Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRLR8103VTRR

Name: IRLR8103VTRR
Brand: Infineon Technologies
SKU: IRLR8103VTRR
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: IRLR8103VTRR

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: IRLR8103VTRR.pdf

Description:: MOSFET N-CH 30V 91A DPAK

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:6,391

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

IRLR8103VTRR from Infineon Technologies is an N-channel enhancement-mode Power MOSFET in D-Pak (TO-252AA) package, optimized for synchronous buck converters in CPU core DC-DC applications. It delivers 7.9 mΩ R_DS(on) at V_GS = 4.5 V, 27 nC total gate charge, 12 nC switching charge, 30 V V_DS, and 91 A continuous drain current at T_C = 25°C.

For engineers reviewing the IRLR8103VTRR datasheet, IRLR8103VTRR pinout, IRLR8103VTRR application, or IRLR8103VTRR equivalent, key selection criteria include low Q_sw×R_DS(on) product for high-efficiency power stages, C_dv/dt-induced turn-on immunity, body diode reverse recovery performance (Q_rr = 103 nC), and thermal resistance (R_θJC = 1.09 °C/W).

Technical Context

This MOSFET employs HEXFET technology with planar gate structure to achieve simultaneous optimization of conduction loss (R_DS(on) = 7.9 mΩ @ 4.5 V), switching loss (Q_sw = 12 nC), and gate drive robustness (V_GS(th) = 1.0–2.5 V, Q_G = 27 nC @ 5 V). Its low Crss (109 pF) and high Ciss/Coss ratio support stable operation under fast dV/dt conditions typical in multiphase VRMs.

The device is characterized for synchronous FET operation with Q_G = 23 nC at V_GS = 5 V and V_DS < 100 mV, and features a body diode with V_SD = 0.9–1.3 V at I_S = 15 A and Q_rr = 103 nC under di/dt ≈ 700 A/µs - enabling efficient freewheeling with minimal voltage overshoot.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Maximum blocking voltage compatible with 24 V input rails and transient margin in notebook/desktop VRMs.
R_DS(on)	7.9 mΩ @ V_GS = 4.5 V - Enables <1 W conduction loss at 15 A, critical for high-current CPU core phases.
Q_sw	12 nC - Low switching charge reduces gate driver power and enables >1 MHz operation without excessive losses.
Q_G	27 nC @ V_GS = 5 V - Matches standard 5 V PWM controller outputs; supports direct drive from integrated drivers.
R_θJC	1.09 °C/W - Allows >60 W power dissipation with modest heatsinking, supporting high-density PCB layouts.
Q_rr	103 nC - Measured at di/dt ≈ 700 A/µs; ensures predictable body diode commutation in synchronous rectification.
I_D (cont)	91 A @ T_C = 25°C - Supports parallel-free designs up to ~120 A per phase with derating.

Pinout & Package

IRLR8103VTRR is housed in a surface-mount D-Pak (TO-252AA) package with exposed drain pad for thermal and electrical performance. The package supports vapor phase, IR, convection, and wave soldering; power dissipation exceeds 2 W on standard PCB mount.

Pin/Terminal	Circuit Role	Design Meaning
1 – Gate	Control terminal	Receives PWM signal; low input capacitance (C_iss = 2672 pF) minimizes driver loading.
2 – Drain	High-side switch node	Internally connected to exposed copper pad; serves as primary heat path and high-current output node.
3 – Source	Reference node / return path	Provides low-inductance source connection for gate driver loop; ties to power ground plane.
4 – Drain (tab)	Thermal & power path	Exposed metal pad electrically tied to Drain (Pin 2); must be soldered to large copper area for R_θJC = 1.09 °C/W.

Key Features

Feature	Design Value
Optimized Q_sw × R_DS(on)	95.3 mΩ·nC - Directly correlates to figure-of-merit for high-frequency synchronous FET efficiency.
C_dv/dt-induced turn-on immunity	Validated in synchronous buck topology - prevents false turn-on during high dV/dt transitions across drain-source.
Low gate threshold voltage	V_GS(th) = 1.0–2.5 V - Ensures full enhancement with 3.3 V or 5 V logic-level gate drivers.
Enhanced body diode recovery	Q_rr = 103 nC with soft recovery waveform - reduces EMI and voltage spikes during dead-time conduction.
Thermally robust D-Pak	R_θJC = 1.09 °C/W - Enables >60 W dissipation with single-layer thermal pad, eliminating need for clip or thermal vias.

Applications

Server VRM Phase

Laptop CPU Core Supply

Use Scenario: Multiphase buck converter delivering 1–2 V @ 100+ A to Xeon/EPYC processors in 1U servers.

IC Role / Device Role / Timing Role: Synchronous FET in high-side position; switches at 300–600 kHz with precise dead-time control.

Use Value: 7.9 mΩ R_DS(on) and 12 nC Q_sw reduce per-phase loss by ≥15% vs. legacy 12 mΩ devices, enabling 3-phase instead of 4-phase design.

Use Scenario: Dual-phase 1.0–1.3 V VRM powering Intel Core i7/i9 CPUs in ultrabooks with strict thermal envelope.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier; conducts during high-side off-time with body diode assist.

Use Value: Q_rr = 103 nC and V_SD = 0.9 V minimize reverse recovery loss and forward drop, improving light-load efficiency by 2.1%.

GPU Power Delivery

ASIC Core Rail

Use Scenario: High-current GPU VRM (e.g., NVIDIA A100) requiring rapid load transients and tight voltage regulation.

IC Role / Device Role / Timing Role: High-side control FET; driven by dedicated gate driver IC with adaptive dead-time control.

Use Value: Low Crss (109 pF) and high Ciss/Coss ratio suppress Miller-induced shoot-through, maintaining stability under 500 V/µs dV/dt.

Use Scenario: Custom ASIC core supply in AI accelerator cards operating at 0.75–0.85 V @ 80 A with <10 mV ripple spec.

IC Role / Device Role / Timing Role: Synchronous FET in interleaved 4-phase topology; operated at 800 kHz to shrink output filter size.

Use Value: 27 nC Q_G at 5 V allows direct drive from TI UCD7242, eliminating external level-shifting and reducing BOM count.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRLHS6342TRPBF	R_DS(on) = 5.2 mΩ @ 4.5 V, Q_G = 31 nC, TO-263 (D²Pak) package	Higher current density but larger footprint; requires more board area and higher gate drive energy	Preferred when R_DS(on) reduction outweighs layout constraints and gate driver capability
SiR872DP-T1-GE3	R_DS(on) = 8.2 mΩ @ 4.5 V, Q_sw = 14.5 nC, same D-Pak, Vishay Gen 3 trench MOSFET	Marginally higher switching loss; slightly better V_GS(th) distribution (1.2–2.2 V)	Selected for long-term supply continuity where Infineon's IRLR8103VTRR faces allocation or obsolescence risk

Compared with IRLR8103VTRR, IRLHS6342TRPBF offers lower conduction loss but demands higher gate drive power and occupies 30% more PCB area, while SiR872DP-T1-GE3 trades 3% higher Q_sw for broader V_GS(th) consistency and dual-sourcing flexibility in industrial VRMs.

Availability

IRLR8103VTRR is available at Aetrix Electronics and suitable for server VRMs, laptop CPU core supplies, GPU power delivery, and ASIC core rails requiring stable component supply, consistent parametric performance, and long-lifecycle availability.

Supply support for IRLR8103VTRR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices, with global R&D and manufacturing infrastructure.

The IRLR8103VTRR belongs to Infineon's HEXFET® Power MOSFET product line, engineered specifically for high-efficiency, high-frequency DC-DC conversion in computing and communications infrastructure.

FAQ

What is the maximum safe operating frequency for IRLR8103VTRR in a synchronous buck converter?

The IRLR8103VTRR supports switching frequencies up to 1.2 MHz in well-designed layouts, based on its 12 nC Q_sw, 27 nC Q_G, and low Crss (109 pF). At 800 kHz, measured turn-off delay (t_d(off)) is 24 ns and fall time (t_f) is 18 ns - enabling clean zero-voltage switching transitions when paired with appropriate gate drivers and PCB routing.

Does IRLR8103VTRR require a gate resistor for stability in high-speed applications?

Yes - a 2.2–4.7 Ω gate resistor is recommended between driver output and Gate (Pin 1) to dampen ringing caused by trace inductance and MOSFET input capacitance. This value balances switching speed (minimizing t_r/t_f) and gate oscillation suppression, especially critical when driving at >500 kHz with fast-edge controllers like ISL63xx or MP296x series.

Can IRLR8103VTRR be used as a high-side switch with bootstrap gate drive?

Yes - its 1.0–2.5 V V_GS(th) and 27 nC Q_G make it fully compatible with standard bootstrap gate drivers (e.g., IR2110, LM5113) operating from 10–15 V floating supplies. Bootstrap capacitor sizing must ensure ≥5 V gate drive during minimum duty cycle; typical 0.1 µF ceramic + 10 µF tantalum satisfies this for 100–600 kHz operation.

How does the body diode performance compare to discrete Schottky alternatives?

The integrated body diode has V_SD = 0.9–1.3 V and Q_rr = 103 nC, which is superior to most 30 V Schottky diodes in reverse recovery softness and thermal coupling. While discrete Schottkys offer lower forward drop (~0.4 V), their Q_rr is undefined and they introduce additional parasitic inductance - making the monolithic body diode preferable for compact, high-reliability synchronous rectification.

IRLR8103VTRR Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 91A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 9mOhm @ 15A, 10V

Vgs(th) (Max) @ Id:: 3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 27 nC @ 5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2672 pF @ 16 V

FET Feature:: -

Power Dissipation (Max):: 115W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-252AA (DPAK)

IRLR8103VTRR FAQ

1.How can I place an order for IRLR8103VTRR through Aetrix?

Please submit a Request for Quotation (RFQ) for IRLR8103VTRR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRLR8103VTRR reliable?

The price and inventory of IRLR8103VTRR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRLR8103VTRR is usually 5 days.

3.What payment methods are accepted for IRLR8103VTRR?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRLR8103VTRR transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRLR8103VTRR?

IRLR8103VTRR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRLR8103VTRR order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRLR8103VTRR?

For technical support, including IRLR8103VTRR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRLR8103VTRR requirements.

6.How does Aetrix verify that IRLR8103VTRR is sourced from the original manufacturer or authorized distributors?

All IRLR8103VTRR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRLR8103VTRR meets industry standards.

7.What is the process for return or replacement of IRLR8103VTRR?

All IRLR8103VTRR units undergo pre-shipment inspection (PSI). If there is an issue with IRLR8103VTRR, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRLR8103VTRR part is unused and in its original packaging.

Return procedure for IRLR8103VTRR:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-07-29 18650 Battery: Voltage, Capacity, Charging and Pack Design

18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…

2026-07-27 Hall Effect Sensor: Working Principle, Types, Circuits and Applications

Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…

2026-07-20 Product Change Notification (PCN) in Electronic Components: Meaning and Supply Chain Response

Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…

2026-07-19 Blend Door Actuator: Symptoms, Location, Reset and Replacement Guide

A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…

2026-07-17 Raspberry Pi Alternatives: Chip-Level Comparison, Compatibility and Replacement Guide

Engineering guide to Raspberry Pi alternatives, covering chip-level differences, Orange Pi, ROCK, Jetson, Banana Pi, NanoPi, Compute Module, Pico, GPIO, camera, HAT compatibility, and replacement risks…

2026-07-13 How to Test Dynamic Load Response in Low-Voltage High-Current Buck Converters

Engineering guide to dynamic load response testing for high-current buck converters, covering load step setup, slew rate, Vcore undershoot, overshoot, recovery time, probe location, output capacitors a…

2026-07-08 Output Capacitor Selection for High-Current ASIC Vcore Rails

Engineering guide to output capacitor selection for ASIC Vcore rails, covering bulk capacitors, polymer capacitors, MLCC decoupling, DC bias, ESR, ESL, placement, transient response and substitution ri…

2026-07-07 High-Current ASIC Core Power Supply Design: 12-Phase Buck, PMBus and Dynamic Load Response

Engineering guide to high-current ASIC Vcore rails, covering 12-phase buck architecture, PMBus control, dynamic load testing, output capacitor networks, smart power stage selection, thermal design and …

2026-07-06 Voltage Regulator: Types, Circuits, Testing and Selection Guide

Voltage regulator guide covering linear, LDO, 7805, Zener, adjustable, buck, VRM and alternator regulators, with design checks, testing methods, troubleshooting and datasheet-based selection.

2026-06-30 Amplifiers Explained: Types, Circuits, Gain, Classes and Applications

Amplifier guide covering voltage, current and power amplification, gain, feedback, amplifier classes, audio and RF applications, op-amp circuits, transimpedance amplifiers, datasheet selection and trou…