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Infineon Technologies IRLR7843TRRPBF
- Part No.:
- IRLR7843TRRPBF
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Datasheet:
-
IRLR7843TRRPBF.pdf
- Description:
- MOSFET N-CH 30V 161A DPAK
- Quantity:
- Payment:
- Shipping:
Inventory:9,464
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Product details
Overview
IRLR7843TRRPBF from Infineon Technologies is a 30V, 120A N-channel D-Pak power MOSFET optimized for high-frequency synchronous buck converters in CPU VRMs and telecom DC-DC modules. It delivers 2.6 mΩ RDS(on) at VGS = 10 V, 34 nC total gate charge, and 1.05 °C/W junction-to-case thermal resistance - enabling efficient 4.5–10 V gate drive operation in high-density power stages.
For engineers reviewing the IRLR7843TRRPBF datasheet, IRLR7843TRRPBF pinout, IRLR7843TRRPBF application, or IRLR7843TRRPBF equivalent, key selection criteria include low RDS(on) at 4.5 V, fully characterized avalanche capability (1440 mJ EAS), body diode reverse recovery charge (Qrr = 36–54 nC), and D-Pak thermal performance for PCB-mount power delivery designs.
Technical Context
This HEXFET device uses planar stripe cell structure with optimized gate oxide thickness to achieve ultra-low gate impedance and fast switching (tr = 42 ns, tf = 19 ns). Its RDS(on) exhibits +19 mV/°C temperature coefficient and remains stable up to TJ = 175°C, supporting continuous conduction mode operation in thermally constrained environments.
The integrated body diode features VSD ≤ 1.0 V at 12 A and trr = 39–59 ns with soft recovery characteristics - critical for minimizing shoot-through risk and reducing voltage spikes during synchronous rectification in isolated and non-isolated topologies.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 30 V - supports 12 V input rails with 2× safety margin against transient overvoltage in server VRMs |
| RDS(on) max @ 10 V | 3.3 mΩ - enables <1.2 W conduction loss at 120 A DC in high-current CPU core phases |
| Qg | 34 nC - reduces gate drive power and allows use of low-current PWM controllers (e.g., IR35201) |
| EAS | 1440 mJ - withstands unclamped inductive energy during startup/fault without failure in buck converter switches |
| Ciss | 4380 pF - balances switching speed and EMI control in 300–1000 kHz operating range |
| Qrr | 36–54 nC - limits cross-conduction losses when paired with control FET in synchronous rectification |
| RθJC | 1.05 °C/W - permits >100 W dissipation with minimal heatsink on 2-oz copper D-Pak footprint |
Pinout & Package
D-Pak (TO-252AA) package with exposed drain pad for direct PCB thermal coupling and mechanical stability under thermal cycling.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 (Source) | Source terminal (S) | Low-side reference node; connects to ground plane or output inlay for minimal loop inductance |
| Pin 2 (Gate) | Control input (G) | High-impedance MOSFET gate requiring <10 Ω series resistor to suppress ringing |
| Pin 3 (Drain) | Power output (D) | Exposed metal tab - must be soldered to large copper pour for thermal and current path integrity |
Key Features
| Feature | Design Value |
|---|---|
| Ultra-low RDS(on) at 4.5 V | 4.0 mΩ - enables direct drive from 5 V logic-level controllers without level-shifting |
| Fully characterized avalanche | 1440 mJ single-pulse rating - eliminates need for external snubbers in hard-switched topologies |
| Low Qgd/Qgs1 ratio | 12 nC / 9.1 nC ≈ 1.32 - suppresses Cdv/dt turn-on during high dV/dt node transitions |
| Body diode soft recovery | trr = 39–59 ns with low Qrr - reduces voltage overshoot and EMI in synchronous rectifier applications |
Applications
| Server CPU Voltage Regulator Modules | Telecom 48 V Input DC-DC Converters |
|---|---|
Use Scenario: High-current, multi-phase buck converter supplying 0.8–1.8 V at up to 200 A to Intel/AMD processors. IC Role / Device Role / Timing Role: Synchronous FET in low-side position, switching at 300–600 kHz with precise dead-time control. Use Value: 2.6 mΩ RDS(on) and 34 nC Qg reduce both conduction and gate drive losses, improving full-load efficiency by ≥1.2% vs. legacy 5 mΩ devices. | Use Scenario: Isolated forward or LLC converter with synchronous rectification on secondary side. IC Role / Device Role / Timing Role: Secondary-side rectifier MOSFET, replacing Schottky diodes in 12 V or 5 V output stages. Use Value: 1.0 V VSD and 36 nC Qrr cut conduction loss by 40% and reduce transformer stress compared to 0.5 A Schottky alternatives. |
| Industrial Motor Drive Gate Drivers | Automotive ADAS Power Supplies |
Use Scenario: Half-bridge high-side switch in 24 V BLDC motor gate driver IC auxiliary supply. IC Role / Device Role / Timing Role: Low-loss, high-reliability switch for generating isolated 15 V gate bias from main bus. Use Value: 175°C TJ rating and 1440 mJ EAS ensure robustness during motor stall or short-circuit events without derating. | Use Scenario: Compact 12 V → 3.3 V point-of-load regulator powering radar sensor SoCs. IC Role / Device Role / Timing Role: Primary switch in monolithic buck controller reference design meeting AEC-Q101 stress requirements. Use Value: Lead-free D-Pak package and -55°C to +175°C TSTG/TJ range support automotive qualification without redesign. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRLR3714PBF | RDS(on) = 4.5 mΩ @ 10 V; Qg = 21 nC; lower current rating (80 A) | Better gate drive efficiency but higher conduction loss above 60 A | Select for space-constrained 40–60 A loads where gate drive power dominates |
| SI7842DP-T1-GE3 | RDS(on) = 2.3 mΩ @ 10 V; Qg = 45 nC; SO-8 package with higher RθJA | Lower RDS(on) but limited thermal dissipation in surface-mount layout | Select only with forced airflow or when board area prohibits D-Pak mounting |
Compared with IRLR7843TRRPBF, IRLR3714PBF trades conduction loss for reduced gate drive burden, while SI7842DP-T1-GE3 improves RDS(on) at the cost of thermal headroom - making the IRLR7843TRRPBF optimal for balanced high-current, high-efficiency D-Pak deployments.
Availability
IRLR7843TRRPBF is available at Aetrix Electronics and suitable for server CPU VRMs, telecom DC-DC converters, and industrial motor drive gate drivers requiring stable component supply across multi-year production cycles.
Supply support for IRLR7843TRRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor leader specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to ISO/TS 16949 and IATF 16949.
This device belongs to Infineon's HEXFET Power MOSFET product line, engineered specifically for high-efficiency, high-frequency DC-DC conversion in computing, communications, and industrial power systems.
FAQ
Is IRLR7843TRRPBF suitable for 5 V gate drive applications?
Yes - its RDS(on) is specified at 4.5 V (4.0 mΩ max), and VGS(th) ranges from 1.4 V to 2.3 V, ensuring full enhancement with standard 5 V logic outputs. Gate threshold stability over temperature (−5.4 mV/°C) prevents unintended turn-off at elevated junction temperatures.
What is the maximum continuous drain current at 100°C case temperature?
The datasheet specifies 71 A continuous drain current at TC = 100°C with VGS = 10 V. This reflects thermal limitation of the D-Pak package rather than silicon capability, and assumes adequate PCB copper area per Infineon's layout guidelines (≥10 cm² 2-oz copper).
Does IRLR7843TRRPBF have avalanche ruggedness rated for repetitive operation?
No - the datasheet provides only single-pulse avalanche energy (EAS = 1440 mJ). Repetitive avalanche is not characterized or guaranteed; designers must avoid repeated inductive switching events and implement proper clamping or snubber circuits if such conditions exist.
Can this MOSFET replace IRLU7843PbF in existing designs?
Yes - both share identical electrical specs and D-Pak package, but IRLR7843TRRPBF is tape-and-reel packaged (TRR) with Pb-free (PbF) finish, while IRLU7843PbF uses I-Pak. Mechanical compatibility requires verifying PCB footprint and thermal pad alignment; no circuit revalidation is needed for electrical performance.
IRLR7843TRRPBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®
- Package/Case:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 161A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 3.3mOhm @ 15A, 10V
- Vgs(th) (Max) @ Id:
- 2.3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 50 nC @ 4.5 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 4380 pF @ 15 V
- FET Feature:
- -
- Power Dissipation (Max):
- 140W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TO-252AA (DPAK)
IRLR7843TRRPBF FAQ
1.How can I place an order for IRLR7843TRRPBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRLR7843TRRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRLR7843TRRPBF reliable?
The price and inventory of IRLR7843TRRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRLR7843TRRPBF is usually 5 days.
3.What payment methods are accepted for IRLR7843TRRPBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRLR7843TRRPBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRLR7843TRRPBF?
IRLR7843TRRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRLR7843TRRPBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRLR7843TRRPBF?
For technical support, including IRLR7843TRRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRLR7843TRRPBF requirements.
6.How does Aetrix verify that IRLR7843TRRPBF is sourced from the original manufacturer or authorized distributors?
All IRLR7843TRRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRLR7843TRRPBF meets industry standards.
7.What is the process for return or replacement of IRLR7843TRRPBF?
All IRLR7843TRRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRLR7843TRRPBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRLR7843TRRPBF part is unused and in its original packaging.
Return procedure for IRLR7843TRRPBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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