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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRLR8103VTRLPBF

Name: IRLR8103VTRLPBF
Brand: Infineon Technologies
SKU: IRLR8103VTRLPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRLR8103VTRLPBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: IRLR8103VTRLPBF.pdf

Description:: MOSFET N-CH 30V 91A DPAK

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRLR8103VTRLPBF from Infineon Technologies (formerly International Rectifier) is an N-channel enhancement-mode power MOSFET in D-Pak (TO-252) package, rated for 30 V V_DS, 7.9 mΩ R_DS(on) at V_GS = 4.5 V, 27 nC total gate charge, and 91 A continuous drain current at T_C = 25°C. It is engineered for synchronous buck converters in CPU core power delivery.

For engineers reviewing the IRLR8103VTRLPBF datasheet, IRLR8103VTRLPBF pinout, IRLR8103VTRLPBF application, or IRLR8103VTRLPBF equivalent, key selection criteria include low R_DS(on)/Q_G ratio, body diode Q_rr = 103 nC, C_iss = 2672 pF, and thermal resistance R_θJC = 1.09 °C/W - all critical for high-efficiency, high-frequency DC-DC converter design.

Technical Context

This MOSFET employs HEXFET technology optimized for synchronous rectification in single-phase and multiphase CPU VRMs. Its gate threshold voltage (1.0–3.0 V) enables direct drive from 3.3 V or 5 V controllers, and its low Q_sw (12 nC) and Q_OSS (29 nC) minimize switching losses at >500 kHz operation.

The device features a robust body diode with V_SD = 0.9–1.3 V at 15 A and reverse recovery charge Q_rr = 103 nC under di/dt = 700 A/µs, supporting hard-switched and synchronous FET configurations without external Schottky assist in many designs.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - supports 12 V input rails with margin for transient spikes in CPU core supplies
R_DS(on)	7.9 mΩ @ V_GS = 4.5 V - enables <1 W conduction loss at 15 A, reducing heatsink requirements
Q_G	27 nC - determines gate driver power demand and switching speed in 300–1000 kHz VRMs
Q_SW	12 nC - governs turn-on/turn-off energy loss during hard switching transitions
R_θJC	1.09 °C/W - allows >60 W power dissipation with moderate heatsinking on PCB copper
Q_OSS	29 nC - impacts turn-off loss and resonant behavior in ZVS/ZCS topologies
I_D (T_C = 25°C)	91 A - supports high-current single-FET phases in compact VRM layouts

Pinout & Package

IRLR8103VTRLPBF uses the D-Pak (TO-252) surface-mount package with exposed drain pad for thermal and electrical performance. The package supports vapor phase, IR, convection, and wave soldering.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Source)	Source terminal (S)	Common return path for load current; tied to power ground plane in buck output stage
Pin 2 (Gate)	Control input (G)	Drives channel conduction; requires low-impedance gate driver due to 27 nC Q_G
Pin 3 (Drain)	Drain terminal (D)	Connected to input rail and inductor node; electrically and thermally coupled to large copper area

Key Features

Feature	Design Value
Ultra-low R_DS(on)/Q_G ratio	0.29 Ω·nC - improves figure-of-merit for high-frequency, high-current synchronous FETs
100% R_G tested	R_G = 0.8–3.1 Ω - ensures consistent gate drive timing and reduces risk of oscillation
Optimized for synchronous buck converters	Low Q_SW/Q_OSS and C_dv/dt-induced turn-on immunity - minimizes shoot-through and cross-conduction loss
Lead-free and RoHS-compliant	"PbF" suffix indicates lead-free termination - meets IPC-J-STD-020 moisture sensitivity level 1 (MSL1)

Applications

Server CPU Core VRM

Laptop CPU Voltage Regulator

Use Scenario: Single-phase or multi-phase buck converter delivering 0.8–1.5 V @ up to 120 A to Intel/AMD server CPUs.

IC Role / Device Role / Timing Role: Synchronous rectifier (low-side FET) operating at 300–600 kHz with tight dead-time control.

Use Value: 7.9 mΩ R_DS(on) reduces conduction loss by >25% vs. legacy 12 mΩ devices, enabling higher efficiency at full load.

Use Scenario: Compact dual-phase VRM powering mobile processors in thin-and-light notebooks with strict thermal envelope.

IC Role / Device Role / Timing Role: Control FET (high-side) driven directly from 5 V PWM controller with fast 10 ns t_d(on).

Use Value: 27 nC Q_G and 1.09 °C/W R_θJC allow high switching frequency without excessive gate drive loss or junction overheating.

GPU Power Delivery Module

ASIC Core Supply

Use Scenario: High-current, low-voltage power stage for discrete or integrated GPUs requiring dynamic current slew rates >200 A/µs.

IC Role / Device Role / Timing Role: Low-side synchronous FET handling bidirectional current during light-load discontinuous conduction mode (DCM).

Use Value: Body diode Q_rr = 103 nC and V_SD = 0.9 V enable efficient freewheeling with minimal reverse recovery loss.

Use Scenario: Point-of-load regulator for AI accelerator ASICs with 0.6–0.85 V output and peak currents >80 A.

IC Role / Device Role / Timing Role: Primary power switch in interleaved 3-phase buck topology operating at 1 MHz.

Use Value: C_iss = 2672 pF and Crss = 109 pF provide stable Miller plateau behavior and predictable gate drive timing.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRLR8729PBF	R_DS(on) = 4.5 mΩ @ 4.5 V, Q_G = 22 nC, V_DS = 30 V - lower on-resistance but higher cost and same package	Better suited for ultra-high-efficiency single-phase VRMs where <5 mΩ is required	Select when conduction loss dominates and board space permits identical D-Pak footprint
SI7850DP-T1-GE3	R_DS(on) = 8.5 mΩ @ 4.5 V, Q_G = 24 nC, R_θJC = 1.2 °C/W - slightly higher R_DS(on) and thermal resistance	Preferred in automotive infotainment power stages requiring AEC-Q101 qualification	Choose only if AEC-Q101 compliance is mandatory; otherwise IRLR8103VTRLPBF offers superior thermal performance

Compared with IRLR8729PBF and SI7850DP-T1-GE3, the IRLR8103VTRLPBF delivers the best balance of low R_DS(on), moderate Q_G, and industry-leading R_θJC, making it optimal for cost-sensitive, thermally constrained server and laptop VRMs where 7–8 mΩ performance is sufficient.

Availability

IRLR8103VTRLPBF is available at Aetrix Electronics and suitable for server CPU core VRMs, laptop voltage regulators, GPU power modules, and ASIC point-of-load supplies requiring stable component supply across long production cycles.

Supply support for IRLR8103VTRLPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader specializing in power management, sensor, and automotive ICs, with heritage from International Rectifier's power MOSFET innovation.

The IRLR8103VTRLPBF belongs to Infineon's HEXFET® N-channel logic-level MOSFET product line, designed specifically for high-efficiency, high-density DC-DC conversion in computing and communications infrastructure.

FAQ

Is IRLR8103VTRLPBF suitable for 3.3 V gate drive?

Yes. With V_GS(th) = 1.0–3.0 V and R_DS(on) = 7.9 mΩ specified at V_GS = 4.5 V, the device fully enhances under 3.3 V drive in most practical layouts - confirmed by typical transfer characteristics showing >50 A I_D at V_GS = 3.3 V and V_DS = 100 mV. Layout-dependent gate ringing must be controlled.

What is the maximum safe operating area (SOA) limitation at 100°C case temperature?

At T_C = 100°C, the absolute maximum continuous drain current is derated to 63 A per datasheet Fig 9. The SOA curve (Fig 8) shows that operation above 10 V V_DS is limited by R_DS(on) at pulse widths >1 ms, and by thermal limits at shorter pulses - confirming suitability for repetitive 100 µs pulses up to 91 A with proper heatsinking.

Does IRLR8103VTRLPBF require a gate resistor for stability?

Yes. Although R_G is internally tested (0.8–3.1 Ω), external gate resistors (typically 2–10 Ω) are recommended to dampen parasitic oscillation caused by PCB trace inductance interacting with C_iss = 2672 pF and Q_GD = 9.7 nC. This ensures clean switching waveforms and prevents unintended turn-on during high dv/dt events.

Can IRLR8103VTRLPBF replace IRLR8103PBF in existing designs?

Yes - IRLR8103VTRLPBF is the tape-and-reel, lead-free version of IRLR8103PBF with identical electrical specifications, package dimensions, and thermal performance. The "VTRLPBF" suffix denotes Pb-free, halogen-free, and RoHS-compliant packaging; no layout or schematic changes are required for drop-in replacement.

IRLR8103VTRLPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 91A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 9mOhm @ 15A, 10V

Vgs(th) (Max) @ Id:: 3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 27 nC @ 5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2672 pF @ 16 V

FET Feature:: -

Power Dissipation (Max):: 115W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-252AA (DPAK)

IRLR8103VTRLPBF FAQ

1.How can I place an order for IRLR8103VTRLPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRLR8103VTRLPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRLR8103VTRLPBF reliable?

The price and inventory of IRLR8103VTRLPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRLR8103VTRLPBF is usually 5 days.

3.What payment methods are accepted for IRLR8103VTRLPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRLR8103VTRLPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRLR8103VTRLPBF?

IRLR8103VTRLPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRLR8103VTRLPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRLR8103VTRLPBF?

For technical support, including IRLR8103VTRLPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRLR8103VTRLPBF requirements.

6.How does Aetrix verify that IRLR8103VTRLPBF is sourced from the original manufacturer or authorized distributors?

All IRLR8103VTRLPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRLR8103VTRLPBF meets industry standards.

7.What is the process for return or replacement of IRLR8103VTRLPBF?

All IRLR8103VTRLPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRLR8103VTRLPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRLR8103VTRLPBF part is unused and in its original packaging.

Return procedure for IRLR8103VTRLPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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