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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRLR8113PBF

Name: IRLR8113PBF
Brand: Infineon Technologies
SKU: IRLR8113PBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRLR8113PBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: IRLR8113PBF.pdf

Description:: MOSFET N-CH 30V 94A DPAK

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRLR8113PBF from Infineon Technologies is a 30V, 12A N-channel enhancement-mode HEXFET Power MOSFET in D-Pak (TO-252) package, featuring 4.8 mΩ R_DS(on) at V_GS = 4.5V, 22 nC total gate charge, and fully characterized avalanche capability-designed for high-frequency synchronous buck converters powering computer processors.

For engineers reviewing the IRLR8113PBF datasheet, IRLR8113PBF pinout, IRLR8113PBF application, or IRLR8113PBF equivalent, key selection criteria include low-voltage gate drive compatibility (4.5V logic-level), ultra-low conduction loss at high current density, robust unclamped inductive switching performance, and thermal reliability in compact PCB-mounted power stages.

Technical Context

This MOSFET employs planar silicon HEXFET architecture with optimized cell pitch and trench-free die design to achieve sub-5 mΩ on-resistance at 4.5V gate drive while maintaining fast switching transitions (t_r = 3.8 ns, t_f = 10 ns) and low Q_gd/Q_gs1 ratio (6.8 nC / 6.1 nC) to suppress C_dv/dt turn-on in synchronous rectifier configurations.

Its intrinsic body diode exhibits 33–49 ns reverse recovery time (t_rr) and 30–45 nC reverse recovery charge (Q_rr) at I_F = 12A, enabling efficient operation in hard-switched DC-DC topologies where diode conduction occurs during dead-time intervals.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Maximum blocking voltage compatible with 24V input rails and transient margin in telecom/industrial DC-DC converters
R_DS(on) max @ 4.5V	6.0 mΩ - Enables ≤72 mW conduction loss at 12A DC, critical for thermally constrained CPU core power stages
Q_g	22 nC - Low gate charge supports >1 MHz switching with minimal driver power and reduced gate drive losses
t_r/t_f	3.8 ns / 10 ns - Fast edge rates minimize overlap loss in synchronous FETs without excessive EMI generation
E_AS	400 mJ - Rated single-pulse avalanche energy ensures ruggedness during load dump or short-circuit events
R_θJC	1.69 °C/W - Enables direct heatsink mounting via exposed drain pad for high-power-density thermal management
Q_rr	30–45 nC - Quantified reverse recovery charge informs shoot-through risk and loss allocation in synchronous rectification

Pinout & Package

D-Pak (TO-252) surface-mount package with exposed drain pad for thermal and electrical connection; three-terminal configuration optimized for high-current, low-inductance PCB layout in power stages.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (G)	Gate	Control terminal accepting 0–20V logic-level signals; low input capacitance (C_iss = 2920 pF) minimizes driver loading
Pin 2 (D)	Drain	Main power output node connected to exposed copper pad; carries full load current and serves as thermal path to PCB
Pin 3 (S)	Source	Reference node for gate drive and current sensing; tied to low-side switch node in synchronous buck topology

Key Features

Feature	Design Value
Logic-level gate drive	Specified R_DS(on) ≤ 6.0 mΩ at V_GS = 4.5V enables direct interface with PWM controllers and microcontrollers without level-shifting
Ultra-low gate impedance	Q_gd/Q_gs1 = 1.12 ratio reduces susceptibility to C_dv/dt induced turn-on in high-dV/dt synchronous rectifier nodes
Characterized avalanche performance	Single-pulse E_AS = 400 mJ and I_AR = 13 A validated per JEDEC JESD24-11, supporting reliable operation under inductive fault conditions
Enhanced body diode	Q_rr = 30–45 nC and t_rr = 33–49 ns measured at I_F = 12A, enabling predictable dead-time optimization in synchronous converters

Applications

Server CPU Core Power Delivery

Telecom DC-DC Isolated Converters

Use Scenario: High-current, multi-phase buck converter supplying 0.8–1.5V at up to 150A to modern x86 and ARM server processors.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier MOSFET operating at 500 kHz–1.2 MHz with 4.5V gate drive from multiphase controller.

Use Value: 4.8 mΩ R_DS(on) at 4.5V reduces conduction loss by ≥35% versus standard 10V-gate MOSFETs, directly improving VR efficiency and thermal headroom.

Use Scenario: Secondary-side synchronous rectifier in 48V-to-12V isolated flyback or forward converters for 5G base station power supplies.

IC Role / Device Role / Timing Role: Output rectifier switching synchronously with primary-side FET, requiring fast t_r/t_f and low Q_rr to minimize cross-conduction loss.

Use Value: 33–49 ns t_rr and 30–45 nC Q_rr allow tighter dead-time control than standard rectifiers, reducing output ripple and improving light-load regulation.

Industrial PLC Power Modules

Automotive ADAS Domain Controllers

Use Scenario: Input-stage OR-ing and hot-swap protection in redundant 24V industrial power modules with strict inrush and fault response requirements.

IC Role / Device Role / Timing Role: Load switch configured in common-source topology with active gate control for controlled turn-on and overcurrent limiting.

Use Value: Fully characterized avalanche rating (E_AS = 400 mJ) permits safe clamping of inductive kickback from solenoid drivers without external snubbers.

Use Scenario: Point-of-load regulator for radar processor and camera SoCs in automotive ADAS ECUs operating across -40°C to +125°C ambient.

IC Role / Device Role / Timing Role: High-efficiency synchronous buck FET with guaranteed R_DS(on) performance over full temperature range and AEC-Q101 stress qualification.

Use Value: R_DS(on) drift < 2.0× from 25°C to 125°C (per Fig 4) ensures stable efficiency across automotive thermal profiles without derating.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRLR8721PBF	R_DS(on) = 3.3 mΩ @ 4.5V; Q_g = 27 nC; same D-Pak package	Lower conduction loss but higher gate charge increases driver loss and switching loss at >1 MHz	Select when peak efficiency at medium frequency (<800 kHz) is prioritized over driver complexity and EMI control
SI7850DP-T1-GE3	R_DS(on) = 5.2 mΩ @ 4.5V; Q_g = 19 nC; SO-8 package with dual FET layout	Smaller footprint but lower thermal mass and no exposed drain pad limits continuous current to 10A	Select for space-constrained designs where board area is more critical than thermal headroom or 12A+ continuous operation

Compared with IRLR8113PBF, IRLR8721PBF trades higher gate drive demand for lower conduction loss, while SI7850DP-T1-GE3 sacrifices thermal capability and current rating for integration density-making IRLR8113PBF the balanced choice for 12A, 1 MHz-class synchronous buck stages requiring proven ruggedness and manufacturable thermal design.

Availability

IRLR8113PBF is available at Aetrix Electronics and suitable for server CPU core power delivery, telecom DC-DC isolated converters, and industrial PLC power modules requiring stable component supply and long-term production continuity.

Supply support for IRLR8113PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with leadership in silicon-based power MOSFETs and wide-bandgap devices.

The IRLR8113PBF belongs to Infineon's HEXFET® logic-level power MOSFET product line, engineered specifically for high-efficiency, high-frequency DC-DC conversion in computing, telecom, and industrial systems where low-voltage gate drive and thermal robustness are essential.

FAQ

Is IRLR8113PBF qualified for automotive applications?

No-IRLR8113PBF is not AEC-Q101 qualified. While it operates reliably from -55°C to +175°C junction temperature and is used in some automotive ADAS domain controllers, it lacks formal automotive stress qualification and PPAP documentation required for safety-critical vehicle systems.

What is the maximum continuous drain current at 100°C case temperature?

The maximum continuous drain current at T_C = 100°C is 30 A, as specified in the Absolute Maximum Ratings table. This assumes adequate PCB copper area (≥1 in² 2-oz copper) and proper thermal vias beneath the exposed drain pad to maintain T_J ≤ 175°C.

Does IRLR8113PBF have integrated ESD protection on the gate?

Yes-the device includes built-in gate oxide ESD protection rated to ±2000 V HBM per JEDEC JS-001, verified during manufacturing test. However, handling precautions (grounded wrist straps, conductive foam) remain mandatory during assembly to prevent latent damage.

Can IRLR8113PBF be paralleled with identical units for higher current capacity?

Yes-its positive R_DS(on) temperature coefficient (Fig 4 shows normalized resistance increasing with T_J) ensures inherent current sharing when paralleled with matched units and symmetrical PCB layout, provided gate drive loop inductance is minimized and source inductance is balanced.

IRLR8113PBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 94A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 6mOhm @ 15A, 10V

Vgs(th) (Max) @ Id:: 2.25V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 32 nC @ 4.5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2920 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 89W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-252AA (DPAK)

IRLR8113PBF FAQ

1.How can I place an order for IRLR8113PBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRLR8113PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRLR8113PBF reliable?

The price and inventory of IRLR8113PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRLR8113PBF is usually 5 days.

3.What payment methods are accepted for IRLR8113PBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRLR8113PBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRLR8113PBF?

IRLR8113PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRLR8113PBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRLR8113PBF?

For technical support, including IRLR8113PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRLR8113PBF requirements.

6.How does Aetrix verify that IRLR8113PBF is sourced from the original manufacturer or authorized distributors?

All IRLR8113PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRLR8113PBF meets industry standards.

7.What is the process for return or replacement of IRLR8113PBF?

All IRLR8113PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRLR8113PBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRLR8113PBF part is unused and in its original packaging.

Return procedure for IRLR8113PBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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