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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRLR8103TR

Name: IRLR8103TR
Brand: Infineon Technologies
SKU: IRLR8103TR
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRLR8103TR

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: IRLR8103TR.pdf

Description:: MOSFET N-CH 30V 89A DPAK

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRLR8103TR from Infineon Technologies (formerly International Rectifier) is an N-channel enhancement-mode power MOSFET in TO-252AA (D-Pak) package, optimized as the synchronous rectifier FET in high-frequency DC-DC buck converters for CPU core voltage regulation. It delivers 6 mΩ R_DS(on) at V_GS = 10 V, 45 nC total gate charge, and 20.3 nC switching charge, enabling high-efficiency operation with strong C_dv/dt immunity up to 16 V.

For engineers reviewing the IRLR8103TR datasheet, IRLR8103TR pinout, IRLR8103TR application, or IRLR8103TR equivalent, key selection criteria include low R_DS(on) at 4.5 V gate drive, body diode reverse recovery charge (Q_rr = 100 nC), thermal resistance (R_θJA = 50 °C/W on 1-in² copper), and D-Pak soldering compatibility for high-power PCB layouts.

Technical Context

This device is engineered specifically for synchronous rectification in multiphase VRMs powering modern microprocessors. Its low 6 mΩ on-resistance at 10 V and 7 mΩ at 4.5 V enables minimal conduction loss under heavy load, while its 45 nC gate charge and 20.3 nC switch charge support efficient high-frequency switching above 300 kHz.

The MOSFET features robust C_dv/dt-induced turn-on immunity-100% tested per synchronous buck requirements-and a fast, soft-recovery body diode (Q_rr = 100 nC, t_rr typ. ~77 ns) that reduces shoot-through risk and EMI during dead-time transitions.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - supports input rails up to 24 V in buck converters with margin
R_DS(on) @ V_GS=10 V	6 mΩ - enables ≤1.5 W conduction loss at 20 A continuous drain current
R_DS(on) @ V_GS=4.5 V	7 mΩ - ensures stable on-state performance with logic-level gate drivers
Q_G	45 nC - determines gate driver power requirement and switching speed trade-off
Q_sw	20.3 nC - directly impacts turn-on/turn-off energy loss in high-frequency operation
Q_rr	100 nC - quantifies body diode recovery loss and influences dead-time optimization
R_θJA	50 °C/W - defines maximum power dissipation (≤42 W at T_L = 90°C) on standard PCB mount

Pinout & Package

IRLR8103TR uses the TO-252AA (D-Pak) surface-mount package with exposed drain pad for enhanced thermal performance. The package supports vapor phase, infrared, convection, and wave soldering.

Pin/Terminal	Circuit Role	Design Meaning
1 - Gate	Control terminal	Receives PWM signal; requires <45 nC charge to fully enhance; sensitive to ESD
2 - Drain	Power output node	Connected to output inductor node; electrically tied to exposed metal tab for thermal path
3 - Source	Reference and return path	Serves as local ground reference for gate drive; carries full load current back to input capacitor
4 - Drain (Tab)	Thermal & electrical connection	Exposed copper pad; must be soldered to large copper pour for R_θJC = 1.4 °C/W thermal path

Key Features

Feature	Design Value
Ultra-low R_DS(on) at 4.5 V	7 mΩ - ensures reliable enhancement with 5 V or 3.3 V gate drivers in VRM designs
High C_dv/dt immunity	100% tested - prevents false turn-on during high dV/dt transitions in synchronous rectifier position
Optimized body diode Q_rr	100 nC - reduces reverse recovery loss and associated ringing in high-current buck phases
D-Pak thermal design	R_θJC = 1.4 °C/W - allows >40 W power dissipation with proper PCB copper area and airflow

Applications

Server CPU Voltage Regulator

AI Accelerator Power Stage

Use Scenario: Multiphase synchronous buck converter delivering 0.8–1.2 V @ up to 200 A to high-performance Xeon or EPYC processors.

IC Role / Device Role / Timing Role: Synchronous rectifier FET operating in complementary duty cycle with control FET; conducts during low-side interval.

Use Value: 6 mΩ R_DS(on) minimizes conduction loss at high current; 45 nC Q_G enables fast switching without excessive gate drive loss.

Use Scenario: High-density VRM on GPU/AI card PCBs where space and thermal density constrain component selection.

IC Role / Device Role / Timing Role: Low-side power switch in compact 3-phase or 4-phase buck stages feeding ASIC core rails.

Use Value: TO-252AA footprint provides superior thermal performance vs. SO-8; R_θJA = 50 °C/W supports >40 W dissipation on limited board area.

Industrial PLC Core Supply

Automotive ADAS Domain Controller

Use Scenario: 12 V input to 1.0 V/30 A output buck converter powering ARM-based real-time controllers in harsh industrial environments.

IC Role / Device Role / Timing Role: Synchronous rectifier in isolated or non-isolated point-of-load regulator with extended temperature operation.

Use Value: –55 to 150 °C junction range and 100% tested R_DS(on)/Q_rr ensure reliability across wide ambient conditions.

Use Scenario: 12 V to 1.1 V/45 A buck stage supplying SoC in autonomous driving domain controller with functional safety constraints.

IC Role / Device Role / Timing Role: High-current synchronous FET in ASIL-B compliant power delivery network.

Use Value: Low Q_rr and high C_dv/dt immunity reduce transient-induced faults; JEDEC TO-252AA qualification supports automotive reflow profiles.

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous rectifier MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRLR8721PBF	R_DS(on) = 4.2 mΩ @ 10 V; Q_G = 32 nC; Q_sw = 14.5 nC; TO-252AA	Lower conduction loss but reduced C_dv/dt immunity testing coverage	Preferred when efficiency at light-to-mid load dominates; verify layout immunity in high-dV/dt nodes
SiR872DP	R_DS(on) = 4.5 mΩ @ 10 V; Q_G = 36 nC; Q_sw = 15.8 nC; PowerPAK® SO-8L	Smaller footprint, higher R_θJA (~62 °C/W); no exposed drain tab	Selected for space-constrained boards where thermal management via heatsink is impractical

Compared with IRLR8103TR, IRLR8721PBF offers lower R_DS(on) and gate charge but less documented C_dv/dt immunity validation, while SiR872DP trades thermal performance for footprint reduction-making IRLR8103TR optimal where robustness and PCB-level thermal design are prioritized.

Availability

IRLR8103TR is available at Aetrix Electronics and suitable for server CPU voltage regulators, AI accelerator power stages, and industrial PLC core supplies requiring stable component supply and long-term production continuity.

Supply support for IRLR8103TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader specializing in power management, sensor, and automotive ICs, with deep expertise in silicon and wide-bandgap power devices.

The HEXFET® power MOSFET product line-including IRLR8103TR-is designed specifically for high-efficiency, high-current DC-DC conversion in computing, communications, and industrial power systems.

FAQ

What is the maximum continuous drain current for IRLR8103TR at 90°C case temperature?

The maximum continuous drain current is 61 A at T_L = 90°C, as specified in the Absolute Maximum Ratings table. This rating assumes proper PCB copper area for heat spreading and accounts for thermal derating beyond 25°C ambient. It is not limited by package current-carrying capacity alone but by junction temperature limits (T_J ≤ 150°C).

Does IRLR8103TR require a gate resistor for safe operation in synchronous buck converters?

A gate resistor (typically 1–10 Ω) is recommended to dampen gate ringing and limit peak gate current during fast switching. With 45 nC total gate charge and typical driver rise times <20 ns, uncontrolled gate drive can cause oscillation and increased EMI. The resistor value must balance switching speed against ringing suppression and driver capability.

Can IRLR8103TR be used as the high-side (control) FET in a buck converter?

No-it is optimized as a low-side synchronous rectifier FET. Its gate threshold voltage (2.0–4.0 V) and R_DS(on) profile favor enhancement with referenced source potential. For high-side use, a level-shifted gate driver and higher V_GS margin are required; the IRLR8503 (lower Q_sw, higher V_GS(th)) is better suited for control FET roles.

Is the TO-252AA package of IRLR8103TR compatible with standard reflow soldering profiles?

Yes-the TO-252AA package is qualified for lead-free reflow per J-STD-020. Peak temperature must not exceed 260°C for ≤10 seconds. The exposed drain pad requires adequate stencil aperture and solder paste volume to ensure void-free thermal interface; IPC-7351B land pattern is recommended for optimal solder joint reliability.

IRLR8103TR Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 89A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 7mOhm @ 15A, 10V

Vgs(th) (Max) @ Id:: 2V @ 250µA (Min)

Gate Charge (Qg) (Max) @ Vgs:: 50 nC @ 5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: -

FET Feature:: -

Power Dissipation (Max):: 89W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-252AA (DPAK)

IRLR8103TR FAQ

1.How can I place an order for IRLR8103TR through Aetrix?

Please submit a Request for Quotation (RFQ) for IRLR8103TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRLR8103TR reliable?

The price and inventory of IRLR8103TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRLR8103TR is usually 5 days.

3.What payment methods are accepted for IRLR8103TR?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRLR8103TR transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRLR8103TR?

IRLR8103TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRLR8103TR order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRLR8103TR?

For technical support, including IRLR8103TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRLR8103TR requirements.

6.How does Aetrix verify that IRLR8103TR is sourced from the original manufacturer or authorized distributors?

All IRLR8103TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRLR8103TR meets industry standards.

7.What is the process for return or replacement of IRLR8103TR?

All IRLR8103TR units undergo pre-shipment inspection (PSI). If there is an issue with IRLR8103TR, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRLR8103TR part is unused and in its original packaging.

Return procedure for IRLR8103TR:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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