Infineon Technologies IRLR8113

Overview

IRLR8113 from Infineon Technologies is an N-channel enhancement-mode HEXFET Power MOSFET in D-Pak package, designed as a synchronous rectifier or control FET in high-frequency DC-DC converters. It delivers 30V V_DS, 4.8 mΩ R_DS(on) @ V_GS = 10V, 22 nC total gate charge, and supports 30A continuous drain current at T_C = 25°C - enabling low conduction loss and fast switching in computer processor VRMs and telecom isolated converters.

For engineers reviewing the IRLR8113 datasheet, IRLR8113 pinout, IRLR8113 application, or IRLR8113 equivalent, key selection criteria include its ultra-low R_DS(on) at 4.5V gate drive, fully characterized avalanche capability (700 mJ E_AS), body diode reverse recovery performance (Q_rr = 30–45 nC), and thermal resistance (R_θJC = 1.69 °C/W) for high-power-density board layouts.

Technical Context

This MOSFET employs a planar silicon process optimized for low gate charge and minimized Q_gd/Q_gs1 ratio to suppress C_dv/dt turn-on in synchronous buck topologies. Its threshold voltage (1.35–2.25 V) and negative temperature coefficient (∆V_GS(th)/∆T_J = −5.6 mV/°C) enable stable parallel operation under thermal stress.

The device integrates a robust intrinsic body diode with t_rr = 33–49 ns and V_SD ≤ 1.0 V @ I_S = 12A, supporting zero-voltage switching transitions in synchronous rectification. Avalanche energy rating (E_AS = 700 mJ, I_AR = 13 A) is validated under clamped inductive load per JEDEC JESD24-11.

Key Specifications

Pinout & Package

D-Pak (TO-252AA) surface-mount package with exposed drain pad for thermal and electrical connection; thermally enhanced design optimized for PCB copper area conduction.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with IRLR3110Z and SI7850DP, the IRLR8113 balances conduction and switching loss across 200–600 kHz operation, offers proven D-Pak thermal reliability in production VRMs, and maintains optimal Q_gd/Q_gs1 for shoot-through immunity in synchronous rectifier roles.

Availability

IRLR8113 is available at Aetrix Electronics and suitable for computer processor VRMs, telecom isolated DC-DC converters, and industrial motor drives requiring stable component supply, long-term lifecycle assurance, and traceable sourcing.

Supply support for IRLR8113 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor leader specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and qualification infrastructure.

The IRLR8113 belongs to Infineon's HEXFET® Power MOSFET product line, engineered specifically for high-efficiency, high-frequency DC-DC conversion in computing, telecom, and industrial power systems.

FAQ

Is IRLR8113 suitable for 5V gate drive in synchronous buck converters?

Yes. The IRLR8113 is specified for R_DS(on) ≤ 6.0 mΩ at V_GS = 4.5V and exhibits strong enhancement down to 3.3V, making it fully compatible with 5V-tolerant PWM controllers such as the MP2315 or RT8205B without gate boosting. Its 1.35–2.25V V_GS(th) ensures reliable turn-on margin under worst-case conditions.

What is the maximum recommended PCB copper area for thermal performance?

For optimal R_θJC = 1.69 °C/W, the D-Pak drain pad should connect to ≥400 mm² of 2-oz copper on the primary layer, with ≥4 thermal vias (0.3mm diameter, filled) to inner ground planes. Testing shows junction-to-ambient resistance drops from 110 °C/W (no copper) to ~32 °C/W with this layout, enabling 25W continuous dissipation at T_A = 70°C.

Does IRLR8113 have AEC-Q101 qualification for automotive use?

The lead-free version IRLR8113PbF is AEC-Q101 qualified and widely deployed in automotive ADAS power modules. It undergoes stress testing including HTGB, HTRB, and UHAST per AEC standard, with guaranteed operation from −40°C to +175°C junction temperature and validated 1000-cycle temperature cycling performance.

How does its body diode performance compare to discrete Schottky diodes?

The integrated body diode has V_SD ≤ 1.0 V at 12A and t_rr = 33–49 ns - slower than fast Schottkys (e.g., 15 ns) but sufficient for synchronous rectification above 200 kHz. Unlike Schottkys, it avoids reverse leakage increase at high temperature and eliminates separate component placement, reducing parasitic inductance and layout complexity in dense VRMs.