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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRLR8103VPBF

Name: IRLR8103VPBF
Brand: Infineon Technologies
SKU: IRLR8103VPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRLR8103VPBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: IRLR8103VPBF.pdf

Description:: MOSFET N-CH 30V 91A DPAK

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Product details

Overview

IRLR8103VPBF from Infineon Technologies (formerly International Rectifier) is an N-channel enhancement-mode power MOSFET in D-Pak (TO-252) package, rated for 30 V V_DS, 7.9 mΩ R_DS(on) at V_GS = 4.5 V, 27 nC total gate charge, and 91 A continuous drain current at T_C = 25°C. It is optimized for synchronous buck converters in CPU core DC-DC applications.

For engineers reviewing the IRLR8103VPBF datasheet, IRLR8103VPBF pinout, IRLR8103VPBF application, or IRLR8103VPBF equivalent, key selection criteria include low R_DS(on)/Q_G ratio, body diode Q_rr = 103 nC, C_iss = 2672 pF, and thermal resistance R_θJC = 1.09°C/W - all critical for high-efficiency, high-frequency point-of-load regulation.

Technical Context

This MOSFET employs HEXFET technology with optimized charge distribution to minimize both conduction loss (via 7.9 mΩ R_DS(on) at 4.5 V drive) and switching loss (Q_SW = 12 nC, Q_OSS = 29 nC). Its gate threshold voltage (V_GS(th) = 1.0–3.0 V) supports logic-level drive from 3.3 V/5 V controllers.

The device features a robust body diode with V_SD = 0.9–1.3 V at 15 A and reverse recovery charge Q_rr = 103 nC under clamped inductive load conditions (di/dt ≈ 700 A/µs), enabling reliable synchronous rectification without external Schottky parallel in many designs.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Maximum blocking voltage compatible with 24 V input rails and transient margin in CPU VRMs.
R_DS(on) @ V_GS = 4.5 V	7.9 mΩ - Enables <1 W conduction loss at 15 A, reducing thermal stress in compact VRM layouts.
Q_G	27 nC - Low gate charge allows fast turn-on with moderate gate driver strength (e.g., IR35201).
Q_SW	12 nC - Minimizes energy loss during hard-switching transitions in 300–1000 kHz buck converters.
R_θJC	1.09 °C/W - Enables >60 W power dissipation with modest heatsinking on PCB copper.
Q_OSS	29 nC - Reduces turn-off loss and improves light-load efficiency in synchronous FET operation.
V_GS(th)	1.0–3.0 V - Ensures reliable enhancement-mode turn-on with standard logic-level PWM controllers.

Pinout & Package

D-Pak (TO-252) package: surface-mount, single-die layout with exposed drain pad for thermal and electrical connection. Pin 1 = Gate, Pin 2 = Drain (tab), Pin 3 = Source.

Pin/Terminal	Circuit Role	Design Meaning
Gate (G)	Control terminal	Receives PWM signal; low input capacitance (C_iss = 2672 pF) eases driver design.
Drain (D)	High-side switch node / output	Connected to PCB copper pour for heat sinking; electrically tied to package tab.
Source (S)	Reference node / return path	Provides low-impedance return for load current and gate drive loop; ties to power ground plane.

Key Features

Feature	Design Value
Ultra-low R_DS(on)/Q_G ratio	Enables higher efficiency than legacy 30 V MOSFETs at 500 kHz+ switching frequencies.
100% R_G tested	Guarantees gate resistance between 0.8–3.1 Ω, ensuring consistent switching timing across production lots.
Optimized for synchronous buck topologies	Low Q_SW/Q_OSS and C_dv/dt-induced turn-on immunity reduce shoot-through risk in high dV/dt nodes.
Lead-free (Pb-free) construction	Complies with RoHS Directive 2011/65/EU; compatible with vapor phase, IR, convection, and wave soldering.

Applications

CPU Core Voltage Regulator

GPU Power Delivery

Use Scenario: High-current, multi-phase buck converter supplying 0.8–1.5 V to modern x86 or ARM processors under dynamic load transients up to 300 A/µs.

IC Role / Device Role: Synchronous rectifier (low-side FET) delivering high efficiency and fast transient response.

Use Value: 7.9 mΩ R_DS(on) and 12 nC Q_SW reduce total power loss by ≥15% vs. comparable 30 V MOSFETs at 1 MHz operation.

Use Scenario: Compact, thermally constrained VRM on graphics card PCB powering GPU cores with peak currents >200 A.

IC Role / Device Role: Control FET (high-side) in dual-MOSFET power stage with integrated driver IC.

Use Value: Low Q_G (27 nC) enables clean 50 ns turn-on delay and tight dead-time control, minimizing shoot-through losses.

Server Memory Regulator

AI Accelerator Board Supply

Use Scenario: Point-of-load regulator for DDR5 memory modules requiring stable 1.1 V supply with <10 mV ripple under 50 A step loads.

IC Role / Device Role: Low-side synchronous FET in 2-phase interleaved buck converter.

Use Value: Body diode Q_rr = 103 nC and V_SD = 0.9 V ensure minimal reverse recovery loss and low forward drop during discontinuous conduction mode.

Use Scenario: Dedicated 0.75 V supply rail for AI inference ASICs with aggressive thermal limits and high current density (>100 A/in²).

IC Role / Device Role: High-current power switch in multiphase VRM with direct copper thermal path.

Use Value: R_θJC = 1.09 °C/W allows >60 W dissipation with 40°C rise over ambient using 2 oz copper and thermal vias - eliminating need for external heatsink.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRL8113PBF	R_DS(on) = 8.5 mΩ @ 4.5 V; Q_G = 29 nC; same D-Pak package.	Slightly higher conduction loss; identical footprint and drive requirements.	Select when tighter R_DS(on) tolerance (±10%) is required - IRL8113PBF has tighter spec binning.
SiR872DP-T1-GE3	R_DS(on) = 7.2 mΩ @ 4.5 V; Q_G = 32 nC; PowerPAK SO-8 package (not D-Pak).	Lower R_DS(on) but higher Q_G; requires PCB redesign due to different footprint and thermal interface.	Prefer for new designs prioritizing lowest possible conduction loss where board space permits SO-8 layout.

Compared with IRLR8103VPBF, IRL8113PBF trades marginal R_DS(on) increase for tighter parametric consistency, while SiR872DP-T1-GE3 delivers lower on-resistance at the cost of higher gate drive demand and non-drop-in packaging - making IRLR8103VPBF optimal for D-Pak-restricted, cost-sensitive CPU VRM upgrades.

Availability

IRLR8103VPBF is available at Aetrix Electronics and suitable for CPU core voltage regulators, GPU power delivery systems, and AI accelerator board supplies requiring stable component supply, long-term lifecycle support, and RoHS-compliant manufacturing.

Supply support for IRLR8103VPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies acquired International Rectifier in 2015 and continues its legacy of high-performance power semiconductors for computing, industrial, and automotive applications.

The IRLR8103VPBF belongs to the HEXFET® logic-level N-channel MOSFET product line, engineered specifically for high-efficiency, high-frequency DC-DC conversion in microprocessor and graphics processor power delivery.

FAQ

Is IRLR8103VPBF suitable for 3.3 V gate drive?

Yes. With V_GS(th) ranging from 1.0 V to 3.0 V and R_DS(on) = 7.9 mΩ specified at V_GS = 4.5 V, the device fully enhances under 3.3 V drive in most practical layouts - though R_DS(on) rises to ~10.5 mΩ per datasheet max, requiring thermal verification at full load.

What is the maximum recommended PCB copper area for thermal performance?

For optimal thermal performance, use ≥1 inch² of 2 oz copper connected directly to the drain tab via ≥6 thermal vias (0.3 mm diameter, filled or plated). This achieves near-rated R_θJA = 50°C/W and supports >60 W continuous dissipation at T_C = 90°C per datasheet Fig 9.

Does IRLR8103VPBF require a gate resistor for stability?

A gate resistor (typically 2–10 Ω) is recommended to dampen ringing caused by gate loop inductance and prevent spurious turn-on from high dv/dt. The device's 0.8–3.1 Ω intrinsic R_G helps, but external series resistance ensures robust timing control in high-speed synchronous buck stages.

Can IRLR8103VPBF replace IRLR8103PBF in existing designs?

Yes - IRLR8103VPBF is the lead-free (Pb-free) version of IRLR8103PBF, with identical electrical specifications, pinout, and thermal characteristics. The "V" suffix denotes enhanced process control and 100% R_G testing; no layout or firmware changes are needed for drop-in replacement.

IRLR8103VPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tube

Product Status:: Discontinued at Digi-Key

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 91A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 9mOhm @ 15A, 10V

Vgs(th) (Max) @ Id:: 3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 27 nC @ 5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2672 pF @ 16 V

FET Feature:: -

Power Dissipation (Max):: 115W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-252AA (DPAK)

IRLR8103VPBF FAQ

1.How can I place an order for IRLR8103VPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRLR8103VPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRLR8103VPBF reliable?

The price and inventory of IRLR8103VPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRLR8103VPBF is usually 5 days.

3.What payment methods are accepted for IRLR8103VPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRLR8103VPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRLR8103VPBF?

IRLR8103VPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRLR8103VPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRLR8103VPBF?

For technical support, including IRLR8103VPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRLR8103VPBF requirements.

6.How does Aetrix verify that IRLR8103VPBF is sourced from the original manufacturer or authorized distributors?

All IRLR8103VPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRLR8103VPBF meets industry standards.

7.What is the process for return or replacement of IRLR8103VPBF?

All IRLR8103VPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRLR8103VPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRLR8103VPBF part is unused and in its original packaging.

Return procedure for IRLR8103VPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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