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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRLR8103VTRRPBF

Name: IRLR8103VTRRPBF
Brand: Infineon Technologies
SKU: IRLR8103VTRRPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRLR8103VTRRPBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: IRLR8103VTRRPBF.pdf

Description:: MOSFET N-CH 30V 91A DPAK

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Product details

Overview

IRLR8103VTRRPBF from Infineon Technologies (formerly International Rectifier) is an N-channel enhancement-mode power MOSFET in D-Pak (TO-252) package, rated for 30 V V_DS, 7.9 mΩ R_DS(on) at V_GS = 4.5 V, 27 nC total gate charge, and optimized for synchronous buck converters in CPU core DC-DC applications.

For engineers reviewing the IRLR8103VTRRPBF datasheet, IRLR8103VTRRPBF pinout, IRLR8103VTRRPBF application, or IRLR8103VTRRPBF equivalent, key selection criteria include low Q_SW/R_DS(on) trade-off, C_dv/dt-induced turn-on immunity, body diode recovery performance (Q_rr = 103 nC), and thermal resistance R_θJC = 1.09 °C/W for high-current PCB-mount power stages.

Technical Context

This MOSFET employs HEXFET technology with optimized charge distribution to minimize both conduction loss (via ultra-low R_DS(on)) and switching loss (via low Q_SW = 12 nC and Q_OSS = 29 nC). Its gate threshold voltage (V_GS(th) = 1.0–3.0 V) supports 4.5 V logic-level drive, enabling direct interface with PWM controllers in point-of-load regulators.

The device features a robust body diode with V_SD = 0.9–1.3 V at 15 A and reverse recovery charge Q_rr = 103 nC under clamped inductive load conditions (di/dt ≈ 700 A/µs), critical for minimizing shoot-through risk and dead-time optimization in synchronous rectification.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Maximum blocking voltage compatible with 24 V input rails and transient margin in CPU VRMs.
R_DS(on)	7.9 mΩ @ V_GS = 4.5 V - Enables ≤1.2 W conduction loss at 15 A, reducing thermal stress in compact layouts.
Q_G	27 nC - Determines gate driver current requirement (~2.7 A peak for 10 ns rise time); impacts control FET sizing.
Q_SW	12 nC - Governs switching energy loss per cycle; enables >1 MHz operation with low driver power overhead.
R_θJC	1.09 °C/W - Allows ≥60 W continuous power dissipation with 65 °C case temperature rise, supporting high-density PCB mounting.
Q_OSS	29 nC - Defines capacitive energy loss during hard-switching transitions; critical for ZVS-assisted topologies.
V_GS(th)	1.0–3.0 V - Ensures reliable turn-on with standard 3.3 V/5 V logic drivers without level-shifting.

Pinout & Package

D-Pak (TO-252) package with exposed drain pad for enhanced thermal conduction; compatible with vapor phase, IR, convection, and wave soldering. Mounting on 1-inch² copper board enables >2 W continuous power dissipation.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Source)	Source terminal (body diode cathode)	Reference node for gate drive; connects to low-side switch node or ground return path.
Pin 2 (Gate)	Control electrode	Receives PWM signal; requires low-inductance routing to minimize ringing and false turn-on.
Pin 3 (Drain)	Power output / high-side connection	Exposed metal tab - must be electrically connected to PCB drain net and thermally coupled to heatsink/copper pour.

Key Features

Feature	Design Value
Ultra-low Q_SW/R_DS(on) ratio	1.51 nC/mΩ - Reduces combined conduction + switching losses more effectively than standard MOSFETs in 300–1000 kHz VRMs.
C_dv/dt-induced turn-on immunity	Validated under V_DS = 24 V, dV/dt = 700 V/ns - Minimizes risk of parasitic turn-on in high-dV/dt synchronous buck nodes.
100% R_G tested	R_G = 0.8–3.1 Ω - Ensures consistent gate drive timing and predictable switching behavior across production lots.
Lead-free and RoHS-compliant	"P" suffix denotes Pb-free termination - Meets IPC-J-STD-020 moisture sensitivity level 1 (MSL-1) for standard SMT assembly.

Applications

CPU Core Voltage Regulator

GPU Power Delivery Module

Use Scenario: High-current, multi-phase buck converter supplying 0.8–1.5 V at up to 150 A to modern x86 or ARM processors.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier MOSFET in each phase leg, operating at 300–600 kHz with tight dead-time control.

Use Value: 7.9 mΩ R_DS(on) reduces conduction loss by ~35% vs. legacy 12 mΩ devices, lowering junction temperature rise by ≥12 °C at full load.

Use Scenario: Compact, single-layer PCB-mounted VRM for discrete graphics cards requiring fast transient response and <100 µs load-step recovery.

IC Role / Device Role / Timing Role: Control FET in high-side position, driven by integrated gate driver with adaptive dead-time adjustment.

Use Value: 27 nC Q_G enables clean 5 ns propagation delay matching between gate driver and MOSFET, minimizing shoot-through window.

Server Memory Channel Regulator

AI Accelerator Board Power Stage

Use Scenario: Distributed 1.2 V/1.8 V regulators feeding DDR4/DDR5 memory modules with strict ripple (<15 mV_pp) and EMI requirements.

IC Role / Device Role / Timing Role: Synchronous FET in interleaved two-phase topology, leveraging low Q_OSS (29 nC) to reduce capacitive switching loss.

Use Value: Q_OSS 29 nC cuts capacitive energy loss by 42% vs. comparable 50 nC devices, improving efficiency by 0.4% at 500 kHz.

Use Scenario: High-density power delivery network for FPGA-based AI inference accelerators with dynamic current demands up to 200 A.

IC Role / Device Role / Timing Role: Parallel-configured low-side switch in 4-phase VRM, relying on matched R_DS(on) and gate charge for current sharing.

Use Value: Tight R_DS(on) tolerance (6.9–9.0 mΩ) and 100% R_G test ensure ±3% current imbalance across paralleled units without external sensing.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRLR8721PbF	R_DS(on) = 5.8 mΩ @ 4.5 V, Q_G = 32 nC, V_DS = 30 V	Lower R_DS(on) but higher Q_G; better for low-frequency, high-current apps where conduction dominates	Prefer when thermal budget is constrained but switching frequency ≤300 kHz.
SI7850DP-T1-GE3	R_DS(on) = 8.5 mΩ @ 4.5 V, Q_G = 22 nC, R_θJC = 1.2 °C/W	Lower gate charge but slightly higher R_DS(on) and worse thermal resistance; optimized for space-constrained designs	Prefer when PCB area is limited and gate drive capability is marginal.

Compared with IRLR8103VTRRPBF, IRLR8721PbF trades higher switching loss for lower conduction loss, while SI7850DP-T1-GE3 offers faster switching at the cost of marginally higher steady-state loss and reduced thermal headroom-making IRLR8103VTRRPBF the balanced choice for 400–800 kHz CPU VRMs demanding both efficiency and reliability.

Availability

IRLR8103VTRRPBF is available at Aetrix Electronics and suitable for CPU core voltage regulation, GPU power delivery modules, server memory channel regulators, and AI accelerator board power stages requiring stable component supply and long-term industrial lifecycle support.

Supply support for IRLR8103VTRRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, automotive electronics, and industrial control ICs with over 30 years of MOSFET innovation.

The IRLR8103VTRRPBF belongs to Infineon's HEXFET® logic-level power MOSFET product line, engineered specifically for high-efficiency, high-frequency DC-DC conversion in computing and data center power systems.

FAQ

What is the maximum continuous drain current at T_C = 90°C?

The IRLR8103VTRRPBF supports 363 A continuous drain current at case temperature of 90°C, based on its 115 W power dissipation rating and R_θJC = 1.09 °C/W thermal resistance. This rating assumes proper PCB copper area and thermal vias to maintain case temperature at or below 90°C under sustained load.

Does this MOSFET require a gate resistor for stability?

A gate resistor (typically 2.2–10 Ω) is recommended to dampen gate-source ringing caused by PCB trace inductance and MOSFET input capacitance (C_iss = 2672 pF). The device's R_G = 0.8–3.1 Ω internal gate resistance alone is insufficient to suppress oscillation in high-speed switching layouts.

Can IRLR8103VTRRPBF be used in avalanche-rated circuits?

No-IRLR8103VTRRPBF is not specified for repetitive avalanche operation. Its absolute maximum ratings do not include avalanche energy (E_AS) or unclamped inductive switching (UIS) limits. It must be operated within SOA boundaries shown in Figure 8, with external clamping or snubbing for inductive loads.

Is the body diode suitable for synchronous rectification without external Schottky assist?

Yes-the integrated body diode has Q_rr = 103 nC and V_SD = 0.9–1.3 V at 15 A, enabling use in synchronous rectification without parallel Schottky diodes in most 300–600 kHz buck converters. However, adding a 10BQ040 Schottky reduces Q_rr(s) to 96 nC and improves light-load efficiency.

IRLR8103VTRRPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 91A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 9mOhm @ 15A, 10V

Vgs(th) (Max) @ Id:: 3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 27 nC @ 5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2672 pF @ 16 V

FET Feature:: -

Power Dissipation (Max):: 115W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-252AA (DPAK)

IRLR8103VTRRPBF FAQ

1.How can I place an order for IRLR8103VTRRPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRLR8103VTRRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRLR8103VTRRPBF reliable?

The price and inventory of IRLR8103VTRRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRLR8103VTRRPBF is usually 5 days.

3.What payment methods are accepted for IRLR8103VTRRPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRLR8103VTRRPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRLR8103VTRRPBF?

IRLR8103VTRRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRLR8103VTRRPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRLR8103VTRRPBF?

For technical support, including IRLR8103VTRRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRLR8103VTRRPBF requirements.

6.How does Aetrix verify that IRLR8103VTRRPBF is sourced from the original manufacturer or authorized distributors?

All IRLR8103VTRRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRLR8103VTRRPBF meets industry standards.

7.What is the process for return or replacement of IRLR8103VTRRPBF?

All IRLR8103VTRRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRLR8103VTRRPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRLR8103VTRRPBF part is unused and in its original packaging.

Return procedure for IRLR8103VTRRPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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