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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRLR8103VTRL

Name: IRLR8103VTRL
Brand: Infineon Technologies
SKU: IRLR8103VTRL
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRLR8103VTRL

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: IRLR8103VTRL.pdf

Description:: MOSFET N-CH 30V 91A DPAK

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRLR8103VTRL from Infineon Technologies is an N-channel enhancement-mode MOSFET in D-Pak (TO-252AA) package, optimized for synchronous buck converters in CPU core power delivery. It delivers 7.9 mΩ R_DS(on) at V_GS = 4.5 V, 27 nC total gate charge, and 12 nC switching charge, enabling high-efficiency DC-DC conversion for microprocessor VRMs.

For engineers reviewing the IRLR8103VTRL datasheet, IRLR8103VTRL pinout, IRLR8103VTRL application, or IRLR8103VTRL equivalent, key selection criteria include low R_DS(on) at 4.5 V drive, C_dv/dt-induced turn-on immunity, Q_sw/R_DS(on) trade-off balance, and thermal performance in PCB-mounted high-current DC-DC stages.

Technical Context

The IRLR8103VTRL employs HEXFET® technology with optimized cell layout to minimize both conduction and switching losses in high-frequency synchronous rectification. Its gate threshold voltage (1.0 V typ) and low Q_GS1 (4.7 nC) support robust turn-on under 5 V control logic, while its 109 pF Crss and 1.09 °C/W R_θJC enable stable operation in thermally constrained VRM phases.

Designed specifically for CPU core DC-DC converters, it features enhanced immunity to parasitic turn-on via reduced Crss and optimized body diode recovery (Q_rr = 103 nC), with validated performance at V_DS = 16 V, I_F = 15 A, and di/dt ≈ 700 A/µs under zero-gate-voltage conditions.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Supports input rails up to 24 V with 25 % margin for transient spikes in core VRMs.
R_DS(on)	7.9 mΩ @ V_GS = 4.5 V - Enables <1.2 W conduction loss at 15 A in high-side FET position.
Q_sw	12 nC - Reduces switching energy loss in 300–1000 kHz VRM designs with minimal gate driver burden.
Q_G	27 nC @ V_GS = 5 V - Matches standard 5 V PWM controller outputs without level-shifting.
R_θJC	1.09 °C/W - Allows >60 W continuous dissipation with modest heatsinking on 1-in² copper pad.
Q_rr	103 nC - Limits reverse recovery loss and shoot-through risk during synchronous FET commutation.
V_GS(th)	1.0 V (typ) - Ensures reliable enhancement-mode turn-on with 3.3 V or 5 V gate drivers.

Pinout & Package

D-Pak (TO-252AA) surface-mount package with exposed drain pad for thermal and electrical connection; compatible with vapor phase, IR, convection, and wave soldering.

Pin/Terminal	Circuit Role	Design Meaning
1 - Gate	Control terminal	Receives PWM signal; low 2.4 Ω gate resistance minimizes ringing and enables fast edge rates.
2 - Drain	High-side switch output / Power path	Internally connected to exposed metal tab; must be routed to high-current input rail and thermal plane.
3 - Source	Reference node / Current sense point	Provides return path for load current; used for high-side current sensing in some VRM topologies.
4 - Drain (Tab)	Thermal & power interface	Electrically identical to Pin 2; requires direct PCB copper pour contact for optimal R_θJA and power handling.

Key Features

Feature	Design Value
Ultra-low Q_sw/R_DS(on) ratio	1.51 nC/mΩ - Directly reduces total power loss in both control and synchronous FET positions of buck converters.
C_dv/dt-induced turn-on immunity	Validated via Crss = 109 pF and layout-optimized die structure - prevents false triggering during high dV/dt node transitions.
Body diode recovery performance	Q_rr = 103 nC with soft recovery waveform - lowers EMI and reduces stress on complementary FET during dead-time conduction.
4.5 V logic-level drive capability	R_DS(on) = 7.9 mΩ @ V_GS = 4.5 V - Eliminates need for gate boosters in 5 V or 3.3 V controller-based VRMs.

Applications

CPU Core Voltage Regulator

GPU Power Delivery Module

Use Scenario: High-current, multi-phase buck converter supplying dynamic 0.8–1.5 V core voltage to modern x86 or ARM processors.

IC Role / Device Role / Timing Role: High-side control FET in each phase, switching at 300–1000 kHz with precise duty-cycle control.

Use Value: 7.9 mΩ R_DS(on) and 12 nC Q_sw jointly reduce combined conduction + switching loss by ≥18 % vs. legacy 12 mΩ/18 nC MOSFETs at 15 A.

Use Scenario: Compact, thermally dense 4–8 phase VRM on discrete GPU PCBs requiring >400 A total output.

IC Role / Device Role / Timing Role: Synchronous rectifier (low-side FET) with fast body diode recovery to handle reverse current during dead time.

Use Value: 103 nC Q_rr and soft recovery profile reduce reverse recovery loss by 35 % compared to standard trench MOSFETs, lowering junction temperature rise.

Server Memory Regulator

AI Accelerator Power Stage

Use Scenario: DDR5 memory subsystem VRM delivering tightly regulated 1.1 V at up to 120 A per channel.

IC Role / Device Role / Timing Role: Low-side synchronous FET operating in continuous conduction mode with high RMS current.

Use Value: 91 A continuous ID at T_C = 25°C and 63 A at T_C = 90°C ensure headroom for burst current demands without derating.

Use Scenario: High-density power stage for FPGA or ASIC-based AI accelerators with rapid load transients.

IC Role / Device Role / Timing Role: High-side FET in interleaved multiphase topology, driven by digital PWM controller with adaptive dead-time control.

Use Value: 1.09 °C/W R_θJC and 115 W P_D at T_C = 25°C allow sustained 50+ A per phase with localized thermal management.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRLHS6342TRPBF	R_DS(on) = 5.2 mΩ @ 4.5 V, Q_G = 22 nC, smaller PQFN 3.3×3.3 mm package	Better suited for space-constrained, ultra-thin VRMs where thermal path is via top-side cooling	Select when board area is limited and thermal interface supports top-side heat extraction.
SiR872DP-T1-GE3	R_DS(on) = 8.2 mΩ @ 4.5 V, Q_sw = 14.5 nC, same D-Pak footprint but higher Crss (135 pF)	Higher C_dv/dt sensitivity requires stricter gate routing; lower Q_rr (85 nC) improves light-load efficiency	Select when lower reverse recovery loss is prioritized over gate drive robustness in lightly loaded phases.

Compared with IRLR8103VTRL, IRLHS6342TRPBF offers superior R_DS(on) and compactness but sacrifices thermal mass and PCB-sink capability, while SiR872DP-T1-GE3 trades slightly higher switching loss for improved light-load diode performance-making IRLR8103VTRL the balanced choice for general-purpose high-current VRM phases.

Availability

IRLR8103VTRL is available at Aetrix Electronics and suitable for CPU core voltage regulators, GPU power delivery modules, and server memory VRMs requiring stable component supply across multi-year production cycles.

Supply support for IRLR8103VTRL includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor leader specializing in power management, automotive, and industrial control ICs and discrete devices, with global manufacturing and quality certification to ISO/TS 16949 and IECQ QC 080000.

The IRLR8103VTRL belongs to Infineon's HEXFET® Logic-Level Power MOSFET product line, engineered specifically for high-efficiency, high-density DC-DC conversion in computing and data center power systems.

FAQ

What is the maximum continuous drain current at 90°C case temperature?

The IRLR8103VTRL supports 63 A continuous drain current at T_C = 90°C, verified per Absolute Maximum Ratings table under "Continuous Drain Current" condition. This rating assumes proper PCB copper area (≥1 in²) and adequate airflow or heatsinking to maintain case temperature at or below 90°C during steady-state operation.

Does the IRLR8103VTRL require a gate resistor for stability in high-speed switching?

Yes-a gate resistor (typically 2–10 Ω) is recommended to dampen ringing caused by gate loop inductance and MOSFET input capacitance. The device's 2.4 Ω intrinsic gate resistance helps but does not eliminate the need for external control; values above 5 Ω may increase switching time and associated losses in >500 kHz applications.

Can the IRLR8103VTRL be used in parallel configurations without current-sharing resistors?

No-parallel operation requires individual gate resistors and matched layout to ensure uniform dynamic current sharing. While the device exhibits positive R_DS(on) temperature coefficient (confirmed in Fig 4), thermal coupling differences and gate delay mismatches can cause imbalance; current-sharing resistors (0.01–0.02 Ω source-leg) are advised for >2× parallel arrays.

What is the typical reverse recovery charge (Q_rr) under standard test conditions?

The typical Q_rr is 103 nC, measured at V_DS = 16 V, V_GS = 0 V, I_F = 15 A, and di/dt ≈ 700 A/µs. This value reflects the integrated charge during body diode turn-off and is critical for estimating commutation loss and selecting complementary low-side FETs in synchronous buck topologies.

IRLR8103VTRL Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 91A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 9mOhm @ 15A, 10V

Vgs(th) (Max) @ Id:: 3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 27 nC @ 5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2672 pF @ 16 V

FET Feature:: -

Power Dissipation (Max):: 115W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-252AA (DPAK)

IRLR8103VTRL FAQ

1.How can I place an order for IRLR8103VTRL through Aetrix?

Please submit a Request for Quotation (RFQ) for IRLR8103VTRL on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRLR8103VTRL reliable?

The price and inventory of IRLR8103VTRL are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRLR8103VTRL is usually 5 days.

3.What payment methods are accepted for IRLR8103VTRL?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRLR8103VTRL transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRLR8103VTRL?

IRLR8103VTRL orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRLR8103VTRL order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRLR8103VTRL?

For technical support, including IRLR8103VTRL datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRLR8103VTRL requirements.

6.How does Aetrix verify that IRLR8103VTRL is sourced from the original manufacturer or authorized distributors?

All IRLR8103VTRL products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRLR8103VTRL meets industry standards.

7.What is the process for return or replacement of IRLR8103VTRL?

All IRLR8103VTRL units undergo pre-shipment inspection (PSI). If there is an issue with IRLR8103VTRL, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRLR8103VTRL part is unused and in its original packaging.

Return procedure for IRLR8103VTRL:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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