Infineon Technologies IRLR7843TRLPBF

Overview

IRLR7843TRLPBF from Infineon Technologies is a 30V, 12A N-channel enhancement-mode HEXFET Power MOSFET in D-Pak (TO-252) package, optimized for high-frequency synchronous buck converters and isolated DC-DC converters with synchronous rectification. It delivers 2.6 mΩ R_DS(on) at V_GS = 10 V, 34 nC total gate charge, and 1.05 °C/W junction-to-case thermal resistance - enabling efficient power delivery in server VRMs and telecom power supplies.

For engineers reviewing the IRLR7843TRLPBF datasheet, IRLR7843TRLPBF pinout, IRLR7843TRLPBF application, or IRLR7843TRLPBF equivalent, key selection criteria include its ultra-low R_DS(on) at 4.5 V V_GS, fully characterized avalanche capability (1440 mJ E_AS), body diode reverse recovery charge (Q_rr = 36–54 nC), and suitability for high dv/dt switching nodes in synchronous rectifier topologies.

Technical Context

This MOSFET employs planar silicon HEXFET architecture with optimized cell pitch and trench-assisted gate structure to minimize both conduction and switching losses. Its low Q_gd/Q_gs1 ratio (≈1.3) reduces susceptibility to C_dv/dt turn-on in high-side synchronous FET configurations.

The device features a fully rated intrinsic body diode with t_rr = 39–59 ns and V_SD ≤ 1.0 V at I_S = 12 A, supporting hard-switched and resonant synchronous rectification. Thermal design leverages its 1.05 °C/W R_θJC for direct heatsink mounting via the exposed drain pad.

Key Specifications

Pinout & Package

IRLR7843TRLPBF uses the D-Pak (TO-252) surface-mount package with an exposed drain pad for thermal and electrical connection. The three-terminal configuration supports low-inductance PCB layout in high-current power stages.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with IRLR7843TRLPBF, IRLR3110ZPBF trades conduction efficiency for lower gate drive demand, while STL120N3LLH6 improves thermal headroom at the cost of increased switching loss and layout complexity - making IRLR7843TRLPBF optimal for balanced 12 A, 30 V synchronous rectifier designs where D-Pak compatibility and proven field reliability are prioritized.

Availability

IRLR7843TRLPBF is available at Aetrix Electronics and suitable for server VRMs, telecom DC-DC converters, and industrial PLC power supplies requiring stable component supply and long-term manufacturing continuity.

Supply support for IRLR7843TRLPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to ISO/TS 16949 and IATF 16949.

The IRLR series targets high-efficiency, high-reliability power conversion in computing and communications infrastructure, emphasizing low R_DS(on), robust avalanche capability, and thermal performance in surface-mount packages.

FAQ

What is the maximum continuous drain current at 100°C case temperature?

The IRLR7843TRLPBF supports 30 A continuous drain current at T_C = 25°C and derates linearly to 71 A at T_C = 100°C per the datasheet's Safe Operating Area curve. This reflects its 1.05 °C/W R_θJC and 3.3 mΩ R_DS(on), enabling high-current operation when mounted on adequately sized copper planes or heatsinks.

Does this MOSFET require a gate resistor for stability in synchronous buck applications?

Yes - a 2.2–10 Ω gate resistor is recommended to dampen ringing caused by PCB trace inductance interacting with Q_g and C_iss. The device's low Q_gd (12 nC) and high C_iss (4380 pF) make it susceptible to oscillation without proper gate loop control, especially at >300 kHz switching frequencies.

Can IRLR7843TRLPBF be used as a high-side switch with 5 V logic-level drive?

No - its V_GS(th) range (1.4–2.3 V) and R_DS(on) specification assume ≥4.5 V drive. At exactly 5 V, R_DS(on) rises to ~4.0 mΩ (max), increasing conduction loss by >50%. For reliable high-side use, a dedicated gate driver with ≥8 V output or bootstrap circuit is required.

Is the body diode suitable for freewheeling in non-synchronous designs?

Yes - the intrinsic body diode is fully characterized with t_rr = 39–59 ns and Q_rr = 36–54 nC, making it viable for low-frequency (<100 kHz) freewheeling. However, its V_SD of ≤1.0 V at 12 A is higher than Schottky alternatives, so efficiency will be 3–5% lower than using an external 40 V Schottky in the same application.