of IRLR7843PBF?

Use ≥1 in² of 2-ounce copper connected to the exposed drain tab via ≥8 thermal vias (0.3 mm diameter, 0.8 mm pitch). Place gate and source traces short and wide to minimize inductance; isolate gate loop area from high-dV/dt nodes to prevent coupling. Follow IPC-7351B D-Pak land pattern for optimal solder joint reliability.

IRLR7843PBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tube

Product Status:: Discontinued at Digi-Key

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 161A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 3.3mOhm @ 15A, 10V

Vgs(th) (Max) @ Id:: 2.3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 50 nC @ 4.5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 4380 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 140W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-252AA (DPAK)

IRLR7843PBF FAQ

1.How can I place an order for IRLR7843PBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRLR7843PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRLR7843PBF reliable?

The price and inventory of IRLR7843PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRLR7843PBF is usually 5 days.

3.What payment methods are accepted for IRLR7843PBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRLR7843PBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRLR7843PBF?

IRLR7843PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRLR7843PBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRLR7843PBF?

For technical support, including IRLR7843PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRLR7843PBF requirements.

6.How does Aetrix verify that IRLR7843PBF is sourced from the original manufacturer or authorized distributors?

All IRLR7843PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRLR7843PBF meets industry standards.

7.What is the process for return or replacement of IRLR7843PBF?

All IRLR7843PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRLR7843PBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRLR7843PBF part is unused and in its original packaging.

Return procedure for IRLR7843PBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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